H5AN8G6NCJR-PBC - 8Gb DDR4 SDRAM 2666Mbps FBGA-96 | SK hynix
部品番号: H5AN8G6NCJR-PBC ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $4.65 | $4.65 |
| 10 | $4.3 | $43.00 |
| 100 | $3.95 | $395.00 |
| 500 | $3.6 | $1,800.00 |
| 1,000 | $3.3 | $3,300.00 |
H5AN8G6NCJR-PBC 概要
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology in computing systems. A DDR4 DRAM stores data in capacitor-based cells addressed by row and column, synchronizing all operations to a differential clock so data is transferred on both rising and falling clock edges. Within the memory hierarchy, the DRAM sits between CPU caches and storage, forming the working memory of servers, PCs, and embedded controllers.
Key features include fully synchronous operation referenced to both clock edges, auto self-refresh and auto precharge, an asynchronous reset function, data mask for partial writes, write leveling for fly-by topology signal integrity, CRC and CA parity protection, dynamic on-die termination (ODT), and ZQ calibration for output impedance matching. These functions enable reliable high-speed operation on multi-drop DDR4 memory buses.
The device uses SK hynix advanced CMOS DRAM process technology in a monolithic 8Gb die. Bank-group architecture with per-bank-group activation allows back-to-back data access with reduced turnaround overhead, sustaining the effective bandwidth needed by 64-bit multi-DIMM or soldered-down memory subsystems. Internal bank interleaving and programmable CAS latency let system controllers optimize for either latency or throughput.
Typical applications include embedded PC main memory, industrial computing and gateways, networking equipment line cards, set-top boxes and smart TV platforms, and test-and-measurement systems that use soldered-down DDR4.
Design consideration: DDR4 fly-by routing requires careful length matching of the clock/address/command bus, per-byte ODT and drive-strength tuning through mode registers, and a clean 1.2V rail with adequate decoupling to support simultaneous switching output noise.
This page adds value beyond the datasheet by compiling verified distributor stock, drop-in alternatives from the same footprint, and practical layout and selection guidance for the H5AN8G6NCJR-PBC.
ドロップイン代替品: H5AN8G6NCJR-PBC — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: H5AN8G6NCJR-PBC （同一形状・フットプリント） — 相違点: Package, Operating Temperature, Data Rate, Interface, Lead-Free / Halogen-Free.
クイック比較ツール — 並列比較する代替部品を選択:
H5AN8G6NAFR-PBC
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$3.55 / 個
データシートを見る →H5AN8G6NAFR-VKC
✅ ドロップイン✓ 在庫あり
$6.25 / 個
データシートを見る →H5AN8G6NAFR-UHC
✅ ドロップイン✓ 在庫あり
$5.7422 / 個
データシートを見る →H5AN8G6NAFR-RDC
✅ ドロップイン✓ 在庫あり
$3.05 / 個
データシートを見る →H5AN8G6NCJR-VKC
✅ ドロップイン✓ 在庫あり
$60 / 個
データシートを見る →K4A8G165WC-BCRC
✅ ドロップイン✓ 在庫あり
$23 / 個
データシートを見る →H5AN8G6NCJR-PBC 最大定格＆電気的特性
| メモリタイプ | DDR4 SDRAM |
| Memory Organization | 8Gb x16 (512M x 16) |
| メモリサイズ | 8 Gbit |
| Family Data Rate Range | Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) |
| Supply Voltage (VDD) | 1.2 V |
| パッケージ | FBGA-96 (96-ball fine-pitch BGA) |
| 実装タイプ | Surface Mount |
| 動作温度 | 0C to +95C |
| インターフェース | Parallel, synchronous to both clock edges |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask Function | Yes |
| Write Leveling | Yes |
| CRC Function | Yes |
| Dynamic On-Die Termination (ODT) | Yes |
| ZQ Calibration | Yes |
| Lead-Free / Halogen-Free | Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) |
| RoHS ステータス | Compliant |
H5AN8G6NCJR-PBC fbga-96 (96-ball fine-pitch bga) ピン配置ガイド
H5AN8G6NCJR-PBC (fbga-96 (96-ball fine-pitch bga) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: H5AN8G6NCJR-PBC.
詳細は データシート をご参照ください。
主な用途
H5AN8G6NCJR-PBC の用途: 6 件s: Embedded PC / Industrial Motherboard Main Memory, Networking Equipment Line Cards, Set-Top Box and Smart TV Platforms, Edge AI and Vision Modules, Test and Measurement Instruments, Automotive-Adjacent Infotainment and Telematics (Non-AEC).
Embedded PC / Industrial Motherboard Main Memory
Industrial motherboards and embedded PC platforms use soldered-down DDR4 for shock/vibration reliability and lower profile than SO-DIMMs. The H5AN8G6NCJR-PBC supplies 1 GB per x16 device at up to 2666 Mbps, letting a single 16-bit controller channel reach roughly 4.2 GB/s of peak bandwidth. Its auto self-refresh preserves memory contents in S3/S4 low-power states, and the asynchronous reset pin simplifies power-rail sequencing recovery after watchdog resets. With 0C to +95C operation, it suits fanless enclosures; designers should validate thermal margin at maximum sustained bandwidth since DDR4 IDD scales with utilization.
おすすめ
Networking Equipment Line Cards
Switch, router, and gateway line cards require packet-buffer memory with high random-access bandwidth and deterministic refresh behavior. The H5AN8G6NCJR-PBC's bank-group architecture sustains back-to-back accesses at 2666 Mbps per pin, while write leveling and dynamic ODT maintain signal integrity on fly-by-routed address/command buses common in multi-DRAM networking layouts. CRC and CA parity on DDR4 help detect link-level errors in electrically noisy chassis. For deep packet buffering, populate multiple devices across a 64-bit controller; for control-plane memory, a single x16 chip at 1 GB is often sufficient.
おすすめ
Set-Top Box and Smart TV Platforms
STB and smart-TV SoCs with 16-bit DDR4 controllers pair naturally with one H5AN8G6NCJR-PBC per box, providing 1 GB for video decode buffers, UI frame stores, and applications at minimal BOM cost. The device's ZQ calibration keeps output impedance matched across temperature, critical for long FPC or PCB traces to display-oriented SoCs, and data-mask enables efficient partial-frame writes. Its auto precharge reduces controller command overhead in sequential video-stream access patterns. At 1.2V, memory power stays low enough for energy-star compliant consumer products operating continuously in living-room thermal environments.
おすすめ
Edge AI and Vision Modules
Edge-AI accelerator modules and smart-camera SoMs need dense, high-bandwidth working memory for frame buffers and intermediate tensor storage. The H5AN8G6NCJR-PBC's 2666 Mbps x16 interface delivers the streaming bandwidth that CNN pipelines demand, and its CRC function protects data integrity during long high-utilization inference bursts. Soldering the DRAM on-module (versus DIMM) improves mechanical robustness for mobile robots and drones. System designers should budget module-level power for simultaneous DRAM streaming plus NPU load, and enable self-refresh between inference frames to cut average power in battery-powered deployments.
おすすめ
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and arbitrary waveform generators use DDR4 as deep acquisition memory, capturing long record lengths at high sample rates. The H5AN8G6NCJR-PBC offers 1 GB per chip; instrument front ends typically build multi-Gbyte pools from 16 or 32 devices on 64-bit plus chip-select channels. Write leveling and per-byte ODT tuning ensure timing margin across the long, heavily loaded DDR4 buses typical of instrument mainframes, while the asynchronous reset enables deterministic reinitialization between acquisition sessions. Verify refresh-tck scheduling so it does not perturb sustained streaming-capture bandwidth specifications.
おすすめ
Automotive-Adjacent Infotainment and Telematics (Non-AEC)
Commercial-temperature infotainment and telematics units built on DDR4-based SoCs use the H5AN8G6NCJR-PBC for navigation maps, media buffering, and connectivity stacks. Its 0C to +95C window covers cabin environments, and auto self-refresh keeps navigation state alive across ignition-off standby with the 1.2V rail maintained. For under-dash locations lacking forced airflow, derate sustained bandwidth according to the thermal analysis, since DRAM self-heating concentrates near the die center of the FBGA-96. Production automotive programs requiring AEC-Q100 should instead qualify SK hynix automotive-grade DDR4 SKUs explicitly.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: H5AN8G6NCJR-PBC — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | H5AN8G6NAFR-PBC | H5AN8G6NCJR-VKC | K4A8G165WC-BCRC |
|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 (AFR thin outline) | FBGA-96 - same | FBGA-96 (JEDEC x16 map) |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | x16 | x16 | x16 | x16 |
| Interface Voltage | 1.2 V (DDR4) | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C |
| Package Outline | Standard height (NCJR) | Thin (AFR) | Standard height - same | Standard height |
主な差別化要因
- Complete single-chip 16-bit channel （vs H5AN8G8NCJR-PBC)
- Thin-outline same-die variant available （vs H5AN8G6NAFR-PBC)
- Cross-brand dual-source at identical footprint （vs K4A8G165WC-BCRC)
設計ノート
DDR4 x16 fly-by routing requires clock/address/command length matching within the controller datasheet window, typically referenced to CK/CK# at the last DRAM. Keep DQ/DM/DQS length matched per byte lane and route over a continuous reference plane. Place the H5AN8G6NCJR-PBC within roughly 50 mm of the controller for single-load x16 channels; for multi-drop, use the controller's write-leveling support (this device supports it) to compensate per-DRAM flight-time skew.
Provide a dedicated 1.2V rail with bulk capacitance plus local 0402/0603 ceramics at each VDD/VDDQ ball cluster to handle simultaneous switching output noise at 2666 Mbps. Follow the controller vendor's power-ramp sequencing between VDD, VDDQ, and VPP, and use the asynchronous reset pin (RESET#) held low during power-up to prevent bus contention. Estimated: a single 8Gb device streaming at 2666 Mbps can draw hundreds of milliamps transiently - size the VRM for worst-case read-modify-write bursts, not average current.
Do not substitute DDR4 speed suffixes without verifying the ordering-information table: -PBC, -VKC, -UHC, and -RDC encode different speed and temperature codes, and a slower grade will fail timing-closure at 2666 Mbps controllers. Also update firmware memory training when swapping vendors (SK hynix vs Samsung), since drive-strength and ODT defaults differ; most bootloaders auto-train, but fixed register settings will break. Confirm package outline (NCJR standard vs NAFR thin) against enclosure clearance before layout release.
コンプライアンス情報
Family datasheet title states Lead-Free & Halogen-Free (RoHS Compliant); Lisleapex listing flags ROHS. REACH and conflict-minerals declarations must be requested from SK hynix.
