H5ANAG6NCJR-XN - 16Gb DDR4-3200 SDRAM FBGA-96 | SK hynix
部品番号: H5ANAG6NCJR-XN ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $85.23 | $85.23 |
| 10 | $82 | $820.00 |
| 100 | $78.5 | $7,850.00 |
| 500 | $74.9 | $37,450.00 |
| 1,000 | $71.2 | $71,200.00 |
H5ANAG6NCJR-XN 概要
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM hierarchy: DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM, a memory-class semiconductor used as the working memory of processors and controllers. Compared with DDR3, DDR4 lowers operating voltage to roughly 1.2V, doubles bank groups, and raises data rates well beyond 3200 Mbps, improving bandwidth per watt.
Key features of this device include an auto self-refresh mode for low-power data retention, an auto precharge function, an asynchronous reset function for reliable initialization, a data mask (DM) function for selective byte writes, dynamic on-chip termination (ODT), and a ZQ calibration function that trims output driver strength against process and temperature variation. A CRC function supports command/address integrity and write leveling supports fly-by memory topology timing.
Architecturally, the device is organized as 1G addresses of 16-bit words, arranged in bank groups that allow interleaved access for higher effective bandwidth. The 16-bit organization suits systems that populate two or four chips per 32/64-bit memory channel, common in embedded x86 and ARM designs. The -XN speed grade marks DDR4-3200 timing (per SK hynix speed-bin tables in the manufacturer datasheet).
Typical applications include industrial controllers and embedded computing modules, network and communication equipment line cards, test and measurement instrumentation, and replacement/extension sourcing for legacy DDR4-based board designs that require 16Gb x16 density at DDR4-3200.
For design, route address/command buses with fly-by topology, terminate with dynamic ODT, and follow the manufacturer datasheet for ZQ calibration resistor placement (240 ohm 1%) and power-rail sequencing between VDD and VDDQ rails.
This page synthesizes distributor stock, pricing, drop-in alternatives, and practical DDR4 design notes not found in the manufacturer datasheet alone.
ドロップイン代替品: H5ANAG6NCJR-XN — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: H5ANAG6NCJR-XN （同一形状・フットプリント） — 相違点: Package, Interface, Data Rate, Memory Type, Mounting Type.
クイック比較ツール — 並列比較する代替部品を選択:
H5ANAG6NCJR-XNC
✅ ドロップイン✓ 在庫あり
$84.97 / 個
データシートを見る →H5ANAG6NCMR-XNC
✅ ドロップイン✓ 在庫あり
$31.4 / 個
データシートを見る →H5ANAG6NCR-VKC
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →H5ANAG6NCR-UHC
✅ ドロップイン✓ 在庫あり
$9.2 / 個
データシートを見る →H5ANAG8NCJR-XNC
✅ ドロップイン✓ 在庫あり
$65.625 / 個
データシートを見る →MT40A1G16TD-062E
✅ ドロップイン✓ 在庫あり
$18.41 / 個
データシートを見る →H5ANAG6NCJR-XN 最大定格＆電気的特性
| メモリタイプ | DDR4 SDRAM |
| Density | 16 Gbit (1G x 16) |
| メモリ構成 | 1G x 16 |
| データレート | 3200 Mbps/pin (DDR4-3200) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V |
| パッケージ | FBGA-96 (96-ball) |
| Package Width | 8 mm |
| 実装タイプ | Surface Mount (BGA) |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask (DM) | Yes |
| Dynamic On-Chip Termination (ODT) | Yes |
| ZQ Calibration | Yes |
| CRC (Command/Address) | Yes |
| Write Leveling | Yes |
| Maximum Standby Current | 0.074 A (per Vyrian listing) |
| RoHS ステータス | Compliant |
H5ANAG6NCJR-XN 8 mm ピン配置ガイド
H5ANAG6NCJR-XN (8 mm パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: H5ANAG6NCJR-XN.
詳細は データシート をご参照ください。
主な用途
H5ANAG6NCJR-XN の用途: 6 件s: Industrial Embedded Controllers, Embedded Computing Modules (COM/SOM), Networking and Communication Equipment, Test and Measurement Instrumentation, Firmware Boot and Embedded Logging Systems, DDR4 Memory Subsystem Replacement Sourcing.
Industrial Embedded Controllers
The H5ANAG6NCJR-XN fits industrial embedded controllers that require gigabytes of working memory with proven DDR4 reliability. Its 16Gb 1Gx16 organization lets a four-chip 64-bit channel reach 8GB with only four components, conserving board area in compact PLC and IPC form factors. The 1.14V~1.26V DDR4 rail reduces memory subsystem power versus DDR3, easing thermal design in sealed fanless enclosures, while auto self-refresh preserves RAM contents during suspend states used in industrial energy-saving modes. Dynamic ODT and ZQ calibration maintain signal integrity across the wide temperature swings typical of factory-floor cabinets. Place the DRAM within controlled-length fly-by routing of the SoC and re-characterize leveling at the DDR4-3200 target clock for the specific stackup.
おすすめ
Embedded Computing Modules (COM/SOM)
Computer-on-modules and system-on-modules use one to four 16Gb x16 DDR4 components to deliver 2GB-8GB of soldered-down memory without SO-DIMM sockets, improving vibration tolerance for mobile and edge deployments. The H5ANAG6NCJR-XN's DDR4-3200 speed matches the memory controllers of modern ARM and x86 SoCs, and its x16 organization pairs naturally with 32-bit and 64-bit channel widths. The asynchronous reset function simplifies power-rail sequencing design across the module's multi-rail PMIC. Because memory is soldered, designers should validate a second source - the pin-compatible H5ANAG6NCJR-XNC or cross-vendor MT40A1G16TD-062E - through the SoC vendor's memory training suite before freezing the module BOM.
おすすめ
Networking and Communication Equipment
Line cards, switches, and routers use deep packet buffers and large flow tables that demand high DRAM density per watt. The H5ANAG6NCJR-XN supplies 16Gb per component at DDR4-3200, and its CRC function protects the command/address bus in high-availability designs where an undetected command error would corrupt traffic state. The data-mask feature enables efficient partial writes when updating packet headers or table entries without read-modify-write cycles. With four devices per 64-bit channel, designers reach 8GB per channel with FBGA-96 footprints shared across the SK hynix 16Gb family, simplifying dual-source layouts. Terminate address/command nets per the fly-by topology and enable ODT values recommended in the SK hynix datasheet for 3200 Mbps operation.
おすすめ
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require large acquisition memories to capture long records at high sample rates. The H5ANAG6NCJR-XN's 16Gb density per package allows multi-gigabyte capture buffers in a small footprint, and the DDR4-3200 interface sustains the sustained streaming bandwidth needed to offload acquisition data between trigger events. The ZQ calibration function keeps driver impedance accurate as the instrument's internal temperature rises during long captures, preserving eye margins at 3200 Mbps. Instruments benefit from the shared FBGA-96 footprint across the SK hynix 16Gb x16 family, letting memory-per-channel be scaled in later product revisions without PCB respin by populating variant suffixes validated in the instrument's controller QVL.
おすすめ
Firmware Boot and Embedded Logging Systems
Distributor product descriptions position the H5ANAG6NCJR family for data storage, firmware boot, and embedded logging roles where in-system memory holds code-shadow and event logs. The auto self-refresh mode retains logged data through processor sleep transitions with standby current low enough (listed maximum standby 0.074 A) for battery-buffered logging nodes. The 16Gb x16 organization provides 2GB per chip, ample for shadow-copying bootloader and OS images during secure firmware update sequences, with the asynchronous reset function guaranteeing a known DRAM state after brown-out events. Design the logging system to retrain DDR4 after each reset, and store critical log pointers in non-volatile flash (e.g. SPI NOR such as the M25Q/N25Q family) alongside the DRAM buffer.
おすすめ
DDR4 Memory Subsystem Replacement Sourcing
For boards already designed around 16Gb x16 DDR4-3200 in FBGA-96, the H5ANAG6NCJR-XN serves as a replacement or extension component when original memory sources become constrained. Its footprint and organization match the other SK hynix 16Gb x16 variants (H5ANAG6NCJR-XNC, H5ANAG6NCMR-XNC), enabling drop-in population on existing land patterns. Replacement sourcing still demands re-running the memory controller's training and qualification sequence, because DRAM vendors revise dies and refresh configurations across generations. Verify the suffix meaning (speed bin and temperature grade) against the SK hynix part-number key, purchase from franchised or traceable distributors such as LCSC or Octopart-listed channels, and retain date-code traceability for quality-managed production environments.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: H5ANAG6NCJR-XN — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | H5ANAG6NCJR-XNC | H5ANAG6NCMR-XNC | H5ANAG6NCR-UHC | MT40A1G16TD-062E |
|---|---|---|---|---|---|
| Package | FBGA-96 (96-ball) | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 (comparable footprint) |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Micron Technology |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 |
| Supply Voltage | 1.14 V - 1.26 V | 1.14 V - 1.26 V | 1.14 V - 1.26 V | 1.14 V - 1.26 V | 1.2 V nominal DDR4 |
| Feature Set (ODT/ZQ/CRC/Write Leveling) | All supported | All supported | All supported | All supported | All supported |
主な差別化要因
- Maximum density in the SK hynix DDR4 x16 lineup （vs H5AN8G6NCJR-UHC)
- DDR4-3200 top speed bin (-XN family) （vs H5ANAG6NCMR-XNC)
- Same-family second sourcing on identical FBGA-96 footprint （vs MT40A1G16TD-062E)
設計ノート
Route the DDR4-3200 address/command bus in fly-by topology from the controller through each DRAM component, with length-matched clock and strobe pairs. At 3200 Mbps the eye is narrow: keep all data-group skews within controller spec, reference signals to continuous ground planes, and enable dynamic ODT plus write leveling during memory training. Use the SK hynix datasheet IBIS models for pre-layout simulation of the 1.2V signaling environment before freezing the stackup.
The device operates at a nominal 1.2V rail with a permitted 1.14V-1.26V window; select a DDR4 PMIC (with VPP 2.5V rail support as required by the DDR4 standard) and verify sequencing between VDD, VPP, and VDDQ per the SK hynix power-up procedure, using the asynchronous reset input to hold the device in reset until rails stabilize. Budget for the listed 0.074 A standby maximum when sizing power for suspend states, and decouple each rail with a bulk capacitor plus local 0.1uF ceramics at each ball group.
The most frequent failure with 16Gb dies is configuring the controller for an 8Gb address map, which produces aliased addressing or training failure - confirm the SoC memory controller supports 16Gb row/column decode before layout. The ZQ ball needs its own 240-ohm 1% resistor to ground per device, placed close to the ball and never shared. Finally, suffixes within the H5ANAG6 family encode speed and temperature options; always verify the exact suffix meaning against the SK hynix part-number decoder before qualifying a second source.
コンプライアンス情報
RoHS compliance confirmed via JLCPCB/LCSC listings. REACH, halogen-free, and conflict-minerals status not stated in retrieved data - request SK hynix environmental declarations.
