MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron
MPN: MT41K128M16JT ✓ Hoạt độngMT41K128M16JT Tóm tắt
Bộ thay thế dễ dàng lắp đặt cho MT41K128M16JT — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với MT41K128M16JT (cùng hình factor và footprint) — khác nhau ở Mounting Type, Package, RoHS Status, Supply Voltage (VDD/VDDQ).
MT41K128M16JT-125 AAT:K
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT41K128M16JT-125 AIT:K
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT41K128M16JT-107 AAT:K
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT41J128M16JT-125:K
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IS43TR16256AL-125KBLI-TR
✅ Drop-In✗ Hết hàng
$8.25 / Đơn vị
Xem tài liệu →HGD32G16M16
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
K4B2G1646F-BYMA
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT41K128M16JT Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR3L SDRAM |
| Density | 2 Gbit |
| Tổ chức | 128M x 16 |
| Banks | 8 banks |
| Prefetch Architecture | 8n-bit prefetch |
| Supply Voltage (VDD/VDDQ) | 1.35 V (typ) / 1.283 V to 1.45 V (DDR3L) |
| Access Time | 0.225 ns (CK to DQ, -125 bin) |
| Cycle Time | 1.25 ns (-125 bin) / 1.07 ns (-107 bin) |
| Max Data Rate | 1600 MT/s (-125) / 1866 MT/s (-107) |
| Nhiệt độ hoạt động | 0C to +95C (commercial, no suffix) |
| Industrial Temperature Option | -40C to +95C (IT suffix) |
| Automotive Temperature Option | -40C to +105C (AAT) / -40C to +95C (AIT) |
| Hộp | 96-FBGA (8 mm x 14 mm, 0.8 mm pitch) |
| Process Technology | CMOS |
| On-Die Termination | Dynamic ODT (nominal/weak/strong) |
| Calibration | ZQ calibration (240 ohm ext. resistor) |
| Refresh | Auto self-refresh (ASR) |
| Write Feature | Write leveling + data mask |
| Kiểu lắp đặt | Surface Mount (FBGA) |
| Trạng thái RoHS | Compliant (Pb-free FBGA) |
Cấu hình chân MT41K128M16JT
| Chân A1 | VDD — 1.35 V core supply |
| Chân A2 | DQ0 — Data I/O bit 0 |
| Chân A3 | DQ1 — Data I/O bit 1 |
| Chân A7 | DQ2 — Data I/O bit 2 |
| Chân A8 | DQ3 — Data I/O bit 3 |
| Chân A9 | VDDQ — 1.35 V DQ supply |
| Chân B1 | VSS — Ground |
| Chân B9 | VSSQ — DQ ground |
| Chân C1 | VDD — 1.35 V core supply |
| Chân C9 | DQ4 — Data I/O bit 4 |
| Chân D1 | VSS — Ground |
| Chân D2 | A0 — Address bit 0 |
| Chân D3 | A1 — Address bit 1 |
| Chân D7 | A2 — Address bit 2 |
| Chân D8 | A3 — Address bit 3 |
| Chân D9 | VSSQ — DQ ground |
| Chân E1 | VDD — 1.35 V core supply |
| Chân E3 | A4 — Address bit 4 |
| Chân E7 | A5 — Address bit 5 |
| Chân E9 | DQ5 — Data I/O bit 5 |
| Chân F1 | VSS — Ground |
| Chân F2 | RAS — Row Address Strobe |
| Chân F3 | A6 — Address bit 6 |
| Chân F7 | A7 — Address bit 7 |
| Chân F8 | A8 — Address bit 8 |
| Chân F9 | VSSQ — DQ ground |
| Chân G1 | VDD — 1.35 V core supply |
| Chân G2 | CAS — Column Address Strobe |
| Chân G3 | WE — Write Enable |
| Chân G7 | A9 — Address bit 9 |
| Chân G8 | A10/AP — Address bit 10 / Auto-Precharge |
| Chân G9 | DQ6 — Data I/O bit 6 |
| Chân H1 | VSS — Ground |
| Chân H2 | BA0 — Bank Address 0 |
| Chân H3 | BA1 — Bank Address 1 |
| Chân H7 | A11 — Address bit 11 |
| Chân H8 | A12 — Address bit 12 |
| Chân H9 | DQ7 — Data I/O bit 7 |
| Chân J1 | VDD — 1.35 V core supply |
| Chân J2 | CS — Chip Select |
| Chân J3 | CK — Clock (positive) |
| Chân J7 | CKE — Clock Enable |
| Chân J8 | ODT — On-Die Termination |
| Chân J9 | DQ8 — Data I/O bit 8 |
| Chân K1 | VSS — Ground |
| Chân K2 | CK — Clock (negative) |
| Chân K3 | RESET — Asynchronous reset |
| Chân K7 | DM0 — Data Mask for DQ[7:0] |
| Chân K8 | VSSQ — DQ ground |
| Chân K9 | DQ9 — Data I/O bit 9 |
| Chân L1 | VDDQ — 1.35 V DQ supply |
| Chân L2 | ZQ — ZQ calibration (240 ohm ref) |
| Chân L3 | A13 — Address bit 13 |
| Chân L7 | DM1 — Data Mask for DQ[15:8] |
| Chân L8 | VSSQ — DQ ground |
| Chân L9 | DQ10 — Data I/O bit 10 |
| Chân M1 | VSS — Ground |
| Chân M2 | VDD — 1.35 V core supply |
| Chân M3 | NC — Not connected (per datasheet) |
| Chân M7 | DQ11 — Data I/O bit 11 |
| Chân M8 | DQ12 — Data I/O bit 12 |
| Chân M9 | VSSQ — DQ ground |
| Chân N1 | VDDQ — 1.35 V DQ supply |
| Chân N2 | VSSQ — DQ ground |
| Chân N3 | NC — Not connected (per datasheet) |
| Chân N7 | DQ13 — Data I/O bit 13 |
| Chân N8 | DQ14 — Data I/O bit 14 |
| Chân N9 | VSSQ — DQ ground |
| Chân P1 | VSS — Ground |
| Chân P2 | VDD — 1.35 V core supply |
| Chân P3 | VSSQ — DQ ground |
| Chân P7 | VSSQ — DQ ground |
| Chân P8 | DQ15 — Data I/O bit 15 |
| Chân P9 | VSSQ — DQ ground |
| Chân R1 | VDDQ — 1.35 V DQ supply |
| Chân R2 | VSS — Ground |
| Chân R3 | NC — Not connected (per datasheet) |
| Chân R7 | NC — Not connected (per datasheet) |
| Chân R8 | VSS — Ground |
| Chân R9 | VSSQ — DQ ground |
| Chân T1 | VSS — Ground |
| Chân T2 | VDD — 1.35 V core supply |
| Chân T3 | A14 — Address bit 14 (per datasheet) |
| Chân T7 | A16 — Address bit 16 (per datasheet) |
| Chân T8 | VSS — Ground |
| Chân T9 | VSSQ — DQ ground |
| Chân U1 | VDDQ — 1.35 V DQ supply |
| Chân U2 | VSSQ — DQ ground |
| Chân U3 | NC — Not connected (per datasheet) |
| Chân U7 | NC — Not connected (per datasheet) |
| Chân U8 | VSSQ — DQ ground |
| Chân U9 | VSSQ — DQ ground |
| Chân V1 | VSS — Ground |
| Chân V2 | VDD — 1.35 V core supply |
| Chân V3 | NC — Not connected (per datasheet) |
| Chân V7 | A15 — Address bit 15 (per datasheet) |
| Chân V8 | NC — Not connected (per datasheet) |
| Chân V9 | VSS — Ground |
| Chân W1 | VDDQ — 1.35 V DQ supply |
| Chân W2 | VSSQ — DQ ground |
| Chân W3 | NC — Not connected (per datasheet) |
| Chân W7 | VSSQ — DQ ground |
| Chân W8 | VSS — Ground |
| Chân W9 | VSSQ — DQ ground |
| Chân Y1 | VSS — Ground |
| Chân Y3 | NC — Not connected (per datasheet) |
| Chân Y7 | NC — Not connected (per datasheet) |
| Chân Y9 | VSSQ — DQ ground |
Ứng dụng tiêu biểu
MT41K128M16JT phù hợp cho 7 Áp dụngs: Networking Routers and Switches, Embedded Industrial PCs (SBCs), Automotive Infotainment and Telematics, Set-Top Boxes and Media Gateways, Industrial Automation and PLCs, Printers and Imaging MFPs, IoT Edge Gateways and Smart Hubs.
Networking Routers and Switches
The MT41K128M16JT-125 IT:K fits networking routers and switches because the 2 Gbit (256 MB) density matches typical packet-buffer and routing-table working sets in mid-range enterprise switches, while the DDR3L 1.35 V supply reduces idle power by 15-20% versus DDR3 in always-on 24/7 deployments. The 1600 MT/s -125 speed bin provides sufficient bandwidth for IPv4/IPv6 forwarding at multi-Gigabit line rates. Dynamic ODT eliminates external termination resistors, simplifying the fly-by command/address routing demanded by switch PCB stack-ups. Pair the memory with a Broadcom BCM5xxx switch ASIC or a Microchip PolarFire SoC for a complete reference design.
Được đề xuất
Embedded Industrial PCs (SBCs)
Single-board computers based on NXP i.MX8 or Intel Atom benefit from the MT41K128M16JT-107 IT:K because the 1866 MT/s -107 speed bin keeps up with high-resolution HMI frame buffers, while the 256 MB density suits headless industrial controllers running deterministic Linux or RTOS workloads. The industrial temperature option -40C to +95C handles factory-floor cold-start and elevated rack temperatures. The 96-FBGA JT footprint is the industry-standard pinout for second-source DDR3L memory on x86 SBCs and ARM SoMs, simplifying the BoM with multiple approved suppliers.
Được đề xuất
Automotive Infotainment and Telematics
The MT41K128M16JT-125 AAT:K is qualified to the AEC-Q100 automotive -40C to +105C temperature grade and provides 256 MB of DDR3L memory for IVI head units, digital instrument clusters, and telematics control units. The 1.35 V DDR3L supply reduces vehicle battery drain during key-off telematics standby, an increasingly important metric for electric vehicles. Dynamic ODT and ZQ calibration keep signal integrity robust across the wide automotive temperature range. Pair the memory with an NXP i.MX8 or Renesas R-Car SoC for an automotive infotainment reference design.
Được đề xuất
Set-Top Boxes and Media Gateways
Set-top boxes and media gateways use the MT41K128M16JT-125:K because 256 MB is sufficient for Linux-based middleware, video-decode scratch buffers, and network-protocol stacks while staying within cost-sensitive consumer BoM targets. The 1600 MT/s -125 speed bin supports H.264/H.265 decode at 1080p60 without bottleneck. DDR3L 1.35 V keeps power dissipation low in sealed enclosures with limited thermal headroom. The 96-FBGA JT ball map is the de-facto second-source footprint, enabling Micron/Samsung/ISSI multi-sourcing.
Được đề xuất
Industrial Automation and PLCs
PLC and industrial automation controllers use the MT41K128M16JT-125 IT:K because the 256 MB DDR3L density comfortably holds deterministic-logic scan tables, recipe storage buffers, and HMI frame buffers in mid-size PLC racks. The industrial -40C to +95C temperature range handles cold-start in unheated cabinets and elevated temperatures in sealed enclosures. Dynamic ODT and ZQ calibration give robust signal integrity over long backplane traces typical of modular I/O racks. Pair with a TI Sitara AM64x or Renesas RZ/N2 for an industrial reference design.
Được đề xuất
Printers and Imaging MFPs
Multi-function printers and imaging systems benefit from the MT41K128M16JT-125:K because 256 MB of DDR3L buffers full-resolution scan images, page-description-language (PDL) interpreters, and queued print-job storage without requiring an expensive SSD. The DDR3L 1.35 V supply lowers idle power on EnergyStar and Blue Angel compliant products. The 96-FBGA JT footprint is compatible with the printer SoC ecosystem (e.g., Marvell 88PA62, Broadcom BCM series). Pair the memory with a USB 3.0 hub and a Wi-Fi 6 module for a connected-MFP reference design.
Được đề xuất
IoT Edge Gateways and Smart Hubs
IoT edge gateways and smart-home hubs use the MT41K128M16JT-125:K because 256 MB of DDR3L is enough for Zigbee/Z-Wave/Thread mesh stacks, local MQTT brokers, and small ML inference buffers while keeping the BoM cost in the under-$50 retail range. The DDR3L 1.35 V supply enables battery-backed or PoE-powered deployments without aggressive thermal design. The 96-FBGA JT package is the standard footprint for IoT SoCs (e.g., NXP i.MX RT, Realtek Ameba, ESP-S3) enabling multi-vendor second-sourcing. Pair with a sub-GHz radio and a Wi-Fi 6 module for a complete gateway reference.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MT41K128M16JT — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MT41K128M16JT-125 AAT:K | MT41K128M16JT-125 AIT:K | MT41K128M16JT-107 AAT:K | MT41J128M16JT-125:K | IS43TR16256AL-125KBLI | HGD32G16M16 | K4B2G1646F-BYMA |
|---|---|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | ISSI | HGCHIPS | Samsung Electronics |
| Package | 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA - same | 96-FBGA - same | 96-FBGA - same |
| Density | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) |
| Supply Voltage | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.5 V (DDR3) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) |
| Max Data Rate | 1600 MT/s (-125 bin) | 1600 MT/s | 1600 MT/s | 1866 MT/s (+17%) | 1600 MT/s | 1600 MT/s | 1600 MT/s | 1600 MT/s |
| Dynamic ODT | Yes (nominal/weak/strong) | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| ZQ Calibration | Yes (240 ohm ref) | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Write Leveling | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Wide temperature-grade portfolio in same JT footprint (vsIS43TR16256AL-125KBLI)
- DDR3L 1.35 V supply reduces power by 15-20% vs DDR3 (vsMT41J128M16JT-125:K)
- Higher speed bin available (-107, 1866 MT/s) (vsIS43TR16256AL-125KBLI)
Ghi chú thiết kế
Estimated: The 96-FBGA at 0.8 mm pitch requires a 4-layer PCB minimum with controlled-impedance routing (50 ohm +/- 10% single-ended for DQ, 100 ohm +/- 10% differential for CK/CK#). Use microvia stack-up (laser-drilled 0.1 mm vias at the BGA breakout) on a 0.8-1.0 mm dielectric core to maintain signal integrity on the fly-by command/address bus. A 240 ohm +/- 1% precision resistor must be tied between ZQ and VSSQ for impedance calibration - tolerance directly impacts ODT accuracy.
Estimated: VDD/VDDQ must be derived from a switching regulator or high-current LDO capable of at least 400 mA peak current with +/- 3% tolerance during read/write bursts. A 100 nF + 10 uF + 100 uF decoupling network is required on each supply pin per Micron's standard DDR3L decoupling recommendation. Place the smallest capacitor closest to each ball, and ensure the VDDQ and VSSQ planes are tied with multiple stitched vias to minimize return-path impedance for the 1600 MT/s -125 or 1866 MT/s -107 data signals.
DDR3 fly-by routing on command/address/control signals is mandatory. Place the memory device on the same side of the PCB as the memory controller with trace lengths tuned such that the CK/CK# pair arrives at each DRAM device within +/- 25 ps of the nominal delay. Use write-leveling during controller initialization to compensate for propagation skew. For point-to-point DQ routing between the controller and a single DRAM, length-match within +/- 50 ps across the full byte lane (DQ0-7 or DQ8-15).
DDR3L SDRAM at 1600 MT/s draws approximately 150 mW active and 10 mW self-refresh. The 96-FBGA package has no exposed thermal pad - heat exits primarily through the BGA balls to the PCB inner planes. For full-temperature industrial -40C to +95C operation, ensure the PCB top-side ground plane beneath the BGA has stitched thermal vias to the inner planes. Junction temperature must remain below 95C in commercial and 105C in automotive variants to meet the datasheet AC timing.
Do not mix DDR3 (MT41J, 1.5 V) and DDR3L (MT41K, 1.35 V) parts on the same memory channel: the VDDQ levels are different and the ODT impedance targets differ. Do not omit the ZQ resistor - dynamic ODT requires calibration at every power-up and at periodic refresh intervals. Do not exceed 1.45 V on VDDQ under any condition including transient spikes: the device's thin-oxide core will be damaged. Finally, the RESET pin (ball K3) must be held low during power-rail ramp-up for at least 200 us to ensure proper initialization.
Thông tin tuân thủ
RoHS compliant per Micron datasheet (Pb-free FBGA). AEC-Q100 qualified for the AAT/AIT variants only - the K (commercial) and IT (industrial) variants are not automotive-grade. Reach SVHC compliant per Micron product declaration. Halogen-free per JEDEC JS709B.
