MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron
料号： MT41K128M16JT ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $13.95 | $13.95 |
| 10 | $13.43 | $134.30 |
| 100 | $11.95 | $1,195.00 |
| 500 | $10.5 | $5,250.00 |
| 1,000 | $9.2 | $9,200.00 |
MT41K128M16JT 概述
直接替换替代料： MT41K128M16JT ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT41K128M16JT （相同外形与封装尺寸） ——差异在于 Mounting Type, Package, RoHS Status, Supply Voltage (VDD/VDDQ).
快速对比工具——选择替代料号进行并排对比：
MT41K128M16JT-125 AAT:K
✅ 直接替换📋 参考替代料（不在目录中）
MT41K128M16JT-125 AIT:K
✅ 直接替换📋 参考替代料（不在目录中）
MT41K128M16JT-107 AAT:K
✅ 直接替换📋 参考替代料（不在目录中）
MT41J128M16JT-125:K
✅ 直接替换📋 参考替代料（不在目录中）
IS43TR16256AL-125KBLI-TR
✅ 直接替换✓ 有现货
$8.25 / 个
查看数据手册 →HGD32G16M16
✅ 直接替换📋 参考替代料（不在目录中）
K4B2G1646F-BYMA
✅ 直接替换📋 参考替代料（不在目录中）
MT41K128M16JT 最大额定值与电气特性
| 存储器类型 | DDR3L SDRAM |
| Density | 2 Gbit |
| 存储组织 | 128M x 16 |
| Banks | 8 banks |
| Prefetch Architecture | 8n-bit prefetch |
| Supply Voltage (VDD/VDDQ) | 1.35 V (typ) / 1.283 V to 1.45 V (DDR3L) |
| Access Time | 0.225 ns (CK to DQ, -125 bin) |
| Cycle Time | 1.25 ns (-125 bin) / 1.07 ns (-107 bin) |
| Max Data Rate | 1600 MT/s (-125) / 1866 MT/s (-107) |
| 工作温度 | 0C to +95C (commercial, no suffix) |
| Industrial Temperature Option | -40C to +95C (IT suffix) |
| Automotive Temperature Option | -40C to +105C (AAT) / -40C to +95C (AIT) |
| 封装 | 96-FBGA (8 mm x 14 mm, 0.8 mm pitch) |
| Process Technology | CMOS |
| On-Die Termination | Dynamic ODT (nominal/weak/strong) |
| Calibration | ZQ calibration (240 ohm ext. resistor) |
| Refresh | Auto self-refresh (ASR) |
| Write Feature | Write leveling + data mask |
| 安装类型 | Surface Mount (FBGA) |
| RoHS 状态 | Compliant (Pb-free FBGA) |
MT41K128M16JT 引脚配置
| 引脚 A1 | VDD — 1.35 V core supply |
| 引脚 A2 | DQ0 — Data I/O bit 0 |
| 引脚 A3 | DQ1 — Data I/O bit 1 |
| 引脚 A7 | DQ2 — Data I/O bit 2 |
| 引脚 A8 | DQ3 — Data I/O bit 3 |
| 引脚 A9 | VDDQ — 1.35 V DQ supply |
| 引脚 B1 | VSS — Ground |
| 引脚 B9 | VSSQ — DQ ground |
| 引脚 C1 | VDD — 1.35 V core supply |
| 引脚 C9 | DQ4 — Data I/O bit 4 |
| 引脚 D1 | VSS — Ground |
| 引脚 D2 | A0 — Address bit 0 |
| 引脚 D3 | A1 — Address bit 1 |
| 引脚 D7 | A2 — Address bit 2 |
| 引脚 D8 | A3 — Address bit 3 |
| 引脚 D9 | VSSQ — DQ ground |
| 引脚 E1 | VDD — 1.35 V core supply |
| 引脚 E3 | A4 — Address bit 4 |
| 引脚 E7 | A5 — Address bit 5 |
| 引脚 E9 | DQ5 — Data I/O bit 5 |
| 引脚 F1 | VSS — Ground |
| 引脚 F2 | RAS — Row Address Strobe |
| 引脚 F3 | A6 — Address bit 6 |
| 引脚 F7 | A7 — Address bit 7 |
| 引脚 F8 | A8 — Address bit 8 |
| 引脚 F9 | VSSQ — DQ ground |
| 引脚 G1 | VDD — 1.35 V core supply |
| 引脚 G2 | CAS — Column Address Strobe |
| 引脚 G3 | WE — Write Enable |
| 引脚 G7 | A9 — Address bit 9 |
| 引脚 G8 | A10/AP — Address bit 10 / Auto-Precharge |
| 引脚 G9 | DQ6 — Data I/O bit 6 |
| 引脚 H1 | VSS — Ground |
| 引脚 H2 | BA0 — Bank Address 0 |
| 引脚 H3 | BA1 — Bank Address 1 |
| 引脚 H7 | A11 — Address bit 11 |
| 引脚 H8 | A12 — Address bit 12 |
| 引脚 H9 | DQ7 — Data I/O bit 7 |
| 引脚 J1 | VDD — 1.35 V core supply |
| 引脚 J2 | CS — Chip Select |
| 引脚 J3 | CK — Clock (positive) |
| 引脚 J7 | CKE — Clock Enable |
| 引脚 J8 | ODT — On-Die Termination |
| 引脚 J9 | DQ8 — Data I/O bit 8 |
| 引脚 K1 | VSS — Ground |
| 引脚 K2 | CK — Clock (negative) |
| 引脚 K3 | RESET — Asynchronous reset |
| 引脚 K7 | DM0 — Data Mask for DQ[7:0] |
| 引脚 K8 | VSSQ — DQ ground |
| 引脚 K9 | DQ9 — Data I/O bit 9 |
| 引脚 L1 | VDDQ — 1.35 V DQ supply |
| 引脚 L2 | ZQ — ZQ calibration (240 ohm ref) |
| 引脚 L3 | A13 — Address bit 13 |
| 引脚 L7 | DM1 — Data Mask for DQ[15:8] |
| 引脚 L8 | VSSQ — DQ ground |
| 引脚 L9 | DQ10 — Data I/O bit 10 |
| 引脚 M1 | VSS — Ground |
| 引脚 M2 | VDD — 1.35 V core supply |
| 引脚 M3 | NC — Not connected (per datasheet) |
| 引脚 M7 | DQ11 — Data I/O bit 11 |
| 引脚 M8 | DQ12 — Data I/O bit 12 |
| 引脚 M9 | VSSQ — DQ ground |
| 引脚 N1 | VDDQ — 1.35 V DQ supply |
| 引脚 N2 | VSSQ — DQ ground |
| 引脚 N3 | NC — Not connected (per datasheet) |
| 引脚 N7 | DQ13 — Data I/O bit 13 |
| 引脚 N8 | DQ14 — Data I/O bit 14 |
| 引脚 N9 | VSSQ — DQ ground |
| 引脚 P1 | VSS — Ground |
| 引脚 P2 | VDD — 1.35 V core supply |
| 引脚 P3 | VSSQ — DQ ground |
| 引脚 P7 | VSSQ — DQ ground |
| 引脚 P8 | DQ15 — Data I/O bit 15 |
| 引脚 P9 | VSSQ — DQ ground |
| 引脚 R1 | VDDQ — 1.35 V DQ supply |
| 引脚 R2 | VSS — Ground |
| 引脚 R3 | NC — Not connected (per datasheet) |
| 引脚 R7 | NC — Not connected (per datasheet) |
| 引脚 R8 | VSS — Ground |
| 引脚 R9 | VSSQ — DQ ground |
| 引脚 T1 | VSS — Ground |
| 引脚 T2 | VDD — 1.35 V core supply |
| 引脚 T3 | A14 — Address bit 14 (per datasheet) |
| 引脚 T7 | A16 — Address bit 16 (per datasheet) |
| 引脚 T8 | VSS — Ground |
| 引脚 T9 | VSSQ — DQ ground |
| 引脚 U1 | VDDQ — 1.35 V DQ supply |
| 引脚 U2 | VSSQ — DQ ground |
| 引脚 U3 | NC — Not connected (per datasheet) |
| 引脚 U7 | NC — Not connected (per datasheet) |
| 引脚 U8 | VSSQ — DQ ground |
| 引脚 U9 | VSSQ — DQ ground |
| 引脚 V1 | VSS — Ground |
| 引脚 V2 | VDD — 1.35 V core supply |
| 引脚 V3 | NC — Not connected (per datasheet) |
| 引脚 V7 | A15 — Address bit 15 (per datasheet) |
| 引脚 V8 | NC — Not connected (per datasheet) |
| 引脚 V9 | VSS — Ground |
| 引脚 W1 | VDDQ — 1.35 V DQ supply |
| 引脚 W2 | VSSQ — DQ ground |
| 引脚 W3 | NC — Not connected (per datasheet) |
| 引脚 W7 | VSSQ — DQ ground |
| 引脚 W8 | VSS — Ground |
| 引脚 W9 | VSSQ — DQ ground |
| 引脚 Y1 | VSS — Ground |
| 引脚 Y3 | NC — Not connected (per datasheet) |
| 引脚 Y7 | NC — Not connected (per datasheet) |
| 引脚 Y9 | VSSQ — DQ ground |
典型应用
MT41K128M16JT 适用于 7 应用s: Networking Routers and Switches, Embedded Industrial PCs (SBCs), Automotive Infotainment and Telematics, Set-Top Boxes and Media Gateways, Industrial Automation and PLCs, Printers and Imaging MFPs, IoT Edge Gateways and Smart Hubs.
Networking Routers and Switches
The MT41K128M16JT-125 IT:K fits networking routers and switches because the 2 Gbit (256 MB) density matches typical packet-buffer and routing-table working sets in mid-range enterprise switches, while the DDR3L 1.35 V supply reduces idle power by 15-20% versus DDR3 in always-on 24/7 deployments. The 1600 MT/s -125 speed bin provides sufficient bandwidth for IPv4/IPv6 forwarding at multi-Gigabit line rates. Dynamic ODT eliminates external termination resistors, simplifying the fly-by command/address routing demanded by switch PCB stack-ups. Pair the memory with a Broadcom BCM5xxx switch ASIC or a Microchip PolarFire SoC for a complete reference design.
推荐
Embedded Industrial PCs (SBCs)
Single-board computers based on NXP i.MX8 or Intel Atom benefit from the MT41K128M16JT-107 IT:K because the 1866 MT/s -107 speed bin keeps up with high-resolution HMI frame buffers, while the 256 MB density suits headless industrial controllers running deterministic Linux or RTOS workloads. The industrial temperature option -40C to +95C handles factory-floor cold-start and elevated rack temperatures. The 96-FBGA JT footprint is the industry-standard pinout for second-source DDR3L memory on x86 SBCs and ARM SoMs, simplifying the BoM with multiple approved suppliers.
推荐
Automotive Infotainment and Telematics
The MT41K128M16JT-125 AAT:K is qualified to the AEC-Q100 automotive -40C to +105C temperature grade and provides 256 MB of DDR3L memory for IVI head units, digital instrument clusters, and telematics control units. The 1.35 V DDR3L supply reduces vehicle battery drain during key-off telematics standby, an increasingly important metric for electric vehicles. Dynamic ODT and ZQ calibration keep signal integrity robust across the wide automotive temperature range. Pair the memory with an NXP i.MX8 or Renesas R-Car SoC for an automotive infotainment reference design.
推荐
Set-Top Boxes and Media Gateways
Set-top boxes and media gateways use the MT41K128M16JT-125:K because 256 MB is sufficient for Linux-based middleware, video-decode scratch buffers, and network-protocol stacks while staying within cost-sensitive consumer BoM targets. The 1600 MT/s -125 speed bin supports H.264/H.265 decode at 1080p60 without bottleneck. DDR3L 1.35 V keeps power dissipation low in sealed enclosures with limited thermal headroom. The 96-FBGA JT ball map is the de-facto second-source footprint, enabling Micron/Samsung/ISSI multi-sourcing.
推荐
Industrial Automation and PLCs
PLC and industrial automation controllers use the MT41K128M16JT-125 IT:K because the 256 MB DDR3L density comfortably holds deterministic-logic scan tables, recipe storage buffers, and HMI frame buffers in mid-size PLC racks. The industrial -40C to +95C temperature range handles cold-start in unheated cabinets and elevated temperatures in sealed enclosures. Dynamic ODT and ZQ calibration give robust signal integrity over long backplane traces typical of modular I/O racks. Pair with a TI Sitara AM64x or Renesas RZ/N2 for an industrial reference design.
推荐
Printers and Imaging MFPs
Multi-function printers and imaging systems benefit from the MT41K128M16JT-125:K because 256 MB of DDR3L buffers full-resolution scan images, page-description-language (PDL) interpreters, and queued print-job storage without requiring an expensive SSD. The DDR3L 1.35 V supply lowers idle power on EnergyStar and Blue Angel compliant products. The 96-FBGA JT footprint is compatible with the printer SoC ecosystem (e.g., Marvell 88PA62, Broadcom BCM series). Pair the memory with a USB 3.0 hub and a Wi-Fi 6 module for a connected-MFP reference design.
推荐
IoT Edge Gateways and Smart Hubs
IoT edge gateways and smart-home hubs use the MT41K128M16JT-125:K because 256 MB of DDR3L is enough for Zigbee/Z-Wave/Thread mesh stacks, local MQTT brokers, and small ML inference buffers while keeping the BoM cost in the under-$50 retail range. The DDR3L 1.35 V supply enables battery-backed or PoE-powered deployments without aggressive thermal design. The 96-FBGA JT package is the standard footprint for IoT SoCs (e.g., NXP i.MX RT, Realtek Ameba, ESP-S3) enabling multi-vendor second-sourcing. Pair with a sub-GHz radio and a Wi-Fi 6 module for a complete gateway reference.
推荐
推荐产品汇总
工程参考数据： MT41K128M16JT ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT41K128M16JT-125 AAT:K | MT41K128M16JT-125 AIT:K | MT41K128M16JT-107 AAT:K | MT41J128M16JT-125:K | IS43TR16256AL-125KBLI | HGD32G16M16 | K4B2G1646F-BYMA |
|---|---|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | ISSI | HGCHIPS | Samsung Electronics |
| Package | 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA - same | 96-FBGA - same | 96-FBGA - same |
| Density | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) |
| Supply Voltage | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.5 V (DDR3) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) |
| Max Data Rate | 1600 MT/s (-125 bin) | 1600 MT/s | 1600 MT/s | 1866 MT/s (+17%) | 1600 MT/s | 1600 MT/s | 1600 MT/s | 1600 MT/s |
| Dynamic ODT | Yes (nominal/weak/strong) | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| ZQ Calibration | Yes (240 ohm ref) | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Write Leveling | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
关键差异点
- Wide temperature-grade portfolio in same JT footprint （对比 IS43TR16256AL-125KBLI)
- DDR3L 1.35 V supply reduces power by 15-20% vs DDR3 （对比 MT41J128M16JT-125:K)
- Higher speed bin available (-107, 1866 MT/s) （对比 IS43TR16256AL-125KBLI)
设计说明
Estimated: The 96-FBGA at 0.8 mm pitch requires a 4-layer PCB minimum with controlled-impedance routing (50 ohm +/- 10% single-ended for DQ, 100 ohm +/- 10% differential for CK/CK#). Use microvia stack-up (laser-drilled 0.1 mm vias at the BGA breakout) on a 0.8-1.0 mm dielectric core to maintain signal integrity on the fly-by command/address bus. A 240 ohm +/- 1% precision resistor must be tied between ZQ and VSSQ for impedance calibration - tolerance directly impacts ODT accuracy.
Estimated: VDD/VDDQ must be derived from a switching regulator or high-current LDO capable of at least 400 mA peak current with +/- 3% tolerance during read/write bursts. A 100 nF + 10 uF + 100 uF decoupling network is required on each supply pin per Micron's standard DDR3L decoupling recommendation. Place the smallest capacitor closest to each ball, and ensure the VDDQ and VSSQ planes are tied with multiple stitched vias to minimize return-path impedance for the 1600 MT/s -125 or 1866 MT/s -107 data signals.
DDR3 fly-by routing on command/address/control signals is mandatory. Place the memory device on the same side of the PCB as the memory controller with trace lengths tuned such that the CK/CK# pair arrives at each DRAM device within +/- 25 ps of the nominal delay. Use write-leveling during controller initialization to compensate for propagation skew. For point-to-point DQ routing between the controller and a single DRAM, length-match within +/- 50 ps across the full byte lane (DQ0-7 or DQ8-15).
DDR3L SDRAM at 1600 MT/s draws approximately 150 mW active and 10 mW self-refresh. The 96-FBGA package has no exposed thermal pad - heat exits primarily through the BGA balls to the PCB inner planes. For full-temperature industrial -40C to +95C operation, ensure the PCB top-side ground plane beneath the BGA has stitched thermal vias to the inner planes. Junction temperature must remain below 95C in commercial and 105C in automotive variants to meet the datasheet AC timing.
Do not mix DDR3 (MT41J, 1.5 V) and DDR3L (MT41K, 1.35 V) parts on the same memory channel: the VDDQ levels are different and the ODT impedance targets differ. Do not omit the ZQ resistor - dynamic ODT requires calibration at every power-up and at periodic refresh intervals. Do not exceed 1.45 V on VDDQ under any condition including transient spikes: the device's thin-oxide core will be damaged. Finally, the RESET pin (ball K3) must be held low during power-rail ramp-up for at least 200 us to ensure proper initialization.
合规信息
RoHS compliant per Micron datasheet (Pb-free FBGA). AEC-Q100 qualified for the AAT/AIT variants only - the K (commercial) and IT (industrial) variants are not automotive-grade. Reach SVHC compliant per Micron product declaration. Halogen-free per JEDEC JS709B.
