K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
部品番号: K9PRGY8S7M ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K9PRGY8S7M 概要
NAND flash is a type of non-volatile storage technology that retains data without power. Within the memory hierarchy, NAND flash sits below DRAM in speed but offers far higher density and lower cost per bit, making it the backbone of SSDs, eMMC modules, USB drives, memory cards, and embedded storage. NAND cells are arranged in series, which reduces die area and enables the multi-gigabit capacities required by modern consumer, industrial, and automotive systems. Samsung is one of the world's leading NAND producers, with its 3D V-NAND technology stacking cells vertically to increase density further.
Key characteristics of the K9-series include page-based program and block-based erase operations, asynchronous or toggled-mode interfaces, and internal ECC support on newer generations. Exact density, organization, page size, block size, and interface speed for this specific ordering code are not published in the retrieved web data and must be confirmed from the official Samsung datasheet.
Typical applications for this class of device include embedded storage in set-top boxes, smart TVs, industrial controllers, networking equipment, and solid-state drive assemblies where a raw NAND device is managed by a host controller or firmware layer such as FTL (Flash Translation Layer).
Design teams should confirm the exact package outline, ball map, supply voltage, and timing parameters against the Samsung datasheet before layout, since K9-series ordering codes encode density, configuration, and speed grade variations. Note that one distributor listing (OMO Electronic) attributes the MPN to BURNDY, which appears to be an indexing error given the K9 prefix and multiple corroborating NAND FLASH listings for Samsung.
This page synthesizes open-market sourcing data, lifecycle status, and alternative-part guidance not consolidated on any single distributor page.
ドロップイン代替品: K9PRGY8S7M — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K9PRGY8S7M （同一形状・フットプリント） — 相違点: Mounting Type, Memory Type, Package Type, RoHS Status, NAND Technology.
クイック比較ツール — 並列比較する代替部品を選択:
K9PRGY8S7M-CCK0
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9DMGY8J5B-CCK0
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K9PRGY8S7M 最大定格＆電気的特性
| メモリタイプ | NAND Flash |
| Manufacturer | Samsung Electronics |
| Package Type | BGA (surface mount) |
| 実装タイプ | Surface Mount |
K9PRGY8S7M bga (surface mount) ピン配置ガイド
K9PRGY8S7M (bga (surface mount) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: K9PRGY8S7M.
詳細は データシート をご参照ください。
主な用途
K9PRGY8S7M の用途: 6 件s: Solid-State Drive Storage, Embedded System Storage, Consumer Electronics Firmware Storage, Networking and Communication Equipment, Automotive Infotainment Data Storage, Industrial Data Loggers.
Solid-State Drive Storage
The K9PRGY8S7M fits SSD data-storage arrays where a dedicated controller, such as Samsung's MEX (S4LN045X01) controller used in the Samsung 850 PRO SSD family, manages multiple NAND packages through a flash translation layer. In this role the NAND provides the non-volatile media while the controller handles ECC, wear leveling, and garbage collection. Performance depends on parallel channel configuration; connecting multiple K9-series packages across independent channels multiplies bandwidth and hides program/erase latencies. Designers should verify density, page size, and toggle-mode timing from the Samsung datasheet to configure controller timing registers correctly, and should budget spare blocks for wear-leveling overhead over the drive's rated endurance.
おすすめ
Embedded System Storage
In set-top boxes, smart TVs, industrial controllers, and networking equipment, the K9PRGY8S7M serves as bulk non-volatile storage for firmware images, application data, and logs. Raw K9-series NAND is appropriate when the host SoC includes a NAND flash controller with hardware ECC, allowing the BOM to avoid the cost premium of managed eMMC. The trade-off is firmware responsibility: the design team must implement bad-block management and wear leveling. Use the BGA footprint for space-constrained boards, and reserve spare blocks per the datasheet specification since block retirement accumulates over product lifetime in always-on devices with frequent logging writes.
おすすめ
Consumer Electronics Firmware Storage
Consumer devices such as audio equipment, appliances, and toys require moderate-capacity non-volatile storage for code and user settings. The K9PRGY8S7M in a compact BGA surface-mount package supports automated assembly on high-volume lines. Because raw NAND density per package is high, one device often covers total firmware plus data needs, simplifying the BOM. Designers should implement a boot-block protection scheme so the primary firmware region is not erased by errant writes, and should validate cold-temperature boot timing since NAND read latency tolerances must remain within controller timing windows across the rated operating range.
おすすめ
Networking and Communication Equipment
Routers, switches, and baseband cards use K9-series NAND to store OS images, configuration files, and traffic logs. The K9PRGY8S7M provides the raw media while the system's CPU companion controller executes the FTL. High write-frequency logging workloads make wear leveling quality a reliability differentiator; industrial networking equipment should derate endurance generously and monitor block wear via SMART-style telemetry. When dual-bank firmware update schemes are used, capacity planning must account for storing two complete images simultaneously. Confirm supply voltage and interface timing from the Samsung datasheet to match the SoC's memory controller configuration before tape-out.
おすすめ
Automotive Infotainment Data Storage
Automotive infotainment head units and telematics boxes store navigation maps, media, and diagnostic logs on NAND flash. While the K9PRGY8S7M itself is not AEC-Q100 qualified per the available data, K9-series devices are used in consumer-grade automotive tiers where a dedicated controller with strong ECC handles the harsh electrical environment. For safety-relevant designs, prefer Samsung automotive-qualified storage such as the K4R-series automotive DRAM family for working memory paired with an eMMC. Wide supply-voltage transients, extended temperature derating, and power-fail integrity (write-atomic FTL journaling) are the key engineering considerations in this deployment.
おすすめ
Industrial Data Loggers
Industrial data loggers and SCADA edge nodes write sensor records continuously for years, making NAND endurance and power-fail robustness the dominant design factors. The K9PRGY8S7M provides dense raw storage; the controller must journal writes so a brownout never corrupts committed records, and must balance wear across blocks to reach the system lifetime target. Estimated: if the application writes 100 MB per day and the device endurance supports the datasheet P/E cycle count, capacity planning should include 2x over-provisioning for wear leveling. Verify the exact P/E cycle rating and page program time from the official Samsung datasheet before finalizing the endurance budget.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K9PRGY8S7M — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K9PRGY8S7M-CCK0 | K9DMGY8J5B-CCK0 |
|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | BGA (surface mount) | BGA - same footprint family | BGA - verify ball map |
| Memory Type | NAND Flash | NAND Flash | NAND Flash |
| Speed Grade Suffix | Base ordering code | -CCK0 | -CCK0 |
| Lifecycle Status | Active | Active (broker listings) | Active (broker listings) |
主な差別化要因
- Samsung-origin K9-series NAND die （vs K9DMGY8J5B-CCK0)
- Raw NAND cost efficiency （vs K3LKJKJ0CM-MUCP (eMMC))
- BGA surface-mount format （vs TSOP-packaged legacy K9 NAND)
設計ノート
One open-market listing (OMO Electronic) attributes K9PRGY8S7M to BURNDY, but this contradicts the K9 Samsung naming convention and multiple corroborating NAND FLASH listings from IC2IC and Alibaba naming Samsung. When sourcing from brokers, insist on Samsung-original marking, date codes, and, where possible, supplierqualification samples. Counterfeit or remarked NAND is a well-known risk in open-market memory procurement, and a misidentified density can cause hard failures at FTL initialization.
BGA-packaged NAND requires careful escape routing: plan ball-out fan-out before finalizing the footprint, use via-in-pad or dog-bone escapes consistent with your fab's capability, and verify the exact ball map from the official Samsung datasheet rather than assuming a generic BGA pattern. Keep the solder mask-defined pad geometry per JEDEC-style BGA land patterns specified by Samsung, and control reflow profile to avoid solder bridging on fine-pitch ball rows. Confirm ball count and package dimensions from the datasheet before library creation.
Decouple the NAND supply rails with at least 100 nF ceramic capacitor per supply ball pair plus one bulk capacitor per device, placed close to the BGA. Because this raw NAND shares a supply domain with the host controller in most designs, ensure power-fail detection circuitry can gate write enable in time to prevent torn page writes; a supervisory circuit with early-warning threshold gives the FTL time to complete or abort the current program operation cleanly.
コンプライアンス情報
Compliance status not stated in retrieved web data. Samsung memory products are typically RoHS compliant, but this must be confirmed from the official product page or datasheet.
