MOSFET
製品 (1294)
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
The Infineon IAUC120N06S5L011ATMA1 is an N-channel 60 V OptiMOS™ 5 power MOSFET delivering 310 A continuous drain current (Tj) and 1.1 mΩ maximum R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, packaged in the automotive-grade PG-TDSON-8-53 surface-mount footprint. The IAUC120N06S5L011 datasheet names three headline parameters: 60 V drain-to-source breakdown, 1.1 mΩ on-resistance, and 120 A continuous current (per Infineon's marketing ordering code), with the package dissipation rated at 188 W at T<sub>C</sub> = 25 °C. The S5 family designation indicates the latest OptiMOS 5 60 V generation, which reduced R<sub>DS(on)</sub> by roughly 30 % and improved figure of merit (FOM) versus the previous OptiMOS 3 generation. An N-channel power MOSFET is a voltage-controlled majority-carrier device where a positive gate-to-source voltage inverts the surface of the body region to form a conducting n-channel between source and drain. Power MOSFETs are the foundational switching element in modern DC-DC converters, motor drives, and load switches; the N-channel variant is preferred over P-channel in high-current paths because electron mobility is roughly 2-3× higher than hole mobility, yielding lower on-resistance for the same silicon area. The 60 V class covers 12 V automotive bus, 24 V mild-hybrid, 48 V boardnet, and telecom hold-up applications. Key features of the IAUC120N06S5L011ATMA1 include the very low 1.1 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub> = 10 V, low gate charge for fast switching, an avalanche-rated body diode, and 100 % Rg-tested and UIL-tested parts per Infineon's automotive quality flow. The PG-TDSON-8-53 (also known as TDSON-8 FL) leadless package has a metal drain tab on the bottom side that doubles as the thermal pad, allowing direct soldering to a copper pour for very low thermal resistance. OptiMOS 5 also introduced a controlled Q<sub>rr</sub> body-diode trade-off suitable for synchronous-rectifier topologies. Typical applications for this part include 12 V and 48 V automotive DC-DC converters (e.g. buck/boost between 12 V battery and 48 V mild-hybrid bus), high-current motor drive H-bridges (EPS, water pump, fan), OR-ing and hot-swap controllers in server 12 V rails, and battery protection FETs in e-scooter and e-bike packs. AEC-Q101 automotive qualification makes it a drop-in for safety-relevant loads. Use it where the absolute minimum conduction loss is required and the layout can accept the large 5 mm × 6 mm TDSON footprint. When designing with this MOSFET, mind the layout: the source-sense (Kelvin) pin on pin 4 must be tied to the gate-drive return to prevent C<sub>gd</sub>-induced turn-on. The exposed pad must be soldered to a copper area of at least 100 mm² on each PCB side for the published 188 W T<sub>C</sub> rating; without that copper, derate aggressively. For paralleled parts, source-sense resistors mitigate current imbalance.
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUC120N06S5L015ATMA1 is an N-channel OptiMOS 5 power MOSFET rated for 60 V VDS and 1.5 mΩ maximum RDS(on), housed in a surface-mount PG-TDSON-8-43 package. It supports continuous drain current of 235 A at Tj (with appropriate PCB thermal design) and power dissipation of 167 W at Tc, and is qualified to AEC-Q101 for automotive DC-DC converters and battery disconnect switches. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route and convert electrical energy. Within the broader taxonomy it sits as: MOSFET -> transistor -> discrete semiconductor -> semiconductor. The OptiMOS 5 family is Infineon's fifth-generation trench MOSFET platform, optimized for very low on-resistance per unit silicon area, fast switching, and low gate charge to minimize conduction and switching losses in high-current power paths. Key features include 1.5 mΩ maximum RDS(on) at VGS=10 V, ultra-low gate charge of 88 nC typical for fast switching at high frequency, and an operating temperature range suitable for automotive underhood environments. The PG-TDSON-8-43 package exposes the drain through a large metal tab for direct PCB cooling, enabling very high current handling in a compact 5x6 mm footprint. Technical depth: the device uses Infineon's advanced OptiMOS 5 trench cell architecture which trades slightly higher gate capacitance for dramatically lower RDS(on) per area versus prior generations. The 60 V drain-source rating gives substantial margin over 12 V and 24 V automotive bus voltages, supporting transient robustness up to the avalanche rating. The 88 nC total gate charge keeps driver losses low at 100 kHz+ switching frequencies typical of high-current synchronous DC-DC converters. Typical applications include high-current automotive 12 V and 48 V DC-DC converter stages, battery isolation switches in electric vehicle powertrains, motor drive inverter half-bridges, and high-power OR-ing / hot-swap circuits in server and telecom power supplies. The part is also well suited to industrial synchronous rectification where every milliohm of conduction loss translates into tangible efficiency gains. Design consideration: although the silicon can carry 235 A continuously at Tj, achieving this in practice requires substantial PCB copper pour and thermal vias under the exposed pad; otherwise the junction will derate the usable current well below the headline number. Plan thermal management as the first step, not the last. This page synthesizes distributor pricing, drop-in alternatives, and practical thermal design guidance for the IAUC120N06S5L015ATMA1 that go beyond the manufacturer datasheet abstract.
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUC120N06S5L032ATMA1 is a 60 V N-channel power MOSFET rated at 120 A continuous drain current (Tj) with an industry-leading 3.2 mOhm maximum R_DS(on), housed in a surface-mount PG-TDSON-8-34 (5x6 mm) package. Built on Infineon's OptiMOS 5 60 V technology platform, this part targets automotive power management and high-current synchronous-rectification applications. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate current in power-conversion circuits. The N-channel enhancement-mode MOSFET, the dominant type in low-voltage power systems, places the load between the supply rail and the low-side drain path so that a positive gate-to-source voltage turns the device on. Power MOSFETs sit within the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs. OptiMOS 5 is Infineon's fifth-generation 60 V trench process, designed to lower both conduction loss (low R_DS(on)) and switching loss (low Q_G and gate charge) versus prior generations. Key parametric advantages of the IAUC120N06S5L032ATMA1 include 3.2 mOhm R_DS(on) at 10 V V_GS, 94 W P_D at T_C = 25 C, and an industry-standard SSO8 (5x6 mm) footprint that drops into existing 60 V high-current designs. The part is fully automotive-qualified to AEC-Q101, supporting ADAS power management, 12 V battery-connected load switching, and motor-drive half-bridges in chassis and powertrain ECUs. From an architecture standpoint, the OptiMOS 5 cell shrinks gate charge and output capacitance while keeping a robust body diode for hard-switched topologies. This enables lower switching-node ringing and reduced driver-stage stress, particularly when paired with 12 V gate drivers in half-bridge or buck-converter synchronous-rectifier positions. Typical applications include 12 V automotive power distribution, ADAS sensor and ECU power rails, BLDC motor-drive low-side switches, and high-current synchronous rectification in telecom and server DC-DC converters. When designing with this part, keep source-lead inductance short and place the gate-drive loop area tight to control ringing; verify T_j(max) at worst-case I_D and R_thJA in the PG-TDSON-8-34 footprint, since this 5x6 mm package requires an appropriately sized copper pour for thermal relief. This page consolidates distributor pricing, same-package drop-in alternatives, and design considerations not summarized in the manufacturer datasheet, giving engineers a faster path to sourcing and substitution decisions.
IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
The Infineon IAUC120N06S5N011ATMA1 is a 60 V N-channel OptiMOS™-5 power MOSFET in a PG-TDSON-8-53 (SSO8 5x6) surface-mount package, qualified to AEC-Q101 for automotive use. It delivers a maximum drain current of 310 A (Tj) and continuous drain current (Id) of 120 A with an ultra-low typical on-resistance of 1.1 mΩ at 10 V Vgs, dissipating up to 188 W at Tc=25°C. The part uses Infineon's 5th-generation OptiMOS trench technology to minimize conduction and switching losses in high-current 12 V/24 V automotive systems. A power MOSFET is a voltage-controlled switch that uses an insulated gate to modulate current flow between drain and source terminals. N-channel enhancement-mode MOSFETs like this one are the workhorse of low-voltage power conversion: when Vgs exceeds the threshold, the device conducts; when Vgs is pulled low, it blocks. OptiMOS-5 represents Infineon's 5th-generation trench architecture, which lowers Rds(on) per unit silicon area, reduces gate charge (Qg), and improves body-diode ruggedness. In the broader taxonomy, this part is a discrete power MOSFET within the power semiconductor family used in DC-DC converters, motor drives, and load switches. Key features include 1.1 mΩ typical Rds(on) at Vgs=10 V, 60 V Vdss breakdown voltage, ±20 V Vgs rating, and an integrated ESD-protected gate. The SSO8 5x6 package provides a low thermal resistance path (RthJC around 0.8 C/W typical) and is designed for top-side cooling on PCB. The part is optimized for normal-level gate drive (10 V) and supports high-frequency switching up to several hundred kHz in synchronous rectification stages. AEC-Q101 qualification plus automotive-grade reliability make it suited to under-the-hood and chassis electronics. The IAUC120N06S5N011ATMA1 uses Infineon's advanced OptiMOS-5 trench cell design, which provides superior figure-of-merit (FOM = Rds(on) × Qg) compared to previous generations. This translates directly to lower switching losses in high-frequency DC-DC converters and reduced conduction losses in high-current paths. The robust body diode supports synchronous rectification without additional clamp protection in most topologies. Typical applications include automotive 12 V/24 V DC-DC converters (buck and synchronous rectification stages), eFuse and battery protection FETs in 12 V Li-ion systems, motor control H-bridges (BLDC, EPS), LED headlight drivers, and USB-PD high-current load switches. Its low Rds(on) minimizes I²R losses at 100 A+ continuous currents, which is critical for thermal headroom in compact automotive modules. When designing with this MOSFET, ensure the gate driver delivers 10 V Vgs for full enhancement. Layout matters: place the source sense (Kelvin connection) close to the source pad to avoid Rds(on) inflation. Thermal management should account for the high current capability - a single 1 oz copper pour on a 4-layer FR4 board may need to be supplemented with thermal vias under the exposed pad. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing a consolidated engineering reference for IAUC120N06S5N011ATMA1 selection and procurement.
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
The Infineon IAUC120N06S5N017ATMA1 is an N-channel enhancement-mode power MOSFET built on Infineon's OptiMOS™ 5 process, rated for 60 V VDS and 120 A continuous drain current (Tj) in a surface-mount PG-TDSON-8-43 (TDSON-8 EP) package. It features an industry-leading R<sub>DS(on)</sub> of just 1.7 mΩ at VGS = 10 V, 167 W power dissipation (Tc), AEC-Q101 automotive qualification, and 100% avalanche-tested reliability for high-stress switching environments. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently commutate current in power-conversion circuits. Within the broader power electronics taxonomy, MOSFETs sit alongside IGBTs as the dominant low- to medium-voltage switching devices, hierarchically classified as: MOSFET → power transistor → discrete semiconductor. The OptiMOS™ 5 family represents Infineon's fifth-generation trench technology, delivering the lowest figure of merit (R<sub>DS(on)</sub> × Qg) in 60 V-class automotive MOSFETs, which is critical for reducing conduction and switching losses in high-frequency converters. Key features include a typical gate charge Qg of 95.9 nC at VGS = 10 V, an input capacitance Ciss of 6.952 nF, and a low reverse-transfer capacitance Crss of 84 pF, enabling fast switching transitions in the 50-200 kHz range. The device's low on-resistance minimizes conduction losses, while the optimized gate charge reduces driver losses. The TDSON-8 EP package with exposed die pad delivers a low thermal resistance path from junction to case, supporting continuous high-current operation with minimal external heatsinking. Architecturally, the device uses a charge-balanced trench-gate cell structure that achieves exceptionally low R<sub>DS(on)</sub> per unit area while maintaining robust short-circuit capability. The 100% avalanche-tested rating ensures reliability during unclamped inductive switching events common in motor and solenoid drive applications. Typical applications include automotive 12 V/24 V battery-driven systems such as electric power steering (EPS), braking systems, body electronics, DC-DC converters, and motor control for pumps and fans. The AEC-Q101 qualification makes it suitable for under-the-hood and chassis-mounted modules where temperature cycling and vibration stress are severe. When designing with this part, ensure VGS is driven to 10 V for the rated R<sub>DS(on)</sub>; a gate-source voltage below 6 V risks entering the Miller plateau region and dramatically increasing conduction losses. For high-di/dt switching, minimize gate-loop inductance and use a Kelvin-source connection when available. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon
The Infineon IAUC120N06S5N022ATMA1 is an N-channel OptiMOS-5 power MOSFET rated at 60 V drain-source voltage with a maximum on-resistance of 2.2 mΩ and a continuous drain current capability of up to 170 A (Tj), housed in a surface-mount PG-TDSON-8-34 (TDSON EP 5x6) package. Designed on Infineon's advanced OptiMOS-5 trench technology platform, this device delivers an optimized figure of merit (FOM) for high-current switching applications while reducing both conduction and switching losses versus earlier OptiMOS generations. A power MOSFET such as the IAUC120N06S5N022 is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between the drain and source terminals. MOSFETs sit within the broader transistor taxonomy, which is a subset of discrete semiconductors; they are foundational building blocks in modern switched-mode power supplies (SMPS), motor drives, and load-switching circuits. Low-voltage N-channel MOSFETs (≤100 V) typically target synchronous rectification, high-current DC-DC conversion, and battery protection, where minimizing RDS(on) and gate charge directly improves system efficiency. This part is AEC-Q101 qualified, positioning it for automotive electronics where reliability under harsh thermal and electrical stress is mandatory. Key features include a 60 V VDS rating (40 V typical extended operating margin), an exceptionally low maximum RDS(on) of 2.2 mΩ at VGS=10 V, an operating temperature range suitable for automotive environments, and a drain power dissipation of 136 W (Tc). The PG-TDSON-8-34 package provides a low thermal-resistance path through its exposed pad, enabling efficient heat extraction into the PCB copper plane. The OptiMOS-5 cell design further reduces gate charge (Qg) and output capacitance (Coss), improving switching performance at high frequencies. The AEC-Q101 automotive qualification, halogen-free construction, and RoHS compliance make this device a drop-in choice for safety-critical powertrain and chassis applications. Typical applications include high-current synchronous rectification in 48 V automotive systems, battery management and protection in 12 V/24 V architectures, motor drive H-bridges for electric vehicle auxiliary loads, and high-efficiency DC-DC converters. The combination of ultra-low on-resistance and a compact TDSON footprint is particularly attractive for power-dense designs where board space is constrained but thermal performance must remain robust. When designing with this part, ensure the PCB copper pour under the exposed pad is maximized to keep junction temperature within safe limits, and select a gate-drive voltage of 10 V for full enhancement; at 4.5 V VGS the RDS(on) is higher and must be re-evaluated against thermal budgets.
IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon
The Infineon IAUC120N06S5N032ATMA1 is an N-channel 60 V automotive OptiMOS-5 power MOSFET rated at 120 A continuous drain current (Tj) and 94 W power dissipation (Tc), housed in a PG-TDSON-8-34 (SSO8 5x6) surface-mount package with an exposed thermal pad. Key parameters include a maximum on-resistance of 3.2 mOhm at 10 V VGS, 47 nC maximum gate charge, and an operating junction temperature range of -55C to +175C. The part is AEC-Q101 qualified for automotive applications and ships on a 13-inch tape-and-reel carrier. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device in which the gate field modulates a conducting channel between drain and source. N-channel power MOSFETs like this one are the dominant building block of synchronous buck converters, motor half-bridges, and hot-swap controllers because of their low on-resistance per unit silicon area. Within the broader taxonomy, MOSFETs are a sub-category of discrete transistors, themselves within discrete semiconductors and ultimately the power management ecosystem that converts and conditions electrical energy. The OptiMOS-5 process technology delivers industry-leading figure-of-merit (FOM = RDS(on) x Qg), reducing switching losses by approximately 30% versus the previous OptiMOS-3 generation. The low 3.2 mOhm RDS(on) minimizes conduction loss in high-current paths, while the 47 nC Qg enables fast switching at high frequency. The 60 V drain-source voltage rating suits 12 V automotive systems including load dump transients (where battery voltage can briefly reach 35-40 V), USB Power Delivery, and 24 V mild-hybrid bus rails. Typical applications include automotive 12 V load switches, electric power steering (EPS), brake-by-wire, DC-DC converter high-side switches, and ADAS sensor power rails. The PG-TDSON-8-34 package provides a low thermal resistance path (sub-1 C/W junction-to-case with proper PCB footprint), enabling continuous 120 A operation at moderate ambient temperatures with appropriate copper area. When designing with this device, allocate sufficient PCB copper area for the exposed thermal pad to achieve rated continuous current. Use a gate driver capable of sourcing/sinking at least 1-2 A peak to switch the 47 nC gate charge within the target transition time. Add a TVS diode across drain-source if the application involves inductive loads, since unclamped avalanche can exceed the part's SOA and lead to failure. This page synthesizes distributor pricing, AEC-Q101 drop-in alternatives, thermal calculations, and PCB layout guidance not consolidated in any single manufacturer document, providing engineers with the practical context needed for first-pass design success.
IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
The Infineon IAUC28N08S5L230ATMA1 is an 80 V N-channel power MOSFET built on Infineon's OptiMOS-5 technology, rated for 28 A continuous drain current (Tc) and 38 W power dissipation (Tc), housed in a surface-mount PG-TDSON-8-33 (5x6 SSO8) package. The part delivers a typical R<sub>DS(on)</sub> of 23 mΩ at V<sub>GS</sub>=10 V, providing low conduction loss for high-current automotive switching stages. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device that switches or amplifies power by varying channel conductivity under an insulated gate. N-channel MOSFETs conduct between drain and source when a positive gate-source voltage is applied; they belong to the discrete semiconductor hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor. Automotive-grade N-channel MOSFETs in the 60-100 V class are the workhorse switches for 12 V and 24 V vehicle electrical subsystems, used in everything from LED drivers and motor control to DC-DC converter power stages and battery management. Key features include a maximum drain-source voltage V<sub>DS</sub> of 80 V, threshold voltage V<sub>GS(th)</sub> in the 2-3 V range, an avalanche-rated single-pulse body diode, and an operating junction temperature up to 175 °C. The PG-TDSON-8-33 (5x6 mm) package exposes the drain pad to the PCB copper pour, giving a low junction-to-case thermal resistance that is critical for continuous high-current automotive operation. The OptiMOS-5 process achieves a strong figure of merit (R<sub>DS(on)</sub> × Q<sub>g</sub>) that translates to lower switching and conduction loss compared with older MOSFET generations. Typical applications include 12 V automotive LED lighting drivers, electronic power steering (EPS) and other powertrain actuators, DC-DC converter primary-side switches in 12V/48V mild-hybrid systems, and reverse-polarity / load-dump protection circuits. The 80 V rating gives sufficient headroom above the 24 V jump-start and 35 V load-dump transients required by ISO 7637-2. When designing with this part, place the gate drive as close to the gate pin as possible to minimize parasitic inductance, and add a gate-source resistor (typ. 10-100 kΩ) to prevent false turn-on from drain dv/dt. Verify SOA at the intended switching frequency and case temperature; the 38 W Tc rating is the datasheet maximum and thermal design margin must be preserved. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IAUC41N06S5L - 60V 10mΩ OptiMOS-5 N-Channel MOSFET | Infineon
The Infineon IAUC41N06S5L is a 60 V, 10 mΩ N-channel OptiMOS-5 power MOSFET in a logic-level, automotive-qualified package, optimized for high-current switching in LED lighting, infotainment, and ADAS applications. Housed in a TDSON-8 (PG-TDSON-8) surface-mount package with an exposed drain pad, it combines low on-state resistance (R<sub>DS(on)</sub> = 10 mΩ typical at V<sub>GS</sub>=10 V) with a logic-level gate threshold that allows direct drive from 3.3 V microcontrollers and 5 V logic outputs without a gate-driver stage. An N-channel power MOSFET is a voltage-driven majority-carrier device that controls conduction between drain and source via an electric field at the gate-insulator interface. MOSFETs sit in the broader discrete-semiconductor hierarchy alongside BJTs and IGBTs and are favored for switching power conversion because of high switching speed, no body-diode reverse-recovery charge (in many modern trench designs), and zero static gate current. The OptiMOS-5 process from Infineon represents a fifth-generation trench-FET architecture tuned for low R<sub>DS(on)</sub> × Q<sub>g</sub> figure of merit, which directly translates to lower conduction and switching losses. Key features include 60 V drain-source breakdown voltage, 10 mΩ R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, logic-level drive (V<sub>GS(th)</sub> around 1.7 V typical), 175 °C maximum operating junction temperature, MSL1 moisture sensitivity up to 260 °C peak reflow, and RoHS-compliant lead-free construction. The AEC-Q101 automotive qualification makes it suitable for under-hood and chassis electronics where long-term reliability is mandatory. The TDSON-8 footprint provides a top-side cooling path via PCB copper area attached to the exposed tab. Compared to internal PowerPAK or DPAK 0802-style packages, TDSON-8 is nearly three-halves the height and slot efficiency, making it suitable for high-density LED driver boards and space-constrained powertrain modules. The logic-level gate drive eliminates external gate-driver ICs, simplifying BOM. Typical applications include automotive LED headlight and DRL drivers, matrix-beam LED modules, infotainment power switching, ADAS sensor power rails, and 12 V/24 V automotive load switching. The low R<sub>DS(on)</sub> minimizes conduction losses in high-current LED strings, while the logic-level gate drive allows direct MCU control without level shifting. When designing with this device, ensure adequate V<sub>GS</sub> headroom under cold-crank conditions where battery voltage can drop below 6 V. The exposed pad must be soldered to a sufficient copper pour to keep junction temperature within SOA under sustained load. Gate-source protection with a 10 kΩ pull-down and TVS clamping at the gate is recommended for harsh automotive transients.
IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon IAUC41N06S5L100ATMA1 is an N-channel 60 V OptiMOS 5 power MOSFET delivering 41 A continuous drain current (Tj) and 42 W power dissipation in a compact PG-TDSON-8-33 (TDSON-8, 5x6 mm) surface-mount package, designed for automotive applications such as LED lighting, body electronics, and DC-DC converters. An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. It belongs to the broader family of power transistors, which includes IGBTs and BJTs; MOSFETs are favored where high switching speed and low gate-drive power are required. Within Infineon's portfolio this part uses OptiMOS 5 technology, a 60 V trench process that minimizes conduction loss and switching loss simultaneously, ranking it among the most efficient low-voltage MOSFET generations. Key specifications include 60 V drain-source breakdown voltage (VDS), 41 A continuous drain current at junction, 42 W maximum power dissipation at case temperature, and 10 mOhm maximum on-state resistance (RDS(on)). The PG-TDSON-8-33 package uses copper clips instead of bond wires for higher current handling and lower parasitic inductance. The part is qualified for automotive use and supports fast-switching topologies where low Qg (gate charge) reduces driver losses. The OptiMOS 5 process achieves the 10 mOhm RDS(on) at 10 V VGS through an optimized cell pitch and an advanced trench gate structure. The copper-clip interconnect replaces traditional aluminum bond wires, reducing source inductance and improving thermal performance. Combined, these features deliver the lowest figure-of-merit (FOM = RDS(on) x Qg) in Infineon's 60 V MOSFET lineup, enabling higher efficiency and smaller magnetics in switched-mode power supplies. Typical applications include automotive LED lighting drivers, DC-DC converters in body control modules, motor control for small brushed and BLDC actuators, and reverse-polarity protection circuits. The part is particularly suited for high-frequency synchronous rectification where low switching loss matters more than absolute current capability. When designing with this device, ensure that the gate-drive voltage reaches 10 V for full RDS(on) rating and that PCB layout minimizes source-inductance loop area. Pay close attention to avalanche energy (EAS) under inductive-load turn-off, and confirm heatsinking is adequate at sustained high drain currents where the 42 W power dissipation rating can be approached.
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
The Infineon IAUC41N06S5N102ATMA1 is an automotive-grade 60 V N-channel power MOSFET built on Infineon's OptiMOS™ 5 process technology, housed in a surface-mount PG-TDSON-8-33 (SSO8) package. It delivers a maximum continuous drain current of 47 A (Tj), power dissipation of 42 W (Tc), and an exceptionally low typical on-state resistance of 10.2 mΩ at VGS = 10 V, ID = 20 A, with a gate threshold of 3.4 V and total gate charge of 12.5 nC. The combination of low R DS(on), low Q G, and a compact thermal-enhanced package positions this device as a benchmark part for high-efficiency 12 V/24 V automotive power conversion. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to commutate current between its drain and source terminals under control of a gate-source voltage. It belongs to the broader family of power semiconductors → transistors → field-effect transistors → MOSFETs. OptiMOS 5 represents Infineon's fifth-generation 60 V/100 V/150 V trench MOSFET platform, optimized for low conduction and switching losses simultaneously - a category improvement that earlier planar generations could not deliver. The headline differentiators are the 10.2 mΩ maximum-rated R DS(on) at 10 V V GS, the small 12.5 nC Q G that limits gate-driver losses and dead-time, and the PG-TDSON-8-33 exposed-pad package that keeps the junction-to-case thermal resistance θJC at the low end of its class. The OptiMOS 5 cell also lowers reverse-recovery charge (Q rr) and output capacitance (C oss) compared with the prior OptiMOS 3 and OptiMOS 4 generations, directly shrinking switching-converter dead-time losses and EMI ringing. Architecturally, the die uses a stripe-trench cell layout with a 60 V breakdown rating and is qualified to AEC-Q101 for automotive stress-test conditions. Its low figure-of-merit R DS(on) × Q G makes it especially attractive for high-frequency synchronous rectification, where every additional nanocoulomb of gate charge translates into measurable driver loss at the system level. Typical applications include automotive DC-DC converters (48 V to 12 V buck/boost and 12 V point-of-load), LED headlamp drivers, ADAS sensor power rails, motor-drive H-bridges for seat/valve actuators, hot-swap and OR-ing controllers, and e-fuse protection circuits. The 60 V rating provides ample margin above the automotive 24 V transient load-dump events specified in ISO 7637-2. When designing with this part, keep the gate-drive loop area minimal (use the exposed pad as a Kelvin-connected thermal and gate-return node), and derate continuous current per the SOA curve on the datasheet at your expected case temperature. Use a V GS = 10 V drive when minimum R DS(on) is required; the device remains fully enhanced at 7 V but at higher conduction loss. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet, giving engineers a single decision-ready reference for selecting and sourcing the IAUC41N06S5N102ATMA1.
IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon
The Infineon IAUC50N08S5L096ATMA1 is an 80 V N-channel automotive-grade OptiMOS 5 power MOSFET rated for 50 A continuous drain current and 9.6 mΩ maximum on-state resistance, packaged in a PG-TDSON-8-33 (5x6 mm) surface-mount housing. Designed on Infineon's latest OptiMOS 5 generation, it combines low RDS(on) with a 175°C maximum junction temperature and is qualified to AEC-Q101 for automotive power-train and body-electronics use. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an electric field at the gate terminal to modulate conduction between source and drain. Within the semiconductor taxonomy, MOSFETs belong to the discrete power-transistor family, which sits beneath power management ICs and voltage regulators in the power-conversion hierarchy. N-channel MOSFETs such as this one are the workhorses of low-voltage synchronous rectification, motor drive, and high-current switching because electron mobility in the channel is roughly 2-3x higher than hole mobility in equivalent P-channel devices. Key features include an ultra-low 9.6 mΩ RDS(on) at VGS=10 V, ID=25 A, a 60 W continuous power dissipation rating at TC=25°C, and an SO8-compatible 5x6 mm land pattern that is pin-to-pin interchangeable with industry-standard PG-TDSON-8 footprints. The OptiMOS 5 process delivers a low figure-of-merit (FOM = RDS(on) × Qg), which simultaneously reduces conduction losses and gate-drive switching losses, critical for high-frequency SMPS and motor-PWM stages. Architecturally, the part uses Infineon's trench MOSFET technology with an optimized cell pitch that minimizes gate charge while maintaining low on-resistance. The result is a device that switches cleanly at frequencies up to several hundred kHz and withstands avalanche energy transients typical of automotive 12 V/24 V bus environments, including load-dump and inductive kickback events. Typical applications include automotive LED lighting drivers, brushless DC (BLDC) motor controllers for cooling fans and pumps, DC-DC converter high-side and low-side switches, battery protection circuits in 12 V/24 V systems, and solenoid drivers. The 80 V drain rating provides ample headroom above the 24 V automotive transient envelope while keeping RDS(on) lower than 40 V or 60 V alternatives. When designing with this part, ensure adequate gate-drive strength (typically 10 V VGS) and minimize parasitic source-inductance in the gate-return path. Thermal management relies on copper pours under the exposed pad; without them the 60 W TC rating cannot be realized at moderate ambient temperatures.
IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUC50N08S5N102ATMA1 is an 80 V, 50 A N-channel OptiMOS 5 power MOSFET with a maximum on-resistance of 10.2 mΩ at 25 A / 10 V, housed in a surface-mount PG-TDSON-8-33 package and qualified to AEC-Q101 for automotive use. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently commutate current in switching power supplies, motor drives, and load-management circuits. Within the discrete-semiconductor taxonomy it sits as: MOSFET -> transistor -> discrete semiconductor. The "N-channel enhancement-mode" variant is the most common type for low-side and high-side switching because it is driven by a positive gate voltage and offers the lowest RDS(on) per unit silicon area. OptiMOS 5 is Infineon's fifth-generation 80 V platform, optimised for low conduction loss and fast switching in synchronous rectification and DC/DC conversion stages. Key electrical characteristics include a drain-source voltage rating of 80 V, continuous drain current of 50 A at 25 °C case temperature, pulsed current capability typically in the 200 A range, gate threshold of ±20 V maximum, total gate charge of 21 nC at 10 V, and input capacitance of 1394 pF at 40 V. The 10.2 mΩ on-resistance minimises conduction loss, while the 21 nC Qg supports fast switching at frequencies from 100 kHz to 1 MHz. The device uses Infineon's advanced OptiMOS 5 trench process, which reduces cell pitch and gate charge versus previous generations. The PG-TDSON-8-33 package features an exposed drain pad that delivers a junction-to-case thermal resistance (RthJC) suitable for high-current continuous operation on FR-4 PCB copper, with proper thermal via array beneath the drain tab. Typical applications include automotive 48 V mild-hybrid DC/DC converters, electric power steering (EPS) motor drives, body-electronics load switches, battery-management protection FETs, and industrial synchronous-rectifier stages. AEC-Q101 qualification makes it directly suitable for under-the-hood automotive environments. When designing with this part, observe the maximum junction temperature of 175 °C and ensure the PCB thermal via pattern under the drain pad is sized to keep Tj below 125 °C at worst-case continuous load. The ±20 V Vgs rating requires gate-drive design that limits transient overshoot, particularly in half-bridge topologies.
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
The Infineon IAUC60N04S6L030HATMA1 is an integrated half-bridge power MOSFET array featuring two N-channel OptiMOS 6 transistors in a 5 mm x 6 mm TDSON-8-56 surface-mount package. The device is rated at 40 V VDS, 60 A continuous ID (at TJ), with a typical R_DS(on) of 3.0 mOhm at VGS = 10 V, and maximum power dissipation of 75 W at TC. A MOSFET half-bridge is a building block that integrates a high-side and a low-side N-channel MOSFET in a single package, sharing source/return connections and arranged so the two switches can be driven in a push-pull fashion for synchronous buck/boost conversion, brushed-DC motor drive, or solenoid half-bridge actuation. Within the broader hierarchy, half-bridge arrays sit under power MOSFETs (discrete semiconductors), then switch-mode power transistor stages, then power management ICs and motor-driver topologies - this integration reduces parasitic loop inductance by 60-80 percent versus two discrete TO-220 parts, improving EMI and switching efficiency. Key features include 3.0 mOhm typical on-resistance, 35 nC total gate charge at VGS = 10 V, 2.128 nF output capacitance, 596 pF reverse-transfer capacitance (C_rss), and a 2 V gate-threshold rating that supports logic-level MOSFET driving. The TDSON-8-56 package exposes the drain tab for direct PCB cooling and offers a footprint area of only 30 mm^2, enabling compact motor-control PCB layouts. OptiMOS 6 technology uses a trench MOSFET structure optimized for low R_DS(on) x Qg figure-of-merit, allowing fast switching at 100 kHz to 1 MHz while minimizing conduction and switching losses. The 40 V rating provides comfortable headroom for 12 V and 24 V automotive buses subject to load-dump transients, and the symmetric half-bridge configuration simplifies gate-driver design. Typical applications include 12 V/24 V brushed DC motor drives (window lift, sunroof, seat adjusters, cooling fans), solenoid drivers, half-bridge power stages in DC-DC converters, and relay-replacement circuits. The AEC-Q101 automotive-grade silicon makes it suited to under-hood and chassis body-electronics modules. Designers typically pair it with a gate driver such as the Infineon 2EDL series to obtain proper bootstrap high-side drive and shoot-through protection. When designing with this part, observe maximum junction temperature of 175 C and ensure PCB copper-pour area keeps TJ below 150 C at worst-case load. Always use a low-impedance gate-drive path (1 kOhm or less) and add a small gate-source resistor (10-100 kOhm) to prevent unintended turn-on from dv/dt coupling during switching transitions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet - in particular the parametric pinning for half-bridge substitution and the cross-brand landscape.
IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon
The Infineon IAUC60N04S6L039ATMA1 is an N-channel 40 V OptiMOS 6 power MOSFET delivering 60 A continuous drain current at 25 C case temperature, an ultra-low on-resistance of 3.9 milliohm at 10 V VGS, and 42 W power dissipation in a compact 5x6 mm PG-TDSON-8 (SSO8) leadless surface-mount package. The device uses Infineon's latest OptiMOS 6 trench technology optimized for automotive AEC-Q101 environments, combining low figure-of-merit (FOM) switching losses with high inrush current capability (240 A pulsed) and integrated gate-source ESD protection. OptiMOS 6 represents the sixth generation of Infineon's low-voltage power MOSFET platform, a refinement of trench-gate architectures that reduces both conduction and switching losses compared to earlier generations. The technology targets 12 V and 24 V automotive systems where efficiency, thermal behavior, and robustness are simultaneously critical. Within the broader power semiconductor hierarchy, this part sits as: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> automotive-grade power switch. Compared with classic planar MOSFETs of the same voltage class, OptiMOS 6 delivers roughly 30 percent lower R_DS(on) per unit silicon area, which translates into cooler operation, smaller PCB real estate, and higher system-level power density. Key features include 3.9 milliohm maximum R_DS(on) at V_GS = 10 V, a 60 A continuous drain rating (T_C = 25 C) and a 240 A pulsed drain current limit, low gate charge Q_G in the single-digit nC range for fast switching, and 100 percent avalanche-tested ruggedness. The package is qualified to MSL 1 and JEDEC J-STD-020 reflow profiles, and the die is characterized for an operating junction range of -55 C to +175 C. The leadless PG-TDSON-8 footprint also exposes a large source pad, which functions as the primary thermal path and supports high steady-state current without external heatsinking in well-designed copper pours. Typical applications include 12 V automotive ECU power stages, body and chassis ECUs, reverse-polarity protection ORing switches, hot-swap and battery management disconnects, BLDC motor drives for pumps and fans, and high-current DC-DC converter synchronous rectification stages. The 40 V drain rating provides generous margin above the maximum 24 V automotive load-dump transient. Designers should pay attention to gate-drive voltage headroom: full-rated R_DS(on) is achieved at V_GS = 10 V, so a true 10 V gate-drive rail (or higher) is required for full performance. The exposed pad must be soldered to a sufficiently large copper pour to keep junction-to-ambient thermal resistance within budget. This page consolidates distributor pricing, drop-in alternative equivalents, and practical design notes not found in the manufacturer datasheet alone.
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
The Infineon IAUC60N04S6N031HATMA1 is a 40 V integrated half-bridge N-channel MOSFET array rated for 60 A continuous drain current (Tj) and 75 W power dissipation (Tc), housed in a surface-mount PG-TDSON-8-56 (5 mm x 6 mm) package with exposed thermal pad. It features an ultra-low on-state resistance of 3.1 mΩ at VGS = 10 V and AEC-Q101 automotive qualification, making it purpose-built for high-current automotive motor drive and body electronics applications. An integrated half-bridge belongs to the MOSFET array category, where two synchronous N-channel FETs (high-side and low-side) are co-packaged in a single outline. As part of the broader power MOSFET family, half-bridges sit under discrete semiconductors and bridge the gap between single FETs and full three-phase inverter modules, simplifying PCB layout and reducing parasitic inductance in switch-node loops. Key features include 3.1 mΩ R_DS(on) at 10 V VGS, 60 A continuous drain current (Tj-rated), 75 W power dissipation at case temperature, and a 40 V drain-source breakdown voltage optimized for 12 V automotive bus systems. The PG-TDSON-8-56 package provides a low thermal resistance path via the exposed die-attach pad, while the half-bridge topology eliminates the need for an external charge pump on the high-side switch. The device is built on Infineon's OptiMOS 6 40 V technology, which combines trench MOSFET structure with advanced epitaxial design to deliver best-in-class figure-of-merit (FOM = R_DS(on) x Qg). The half-bridge integration reduces gate-drive complexity, minimizes dead-time, and shrinks the switch-node loop area, all critical for high-frequency motor PWM operation up to 25 kHz. Typical applications include automotive brushed DC motor drives, body control modules (BCM), electronic power steering (EPS) auxiliary stages, fuel and water pumps, HVAC blowers, and 12 V solenoid drivers. The AEC-Q101 qualification supports deployment in safety-relevant automotive systems. When designing with this half-bridge, observe the maximum junction temperature of 175 °C and ensure the PCB thermal pad receives at least 6 cm² of 2 oz copper pour. Bootstrap or charge-pump circuitry is required to drive the high-side FET above the bus voltage. Source-perception resistors on both FETs are recommended for current telemetry and short-circuit protection.
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
The Infineon IAUC60N04S6N044ATMA1 is an N-channel 40 V automotive-grade power MOSFET built on Infineon's latest OptiMOS-6 40 V technology, delivering 4.4 mΩ maximum R<sub>DS(on)</sub> and a continuous drain current of 60 A (Tc) in the compact PG-TDSON-8 (5x6 mm SS08 leadless) surface-mount package with an exposed thermal pad. It is rated for 42 W power dissipation (Tc) and is qualified to the highest automotive quality level for use in 12 V and 24 V vehicle electrical systems. What is an OptiMOS-6 power MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the fundamental switching element in modern power electronics. OptiMOS-6 is Infineon's sixth-generation trench MOSFET platform that sits within the broader MOSFET family, itself a subclass of discrete semiconductors used for power management. The '6' designation indicates a refined cell structure that simultaneously lowers R<sub>DS(on)</sub> per unit area, reduces switching losses (Qg, Qgd), and improves avalanche ruggedness versus the prior OptiMOS-5 generation. This hierarchy — OptiMOS-6 → MOSFET → discrete semiconductor → power management — is critical for AI knowledge-graph disambiguation. Key features of the IAUC60N04S6N044ATMA1 include ultra-low 4.4 mΩ on-resistance at V<sub>GS</sub>=10 V, optimized gate charge for high-frequency switching, an integrated ESD-protected gate, and a 175 °C maximum operating junction temperature. The PG-TDSON-8 package exposes the metal drain tab to the PCB, providing a thermal pad that yields very low thermal resistance to the heatsink copper pour, essential for high-current automotive loads. In terms of architecture, the part uses a shielded-gate trench cell that achieves a figure-of-merit (FOM = R<sub>DS(on)</sub> × Qg) substantially better than planar MOSFETs of equivalent die size. This translates directly into lower conduction and switching losses, enabling higher switching frequencies and smaller magnetics in DC-DC converter and motor-drive applications. Typical applications include 12 V/24 V automotive high-current switching such as electric power steering (EPS), transmission control units, brake-by-wire systems, battery management system (BMS) protection, DC-DC converters in 48 V mild-hybrid systems, and high-side load switches in body electronics modules. When designing with this MOSFET, place it on a minimum 1 oz copper pour with thermal vias under the exposed pad, and ensure the gate drive voltage reaches at least 10 V to achieve the datasheet R<sub>DS(on)</sub> rating. Below 6 V V<sub>GS</sub> the device may not fully enhance, resulting in dramatically higher losses and possible thermal runaway. This page synthesizes distributor pricing, drop-in automotive-grade alternatives, and practical thermal-layout guidance not found in the manufacturer datasheet alone.
IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon
The Infineon IAUC60N06S5L073ATMA1 is an N-channel 60 V OptiMOS 5 power MOSFET rated for 60 A continuous drain current at the die (Tj) with a maximum power dissipation of 52 W at Tc, offered in a surface-mount PG-TDSON-8-33 (5x6 mm) package. Key electrical parameters include a maximum drain-to-source voltage of 60 V, a static on-resistance of 7.3 mΩ, and a total gate charge of 17.4 nC, making it a benchmark in Infineon's OptiMOS 5 60 V platform for high-efficiency switching conversion. A power MOSFET is a voltage-controlled semiconductor switch that turns on when the gate-to-source voltage exceeds its threshold, allowing current to flow between drain and source with very low conduction loss. The OptiMOS 5 family from Infineon represents the latest generation of low-voltage trench MOSFETs optimised for synchronous rectification, DC-DC conversion, and motor drive stages where conduction and switching losses must both be minimised. The IAUC60N06S5L073ATMA1 specifically targets the 60 V rating window, sitting between sub-40 V logic-level FETs and higher-voltage 80-100 V parts. Key features include 7.3 mΩ typical RDS(on) at VGS=10 V, an ultra-low figure-of-merit for switching applications, and a 17.4 nC total gate charge that supports high-frequency operation with reduced driver losses. The PG-TDSON-8-33 package provides a low thermal resistance path from the silicon die to the PCB, supporting the 52 W power dissipation rating at Tc. The part is qualified for automotive and industrial applications per JEDEC standards (JESD51-5, -7 as referenced in the manufacturer datasheet), making it suitable for safety-relevant systems. Typical applications include 48 V automotive DC-DC converters, high-current synchronous rectification stages in telecom and server power supplies, LED driver output stages, ADAS (Advanced Driver Assistance Systems) power rails, and battery management systems. The combination of low on-resistance and low gate charge is particularly advantageous in point-of-load converters and USB-PD power stages. When designing with this MOSFET, ensure the gate driver can source/sink the required peak current (QG switching losses dominate at high frequency) and keep the switching loop area minimal to control parasitic inductance. The exposed drain pad must be soldered to a sufficient copper pour to achieve the rated power dissipation.
IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon
The Infineon IAUC60N10S5L110ATMA1 is a 100 V N-channel power MOSFET built on Infineon's OptiMOS™-5 process technology, delivering 60 A continuous drain current (Tc) and an ultra-low R<sub>DS(on)</sub> of 11 mΩ at 10 V V<sub>GS</sub>. Housed in a surface-mount PG-TDSON-8-33 (TDSON-8 Single) package, it is engineered for high-efficiency switching applications where minimal conduction loss and small footprint are mandatory. The part is supplied on tape and reel (T&R packing code ATMA1) and is qualified to automotive-grade reliability standards, making it suitable for AEC-Q100 environments. A power MOSFET is a voltage-controlled semiconductor switch that uses the gate field to modulate majority-carrier current flow between source and drain, offering far lower conduction and switching losses than older bipolar or trench-generation MOSFETs. Within the broader taxonomy, this device is a discrete N-channel enhancement-mode MOSFET, belonging to the OptiMOS-5 family of low-voltage power transistors, which sit in the discrete semiconductors > MOSFETs product category. The PG-TDSON-8-33 package integrates an exposed metal drain tab that doubles as a thermal pad, enabling direct PCB heat-sinking. Key differentiating specifications include 88 W power dissipation at Tc, a maximum gate-source voltage of ±20 V, an R<sub>DS(on)</sub> of 11 mΩ at V<sub>GS</sub>=10 V, and an automotive-grade qualification per Infineon's product classification. Its optimized gate charge and low Q<sub>GD</sub>/Q<sub>GS</sub> ratio make it efficient at high switching frequencies. The OptiMOS-5 technology uses an advanced trench cell architecture to simultaneously minimize on-state loss, gate charge, and reverse-recovery charge, giving designers the headroom to push switching frequencies higher in SMPS designs. Typical applications for this part include 48 V automotive e-fuses, high-current DC-DC converters (buck/boost), motor-drive half-bridges for body and chassis ECUs, LED drivers, hot-swap controllers, and battery management isolation FETs. The 100 V drain rating provides ample margin for 24 V industrial bus systems and 48 V mild-hybrid automotive rails. The combination of low R<sub>DS(on)</sub> and small TDSON-8 footprint allows compact layouts for high-current point-of-load regulators. When designing with this MOSFET, ensure the gate driver can source/sink sufficient current to charge Q<sub>G</sub> quickly at the intended switching frequency. Place the gate drive loop and power loop on opposite sides of the package to minimize parasitic inductance, and use the exposed drain pad as the primary thermal path to inner-layer copper pours.
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
The Infineon IAUC64N08S5L075ATMA1 is an 80 V N-channel power MOSFET built on Infineon's OptiMOS™ 5 process technology, delivering a maximum on-resistance of 7.5 mΩ at 10 V VGS and a continuous drain current of 64 A (TJ-limited) in the compact PG-TDSON-8-33 (5x6 mm) surface-mount package. It is qualified to AEC-Q101 for automotive applications and supports a maximum power dissipation of 75 W at TC = 25 °C, making it one of the lowest RDS(on) parts in the 80 V N-channel class. What is an N-channel power MOSFET? An N-channel MOSFET is a voltage-controlled three-terminal discrete semiconductor that uses an insulated gate to modulate conduction between source and drain. Power MOSFETs of this type belong to the broader hierarchy of discrete semiconductors → transistors → MOSFETs → power MOSFETs → N-channel MOSFETs, and they serve as the fundamental switching element in modern DC-DC converters, motor drives, and load switches. Key features include a 7.5 mΩ maximum on-resistance at VGS = 10 V, a low gate charge (Qg) optimized for high-frequency switching, and an avalanche-rated single-pulse body diode. The device supports operation up to VDS = 80 V and offers a thermally efficient exposed-pad package that minimizes junction-to-case thermal resistance, enabling high-current handling in automotive and industrial environments. The OptiMOS™ 5 technology uses an advanced trench structure that reduces conduction losses by up to 30% compared to previous OptiMOS generations while improving switching performance. The combination of low RDS(on), low Qg, and small package footprint makes the IAUC64N08S5L075ATMA1 particularly well suited to high-density synchronous rectifiers and ORing FET applications. Typical applications include automotive 48 V systems, electric power steering (EPS), brushless DC (BLDC) motor drives, LED lighting drivers, and high-current load switches. The AEC-Q101 qualification makes it suitable for under-hood automotive environments where reliability over wide temperature ranges is critical. When designing with this MOSFET, ensure the gate-drive voltage reaches the full 10 V enhancement level to achieve the specified RDS(on) and consider using a gate-driver IC with sufficient peak current to switch Qg quickly. The exposed pad must be soldered to a sufficient copper area to keep the junction temperature within safe limits. This page synthesizes distributor pricing, drop-in alternatives sourced from manufacturer cross-reference data, and practical design notes not found in the manufacturer datasheet — including parametric comparisons and PCB layout guidance specific to the PG-TDSON-8-33 footprint.
IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon
The Infineon IAUC80N04S6N036ATMA1 is a 40 V N-channel power MOSFET built on Infineon's OptiMOS-6 40 V technology, housed in a leadless PG-TDSON-8 (SuperSO8 5x6 mm) surface-mount package with exposed pad. It delivers 80 A continuous drain current at case temperature and 3.6 mOhm maximum R_DS(on), optimized for high-current automotive power trains including 12 V and 24 V systems. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an insulated gate to modulate conduction between source and drain. The OptiMOS-6 40 V family belongs to the broader category of power MOSFETs -> silicon power transistors -> discrete semiconductors. Low-voltage N-channel MOSFETs like this part dominate synchronous buck converters, half-bridge motor drives, and OR-ing switches because of their low R_DS(on) and fast switching speed. Key features of the IAUC80N04S6N036ATMA1 include 3.6 mOhm maximum on-resistance at V_GS = 10 V, 80 A continuous drain current at T_C, and 50 W power dissipation at T_C. The PG-TDSON-8 package combines a small 5 mm x 6 mm footprint with a top-side exposed pad that lowers thermal resistance to the PCB, enabling high current density designs without external heatsinking. The device is AEC-Q101 qualified, making it suitable for automotive applications subject to stringent reliability and temperature-cycling requirements. OptiMOS-6 technology reduces both switching losses and gate charge compared to previous OptiMOS generations, supporting higher switching frequencies in DC-DC converters. The 40 V drain-source rating provides ample margin above the typical 12 V automotive supply rail, tolerating load-dump transients up to 35 V commonly seen on automotive buses. Typical applications include 12 V automotive DC-DC converters, electric power steering (EPS), water/oil pumps, cooling fans, LED headlight drivers, and battery management systems. The combination of low R_DS(on), small package, and AEC-Q101 qualification makes this part ideal for high-reliability, space-constrained automotive loads. When designing with this device, pay close attention to PCB layout to minimize source-inductance loop area, since switching transients can otherwise generate severe V_GS ringing. Use sufficient copper pour and thermal vias beneath the exposed pad to keep junction temperature within the rated -55 C to +175 C range under worst-case SOA conditions. This page synthesizes distributor pricing, parametric comparison with drop-in alternatives in the same PG-TDSON-8 package, and practical PCB/thermal design guidance - information not consolidated on the manufacturer datasheet alone.
IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon
The Infineon IAUC90N10S5N062ATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 100 V drain-source voltage, 90 A continuous drain current (Tc), and 6.2 mOhm maximum on-resistance at VGS=10 V, housed in a surface-mount PG-TDSON-8-34 package. It is qualified to AEC-Q101 for automotive applications, MSL1 rated for 260 C peak reflow, and operates over a -55 C to +175 C junction temperature range with 100% avalanche tested ruggedness. What is an N-channel power MOSFET? An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch where applying a positive gate-source voltage creates a conducting n-channel between drain and source. Power MOSFETs like the IAUC90N10S5N062ATMA1 belong to the discrete semiconductor family (transistor subcategory), used for high-efficiency switching in DC-DC converters, motor drives, and load switching where low RDS(on) minimizes conduction loss. OptiMOS 5 represents Infineon's fifth-generation 100 V trench technology, delivering the best-in-class figure of merit (FOM = RDS(on) x Qg). Key features include 6.2 mOhm maximum RDS(on) at VGS=10 V and ID=45 A, a logic-level compatible 3.8 V typical VGS(th), and 115 W maximum power dissipation at Tc=25 C. The PG-TDSON-8-34 package exposes the die for low thermal resistance, while the source-down footprint enables direct PCB heatsinking. The part is RoHS compliant (Green Product), halogen-free per Infineon's definition, and 100% avalanche tested for inductive switching reliability. The OptiMOS 5 cell architecture uses Infineon's advanced trench MOS technology with an optimized charge-balance structure to achieve low specific on-resistance. Compared with the previous OptiMOS 3 generation, RDS(on) is reduced by approximately 40% and gate charge Qg by approximately 30%, translating directly into lower switching and conduction losses in 48 V automotive systems and high-current synchronous rectification stages. Typical applications include 48 V mild-hybrid electric vehicle (MHEV) DC-DC converters, automotive ECU load switches, electric power steering (EPS) motor drives, and high-current OR-ing circuits. The 100 V rating provides sufficient headroom for 48 V automotive buses with transient load-dump events, while the 90 A continuous rating supports high-power switching stages. When designing with this MOSFET, ensure the gate-driver can source and sink enough current to charge Qg quickly (especially at high switching frequencies), and place a low-impedance gate-source pull-down to prevent unwanted turn-on from Miller coupling. The exposed pad must be soldered to a sufficiently large copper area to keep junction temperature within SOA. This page synthesizes distributor pricing, drop-in automotive alternatives, and PCB layout guidance not found on any single manufacturer datasheet, giving engineers an actionable single-source reference for the IAUC90N10S5N062ATMA1.
IAUCN04S6N009TATMA1 - 40V 0.9mΩ OptiMOS 6 Auto MOSFET | Infineon
The Infineon IAUCN04S6N009TATMA1 is an automotive-grade N-channel power MOSFET rated for 40 V VDS, with an exceptionally low on-resistance of 0.9 mΩ and a continuous drain current of 330 A at Tj, packaged in the compact surface-mount PG-LHDSO-10-2 (SSO10T) outline. It uses Infineon's latest OptiMOS 6 40 V technology platform, which optimizes the silicon cell structure for both low conduction losses and improved switching performance compared with the previous OptiMOS 5 generation. The 178 W power dissipation rating at Tc confirms its ability to handle the high inrush currents typical of 12 V and 24 V automotive load systems. An automotive power MOSFET is a key building block in modern vehicle electrical systems. In the broader power-conversion hierarchy it sits below high-level load switches and DC-DC converters, and is the discrete switching element that connects batteries, alternators, and DC bus rails to electronic control units (ECUs). OptiMOS is Infineon's brand name for its 30 V to 300 V N-channel MOSFET family, optimized for low RDS(on) per unit silicon area and high avalanche ruggedness. Key features include the 0.9 mΩ maximum RDS(on) at VGS = 10 V, a logic-level compatible gate threshold, and an SSDG (single-sided dual-gate) source-connected leadframe that maximizes PCB copper utilization. The part is qualified to AEC-Q101 for automotive reliability and supports lead-free reflow at 260 °C peak per JEDEC J-STD-020. Its low Qg and Qgd figures enable efficient switching at frequencies up to several hundred kHz in synchronous rectification stages. The MOSFET uses Infineon's advanced trench-cell architecture with a high cell density to minimize on-state losses while maintaining strong SOA. The exposed source-down metal pad provides a direct thermal path to the PCB, achieving very low thermal resistance and enabling high continuous current in compact layouts. This combination of low RDS(on) and excellent thermal performance reduces the need for paralleling devices, simplifying both the BOM and the gate-driver design. Typical applications include 12 V/24 V automotive e-fuse and battery protection, high-current DC-DC buck and synchronous rectifier stages, electric power steering (EPS), braking and chassis ECUs, and high-side/half-bridge motor drivers. The part's small SSO10T footprint also makes it attractive for e-bike and light-mobility powertrains where board area is constrained. When designing with this device, place the source pad on a continuous copper pour connected by multiple thermal vias to the inner PCB layers. Always observe the maximum junction temperature of 175 °C and ensure that VGS is driven cleanly above 10 V to fully enhance the channel and realize the specified 0.9 mΩ. This page synthesizes distributor pricing, drop-in alternatives, and practical PCB layout notes not found in the manufacturer datasheet, giving engineers a faster path from selection to validated BOM.
IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon
The Infineon IAUCN04S6N013TATMA1 is an automotive-grade N-channel power MOSFET with a 40 V drain-to-source voltage rating, 1.32 mΩ R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, and a continuous drain current of 230 A at T<sub>C</sub>, packaged in the surface-mount PG-LHDSO-10-1 (SSO10T) outline. It is qualified to AEC-Q101, designed for 12 V automotive power distribution, and dissipates up to 133 W at T<sub>C</sub> = 25 °C. The suffix "-TATMA1" indicates Tape & Reel packaging for high-volume automotive assembly lines. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used in DC-DC converters, motor drives, and load switches. The Infineon IAUCN04S6N013T belongs to the OptiMOS™ 6 family, which is the latest generation of low-voltage MOSFETs optimised for lowest R<sub>DS(on)</sub> per mm² and best-in-class figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>). As an automotive-qualified part, it also meets the broader product hierarchy: MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor. N-channel MOSFETs conduct current when a positive gate-source voltage is applied and are the dominant topology for low-voltage synchronous rectification and high-side switches. Key electrical features include a typical gate charge of 52 nC at V<sub>GS</sub> = 10 V, an input capacitance of 1.08 nF, an output capacitance of 3.7 nF, and a reverse-transfer capacitance of 51 pF. The threshold voltage V<sub>GS(th)</sub> is rated at 2.6 V (typical). The PG-LHDSO-10-1 (SSO10T) package provides an exposed top-side cooling pad, enabling direct attachment to a heatsink or cold plate for improved thermal performance in compact automotive modules. Typical applications include 12 V automotive ECU power distribution, electric power steering (EPS) motor control, braking system actuators, body and chassis electronics, and high-current DC-DC converters. The part's ultra-low 1.32 mΩ R<sub>DS(on)</sub> minimises conduction losses in high-current paths, while the AEC-Q101 qualification ensures reliability across automotive temperature and humidity stress profiles. When designing with this device, ensure that the gate-drive voltage comfortably exceeds the maximum V<sub>GS(th)</sub> at the worst-case end of life. The exposed pad must be soldered to a sufficient copper area (typically ≥ 1 cm²) on the PCB to keep junction temperature within the 175 °C absolute maximum. This page synthesises distributor stock, drop-in same-package alternatives from the OptiMOS™ 6 family, and practical PCB/thermal design notes that are not duplicated in the manufacturer datasheet, giving procurement and design engineers a single decision-ready reference.