K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics
部品番号: K9NUGY8R6B-BCQ0 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K9NUGY8R6B-BCQ0 概要
NAND flash memory is a type of non-volatile storage technology that retains data without power. Within the memory hierarchy, it sits below DRAM in speed but offers far higher density and lower cost per bit, making it the dominant technology for SSDs, eMMC storage, USB drives, memory cards, and embedded flash. Samsung is one of the world's largest NAND flash manufacturers, and the K9 family of raw NAND devices has been an industry reference for decades.
Key characteristics of this device class include high storage density per package, page-oriented program and erase operations, and a command/address/data multiplexed I/O interface. Error-correcting code (ECC) handling is performed by the host controller, as raw NAND devices do not manage ECC internally. Program and erase endurance, data retention, and block organization parameters should be confirmed from the official Samsung datasheet before design-in.
Typical applications include solid-state drives, embedded storage modules, set-top boxes, digital televisions, network-attached storage, industrial data loggers, and removable media. In these systems the NAND device works alongside a flash controller that manages wear leveling, bad-block management, and ECC to deliver reliable long-term storage.
Design considerations include power-supply decoupling on the VCC rail, careful PCB layout of the multiplexed address/data bus for signal integrity, and respect for tWB/tRR timing parameters during program operations. Ensure the host controller ECC strength matches the datasheet requirement for the device's NAND cell technology, as newer NAND generations require stronger correction capability.
This page synthesizes cross-reference candidates, application guidance, and structured sourcing data in one place, adding value beyond the raw manufacturer datasheet listing.
ドロップイン代替品: K9NUGY8R6B-BCQ0 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K9NUGY8R6B-BCQ0 （同一形状・フットプリント） — 相違点: Memory Type, RoHS Status, Cell Type, Memory Technology, Product Family.
クイック比較ツール — 並列比較する代替部品を選択:
K9MUGY8R4A-BCQ0
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9MUGY8R4A-CCQ0
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9LUGY8J7D-BCK0
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9KUGY8J7C-BCK0
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$9.55 / 個
データシートを見る →K9JUGY8J5C-BCK0
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9NUGY8R6B-BCQ0 最大定格＆電気的特性
| Manufacturer | Samsung Electronics |
| Product Family | K9NUGY series NAND flash |
| メモリタイプ | NAND Flash |
| インターフェース | Asynchronous NAND I/O (command/address/data multiplexed) |
| 実装タイプ | Surface Mount |
| RoHS ステータス | unknown |
K9NUGY8R6B-BCQ0 standard ピン配置ガイド
K9NUGY8R6B-BCQ0 (standard パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: K9NUGY8R6B-BCQ0.
詳細は データシート をご参照ください。
主な用途
K9NUGY8R6B-BCQ0 の用途: 6 件s: Solid-State Drive (SSD) Storage, Embedded Storage Modules (eMMC/eUFS-class systems), Digital TV and Set-Top Box Firmware Storage, Industrial Data Loggers, Network Attached Storage and Routers, Removable Media and USB Storage.
Solid-State Drive (SSD) Storage
Raw NAND flash devices of this class form the storage core of client and enterprise SSDs, where multiple NAND packages are connected to a single SSD controller that manages wear leveling, garbage collection, and ECC. The K9NUGY8R6B-BCQ0's BGA surface-mount package enables high board density, and the standard asynchronous NAND interface integrates directly with mainstream SSD controller silicon. In this role the NAND's program/erase endurance and page program time directly determine drive write endurance and sustained throughput. Designers should match the controller's supported NAND generations and ECC strength to the datasheet requirements, and verify thermal design so that sustained write workloads keep the package within its specified operating temperature range.
おすすめ
Embedded Storage Modules (eMMC/eUFS-class systems)
Embedded storage designs combine raw NAND with a controller on a single module to provide managed flash storage for smart TVs, set-top boxes, industrial PCs, and networking equipment. The K9NUGY8R6B-BCQ0 serves as the non-volatile data store, while the module controller hides NAND-specific behaviors such as bad-block management and wear leveling from the host. Its high per-package density reduces component count and board area compared with lower-density alternatives. When designing such modules, firmware must implement the Samsung-specified bad-block marker scheme, and power-fail protection must ensure that interrupted program operations do not corrupt previously written pages. Verify the exact page and block organization from the Samsung datasheet before porting existing firmware.
おすすめ
Digital TV and Set-Top Box Firmware Storage
Digital televisions and set-top boxes use raw NAND to store firmware, channel databases, application images, and user recordings. The K9NUGY8R6B-BCQ0 fits this application because its high density accommodates increasingly large firmware images and DVR buffers, while its standard NAND interface connects to the SoC's built-in memory controller. Consumer SoCs typically include hardware ECC engines sized for the NAND generation they were designed against, so the NAND generation must match the SoC support list. Typical designs place the NAND on short, matched traces to the SoC and use the manufacturer's recommended decoupling network, since program operations inject current pulses onto shared supply rails during video recording.
おすすめ
Industrial Data Loggers
Industrial data loggers record sensor readings, machine health data, and event logs over multi-year service lives, requiring storage that retains data through power loss and harsh temperatures. A raw NAND device such as the K9NUGY8R6B-BCQ0 provides the required endurance and density when paired with a controller performing wear leveling, power-fail recovery, and error correction. The page-program architecture allows efficient sequential logging, and the BGA package withstands vibration better than socketed media. Designers must confirm the industrial temperature range and retention specifications from the Samsung datasheet, implement brown-out detection to stop program operations cleanly, and reserve spare blocks to sustain write endurance across the product's service life.
おすすめ
Network Attached Storage and Routers
Networking equipment uses NAND flash for boot images, configuration stores, firmware upgrades, and local caching. The K9NUGY8R6B-BCQ0's high density supports dual-firmware banking for safe over-the-air upgrades, where a failure during update leaves the previous image intact. Its standard NAND interface works with the memory controllers integrated into networking SoCs, and the surface-mount BGA package suits the compact layouts of router and NAS boards. Reliability is the primary requirement here: the design should implement read-retry and scrubbing in firmware to correct read disturbances over long powered-on periods, and the PCB should route the NAND bus away from switching regulator nodes to preserve signal integrity on the multiplexed I/O lines.
おすすめ
Removable Media and USB Storage
USB flash drives and memory card products use raw NAND die combined with compact single-chip controllers. The K9NUGY8R6B-BCQ0 can serve this market when its package outline and density align with the drive's form factor and capacity targets. In this cost-sensitive segment the NAND's cell technology determines cost per gigabyte, while its page program time influences sequential write speed as perceived by end users. Controllers for removable media implement simplified wear leveling sized to typical consumer duty cycles. Design teams should verify the NAND's voltage range matches the controller's power tree, typically a single low-voltage rail in portable products, and confirm that the controller ECC strength satisfies the Samsung datasheet requirement for this NAND generation.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K9NUGY8R6B-BCQ0 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K9MUGY8R4A-BCQ0 | K9MUGY8R4A-CCQ0 | K9LUGY8J7D-BCK0 |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | NAND Flash | NAND Flash | NAND Flash | NAND Flash |
主な差別化要因
- Newer UGY generation designation （vs K9JUGY8J5C-BCK0)
- Same-family substitution path （vs K9MUGY8R4A-BCQ0)
- Standard NAND interface compatibility （vs K9MUGY8R4A-CCQ0)
設計ノート
Raw NAND devices draw pulsed supply current during program and erase operations, with the erase phase typically the highest-current event. Place 100 nF ceramic decoupling capacitors immediately adjacent to each VCC and VCCQ ball, plus bulk capacitance per the Samsung datasheet recommendation. Confirm the exact VCC/VCCQ ranges from the official datasheet before finalizing the power tree, since NAND generations differ in their core versus I/O voltage domains. Shared rails with other memory should be locally regulated or well decoupled to prevent program-time droop.
The NAND interface multiplexes command, address, and data on one 8-bit or 16-bit bus with control signals (CLE, ALE, RE, WE). Keep these traces short and length-matched within the group, and route away from switching regulator inductors and clock lines. For BGA-packaged NAND, fan out with controlled-impedance breakout and reference the bus to a solid ground plane. Verify setup/hold compliance at your maximum clock rate using the datasheet AC timing table; derate for the full operating temperature range, not just room temperature.
The most frequent raw NAND integration errors are (1) firmware ECC strength below the datasheet requirement for the NAND cell technology, causing field data corruption over time, (2) missing power-fail handling that corrupts pages during brown-outs mid-program, and (3) PCB footprints drawn from an older package revision. Always pull the footprint and ball map from the current Samsung datasheet, implement the specified bad-block management scheme, and validate read-retry behavior across the full temperature range before mass production.
コンプライアンス情報
Compliance data was not present in verified web data as of 2026-09-04. Check Samsung's product page for environmental declarations.
