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H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix
H5AN4G8NBJR-VKIR

H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

The SK hynix H5AN4G8NBJR-VKIR is a 4Gb CMOS DDR4 Synchronous DRAM (SDRAM) organized as 512M x 8, operating at data rates up to 2666 Mbps per pin from a nominal 1.2V supply, housed in a 78-ball FBGA (Fine-Pitch Ball Grid Array) surface-mount package. The -VKI speed grade with the R suffix denotes tape-and-reel packing for automated assembly. A DDR4 SDRAM is a type of synchronous dynamic random-access memory that transfers data on both the rising and falling edges of the clock (Double Data Rate). Within the memory hierarchy, DDR4 sits under the DRAM family, which sits under semiconductor memory, and serves as the high-bandwidth main-memory layer between the processor cache and non-volatile storage such as NAND flash. DDR4 introduced lower operating voltage (1.2V versus 1.5V for DDR3), bank groups, and higher data rates. Key features of the H5AN4G8NBJR-VKIR include 4Gb (gigabit) density in a single die, a wide x8 bus organization suited to 72-bit and 64-bit wide memory subsystems, 2666 Mbps operation for high-bandwidth main memory, and an industrial operating temperature range in which case temperature must be maintained between -40 and +85 degrees C, with extended operation permitted up to 95 degrees C case per the manufacturer datasheet. Architecturally, this part is a member of SK hynix's 4Gb DDR4 NBJR family (H5AN4G4/6/8NBJR series), a CMOS DRAM generation ideally suited for main memory applications requiring large density and high bandwidth. Internal bank-group parallelism enables efficient column access scheduling at DDR4-2666 speeds. Typical applications include server and networking main memory when populated into RDIMM or soldered-down embedded designs, industrial controllers and factory automation requiring -40 to +85 degrees C qualified DRAM, and embedded/telecom platforms needing stable long-life DDR4 sourcing. Design consideration: DDR4 routing requires length-matched address/command and DQ/DQS fly-by topology, 40-ohm on-die termination settings, and VPP (2.5V) and VDDQ (1.2V) rails with adequate decoupling; verify ZQ calibration resistor placement per the datasheet layout guidelines. This page synthesizes verified distributor stock data, drop-in same-family alternatives, and practical sourcing guidance not found in the manufacturer datasheet alone.

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H5AN8G4NAFR-UHC - 8Gb DDR4 SDRAM 1.2V | SK Hynix
H5AN8G4NAFR-UHC

H5AN8G4NAFR-UHC - 8Gb DDR4 SDRAM 1.2V | SK Hynix

The SK Hynix H5AN8G4NAFR-UHC is an 8Gb CMOS DDR4 SDRAM organized as 2G x4, operating from a 1.2 V supply in a 78-ball FBGA package, and is supplied lead-free and halogen-free (RoHS compliant). DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, a family of volatile memory ICs that transfers data on both rising and falling edges of the clock. Within the memory hierarchy, DDR4 sits above DDR3 in the SDRAM lineage and serves as the main-memory workhorse for servers, workstations, PCs, and embedded controllers requiring large density and high bandwidth. Key features of this part include the large 8Gb monolithic density from the H5AN8G4NAFR-xxC family, a x4 organization suited to ECC-heavy server DIMMs, and full synchronization of all address and control inputs to a differential clock (CK_t/CK_c) for tightly timed operation. The UHC suffix denotes a SK hynix DDR4 speed-grade bin within the -xxC product family. Architecturally, the device is a CMOS DDR4 SDRAM with internal bank-group parallelism, on-die termination (ODT) and the DDR4 command/address timing discipline described in the SK hynix datasheet (Rev. 1.2, Jul. 2017). Fully synchronous operation referenced to both clock edges allows high sustained bandwidth per device, which is why x4 DDR4 components are the standard building blocks of registered and load-reduced server memory. Typical applications include server main memory modules (RDIMM/LRDIMM), high-density workstation and desktop DIMMs, networking and telecom line-card memory, and industrial systems requiring large, bandwidth-rich DRAM pools. Designers should confirm the exact UHC speed-grade timing parameters, IDD current table, and package ball map from the official SK hynix datasheet before layout, as DDR4 timing closure depends on the controller, topology, and thermal environment. This page synthesizes datasheet data, same-family drop-in speed-grade alternatives, distributor sourcing links, and practical design notes not consolidated in the manufacturer datasheet.

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H5AN8G4NCJR-xxC - 8Gb DDR4 SDRAM | SK Hynix
H5AN8G4NCJR-xxC

H5AN8G4NCJR-xxC - 8Gb DDR4 SDRAM | SK Hynix

The SK Hynix H5AN8G4NCJR-xxC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for main memory applications requiring large memory density and high bandwidth. It features fully synchronous operation referenced to both rising and falling edges of the clock, with internally pipelined and 8-bit prefetched data paths to achieve very high bandwidth. The device is available in a FBGA package and is lead-free and halogen-free, compliant with RoHS standards. DDR4 SDRAM is a type of synchronous dynamic random-access memory that doubles the data rate of its predecessor DDR3, operating at higher speeds and lower voltages (typically 1.2V). It is the industry standard for main memory in servers, desktops, laptops, and networking equipment, providing the high bandwidth and density required for modern computing workloads. DDR4 memory is part of the broader DRAM family, which includes DDR3, DDR4, and DDR5, and is essential for system performance in applications ranging from cloud computing to artificial intelligence. Key features of the H5AN8G4NCJR-xxC include a density of 8Gb, a data rate that supports high-speed operation (specific speed grade indicated by the xxC suffix), and a FBGA package that enables compact, high-density board designs. The device operates with a 1.2V power supply, reducing power consumption compared to earlier generations. It also supports on-die termination (ODT) and programmable read/write latencies, allowing system designers to optimize signal integrity and timing. Technically, the H5AN8G4NCJR-xxC uses a CMOS process and features an 8n-prefetch architecture, which allows it to transfer 8 data bits per clock cycle per pin, achieving high bandwidth. The device includes auto-refresh and self-refresh modes for low-power standby, and it supports a burst length of 8 (BL8) for efficient data transfer. The FBGA package provides excellent thermal and electrical performance, with a ball pitch that supports high-speed signaling. Typical applications include servers, data centers, networking equipment, and high-performance computing systems where large memory capacity and high bandwidth are critical. The device is also used in consumer electronics such as high-end desktops and gaming consoles, where DDR4 memory is the standard. Its low power consumption and high reliability make it suitable for enterprise storage and cloud infrastructure. When designing with this device, ensure proper signal integrity by following the manufacturer's layout guidelines, including controlled impedance traces and adequate decoupling. The device requires a stable 1.2V power supply and a reference voltage (VREF) for optimal operation. Consider using the on-die termination feature to match impedance and reduce reflections on the data bus.

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H5AN8G6NAFR - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix
H5AN8G6NAFR

H5AN8G6NAFR - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

The H5AN8G6NAFR is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM from SK Hynix, organized as 512M x 16. It operates from a 1.2V supply and is available in a 96-ball FBGA package. This device is designed for main memory applications requiring high density and bandwidth, offering fully synchronous operations referenced to both rising and falling edges of the clock. All addresses and control inputs are latched on the rising edge of CK, and data is transferred on both edges, enabling data rates up to 2400 MT/s. DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It provides higher module density and lower voltage (1.2V vs 1.5V) while delivering increased bandwidth. DDR4 is a key component in modern computing systems, from servers and desktops to embedded and networking equipment, where it serves as the main system memory. The H5AN8G6NAFR is part of the DDR4 SDRAM family, which includes x4, x8, and x16 configurations, and is essential for high-performance computing. Key features include a 1.2V power supply, 8Gb density, 512M x 16 organization, and a 96-ball FBGA package. It supports data rates up to 2400 MT/s (PC4-19200) and includes features such as auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (ODT), ZQ calibration, CRC, and write leveling. The device is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C. Technically, the H5AN8G6NAFR uses a high-performance CMOS process and features a pseudo-open-drain interface for compatibility with DDR4 controllers. It incorporates a DLL (Delay-Locked Loop) to align data output with the clock, and supports on-die termination for improved signal integrity. The device also includes a temperature sensor for auto-refresh rate adjustment, enhancing reliability in varying thermal conditions. Typical applications include servers, data centers, networking equipment, and high-end consumer electronics such as gaming PCs and workstations. Its high density and bandwidth make it ideal for memory-intensive tasks like virtualization, big data analytics, and real-time signal processing. The 1.2V operation reduces power consumption, making it suitable for energy-efficient designs. When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the pins. Follow the DDR4 layout guidelines for impedance matching and signal integrity, and use the ZQ calibration resistor (240 ohm) as specified in the datasheet.

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H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix
H5AN8G6NAFR-RDC

H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

The SK Hynix H5AN8G6NAFR-RDC is an 8Gb CMOS Double Data Rate 4 (DDR4) Synchronous DRAM organized as 512M x 16, operating from a 1.2V supply in a 96-ball TFBGA (FBGA-96) rectangular package. It delivers the large memory density and high bandwidth required for main-memory applications, with lead-free and halogen-free construction that is RoHS compliant. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology in servers, workstations, desktop PCs, and embedded systems. As a memory IC within the DRAM hierarchy, it synchronizes all operations to a clock and transfers data on both clock edges, doubling effective bandwidth versus SDR DRAM. DDR4 raised the bank-group architecture, lowered operating voltage from 1.5V (DDR3) to 1.2V, and increased prefetched data per access to 8n. Key features of this device include 8Gb density in a single die, a 16-bit wide data bus, multi-bank page burst access mode, and DDR4 bank-group architecture that improves effective bandwidth at a given clock rate. The 1.2V core supply significantly reduces memory-subsystem power compared with DDR3 solutions, which matters in density-critical modules and battery-operated equipment. Architecturally, the H5AN8G6NAFR family uses CMOS DRAM core technology with DDR4 signaling, on-die termination support, and a JEDEC-standard DDR4 interface. The -RDC speed grade suffix identifies the speed bin and temperature-range configuration of this variant; consult the SK Hynix datasheet for the exact clock-rate and timing parameters of the -RDC bin. Typical applications include main memory for industrial PCs and embedded controllers, DRAM memory modules (SO-DIMM/DIMM component population), networking equipment buffers, and high-capacity storage caching systems. The x16 organization suits designs that need moderate bus widths with high per-device density. Design consideration: DDR4 routing requires length-matched, impedance-controlled fly-by or tree topologies; verify the controller supports x16 devices and the -RDC speed grade before layout. This page synthesizes datasheet data, distributor listings, and verified drop-in alternatives not consolidated in the manufacturer datasheet.

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H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix
H5AN8G6NAFR-UHC

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

The SK Hynix H5AN8G6NAFR-UHC is an 8Gbit CMOS DDR4 SDRAM organized as 512M x 16, operating at 1.2V and 2400MT/s data rate, housed in a 96-ball FBGA (TFBGA) surface-mount package. It is ideally suited for main-memory applications requiring large memory density and high bandwidth. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR memory hierarchy, succeeding DDR3. A DRAM stores each bit in a capacitor-based cell and requires periodic refresh; DDR4 doubles bank-group parallelism versus DDR3, lowers operating voltage to 1.2V, and transfers data on both rising and falling clock edges referenced to a differential clock (CK_t/CK_c). Key features of this device include fully synchronous operation referenced to both edges of the differential clock, an asynchronous reset function, auto self-refresh and auto precharge, a data mask (DM) function for byte-wise write masking, dynamic on-chip termination (ODT), ZQ calibration, CRC function, and write leveling. Per LCSC product data, the device operates from 0C to +85C. Architecturally, all address and control input signals are sampled on the crossing of the positive edge of CK_t and negative edge of CK_c, while data is captured relative to data strobes (DQS_t/DQS_c) supporting source-synchronous timing. The 512M x 16 organization provides a 16-bit data width suited to embedded CPUs, industrial controllers, and memory-down designs that avoid DIMM connectors. Typical applications include main memory for embedded and industrial systems, networking equipment, set-top boxes, and high-bandwidth buffer memory in storage and imaging systems where large density and high bandwidth are required. A key design consideration is DDR4 signal integrity: routing length matching of DQ to DQS, ZQ resistor placement, and proper VDDQ termination planning are essential; the dynamic ODT and write-leveling features of this part help manage fly-by command routing on multi-device buses. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

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H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix
H5AN8G6NAFR-UHC

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix

The H5AN8G6NAFR-UHC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM from SK hynix, organized as 512M x 16 bits. It operates from a 1.2V supply and is available in a 96-ball FBGA package. This device is designed for main memory applications requiring high density and bandwidth, supporting data rates up to 2400 MT/s (PC4-19200). DDR4 SDRAM is a type of synchronous dynamic random-access memory that transfers data on both rising and falling edges of the clock, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, offering higher speed, lower voltage (1.2V vs 1.5V for DDR3), and improved power efficiency. DDR4 is widely used in servers, desktops, laptops, and embedded systems where high memory bandwidth and capacity are critical. Key features include fully synchronous operation referenced to both clock edges, programmable CAS latency, burst lengths of 8 and 4 (with burst chop), on-die termination (ODT) for signal integrity, and ZQ calibration for improved timing. The device supports auto self-refresh, auto precharge, data mask, write leveling, and CRC error detection, enhancing reliability in high-speed systems. It is lead-free and halogen-free, compliant with RoHS. Architecturally, the H5AN8G6NAFR-UHC uses a 20nm-class process technology, enabling high density with low power consumption. The 512M x 16 organization is ideal for memory modules and embedded applications requiring a 16-bit data bus. The FBGA-96 package provides excellent thermal and electrical performance, with a maximum operating temperature of 85°C. Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), servers, networking equipment, and high-performance computing systems. Its high bandwidth and low latency make it suitable for data-intensive workloads. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2400 MT/s. The device requires a 1.2V VDD and 2.5V VPP supply for wordline boost.

USD $5.74 在庫あり
H5AN8G6NCJR-PBC - 8Gb DDR4 SDRAM 2666Mbps FBGA-96 | SK hynix
H5AN8G6NCJR-PBC

H5AN8G6NCJR-PBC - 8Gb DDR4 SDRAM 2666Mbps FBGA-96 | SK hynix

The SK hynix H5AN8G6NCJR-PBC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM organized as x16, operating at data rates up to 2666 Mbps per pin and housed in a 96-ball FBGA package. It operates from a 1.2V core supply, supports temperatures from 0C to +95C, and is intended for main-memory applications that require large density and high bandwidth. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology in computing systems. A DDR4 DRAM stores data in capacitor-based cells addressed by row and column, synchronizing all operations to a differential clock so data is transferred on both rising and falling clock edges. Within the memory hierarchy, the DRAM sits between CPU caches and storage, forming the working memory of servers, PCs, and embedded controllers. Key features include fully synchronous operation referenced to both clock edges, auto self-refresh and auto precharge, an asynchronous reset function, data mask for partial writes, write leveling for fly-by topology signal integrity, CRC and CA parity protection, dynamic on-die termination (ODT), and ZQ calibration for output impedance matching. These functions enable reliable high-speed operation on multi-drop DDR4 memory buses. The device uses SK hynix advanced CMOS DRAM process technology in a monolithic 8Gb die. Bank-group architecture with per-bank-group activation allows back-to-back data access with reduced turnaround overhead, sustaining the effective bandwidth needed by 64-bit multi-DIMM or soldered-down memory subsystems. Internal bank interleaving and programmable CAS latency let system controllers optimize for either latency or throughput. Typical applications include embedded PC main memory, industrial computing and gateways, networking equipment line cards, set-top boxes and smart TV platforms, and test-and-measurement systems that use soldered-down DDR4. Design consideration: DDR4 fly-by routing requires careful length matching of the clock/address/command bus, per-byte ODT and drive-strength tuning through mode registers, and a clean 1.2V rail with adequate decoupling to support simultaneous switching output noise. This page adds value beyond the datasheet by compiling verified distributor stock, drop-in alternatives from the same footprint, and practical layout and selection guidance for the H5AN8G6NCJR-PBC.

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H5AN8G6NCJR-RDC - 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 | SK hynix
H5AN8G6NCJR-RDC

H5AN8G6NCJR-RDC - 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 | SK hynix

The SK hynix H5AN8G6NCJR-RDC is an 8Gb (512Mx16) CMOS Double Data Rate 4 (DDR4) Synchronous DRAM in a 96-ball TFBGA (PBGA96) rectangular package. It delivers DDR4-class bandwidth with fully synchronous operation referenced to both rising and falling edges of the clock, and is ideally suited for main-memory applications that require large memory density and high bandwidth. DDR4 SDRAM is a type of dynamic random-access memory that replaced DDR3 in the DRAM hierarchy. As a member of the broader semiconductor memory family (DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM), it transfers data on both clock edges, uses a lower operating voltage than DDR3, and integrates bank-group architectures to boost effective bandwidth in embedded and compute systems. Key features of the H5AN8G6NCJR family include auto self-refresh, auto precharge, asynchronous reset, data mask (DM), write leveling, CRC, dynamic on-chip termination (ODT), and ZQ calibration, per SK hynix product data. The 512Mx16 organization allows a single 8Gb device to populate a 16-bit-wide memory bus, reducing component count in cost-sensitive designs. Architecturally, the device offers fully synchronous operation referenced to both edges of the differential clock, internal bank-group parallelism, and programmable termination for signal integrity at DDR4 data rates. The CMOS process supports industrial-grade main memory subsystems with high bandwidth density per square centimeter of PCB area. Typical applications include embedded main memory for industrial controllers, networking equipment line cards, set-top boxes, and memory modules or soldered-down memory in x86/ARM compute platforms where a x16 DDR4 device is required. When designing this part in, observe DDR4 fly-by termination topology, route address/command with matched lengths, and verify ZQ calibration resistor placement per JEDEC DDR4 layout practice for best signal integrity. This page synthesizes distributor pricing, drop-in same-package alternatives, practical design notes, and comparison data not found in the SK hynix datasheet, giving engineers a single decision-ready reference for the H5AN8G6NCJR-RDC.

USD $19.69 在庫あり
H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
H5AN8G6NCJR-VKC

H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

The SK Hynix H5AN8G6NCJR-VKC is a high-performance 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, organized as 512M x 16, operating at a data rate of 2666 Mbps (PC4-2133). It is designed for main memory applications requiring large memory density and high bandwidth, such as servers, networking equipment, and high-end computing systems. The device operates from a 1.2V supply (VDD) with a range of 1.14V to 1.26V, and features a 96-ball FBGA package (FBGA-96) for compact, high-density board layouts. DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It offers higher speed, lower operating voltage (1.2V vs 1.5V for DDR3), and improved signal integrity through on-die termination (ODT) and data bus inversion (DBI). DDR4 is the industry standard for main memory in servers, desktops, laptops, and embedded systems, providing the bandwidth and capacity required for modern computing workloads. Key features include a burst length of 8 (BL8) with burst chop (BC4), programmable CAS latency, write leveling, dynamic on-chip termination (Dynamic ODT), ZQ calibration, and CRC (cyclic redundancy check) for data integrity. The device supports auto self-refresh, auto precharge, asynchronous reset, and data mask functions, ensuring reliable operation in demanding environments. It operates over a temperature range of 0°C to +95°C (TC), making it suitable for commercial and industrial applications. The H5AN8G6NCJR-VKC utilizes advanced CMOS process technology, achieving low power consumption with a typical operating current of 28mA (IDD2N) and 45mA (IDD4R). The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm, enabling high-speed signal routing. The device is lead-free and halogen-free, complying with RoHS and REACH regulations. Typical applications include server main memory, networking switches and routers, high-performance computing (HPC), and embedded systems requiring high-density, high-bandwidth memory. The 2666 Mbps data rate and 8Gb density make it ideal for memory modules (DIMMs) and system-on-module (SoM) designs. When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the balls. Follow the DDR4 JEDEC standard (JESD79-4) for signal integrity and layout guidelines, including controlled impedance traces and matched lengths for the data, address, and command buses.

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H5AN8G6NCJR-xxC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
H5AN8G6NCJR-xxC

H5AN8G6NCJR-xxC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

The H5AN8G6NCJR-xxC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM from SK Hynix, designed for main memory applications requiring high storage density and high bandwidth. It operates with fully synchronous timing referenced to both rising and falling edges of the clock, with all address and control inputs latched on the rising edge of CK, while data, data strobe, and write data are synchronized to both edges. This device is part of the H5AN8G4NCJR-xxC, H5AN8G8NCJR-xxC, and H5AN8G6NCJR-xxC family, all sharing the same 8Gb density and DDR4 architecture. DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the industry standard for main memory in servers, desktops, laptops, and high-performance computing systems, offering higher bandwidth and lower power consumption than its predecessor DDR3. DDR4 operates at lower voltages (1.2V typical) and supports higher densities, making it essential for modern computing platforms. Key features of the H5AN8G6NCJR-xxC include a data rate of 2666 Mbps (as indicated by the 'VKC' speed grade), a 1.2V power supply, and a x16 organization (8Gb density organized as 512M x 16). The device supports standard DDR4 features such as on-die termination (ODT), programmable read/write latencies, and burst lengths of 8 and 4 with burst chop. It is available in a 96-ball FBGA package, which is the standard for DDR4 memory components. The H5AN8G6NCJR-xxC utilizes advanced CMOS process technology, enabling high-speed operation with low power consumption. The device includes a temperature-compensated self-refresh (TCSR) feature to reduce power in idle states, and supports a wide operating temperature range from 0°C to 95°C (TC) for standard operation. The memory is organized into 8 banks, providing efficient access patterns for high-bandwidth applications. Typical applications include server main memory, desktop and laptop RAM modules, networking equipment, and high-performance embedded systems. The high density and bandwidth make it suitable for data-intensive workloads such as cloud computing, virtualization, and real-time analytics. The device is also used in memory modules (DIMMs/SO-DIMMs) for consumer and enterprise computing. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and a separate VPP supply of 2.5V for wordline boost. Refer to the SK Hynix datasheet for detailed timing parameters and AC/DC operating conditions.

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H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix
H5AN8G6NDJR

H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix

The SK hynix H5AN8G6NDJR is a 8Gb CMOS Double Data Rate 4 (DDR4) Synchronous DRAM organized as 512M x 16, operating at 3200 Mbps (DDR4-3200) with a 1.2V supply. It is housed in a 96-ball FBGA package (13mm x 7.5mm) and is designed for high-density, high-bandwidth main memory applications in computing, networking, and industrial systems. DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It achieves higher speed and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in servers, PCs, and embedded computing. Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, reliability, and power efficiency, making the device suitable for high-speed data transmission and robust operation in demanding environments. The device supports a burst length of 8 and a burst chop of 4, with a CAS latency of 22 cycles at 3200 Mbps. It operates over a temperature range of 0°C to 85°C (TC) and is RoHS compliant. The 96-ball FBGA package with a 0.8mm ball pitch enables compact PCB layouts, while the 1.2V supply reduces power consumption compared to previous generations. Typical applications include main memory for servers, high-performance computing, networking equipment, and industrial control systems. The high density and bandwidth make it ideal for applications requiring large memory capacity and fast data throughput, such as data centers and AI accelerators. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 3200 Mbps. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.

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H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix
H5AN8G6NDJR-UHC

H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix

The SK Hynix H5AN8G6NDJR-UHC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, organized as 512M x 16, ideally suited for main memory applications requiring large memory density and high bandwidth. It operates at a speed grade of 3200Mbps (PC4-25600) and is supplied in a 96-ball FBGA package (13x7.5mm). DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3 with higher density, lower operating voltage (1.2V vs 1.5V), and improved signal integrity through on-die termination (ODT) and data bus inversion. As a volatile memory type, it stores data in capacitors that require periodic refreshing, and it transfers data on both edges of the clock signal, doubling throughput. DDR4 is the industry standard for main memory in servers, desktops, laptops, and high-performance embedded systems. Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, power efficiency, and reliability in high-speed systems. The device supports a maximum operating temperature of 85°C and is lead-free and halogen-free, compliant with RoHS. Architecturally, the H5AN8G6NDJR-UHC uses a 1x-nm class process technology, achieving high density with low power consumption. The 16-bit I/O configuration (x16) is ideal for applications requiring moderate bus width with high capacity per chip, reducing the number of devices needed on a memory module. The 96-ball FBGA package with a rectangular shape (JESD-30 code R-PBGA-B96) provides excellent thermal and electrical performance. Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), embedded computing systems, networking equipment, industrial PCs, and high-performance computing platforms. The 3200Mbps speed grade supports demanding workloads such as data analytics, virtualization, and real-time signal processing. When designing with this device, ensure proper VDD (1.2V) and VDDQ decoupling with 0.1uF and 1uF capacitors placed close to the balls. Follow the JEDEC DDR4 layout guidelines for impedance matching and signal integrity, and use the ZQ pin with a 240-ohm resistor to ground for calibration.

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H5AN8G6NDJR-XNC - 8Gb DDR4-3200 x16 DRAM | SK Hynix
H5AN8G6NDJR-XNC

H5AN8G6NDJR-XNC - 8Gb DDR4-3200 x16 DRAM | SK Hynix

The SK Hynix H5AN8G6NDJR-XNC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM organized as 512M x16, operating at a data rate of 3200 Mbps (DDR4-3200). It is housed in a 96-ball FBGA package (13x7.5 mm) and is designed for main memory applications requiring high density and bandwidth. The device supports a supply voltage of 1.2V (VDD) with a maximum of 1.26V, and features auto self-refresh, auto precharge, data mask, dynamic on-chip termination (DTC), ZQ calibration, CRC, write leveling, and asynchronous reset functions. DDR4 SDRAM is a type of volatile random-access memory that transfers data on both edges of the clock, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and higher speeds, making it essential for modern computing systems, servers, and embedded applications. As a memory IC, it falls under the hierarchy of DRAM -> SDRAM -> DDR4 -> memory IC -> semiconductor, and is a critical component for data storage and processing. Key features include a 512M x16 organization, 3200 Mbps data rate, 1.2V supply, and a 96-ball FBGA package. The device supports various functions such as auto self-refresh and ZQ calibration, which enhance reliability and signal integrity. The x16 interface allows for high bandwidth per chip, making it suitable for applications requiring wide data paths. Technically, the H5AN8G6NDJR-XNC uses a CMOS process and is fully synchronous, with a differential clock (CK_t/CK_c) and on-die termination for improved signal quality. It supports burst lengths of 8 and 4, and includes a programmable read latency (RL) and write latency (WL) for system optimization. The device also features a temperature-compensated self-refresh (TCSR) to reduce power consumption. Typical applications include laptop and desktop memory upgrades, industrial controllers, networking equipment, and embedded systems. Its high density and speed make it ideal for applications requiring large memory capacity and fast data access, such as AI edge devices and high-performance computing. When designing with this component, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines for DDR4 routing to maintain signal integrity. The device is RoHS compliant and lead-free, making it suitable for environmentally conscious designs.

USD $55.68 お問い合わせ
H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix
H5AN8G8NCJR-RDC

H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix

The SK Hynix H5AN8G8NCJR-RDC is an 8Gb (1GB) CMOS Double Data Rate IV (DDR4) Synchronous DRAM organized as x8, operating at 1.2V with data rates up to 2666 Mbps, housed in a 78-ball FBGA package. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology for servers, workstations, and high-end computing platforms. Within the memory hierarchy, DDR4 sits between the CPU cache and storage, providing the large density and high bandwidth that modern processors demand. DDR4 improved on DDR3 by lowering operating voltage from 1.5V to 1.2V, doubling bank groups to eight, and raising maximum data rates, which reduces system power while increasing effective bandwidth. The H5AN8G8NCJR family offers fully synchronous operation referenced to both rising and falling edges of the clock, with all addresses and control inputs registered on the rising edge of CK. Key features include 8Gb density in a single die, x8 organization, on-die termination (ODT), data mask (DM) support, and JEDEC-standard DDR4 command set. The -RDC suffix denotes the 2666 Mbps speed grade with a commercial operating temperature range. Architecturally, the device uses internal bank groups to allow interleave-friendly access patterns, and a PLL-free design with DLL for output timing alignment. Burst lengths of 8 (BL8) with sequential and interleave options, plus programmable CAS latency, let memory controllers optimize latency versus throughput. The 78-ball FBGA surface-mount package minimizes parasitic inductance, supporting high-speed signal integrity on fly-by-terminated DDR4 channels. Typical applications include server DIMMs and memory-down designs, workstations, industrial computing, networking equipment, and embedded systems requiring large memory density with high bandwidth. The x8 organization suits ECC-based server designs using x8-based chipkill implementations. Design consideration: DDR4 fly-by routing requires length-matched traces, VTT termination, and careful controller training; always validate the speed-grade suffix (-RDC versus -XNC or -VKC) against your controller's supported data rate. This page synthesizes distributor availability, drop-in alternatives within the SK Hynix 8Gb DDR4 family, and JEDEC-compatible cross-brand equivalents, plus practical design notes not found in the raw datasheet.

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H5AN8G8NCJR-VKI - DDR4 8Gb 2666Mbps DRAM | SK hynix
H5AN8G8NCJR-VKI

H5AN8G8NCJR-VKI - DDR4 8Gb 2666Mbps DRAM | SK hynix

The SK hynix H5AN8G8NCJR-VKI is an 8Gb DDR4 SDRAM DRAM chip organized as 1G x8, operating at 2666 Mbps data rate from a 1.2 V supply, housed in a 78-ball FBGA package. It is an industrial-grade ("I" temperature suffix) volatile memory component for main memory and embedded storage designs. DDR4 SDRAM is a synchronous dynamic random-access memory that transfers data on both clock edges (double data rate), providing high bandwidth for processors and SoCs. Within the memory hierarchy it sits as volatile main memory, below non-volatile flash storage and above cache, and is a core building block of power management and memory subsystem design in computing platforms. Key features of the H5AN8G8NCJR-VKI include the 8Gb (1G x8) density, a 2666 Mbps data rate (PC4-21300 class), a 1.2 V core supply that reduces power versus DDR3's 1.5 V, and the compact 78-ball FBGA surface-mount package suited to dense memory layouts. The industrial operating range supports extended-temperature designs where commercial-only DRAM is unsuitable. Technically, the part belongs to the H5AN8G8NCJR-xxC/xI DDR4 SDRAM family, which SK hynix documentation describes as an 8Gb CMOS Double Data Rate IV synchronous DRAM ideally suited for main memory applications requiring large memory density and high bandwidth. The x8 organization allows 78-ball packaging with fewer data lines per device, simplifying layout for 64-bit or ECC-enabled memory controllers. Typical applications include industrial controllers, computing modules, networking equipment, servers, and embedded systems where stable DDR4 sourcing still matters. The industrial grade supports factory automation and edge-computing platforms exposed to harsher thermal environments. When designing with this device, verify controller speed-grade compatibility (2666 Mbps), budget termination and VTT power for the DDR4 bus, and follow SK hynix layout guidance for fly-by clock routing and decoupling on the 1.2 V rail. This page synthesizes distributor stock and pricing data, same-family and cross-brand drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

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H5AN8G8NCJR-XNC - 8Gb DDR4-3200 SDRAM, x8, FBGA-78 | SK hynix
H5AN8G8NCJR-XNC

H5AN8G8NCJR-XNC - 8Gb DDR4-3200 SDRAM, x8, FBGA-78 | SK hynix

The SK hynix H5AN8G8NCJR-XNC is an 8 Gbit DDR4 SDRAM memory IC organized as 1 Gb x 8, rated at the DDR4-3200 speed grade (3200 Mbps data rate, 1.6 GHz clock), operating from a 1.14 V to 1.26 V supply (1.2 V nominal) over a 0 C to +85 C commercial temperature range in a 78-ball FBGA package measuring 7.5 mm x 11 mm. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC DDR memory family. It transfers data on both rising and falling clock edges and introduces a bank-group architecture with multiple internal banks per group, allowing higher effective bandwidth than DDR3 at lower operating voltage. In the system hierarchy, it sits as main-system memory below CPU cache and above storage such as NAND flash and eMMC. Key features of this device include fully synchronous operation referenced to both clock edges, auto self-refresh, auto precharge, an asynchronous reset function, dynamic on-chip termination (ODT), ZQ calibration, write leveling, CRC and CA parity support, and a data mask function. These capabilities simplify high-speed board design and maintain signal integrity at 3200 Mbps rates. The XNC speed grade and its bank-group architecture allow the memory controller to issue commands to different bank groups back-to-back, maximizing effective bandwidth in mainstream DDR4-3200 channels. Low 1.2 V operation reduces power versus DDR3 at equivalent bandwidth, while per-ball power figures of approximately 30 mA and 39 mA (per LCSC/JLCPCB listing) reflect efficient dynamic and standby behavior. Typical applications include desktop and embedded computing main memory, networking equipment line-card memory, industrial controllers, data-storage and logging subsystems, and replacement sourcing for end-of-life DRAM lines in servers and telecom platforms. Design considerations: at DDR4-3200, fly-by routing with per-DIMM or per-component ODT calibration is essential; verify ZQ resistor placement and controller ODT settings, and confirm that the operating temperature stays within the 0 C to +85 C range or enable auto self-refresh derating above 85 C. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

USD $30.69 お問い合わせ
H5AN8G8NDJR - 8Gb DDR4 SDRAM 3200MT/s | SK hynix
H5AN8G8NDJR

H5AN8G8NDJR - 8Gb DDR4 SDRAM 3200MT/s | SK hynix

The SK hynix H5AN8G8NDJR is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, organized as 1G x 8, operating at a data rate of 3200MT/s (DDR4-3200). It is housed in a 78-ball FBGA package (7.5x11mm) and is designed for main memory applications requiring high density and bandwidth. The device operates from a 1.2V supply (VDD) with a range of 1.14V to 1.26V, and supports a case temperature range of 0°C to +95°C. Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (DTC), ZQ calibration, CRC, and write leveling. These features enable robust signal integrity and power efficiency in high-speed systems. DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock, doubling the data rate of DDR3. It operates at lower voltages (1.2V vs 1.5V) and offers higher density and speed, making it the standard for modern computing. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in PCs, servers, and embedded systems. The H5AN8G8NDJR features a 1G x 8 organization, providing 8Gb of memory in a single chip. It supports data rates up to 3200MT/s, with a CAS latency of 22 (typical) and a tRCD/tRP of 22ns. The device includes on-die ECC (optional) and supports a burst length of 8 and 4 with burst chop. It also features a programmable read latency (RL) and write latency (WL) for system optimization. The FBGA-78 package offers a compact footprint with a 7.5x11mm body, suitable for space-constrained designs. Technically, the H5AN8G8NDJR uses a 20nm-class process technology, enabling high density and low power consumption. It supports a 1.2V supply with a tolerance of ±5%, and includes a VPP supply of 2.5V for wordline boost. The device has a self-refresh current of approximately 30mA (typical) and an active standby current of 60mA. It also features a temperature-compensated self-refresh (TCSR) to reduce power at lower temperatures. The device is RoHS compliant and lead-free. Typical applications include desktop and laptop PCs, servers, networking equipment, and embedded systems. The high bandwidth and low power make it ideal for memory-intensive tasks such as gaming, data analytics, and virtualization. In embedded systems, it provides reliable performance for industrial control and edge computing. When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins. Follow the layout guidelines in the datasheet for signal integrity, especially for the high-speed data and address lines. The ZQ pin requires a 240-ohm resistor to ground for calibration.

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H5AN8G8NDJR-XNC - 8Gb DDR4-3200 SDRAM | SK Hynix
H5AN8G8NDJR-XNC

H5AN8G8NDJR-XNC - 8Gb DDR4-3200 SDRAM | SK Hynix

The SK Hynix H5AN8G8NDJR-XNC is an 8Gb DDR4 SDRAM memory IC organized as 1G x 8, designed for high-speed, low-voltage memory applications. It operates at a data rate of 3200MT/s (DDR4-3200, PC4-25600) with a supply voltage of 1.2V (VDD) and I/O voltage of 1.2V (VDDQ). The device is housed in a 78-ball FBGA package (7.5x11mm) and is RoHS compliant. It supports an operating temperature range of 0°C to +95°C (TC), making it suitable for a wide range of computing and embedded systems. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock signal, effectively doubling the data rate. It is the successor to DDR3 and offers higher speed, lower power consumption, and increased density. DDR4 operates at a lower voltage (1.2V) compared to DDR3 (1.5V), reducing power consumption by up to 40%. It is a critical component in modern computing systems, serving as the main memory for CPUs, GPUs, and SoCs, and is part of the memory hierarchy that includes cache, main memory, and storage. Key features of the H5AN8G8NDJR-XNC include a bank group-based internal architecture that enhances performance, support for standard DDR4 features such as auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (DTC), ZQ calibration, write leveling, and CRC (Cyclic Redundancy Check) for data integrity. The device also supports on-die ECC (Error Correction Code) in some configurations, though this specific part is a standard non-ECC variant. The 78-ball FBGA package is optimized for high-density PCB layouts, and the device is available in tray packaging. Technically, the H5AN8G8NDJR-XNC implements a 16n prefetch architecture, which is standard for DDR4, allowing it to achieve high bandwidth with a relatively low clock frequency. The device supports a burst length of 8 (BL8) and can be configured for burst chop (BC4). It also supports various power-saving modes, including active power-down, precharge power-down, and self-refresh, which are essential for mobile and embedded applications where power efficiency is critical. The device is designed to operate with a 1.2V supply, and it integrates a temperature sensor for thermal management. Typical applications for the H5AN8G8NDJR-XNC include personal computers, servers, networking equipment, and embedded systems. Its high density and speed make it ideal for main memory in laptops and desktops, while its low power consumption is beneficial for battery-powered devices. In networking, it is used in routers and switches for packet buffering and routing tables. In embedded systems, it is used in industrial controllers, medical devices, and automotive infotainment systems. The device's wide temperature range and reliability make it suitable for industrial applications. When designing with this component, ensure proper decoupling capacitors are placed close to the VDD and VDDQ pins to minimize power supply noise. The device requires a stable 1.2V supply and a reference voltage (VREF) for the I/O. Follow the PCB layout guidelines in the datasheet to maintain signal integrity at 3200MT/s, including controlled impedance traces and proper termination. Also, consider the thermal environment, as the device is rated for up to 95°C case temperature.

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H5ANAG6NBJR-PBC - 16Gb DDR4 SDRAM DRAM Chip | SK hynix
H5ANAG6NBJR-PBC

H5ANAG6NBJR-PBC - 16Gb DDR4 SDRAM DRAM Chip | SK hynix

The SK hynix H5ANAG6NBJR-PBC is a 16Gb DDR4 SDRAM (Double Data Rate 4 synchronous DRAM) component, offered in a compact FBGA-96 ball-grid-array package for high-density main memory subsystems. DDR4 SDRAM is the mainstream generation of DRAM used as main system memory in PCs, servers, embedded controllers and networking equipment. Within the memory hierarchy it sits between caches/SSDs and storage, providing the large, fast working set that processors demand. The H5ANAG family belongs to SK hynix's 16Gb DDR4 portfolio, which the manufacturer positions as major DRAM for advanced compute, offering higher configurable densities than previous generations. Key characteristics of this family include a 16Gb (2 GB) density per die, DDR4 architecture operating at a nominal 1.2 V supply - roughly 20% lower operating voltage than DDR3, reducing power per bit - and data rates up to the DDR4 generation maximum of 3200 MT/s across the portfolio. Verified family features include auto self-refresh, data mask (DM) function, asynchronous reset, dynamic on-chip termination (ODT), ZQ calibration, write leveling and CRC function. Technically, the device is a CMOS DDR4 SDRAM implementing bank-group architecture with internal prefetch, supporting the JEDEC DDR4 feature set including bank groups, posted CAS and command/address training modes. The -PBC speed/temp code denotes a specific validated speed bin; verify the exact MT/s bin against the official SK hynix datasheet before final design sign-off. Typical applications include main memory for desktop and notebook platforms, embedded computing modules, industrial controllers, networking line cards and set-top or consumer electronics that use x16 DDR4 memory down on the baseboard. A key design consideration: DDR4 routing requires careful length matching of DQ/CA lines, correct VTT termination with dynamic ODT, and ZQ resistor placement; the 96-ball layout also constrains via fan-out, so plan layer stack-up early. This page synthesizes verified web data, family feature sets, drop-in alternative candidates and practical design notes in one place - information not consolidated in the manufacturer datasheet.

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H5ANAG6NBJR-VKC - 16Gb DDR4 SDRAM 2666Mbps | SK Hynix | Memory IC
H5ANAG6NBJR-VKC

H5ANAG6NBJR-VKC - 16Gb DDR4 SDRAM 2666Mbps | SK Hynix | Memory IC

The SK Hynix H5ANAG6NBJR-VKC is a 16Gb (2GB) DDR4 SDRAM component rated for 2666 Mbps data rate, organized with a x16-wide data interface and housed in a 96-ball FBGA (PBGA96) surface-mount package. It belongs to SK Hynix's DDR4 SDRAM family of high-density dynamic random access memories used in computing, industrial, and consumer platforms. DDR4 SDRAM (Double Data Rate fourth-generation Synchronous Dynamic Random Access Memory) is the mainstream volatile memory technology bridging the processor and storage hierarchy. In the memory hierarchy, DDR4 DRAM sits below CPU caches and above SSD/NAND storage, providing high-bandwidth working memory. It evolved from DDR3 by lowering the core voltage from 1.5V to 1.2V, raising bank-group parallelism, and introducing features such as a dynamic on-chip termination (ODT) scheme, ZQ calibration, write leveling, CRC for command/address integrity, and asynchronous reset, all of which this SK Hynix family supports. Key features of the H5ANAG6NBJR family include the 16Gb die density on advanced process nodes, 1.2V operation, auto self-refresh and self-refresh temperature operation across an industrial-relevant range of -40C to +95C (per the related VKC-grade SK Hynix DDR4 components listed by LCSC), data mask (DM) functionality, and CRC/ACTM-based signal integrity features for reliable multi-DIMM operation. Architecturally, this 16Gb DDR4 device uses bank groups with internal prefetch to sustain the 2666 Mbps DDR4 data rate while managing refresh overhead. On-die termination and driver strength calibration (ZQ) maintain eye margins on high-speed address/command and data buses, enabling robust operation on dense PCB stacks. Typical applications include industrial PCs and embedded controllers, network appliances and routers, set-top boxes and smart TVs, and gaming/consumer computing boards where high density per component reduces part count and BOM size. Design consideration: DDR4 routing demands length-matched fly-by or point-to-point topologies, controlled impedance, and careful VDDQ plane decoupling; verify the exact speed bin and temperature grade against the full SK Hynix datasheet before layout sign-off. This page adds engineering value beyond the datasheet by consolidating drop-in same-footprint alternates from the same SK Hynix DDR4 family, distributor stock signals, and practical layout guidance for the 96-ball FBGA footprint. Pricing shown is indicative as of 2026-09-04.

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H5ANAG6NCJR-XN - 16Gb DDR4-3200 SDRAM FBGA-96 | SK hynix
H5ANAG6NCJR-XN

H5ANAG6NCJR-XN - 16Gb DDR4-3200 SDRAM FBGA-96 | SK hynix

The SK hynix H5ANAG6NCJR-XN is a 16 Gigabit (1G x 16) DDR4 SDRAM rated for DDR4-3200 (3200 Mbps/pin) operation, powered from a 1.14V to 1.26V supply and housed in a 96-ball FBGA package approximately 8 mm wide. It belongs to SK hynix's G6-generation 16Gb DDR4 DRAM family and is designed for high-density main memory subsystems. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM hierarchy: DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM, a memory-class semiconductor used as the working memory of processors and controllers. Compared with DDR3, DDR4 lowers operating voltage to roughly 1.2V, doubles bank groups, and raises data rates well beyond 3200 Mbps, improving bandwidth per watt. Key features of this device include an auto self-refresh mode for low-power data retention, an auto precharge function, an asynchronous reset function for reliable initialization, a data mask (DM) function for selective byte writes, dynamic on-chip termination (ODT), and a ZQ calibration function that trims output driver strength against process and temperature variation. A CRC function supports command/address integrity and write leveling supports fly-by memory topology timing. Architecturally, the device is organized as 1G addresses of 16-bit words, arranged in bank groups that allow interleaved access for higher effective bandwidth. The 16-bit organization suits systems that populate two or four chips per 32/64-bit memory channel, common in embedded x86 and ARM designs. The -XN speed grade marks DDR4-3200 timing (per SK hynix speed-bin tables in the manufacturer datasheet). Typical applications include industrial controllers and embedded computing modules, network and communication equipment line cards, test and measurement instrumentation, and replacement/extension sourcing for legacy DDR4-based board designs that require 16Gb x16 density at DDR4-3200. For design, route address/command buses with fly-by topology, terminate with dynamic ODT, and follow the manufacturer datasheet for ZQ calibration resistor placement (240 ohm 1%) and power-rail sequencing between VDD and VDDQ rails. This page synthesizes distributor stock, pricing, drop-in alternatives, and practical DDR4 design notes not found in the manufacturer datasheet alone.

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H5ANAG6NCJR-XNC - 16Gb DDR4-3200 SDRAM x16 | SK Hynix
H5ANAG6NCJR-XNC

H5ANAG6NCJR-XNC - 16Gb DDR4-3200 SDRAM x16 | SK Hynix

The SK Hynix H5ANAG6NCJR-XNC is a 16Gb (1G x 16) DDR4 SDRAM memory IC operating at DDR4-3200 data rates from a 1.14V to 1.26V supply, housed in a 96-ball FBGA (PBGA) package. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, a class of volatile memory ICs that transfer data on both clock edges to achieve high bandwidth. In the memory hierarchy, DRAM sits between CPU caches and non-volatile storage such as NAND flash, serving as the primary working memory in computing systems. DDR4 doubled bank counts versus DDR3, lowered operating voltage from 1.5V to 1.2V, and added features such as bank grouping and a DBI (data bus inversion) option. Key features of this device include auto self-refresh, auto precharge, asynchronous reset, data mask (DM) function for x16 operation, dynamic on-chip termination (ODT), ZQ calibration, CRC function, and write leveling - all of which improve signal integrity and simplify high-speed memory controller interfacing. The x16 organization suits systems that do not require dedicated ECC devices, allowing one chip per 16-bit data lane. The -XNC speed bin supports 3200 Mbps/pin data rates at a CAS latency appropriate for DDR4-3200 operation, delivering roughly 51.2 Gb/s of peak bandwidth per component at full rate. The 96-ball FBGA surface-mount package keeps inductance low, which is essential at 3200 Mbps where trace-length matching, reference VDDQ planes, and on-die termination determine timing margin. Typical applications include industrial controllers and embedded computing modules, networking equipment line cards, set-top boxes, smart TVs, and replacement sourcing for legacy DRAM DIMM/module designs. The 16Gb density is well suited to designs needing 2 GB or more per component without the complexity of ECC with x8 parts. When designing with this part, keep fly-by or point-to-point topologies length-matched, verify the memory controller supports 16-bit data mask operation, and follow the JEDEC DDR4 power-ramp sequencing requirements for VDD, VDDQ, and VPP rails. This page synthesizes distributor pricing, same-package drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with data verified as of 2026-09-04.

USD $68.91 在庫あり
H5ANAG6NCMR-XNC - 16Gb DDR4 SDRAM x16 FBGA-96 | SK Hynix
H5ANAG6NCMR-XNC

H5ANAG6NCMR-XNC - 16Gb DDR4 SDRAM x16 FBGA-96 | SK Hynix

The SK Hynix H5ANAG6NCMR-XNC is a 16Gb (1G x 16) CMOS DDR4 Synchronous DRAM operating at a 3200 Mbps data rate from a 1.2V core supply, housed in a 96-ball FBGA package. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, a class of volatile memory that transfers data on both clock edges and synchronizes operation to a system clock. Within the memory hierarchy, DDR4 SDRAM sits below DDR5 and above DDR3, and serves as main memory in the broader power and data management IC ecosystem for computing systems. Key features of the H5ANAG6NCMR-XNC include its large 16Gb density organized as 1G words of 16 bits, a 3200 Mbps/pin transfer rate suitable for high-bandwidth main memory, a low 1.2V operating voltage that reduces dynamic power versus DDR3, and the space-saving FBGA (Fine-Pitch Ball Grid Array) package. The XN speed bin designation indicates the 3200 Mbps grade; the CMR suffix denotes standard CMOS DRAM process. Technically, DDR4 SDRAMs like this device use an 8n prefetch architecture, bank groups, and programmable CAS latency to sustain high effective bandwidth while managing access latency. Per SK hynix product documentation, the H5ANAG6NCMR family is ideally suited for main memory applications that require large memory density and high bandwidth, with normal power classification and 1.2V operation. Typical applications include desktop and notebook PC main memory modules, servers and embedded computing boards, industrial controllers requiring large volatile storage, and networking equipment data buffers. When designing with this device, ensure the memory controller supports DDR4-3200 timing and that fly-by routing, on-die termination, and power delivery for the 1.2V VDD rail follow JEDEC DDR4 layout practice. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

USD $95.16 在庫あり