MOSFET
製品 (1294)
IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon
The Infineon IAUCN08S7N024ATMA1 is an 80 V N-channel automotive OptiMOS 7 power MOSFET rated at 165 A continuous drain current with an ultra-low 2.4 mΩ maximum on-resistance, housed in a surface-mount PG-TDSON-8-34 package. It is engineered for 48 V automotive systems, high-current DC-DC converters, and motor control where conduction losses dominate the thermal budget. What is an automotive-grade OptiMOS 7 power MOSFET? It is a N-channel enhancement-mode power transistor built on Infineon's latest 80 V OptiMOS 7 trench process, qualified to AEC-Q101 for automotive use. In the broader taxonomy it is a power MOSFET -> discrete semiconductor -> active component. The OptiMOS 7 family improves figure of merit (FOM = RDS(on) × Qg) versus prior OptiMOS generations, enabling lower switching and conduction losses in high-frequency power conversion. Key features include a maximum drain-source voltage VDS of 80 V, continuous drain current ID of 165 A at 25 °C case temperature, pulsed current handling suitable for inrush and short-circuit conditions, and a logic-level compatible gate drive. The PG-TDSON-8-34 package provides an exposed thermal pad (EP) for direct PCB heatsinking, minimizing thermal resistance from junction to board. The die uses Infineon's advanced trench MOSFET technology with low gate charge and low output capacitance, optimizing switching performance in high-frequency buck/boost topologies. The 2.4 mΩ RDS(on) specification is measured at VGS = 10 V, and the device maintains low RDS(on) across the automotive temperature range, ensuring predictable conduction loss in safety-critical applications. Typical applications include 48 V mild-hybrid electric vehicle (MHEV) DC-DC converters, electric power steering (EPS), braking systems, high-current BLDC motor drives, and automotive load switches. The 165 A rating supports high-power 48 V bus architectures used in modern zonal E/E platforms. When designing with this MOSFET, ensure the PCB layout provides sufficient copper pour area on the exposed pad for thermal dissipation. The gate drive should use a dedicated gate driver IC with sufficient source/sink current for fast switching transitions and minimized dead-time in bridge configurations. This page synthesizes distributor pricing, drop-in same-brand alternatives, and practical thermal guidance not consolidated on a single distributor product page.
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
The Infineon IAUCN08S7N024TATMA1 is an 80 V N-channel automotive power MOSFET from the OptiMOS™ 7 family, rated at 2.44 mΩ maximum on-resistance, 165 A continuous drain current (Tj) and 157 W power dissipation (Tc). It is housed in a top-side cooled SSO10T 5x7 mm² surface-mount package (PG-LHDSO-10-1) and is qualified to AEC-Q101 for automotive applications. An N-channel power MOSFET is a voltage-controlled three-terminal semiconductor switch that uses an insulated gate to modulate conduction between source and drain. Within the broader taxonomy, the IAUCN08S7N024TATMA1 belongs to the discrete semiconductors category, more specifically MOSFETs, then enhancement-mode N-channel MOSFETs, then the automotive-grade sub-family, and finally Infineon's OptiMOS™ 7 generation optimized for low Rds(on) and high current handling. It is intended for high-current 12 V and 24 V automotive power trains such as electric power steering, brake systems, and DC-DC converters. The IAUCN08S7N024TATMA1's headline specifications include 80 V drain-source breakdown voltage, 2.44 mΩ maximum Rds(on) at VGS=10 V, 165 A continuous drain current at junction temperature, and 157 W maximum power dissipation. The top-side cooled SSO10T package is engineered for direct PCB heat extraction to a heatsink or cold plate, dramatically reducing thermal resistance compared with bottom-cooled alternatives. The device is fully AEC-Q101 qualified and PPAP-capable for automotive OEM programs. Built on Infineon's advanced OptiMOS™ 7 trench technology, the device achieves industry-leading figure-of-merit (FOM = Rds(on) × Qg) for 80 V MOSFETs, reducing both conduction and switching losses. The top-side cooling SSO10T package removes heat directly through the source tab to an attached heatsink, freeing PCB bottom-side copper for high-current routing and enabling more compact inverter designs. Typical applications include automotive 12 V and 48 V high-current load switching, electric power steering (EPS) inverters, brake-by-wire motor drives, electric water/oil pumps, and high-power DC-DC converters in mild hybrid vehicles. The 80 V rating also provides comfortable transient margin on 12 V and 24 V automotive buses. When designing with this part, ensure the gate driver can source/sink at least 1 nC of Qg into the gate within the desired switching time. Use Kelvin-source connection if available to minimize gate-drive parasitic inductance, and follow Infineon's SSO10T layout guidelines for thermal via patterns and source-tab soldering. This page synthesizes Infineon datasheet specifications, AEC-Q101 automotive qualification status, SSO10T package thermal data, and cross-vendor drop-in equivalents not collected on a single manufacturer datasheet page.
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
The Infineon IAUCN08S7N034ATMA1 is an N-channel 80 V OptiMOS™ 7 automotive power MOSFET rated for 120 A continuous drain current and 3.4 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, housed in a surface-mount PG-TDSON-8-34 (TDSON EP) package with exposed pad. It is AEC-Q101 qualified and targets 12 V / 24 V automotive DC-DC converter, motor drive, and high-current load-switch applications where low conduction loss and small footprint are critical. An N-channel power MOSFET is a voltage-controlled semiconductor switch in which majority-carrier electron conduction (rather than minority-carrier transport) enables very fast switching and very low on-state resistance. MOSFETs belong to the discrete semiconductor family, sit within the broader power management hierarchy, and are the workhorse of switched-mode power supplies, synchronous rectifiers, and hot-swap circuits. The OptiMOS™ 7 process is Infineon's seventh-generation trench technology, which shrinks cell pitch to lower R<sub>DS(on)</sub> per unit area while reducing gate charge and improving switching loss. Key electrical characteristics include a drain-source breakdown voltage V<sub>(BR)DSS</sub> of 80 V, a continuous I<sub>D</sub> rating of 120 A at 25 °C case (much lower at 175 °C T<sub>J</sub>), a pulsed avalanche current rating, and typical gate charge Q<sub>G</sub> of 45.8 nC at V<sub>GS</sub>=10 V. The 3.4 mΩ R<sub>DS(on)</sub> produces 0.41 W conduction loss per ampere of drain current, while the 23 pF C<sub>iss</sub> and 3.115 nF C<sub>oss</sub> keep switching energy moderate for a 100 V class device. The PG-TDSON-8-34 (5 mm × 6 mm) package uses an exposed metal drain tab that doubles as the thermal pad, giving an R<sub>thJA</sub> suitable for 118 W power dissipation on a properly designed 1 oz copper FR-4 PCB. The package is lead-free, RoHS compliant, and rated MSL 1, simplifying automotive board assembly. Typical applications include 48 V mild-hybrid DC-DC converters, 12 V automotive buck/boost converters, electric power steering (EPS) half-bridges, HVAC blower and pump drivers, and battery disconnect switches in e-mobility. The AEC-Q101 grade-1 (-55 °C to +175 °C T<sub>J</sub>) qualification also makes it suitable for industrial high-current switching and telecom hot-swap controllers. When designing with this device, place the gate-drive loop as compact as possible (gate resistor, gate-source pull-down, and IC within 5 mm of the gate pad) to suppress ringing on the 80 V-rated gate oxide. Verify that V<sub>GS(th)</sub> stays above 3.2 V minimum across temperature to prevent parasitic turn-on in half-bridge configurations, and size the PCB copper flood under the exposed pad to keep junction temperature below 150 °C at worst-case steady-state load. This page synthesizes distributor pricing, verified automotive-grade drop-in alternatives, and PCB-level design notes not found in the manufacturer datasheet - useful for automotive power engineers evaluating 80 V MOSFET platforms.
IAUCN08S7N036TATMA1 - 80V, 3.6mΩ OptiMOS 7 Auto MOSFET | Infineon
The Infineon IAUCN08S7N036TATMA1 is an N-channel 80 V automotive-grade OptiMOS 7 power MOSFET with a maximum drain-source on-resistance of 3.60 mΩ and a continuous drain current of 129 A, housed in a top-side cooled PG-LHDSO-10-1 (SSO10T, 5x7 mm) surface-mount package. The suffix "ATMA1" indicates tape-and-reel packaging qualified to automotive standards. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source terminals when a positive gate-source voltage is applied. The OptiMOS 7 family represents Infineon's latest-generation automotive power MOSFET platform, optimized for switching power conversion, motor drive, and battery management in 48 V and 12 V vehicle electrical systems. As a member of the discrete semiconductor hierarchy, this MOSFET fits within the broader category of power transistors used in automotive electronic control units. Key specifications include 80 V drain-source breakdown voltage, 3.60 mΩ maximum R_DS(on) at V_GS = 10 V, 129 A continuous drain current, and 118 W power dissipation at T_C = 25 °C. The OptiMOS 7 technology reduces gate charge and output capacitance versus prior generations, lowering switching losses and enabling higher-frequency operation. The top-side cooled SSO10T package provides an exposed die top surface for direct attachment to a heatsink or cold plate, dramatically reducing thermal resistance compared to bottom-cooled packages. Typical applications include 48 V mild-hybrid electric vehicle (MHEV) systems, electric power steering (EPS), brake-by-wire actuators, DC-DC converters, and battery management systems (BMS). The automotive-grade qualification (AEC-Q101) makes it suitable for under-hood environments where temperature, vibration, and humidity stress exceed commercial-grade requirements. When designing with this MOSFET, ensure the gate driver can supply sufficient peak current (typically >1 A) to charge the input capacitance quickly, and select a gate resistor to balance switching speed and ringing. The top-side cooling surface should be thermally bonded to the heatsink with thermal interface material (TIM) to achieve the rated thermal performance.
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
The Infineon IAUCN10S5L110TATMA1 is an automotive-grade OptiMOS 5 N-channel power MOSFET rated at 100 V VDS with 11.3 mΩ maximum RDS(on) and 61 A continuous drain current (Tj), housed in a top-side cooled SSO10T (5x7) surface-mount package (PG-LHDSO-10-1). The suffix "L110" denotes the 11.3 mΩ on-resistance variant, while "ATMA1" indicates the automotive-qualified tape-and-reel ordering code. An N-channel power MOSFET is a voltage-controlled semiconductor switch in which applying a positive gate-source voltage creates an inversion layer that conducts current between drain and source. MOSFETs belong to the field-effect transistor (FET) family, which sits within the broader power discrete semiconductor hierarchy: MOSFET -> FET -> discrete semiconductor -> semiconductor. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform optimized for low conduction and switching losses in automotive and industrial power conversion. Key differentiating features include 11.3 mΩ maximum RDS(on) at VGS=10 V, logic-level gate drive (10 V VGS fully enhanced, 4.5 V guaranteed enhancement), 175°C maximum operating junction temperature, MSL1 rating up to 260°C peak reflow, and 100% avalanche-tested ruggedness. The PG-LHDSO-10-1 (SSO10T 5x7) package features a top-side thermal pad that enables direct cooling via the package lid rather than the PCB copper, dramatically lowering thermal resistance in z-axis constrained designs. The OptiMOS 5 trench cell architecture delivers an industry-leading FOM (figure of merit = RDS(on) × Qg), reducing both conduction and switching losses. The top-side cooled SSO10T package achieves thermal resistance (RthJC) on the order of 0.9°C/W, an order of magnitude better than conventional SO-8 footprint parts, which is critical for high-current automotive applications such as 48 V mild-hybrid systems, electric power steering, and DC-DC converters. Typical applications include automotive 48 V DC-DC converters, electric power steering (EPS) systems, battery management systems (BMS) for xEVs, motor drives for pumps and fans, and telecom/datacenter 48 V intermediate bus converters. The automotive-grade qualification and extended reliability testing make it suitable for safety-critical systems requiring AEC-Q101 compliance. When designing with this part, prioritize gate-driver impedance to control switching losses, and account for the top-side cooled package's unique PCB layout: the drain tab sits on top of the package, and source connections are routed through the side leads. A 1 Ω gate resistor is typically sufficient to manage dv/dt ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon IAUCN10S5L280DATMA1 is a dual N-channel MOSFET array in a 100V class, rated at 23A continuous drain current (Tj) and 38W power dissipation (Tc), housed in a surface-mount PG-TDSON-8-61 (SSO8) package. It belongs to Infineon's OptiMOS 5 100V family and is qualified for automotive applications, making it suitable for harsh-environment designs including 48V automotive systems, LED lighting drivers, and motor control. A dual MOSFET (or MOSFET array) is a single package containing two independent MOSFET dies with shared source connections or fully isolated, used to halve board space, simplify gate-drive routing, and improve thermal coupling in half-bridge, full-bridge, and synchronous-rectifier topologies. MOSFET arrays sit within the broader category of power MOSFETs, which in turn are a key sub-family of discrete semiconductors, and ultimately fall under power management devices. Dual N-channel parts are particularly common in low-side and synchronous-rectifier positions where both switches can be driven with the same polarity. Key features of the IAUCN10S5L280DATMA1 include a 100V drain-source breakdown voltage (Vds), an ultra-low on-state resistance for the 100V OptiMOS 5 generation, and a logic-level compatible gate drive. The SSO8 (PG-TDSON-8-61) package offers an exposed drain pad that dramatically reduces thermal resistance, allowing the dual die to share a single cooling surface. The 38W Tc power rating reflects the package's ability to dissipate substantial heat when mounted on a sufficient copper area. Architecturally, the OptiMOS 5 platform uses Infineon's latest trench MOSFET technology, which optimizes the figure-of-merit (FOM = Rds(on) × Qg) for switching loss reduction. The low Rds(on) per die minimizes conduction loss, while the optimized gate charge enables higher switching frequencies without excessive driver loss. The result is a part that performs well in both hard-switched and soft-switched power topologies, from 48V DC-DC converters in mild-hybrid vehicles to high-frequency synchronous buck stages in industrial automation. Typical applications include automotive 48V motor drives, LED lighting ballasts, isolated DC-DC converter primary-side switches, and OR-ing / hot-swap controllers. The dual-die configuration is particularly useful in half-bridge and synchronous-rectifier layouts where PCB routing symmetry is critical. The automotive grade qualification (per the IAU prefix) means the part is suitable for AEC-Q101 environments including engine-control units, battery management, and electric power steering. When designing with this part, ensure the gate drive voltage matches the OptiMOS 5 Vgs(th) and that the SSO8 exposed pad is soldered to a copper pour of at least 1 square inch for thermal performance. Pay attention to dv/dt-induced turn-on in half-bridge configurations; adding a small gate-source resistor (10-100kΩ) on the lower FET prevents spurious turn-on from the high-side dV/dt. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet alone.
IAUCN10S7L180ATMA1 - 100V 39A 18mΩ Automotive MOSFET | Infineon
The Infineon IAUCN10S7L180ATMA1 is a 100 V N-channel OptiMOS™ 7 automotive power MOSFET delivering 39 A continuous drain current (Tj) and 58 W power dissipation (Tc) in a surface-mount PG-TDSON-8-34 package. The device features a maximum drain-source on-resistance of 18 mΩ, a gate threshold of 1.6 V, and a total gate charge of 11 nC, with input capacitance of 272 pF and output capacitance of 668 pF. According to the Infineon datasheet, it is qualified for automotive applications and supports a ±20 V maximum gate-source voltage. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for power conversion, motor control, and load switching. N-channel MOSFETs such as the IAUCN10S7L180ATMA1 conduct current between drain and source when a positive gate-source voltage is applied. They belong to the broader class of power transistors within discrete semiconductors, alongside IGBTs and P-channel MOSFETs. The OptiMOS™ 7 family from Infineon represents a seventh-generation trench MOSFET platform optimized for low R DS(on), low switching losses, and high reliability in harsh automotive environments. Key features include an extremely low R DS(on) of 18 mΩ at 10 V VGS, reducing conduction losses in high-current paths; a low gate charge of 11 nC, enabling fast switching and reduced driver losses; and a wide operating junction temperature range of -55 °C to +175 °C, suitable for under-hood automotive applications. The PG-TDSON-8-34 package provides an exposed drain pad for efficient thermal dissipation. The device uses Infineon's advanced trench technology to achieve a Figure of Merit (FOM = R DS(on) × Q g) that is among the lowest in its voltage class. This results in lower total power loss during both conduction and switching, enabling higher system efficiency and smaller heatsink requirements in DC-DC converters and motor drive stages. Typical applications include automotive LED headlight drivers, electric water pumps, engine cooling fans, electronic power steering (EPS), and 12 V/48 V DC-DC converters. The part is also suited for body electronics modules and battery management systems in mild-hybrid vehicles. When designing with this MOSFET, ensure the gate driver can supply sufficient peak current to charge the input capacitance quickly. The exposed pad must be soldered to a sufficiently large copper area (typically ≥ 100 mm²) to maintain junction temperature within safe limits under continuous load. This page synthesizes Infineon manufacturer data, distributor pricing, drop-in alternative analysis, and practical PCB thermal design notes not found in a single manufacturer datasheet, providing a one-stop engineering reference for selecting and sourcing the IAUCN10S7L180ATMA1.
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
The Infineon IAUCN10S7L290TATMA1 is an automotive-grade N-channel power MOSFET from the OptiMOS™ 7 family, rated at 100 V VDS(max) with 27 A continuous drain current and a maximum on-resistance of 28.6 mΩ, packaged in a top-side cooled PG-LHDSO-10-1 (SSO10T 5x7) surface-mount housing. It is designed for high-efficiency switching in 12 V and 24 V automotive systems where low conduction loss, low gate charge, and superior thermal performance are critical. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used as a fast switch or amplifier in power-conversion circuits. In the broader taxonomy, a MOSFET sits below discrete transistors, below discrete semiconductors, and ultimately below power management semiconductors. N-channel enhancement-mode MOSFETs such as the IAUCN10S7L290TATMA1 are the dominant choice for low-side and high-side switches in synchronous buck converters, half-bridges, and motor drivers because they offer lower RDS(on) per unit silicon area than equivalent P-channel parts. Key differentiating parameters include a maximum RDS(on) of 28.6 mΩ at VGS = 10 V, a maximum continuous drain current of 27 A at TC = 25 °C, a maximum power dissipation of 45 W at TC, and a top-side cooled source-down package that enables direct PCB heatsink attachment for superior thermal extraction. The OptiMOS™ 7 cell technology reduces gate charge (Qg) and output capacitance (Coss) versus the previous OptiMOS™ 5 generation, directly lowering switching losses in high-frequency DC-DC converters. Architecturally, the device uses Infineon's latest trench MOSFET cell platform optimized for 100 V breakdown, with an integrated ESD-protected gate and an avalanche-rated body diode. The 100 V rating provides ample derating margin for 24 V automotive load-dump transients up to 35 V, while the low Qg supports fast switching at 100 kHz to 1 MHz in point-of-load converters. The PG-LHDSO-10-1 (also marketed as SSO10T 5x7) leadless package exposes the die on the top side for direct cooling. Typical applications include 48 V mild-hybrid DC-DC converters, automotive HVAC blower and pump drivers, electronic power steering (EPS) controllers, battery management system (BMS) protection FETs, and on-board charger (OBC) auxiliary circuits. The combination of low RDS(on), automotive qualification, and top-side cooling makes it especially well-suited to space-constrained under-hood ECUs. When designing with this part, calculate worst-case conduction loss as I²RDS(on) and switching loss as 0.5 × VDS × ID × (tr + tf) × fSW. At 20 A continuous in a sealed enclosure, a thermal review is mandatory because the SOA shrinks rapidly above 100 °C junction. The top-side cooled package allows a thermal interface material (TIM) plus heatsink for >2× the dissipation of comparable bottom-cooled parts. This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone. Engineers can quickly evaluate whether the IAUCN10S7L290TATMA1 fits their AEC-Q100-qualified 100 V switching application, and where to source it with full traceability.
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
The Infineon IAUCN10S7N021ATMA1 is a 100 V automotive-grade N-channel MOSFET built on OptiMOS™ 7 technology, delivering a maximum drain-source on-resistance of 2.1 mΩ at VGS=10 V and continuous drain current of 175 A (Tj) in a compact PG-TDSON-8-53 (SSO8, 5x6 mm) surface-mount package with exposed pad. An automotive power MOSFET is a specialized N-channel enhancement-mode transistor designed and qualified for the harsh electrical and thermal environments of vehicle electrical systems. The IAUCN10S7N021ATMA1 belongs to the discrete semiconductor family (MOSFET > power MOSFET > automotive MOSFET > OptiMOS 7), and serves as the synchronous-rectification or high-side/low-side switch in 48 V and 12 V powertrain, body-electronics, and DC-DC converter applications where low conduction loss, high switching speed, and AEC-Q101 reliability are required. Key features include an ultra-low typical R<sub>DS(on)</sub> of 2.1 mΩ at 10 V VGS, a maximum drain current of 175 A at case temperature, 217 W power dissipation at Tc, gate threshold VGS(th) of 3.2 V typical, total gate charge of 105 nC at 10 V, and an operating junction temperature range of -55 °C to +175 °C. The OptiMOS 7 process reduces figure-of-merit R<sub>DS(on)</sub>×Q<sub>g</sub> by a significant margin versus prior OptiMOS generations, improving switching efficiency at high frequencies. The device uses Infineon's latest advanced trench cell architecture and is qualified to AEC-Q101, making it suitable for safety-critical automotive loads. Its low Q<sub>g</sub> (105 nC) and 2.98 nF C<sub>iss</sub> make it well-suited to high-frequency SMPS designs where driver losses and switching-node ringing must be minimized. Typical applications include 48 V DC-DC converters, 12 V/48 V belt-starter-generator systems, automotive EPS (electric power steering), electric vehicle traction inverters, and high-current USB-PD/EPR charging ports. The part is also widely used as a synchronous rectifier in telecom and server bus converters operating above 60 V input. When designing with this MOSFET, place the gate-drive resistor and bootstrap diode within 5 mm of the gate pad to minimize parasitic loop inductance, and ensure the exposed pad is soldered to at least 100 mm² of copper for the 217 W power rating. The 2.1 mΩ R<sub>DS(on)</sub> translates to roughly 65 W of conduction loss at 175 A continuous — heat-sinking must be designed for this. This page synthesizes distributor pricing, drop-in alternatives, parametric proximity, and practical PCB-layout notes not found in the manufacturer datasheet alone, with cross-brand equivalents sourced from cross-reference web data.
IAUCN10S7N074ATMA1 - 100V 7.4mΩ N-Channel OptiMOS 7 MOSFET | Infineon
The Infineon IAUCN10S7N074ATMA1 is a 100 V automotive-grade N-channel power MOSFET built on Infineon's OptiMOS™ 7 technology, delivering 78 A continuous drain current (Tj) and a typical R<sub>DS(on)</sub> of 7.4 mΩ in a compact PG-TDSON-8-34 (TDSON EP) surface-mount package. The part is qualified to AEC-Q101, targeting 48 V automotive electrical systems, mild-hybrid eMotors, and high-current DC-DC converters. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route and regulate current in power conversion. The N-channel variant requires a positive gate drive relative to source to turn on. Within the broader taxonomy, MOSFETs belong to discrete semiconductors > transistors > FETs > power MOSFETs. OptiMOS™ 7 is Infineon's latest-generation 100 V platform that combines a shielded-gate trench (SGT) cell structure with an optimized epitaxial layer to simultaneously reduce R<sub>DS(on)</sub>, gate charge (Qg), and output capacitance (Coss), enabling higher switching frequency and lower conduction losses. Key features of the IAUCN10S7N074ATMA1 include a maximum drain-source voltage V<sub>DS</sub> of 100 V, continuous drain current I<sub>D</sub> of 78 A at T<sub>C</sub>, pulsed drain current support up to [DATA_NEEDED: pulsed Id], gate-source voltage V<sub>GS</sub> rating of ±20 V, and typical R<sub>DS(on)</sub> of 7.4 mΩ at V<sub>GS</sub>=10 V. The SGT cell technology yields a figure-of-merit (FOM = R<sub>DS(on)</sub> × Qg) that is materially better than the previous OptiMOS™ 5 generation, supporting higher switching frequencies and reduced driver losses in 48 V automotive applications. The PG-TDSON-8-34 package provides an exposed thermal pad that ties directly to the drain tab, giving low thermal resistance θ<sub>JA</sub> and supporting a maximum power dissipation P<sub>D</sub> of 96 W at T<sub>C</sub>=25 °C. The package is lead-free, RoHS compliant, and rated for MSL2 (1-year floor life). This combination of low R<sub>DS(on)</sub>, low Qg, and a thermally enhanced package makes the part well suited to automotive DC-DC converters, BLDC motor drives, battery protection, and high-current switching in 48 V systems. Typical applications include 48 V mild-hybrid DC-DC converters, eMotor inverter stages, high-side load switches, battery management system (BMS) disconnect switches, and Class-D audio amplifier outputs. Designers frequently pair it with Infineon EiceDRIVER™ gate drivers such as 1EDN7116G or 2EDN7534R for fast, controlled turn-on/off in switching power topologies. A critical design consideration is gate-drive voltage. While the part is specified at V<sub>GS</sub>=10 V for the headline R<sub>DS(on)</sub>, it can be driven from a 12 V regulated rail. Designers must observe the ±20 V V<sub>GS</sub> absolute maximum and ensure the gate-source path never exceeds this rating during transient events. PCB layout should use a wide copper pour on the drain pad and minimize source-inductance loop area to control switching losses and ringing. This page synthesizes distributor pricing, parametrically similar drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
The Infineon IAUS260N10S5N019TATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 5 technology platform, rated at 100 V drain-to-source voltage with 260 A continuous drain current (Tj) and an ultra-low typical on-state resistance of 1.9 mΩ, housed in a topside-cooled PG-HDSOP-16-2 (TOLT) surface-mount package. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power conversion applications. MOSFETs belong to the discrete semiconductor hierarchy (MOSFET -> transistor -> semiconductor device) and serve as the primary switching element in DC-DC converters, motor drives, and automotive electronic systems. The 100 V class of MOSFETs targets 48 V automotive bus rails, industrial power tools, and high-current synchronous rectification stages. Key features include an industry-leading 1.9 mΩ Rds(on) at 10 V Vgs, 300 W continuous power dissipation at Tc, and a topside-cooled TOLT package that enables direct attachment to a heatsink on the top of the device. The OptiMOS™ 5 generation delivers a figure-of-merit improvement of approximately 30% versus the previous OptiMOS™ 3 platform, with lower gate charge (Qg) and reduced switching losses. The device is qualified for automotive use cases per the IAUS part-number prefix. The IAUS260N10S5N019TATMA1 uses a trench-gate MOSFET structure optimized for low conduction loss at high currents, making it particularly suited to high-power-density automotive 48 V applications. The topside-cooled package dramatically improves thermal resistance (RthJC) by decoupling the drain thermal path from the PCB, allowing the PCB to remain compact while the heatsink is mounted on the package top side. Typical applications include 48 V automotive pumps, electric fans, e-compressors for electric vehicle HVAC systems, and high-current DC-DC converters. The combination of very low Rds(on) and topside cooling makes this part especially valuable where PCB bottom-side heatsinking is impractical or impossible due to chassis or enclosure constraints. When designing with this part, pay close attention to the gate-drive circuit: a peak gate current of several amps is needed to switch the large die area quickly. Use a dedicated gate-driver IC (such as the Infineon 1EDN series) and minimize the gate-loop inductance. The topside thermal pad must be mated to a heatsink with a defined torque and thermal interface material to achieve datasheet RthJC ratings. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing an engineer-ready reference for sourcing and qualifying the IAUS260N10S5N019TATMA1.
IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon
The Infineon IAUS300N08S5N011TATMA1 is an N-channel OptiMOS-5 power MOSFET rated at 80 V drain-source voltage, 300 A continuous drain current (Tj), and an ultra-low 1.1 mOhm maximum R_DS(on) at V_GS = 10 V, housed in the PG-HDSOP-16-2 surface-mount package with 375 W power dissipation (Tc). It is an automotive-grade part targeting high-current 48 V systems. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an electric field at the gate to control current flow between drain and source. In the broader semiconductor taxonomy, MOSFETs sit within discrete semiconductors, then power transistors, and finally power management switches. N-channel enhancement-mode MOSFETs like this one are the workhorse of high-efficiency synchronous rectification, motor drive, and DC-DC conversion because their low on-resistance minimizes conduction loss and their fast switching speeds shrink magnetics and capacitors. The OptiMOS-5 family is Infineon's fifth-generation 80-300 V platform optimized for automotive 48 V boardnet, mild-hybrid e-machines, and high-current telecom bricks. Key headline specifications include: 1.1 mOhm maximum R_DS(on) at V_GS = 10 V, 231 nC total gate charge (Q_G) at 10 V, 130 pF typical C_OSS, 3 V maximum gate-threshold voltage, and 16.25 nF typical C_RSS. The PG-HDSOP-16-2 package is a wettable-flank, dual-side-cooling SMD outline designed for high-current automotive PCB assemblies with Kelvin-source connection. The device uses Infineon's advanced OptiMOS-5 trench cell architecture with a 75 V to 120 V optimized voltage class. The 1.1 mOhm R_DS(on) per cell combined with low Q_G reduces both conduction and switching losses, enabling high-frequency operation above 100 kHz in 48 V-to-12 V or 48 V-to-3.3 V point-of-load converters used in mild-hybrid vehicles. Typical applications include 48 V mild-hybrid e-machines, electric power steering (EPS), 48 V DC-DC converters, high-current brushless DC motor drives, and automotive battery disconnect switches. The wide 80 V rating also makes it suitable for industrial 48 V telecom bricks and solar micro-inverters where a low on-resistance is critical to maintain efficiency at high load current. When designing with this MOSFET, ensure the gate driver can source and sink sufficient peak current (typically 1-2 A) to charge the 231 nC Q_G quickly and minimize switching loss. The Kelvin-source pin (pin 4) must be connected directly to the driver ground return to suppress source-inductance-induced gate ringing and prevent shoot-through in half-bridge topologies. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers select and source the IAUS300N08S5N011TATMA1 for automotive and industrial 48 V power applications.
IAUS300N08S5N012 - 80V 300A 1.2mΩ OptiMOS 5 Power MOSFET | Infineon
The Infineon IAUS300N08S5N012 is an 80 V N-channel enhancement-mode power MOSFET from the OptiMOS 5 family, delivering 300 A continuous drain current at Tc and an ultra-low R<sub>DS(on)</sub> of 1.2 mΩ typical at VGS=10 V in the PG-HSOG-8-1 surface-mount package. It is AEC-qualified, MSL1 to 260°C peak reflow, and rated for 175°C operating temperature, making it a purpose-built automotive-grade switching device. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route and switch high currents at high frequencies. Power MOSFETs sit inside the hierarchy discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> power management switch. They are differentiated from signal MOSFETs by low on-resistance, high current handling, and avalanche ruggedness, making them the workhorse of switched-mode power supplies (SMPS), motor drives, and load switches. The IAUS300N08S5N012's headline figures include 1.2 mΩ typical R<sub>DS(on)</sub> at 10 V VGS, 300 A continuous Id, 375 W power dissipation, and an avalanche-rated single-pulse drain current. Its threshold voltage VGS(th) of 3.8 V at 275 µA supports standard 12 V automotive gate-drive architectures, while the optimized OptiMOS 5 cell shrinks switching losses and reduces Qg for higher-frequency, higher-efficiency designs. The OptiMOS 5 process technology uses a planar trench structure to minimize R<sub>DS(on)</sub> × area figure-of-merit, which directly translates to lower conduction loss in heavy-load conditions. Combined with 100% avalanche-tested ruggedness and a low thermal resistance package, the IAUS300N08S5N012 is engineered for high-reliability environments where long-term operation at high junction temperature is required. Typical applications include high-current automotive 48 V/12 V load switches, electric power steering (EPS) motor drives, brake-by-wire systems, DC-DC converter primary switches, battery management protection, and high-power industrial SMPS. Designers choose this part when conduction loss dominates the thermal budget and ultra-low R<sub>DS(on)</sub> is mandatory. When designing, derate Id to roughly 50% of the 300 A rating once package thermal resistance and PCB copper are accounted for; a continuous 150 A load on a 1 oz copper 4-layer board typically requires at least 6 cm² of copper under the PG-HSOG-8-1 thermal pad. Always gate-drive with a dedicated driver such as the EiceDRIVER 1EDN series to keep switching loss in check. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IAUS300N08S5N012T - 80V, 1.2 mΩ, 300A OptiMOS 5 MOSFET | Infineon
The Infineon IAUS300N08S5N012T is an N-channel power MOSFET built on Infineon's OptiMOS 5 technology, rated for 80 V drain-source voltage, 1.2 mΩ maximum on-state resistance, and 300 A continuous drain current, supplied in a topside-cooled TOLT (PG-HDSOP-16-2) surface-mount package with 375 W power dissipation at case temperature. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch designed to handle high currents and voltages. MOSFETs belong to the transistor family within discrete semiconductors, and they are the fundamental building blocks of switched-mode power conversion. The IAUS300N08S5N012T sits in the 80 V N-channel subcategory and is specifically engineered for 48 V automotive systems including mild-hybrid powertrains, e-machines, DC-DC converters, and battery switches. The device's headline parameter is its ultra-low R_DS(on) of 1.2 mΩ at V_GS = 10 V, which minimises conduction losses in high-current paths. The 300 A continuous drain current rating (current limited by bondwire, with the chip itself capable of carrying 400 A at 25 °C with R_thJC = 0.4 K/W) makes it well-suited to high-power switching nodes. The device is qualified to AEC-Q101 for automotive use, and the TOLT topside-cooled package offers a low thermal resistance path to a cold plate or heatsink. Typical applications include 48 V traction inverters, 48 V DC-DC converters, 48 V battery main switches, high-current OR-ing circuits, and synchronous rectification in telecom and industrial power supplies. Its AEC-Q101 qualification also supports industrial-grade high-current switching where long-term reliability is required. When designing with the IAUS300N08S5N012T, careful PCB layout is critical: minimise source-loop inductance, use a wide copper pour on the topside pad, and ensure the V_GS gate-drive voltage is firmly above the threshold with adequate gate-drive strength to avoid shoot-through. This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single reference for BOM decisions and second-source selection.
IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΩ N-Ch OptiMOS 5 | Infineon
The Infineon IAUT165N08S5N029ATMA2 is an 80 V N-channel power MOSFET built on Infineon's OptiMOS™ 5 technology, rated for 165 A continuous drain current (Tc) and 167 W power dissipation, with an ultra-low typical on-resistance of 2.9 mΩ, housed in a surface-mount PG-HSOF-8-1 package. It is AEC-Q101 qualified for automotive use and is 100% avalanche-tested by the manufacturer. The device is also a Green Product (RoHS compliant) with MSL1 rated up to 260 °C peak reflow. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to efficiently route or block current in power-conversion circuits. Power MOSFETs sit within the broader hierarchy of discrete semiconductors, below IGBTs and thyristors, and are the workhorse of low-to-medium-voltage (< 250 V) switching applications. N-channel enhancement-mode MOSFETs like the IAUT165N08S5N029 are particularly common in high-current, low-side or high-side (with charge pump) switching positions because their lower R<sub>DS(on)</sub> per unit silicon area makes them more efficient than equivalent P-channel parts. Key features of the IAUT165N08S5N029ATMA2 include a maximum pulsed drain current of 660 A, an avalanche energy rating of 225 mJ, and an operating junction temperature up to 175 °C. The combination of 2.9 mΩ R<sub>DS(on)</sub> and 80 V drain-source breakdown voltage places this part squarely in the 48 V automotive / mild-hybrid, battery-isolation, and high-current synchronous-rectification sweet spot. OptiMOS™ 5 trench technology minimises gate charge (Q<sub>G</sub>) and output capacitance (C<sub>oss</sub>) for fast switching and reduced driver losses. Typical applications include 48 V eMobility power stages, high-current DC-DC converters, battery management systems (BMS) protection, motor drives for electric power steering (EPS) and water/oil pumps, and OR-ing / hot-swap controllers. Its low R<sub>DS(on)</sub> also makes it suitable for high-current synchronous rectification in telecom and server point-of-load converters. Design-in must respect the HSOF exposed-pad thermal path; without sufficient PCB copper, the 167 W Tc rating cannot be realised at realistic ambient temperatures.
IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET
The Infineon IAUT300N08S5N011ATMA1 is an 80 V N-channel automotive-grade power MOSFET from the OptiMOS 5 family, delivering up to 410 A pulsed drain current (Tj) with an ultra-low R<sub>DS(on)</sub> of 1.10 mOhm maximum at 10 V V<sub>GS</sub>, housed in a surface-mount PG-HSOF-8-1 (TOLL 10x12) package. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for high-efficiency power conversion. The IAUT300N08S5N011ATMA1 belongs to the N-channel enhancement-mode family, a subset of power MOSFETs that conducts when a positive gate-source voltage is applied. Within the broader power-semiconductor hierarchy, it sits under: MOSFET -> discrete semiconductor -> power management component. The "automotive" prefix ("AU") and the Infineon OptiMOS 5 designation indicate AEC-Q101 qualification, optimized for 48 V board-net applications where lowest conduction loss and high inrush current capability are required. Key specifications include a continuous drain current of 300 A, pulsed drain current of 410 A (limited by thermal and bonding constraints), 375 W power dissipation at T<sub>C</sub> = 25 C, and a threshold voltage V<sub>GS(th)</sub> of 3.8 V. The input capacitance C<sub>iss</sub> is 16.25 nF, output capacitance C<sub>oss</sub> is 2.6 nF, and reverse transfer capacitance C<sub>rss</sub> is 130 pF, with a total gate charge Q<sub>g</sub> of 231 nC at 10 V V<sub>GS</sub>. These switching figures, combined with 1.1 mOhm on-resistance, make the device well-suited for high-frequency switching at very high current levels. Built on Infineon's OptiMOS 5 trench technology, the device achieves best-in-class figure-of-merit (R<sub>DS(on)</sub> x Q<sub>g</sub>) for the 80 V class. The PG-HSOF-8-1 (TOLL 10x12) package exposes the drain tab directly to the PCB copper, giving very low thermal resistance and enabling 375 W power handling when properly soldered to a sufficiently large copper thermal pad. Typical applications include 48 V automotive systems such as mild-hybrid inverter stages, high-current DC-DC converters, BLDC motor drives for e-mobility, electric power steering (EPS), and battery protection disconnects. The low R<sub>DS(on)</sub> directly reduces conduction loss, improving overall drive-train efficiency and thermal headroom. When designing with this part, ensure the PCB thermal pad layout follows Infineon's PG-HSOF-8-1 footprint guidelines to achieve the rated thermal performance. Gate-drive design must account for the 231 nC Q<sub>g</sub>; a 10 Ohm gate resistor is typically recommended to limit ringing and dv/dt-induced turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
The Infineon IAUT300N08S5N012ATMA2 is an automotive-grade, N-channel power MOSFET rated at 80 V drain-to-source voltage and 300 A continuous drain current (Tc), with an ultra-low on-resistance of 1.2 mΩ (typical at 10 V VGS), housed in a surface-mount PG-HSOF-8-1 (8-pin HSOF with tab) package optimized for high-current automotive switching. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to efficiently route high currents in power conversion circuits. It belongs to the broader hierarchy of discrete semiconductors, sitting between passive components and ICs in modern electronics, and is the foundational building block of synchronous buck converters, motor drives, and load switches in 12 V / 24 V / 48 V automotive systems. Unlike a relay or bipolar transistor, the MOSFET gates are driven entirely by voltage, requiring near-zero drive current and enabling MHz-class switching frequencies. Key features of this part include the OptiMOS™-5 80 V technology platform, AEC-Q101 automotive qualification, a continuous drain current of 300 A at 25 °C case temperature, pulsed current handling above 1200 A, and a maximum power dissipation of 375 W (Tc). The PG-HSOF-8-1 package exposes the drain tab as a large thermal pad, yielding junction-to-case thermal resistance values that support very high transient current loads. Logic-level compatibility is not specified - the standard gate drive is 10 V VGS, which suits 12 V automotive supply rails after a charge-pump or gate-driver stage. The device is intended for high-current synchronous rectification, battery protection, and motor-control switching in mild-hybrid (48 V) and conventional 12 V automotive power nets. Its 1.2 mΩ R<sub>DS(on)</sub> minimizes conduction loss, while the robust avalanche rating and dv/dt capability ensure reliable switching under harsh transients. The optimized internal cell structure also reduces gate charge (Qg) for fast switching transitions. Typical applications include 12 V/48 V automotive load switches, electric power steering (EPS) inverter stages, brake-by-wire and electro-mechanical braking modules, DC-DC converter synchronous rectifiers, and battery disconnect switches in mild-hybrid electric vehicles. The automotive-grade qualification makes it the preferred choice for safety-critical body and chassis ECUs. When designing with this part, ensure the gate driver can source/sink sufficient peak current for fast Qg transitions, and that the PCB layout provides enough copper area to dissipate the expected I²R losses at the operating duty cycle. Use Kelvin-source connections where possible to avoid dv/dt-induced turn-on of the high-side device in a half-bridge. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a one-stop view of the part for sourcing decisions.
IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon
The Infineon IAUT300N08S5N014ATMA1 is an automotive-grade N-channel MOSFET rated for 80 V VDS and 300 A continuous DC drain current, with an ultra-low typical on-resistance of 1.4 mΩ at VGS=10 V, packaged in the surface-mount PG-HSOF-8-1 (8-pin + tab) HSOF footprint and qualified to AEC-Q101. The part belongs to Infineon's IAUT/OptiMOS 5 family and is screened for MSL1 moisture sensitivity with 260 °C peak reflow compatibility and a maximum 175 °C operating junction temperature. A power MOSFET is a voltage-controlled majority-carrier switch in which a gate-source electric field modulates the conductance of a conducting channel between source and drain. N-channel enhancement-mode MOSFETs are the dominant switch topology in high-current DC-DC converters, motor drives, and synchronous-rectifier stages because their lower RDS(on) per unit silicon area delivers higher efficiency than P-channel counterparts. The IAUT family targets 48 V automotive subsystems (e.g., mild-hybrid ECUs, electric power steering, braking systems, brushless DC pumps and fans) where the 80 V drain rating provides ample headroom for transients on a nominal 48 V bus. Key features include 1.4 mΩ typical RDS(on) at VGS=10 V, 300 A continuous DC ID at TC=25 °C, 300 W maximum power dissipation at TC=25 °C, AEC-Q101 automotive qualification, MSL1 floor-life (unlimited at ≤30 °C/85 % RH), RoHS-compliant lead-free package, 100 % avalanche-tested die, and an ultra-low figure of merit (FOM = RDS(on) × Qg) for fast-switching applications. The tab is the drain, which must be soldered to a sufficiently large copper pour to act as both thermal via and electrical node. The die is built on Infineon's OptiMOS 5 trench technology, which lowers both on-resistance per cell and gate charge, thereby reducing conduction and switching losses simultaneously compared to earlier planar or stripe-cell generations. The PG-HSOF-8-1 package exposes the die directly to the PCB through a large source-clip lead frame, giving a junction-to-case thermal resistance typically below 0.5 °C/W and enabling the 300 W dissipation rating when the PCB thermal path is properly designed. Typical applications include 48 V mild-hybrid automotive DC-DC converters, high-current brushless DC (BLDC) motor drives for electric power steering and water/oil pumps, automotive e-fuse and battery disconnect switches, synchronous rectification in telecom and server buck converters, and high-current solenoid/relay driver stages. The 80 V rating and 300 A pulse capability also suit industrial inverter sections operating from 24-48 V battery rails. When designing with this part, keep the switching-node loop area minimal to control parasitic inductance and voltage overshoot, use a gate driver capable of sourcing/sinking 1-2 A peak to charge Qg quickly, and lay out at least 100-200 cm² of 2 oz copper on the drain tab to stay below the SOA envelope at high DC currents. This page synthesizes distributor stock and pricing, AEC-Q101/OptiMOS family context, drop-in alternatives in the same PG-HSOF-8-1 footprint, and practical thermal/SOA design notes that are not contained in the manufacturer datasheet alone.
IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUT300N10S5N015ATMA1 is a 100 V N-channel OptiMOS 5 power MOSFET rated for 300 A continuous drain current (Tc) and 375 W power dissipation, housed in a surface-mount PG-HSOF-8-1 package with exposed metal tab. It features an ultra-low on-state resistance of 1.5 mΩ (typical at VGS=10 V) and AEC-Q101 automotive qualification, making it purpose-built for high-current automotive switching. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch optimized for switching and conducting large currents at high efficiency. It belongs to the power-management transistor family, sitting below wide-bandgap devices (GaN, SiC) and above small-signal MOSFETs in the power-electronics taxonomy. The MOSFET's low R<sub>DS(on)</sub> directly determines conduction losses: P = I² × R<sub>DS(on)</sub>, so a 1.5 mΩ part dissipating 300 A loses approximately 135 W purely in conduction. Key features include 1.5 mΩ typical R<sub>DS(on)</sub> at VGS=10 V, ±20 V gate-source rating, and 100% avalanche-tested reliability per Infineon's OptiMOS 5 process. The device is AEC-Q101 qualified for automotive environments, supports MSL1 reflow up to 260°C peak, and operates across 175°C junction temperature. The OptiMOS 5 generation uses Infineon's latest trench-cell technology to lower switching losses versus earlier OptiMOS generations. The PG-HSOF-8-1 package provides a large exposed metal drain tab with very low thermal resistance (~0.4°C/W typical), enabling 375 W dissipation with proper PCB thermal via design. The footprint is optimized for high-current automotive PCB layouts where paralleling and copper-cooling area are critical. Compared with TO-220/TO-263 packages, PG-HSOF-8-1 achieves roughly half the R<sub>DS(on)</sub> per unit area thanks to its clip-bonded source-down construction. Typical applications include 48 V mild-hybrid inverter switching, high-current DC-DC converter primary-side switches, BLDC motor drivers in electric power steering and brake-by-wire, battery disconnect switches, and automotive e-fuse protection circuits. Its low R<sub>DS(on)</sub> reduces I²R losses in 300 A-class switching where every milliohm translates into significant thermal budget recovery. When designing with this device, calculate conduction loss P_cond = I_rms² × R<sub>DS(on)</sub> at your hottest operating temperature (R<sub>DS(on)</sub> typically doubles from 25°C to 175°C). Provide sufficient PCB copper area (at least 4 square inches of 2 oz copper with thermal vias) to keep junction rise below 50°C at full 300 A load. Gate-drive voltage should be 10 V for rated R<sub>DS(on)</sub>; lower VGS raises R<sub>DS(on)</sub> dramatically. This page synthesizes distributor pricing, AEC-Q101 drop-in alternatives, and practical thermal design notes not found in the manufacturer datasheet alone.
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
The Infineon IAUTN04S7N003ATMA1 is an automotive-grade OptiMOS 7 N-channel power MOSFET rated at 40 V VDS, 350 A continuous drain current (Tj), and 357 W power dissipation (Tc), housed in a surface-mount PG-HSOF-8-9 package (also known as TOLL, 10x12 mm). It features an ultra-low RDS(on) of 0.24 mOhm at 25 °C and is qualified to AEC-Q101 standards for automotive applications. An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. Power MOSFETs are a subclass of discrete semiconductors within the broader field-effect transistor family, used primarily as fast, efficient switching elements in power conversion circuits. The 40 V class is optimized for 12 V and 24 V automotive bus architectures, providing safe headroom over nominal rail voltages while minimizing conduction and switching losses. Within Infineon's OptiMOS 7 generation, this part represents the latest refinement in on-resistance per die area and figure-of-merit (FOM) optimization. Key specifications include a typical RDS(on) of 0.24 mOhm at VGS = 10 V, an avalanche-rated single-pulse drain current, and an intrinsic body diode with 83 ns typical reverse recovery time and 126 nC reverse recovery charge. The PG-HSOF-8-9 source-down package exposes the die on a large copper pad, achieving junction-to-case thermal resistance (RthJC) typically below 0.45 °C/W, which enables very high current handling without external heatsinking in well-designed PCBs. Architecturally, the device uses Infineon's OptiMOS 7 trench technology with a 30 V-or-above rated cell platform optimized for 40 V applications. The reduced gate charge (Qg) and output capacitance (Coss) profile yields low switching losses at high frequencies, enabling smaller magnetics in DC-DC converters. The part supports both hard-switched and soft-switched topologies, and the integrated body diode is robust enough for use as a freewheeling element in buck converters and OR-ing applications. Typical applications include 12 V / 24 V automotive electric power steering (EPS), brushless DC (BLDC) motor drives, battery management system (BMS) protection, high-current DC-DC converters, and electric vehicle (EV) traction inverters (low-voltage side). The combination of low RDS(on) and automotive qualification makes it well-suited as a high-side or low-side switch in safety-critical modules. When designing with this MOSFET, prioritize minimizing parasitic source inductance by using a Kelvin-source-connected footprint and placing gate-drive decoupling directly at the gate pin. The low RDS(on) is only realized with VGS = 10 V; logic-level gate drive is insufficient for full enhancement. Thermal design must rely on the bottom-exposed pad with sufficient copper area to keep Tj below 150 °C at worst-case SOA. This page synthesizes Infineon datasheet parameters, distributor pricing across DigiKey, Mouser, and Arrow, and drop-in alternatives from the OptiMOS 7 family plus competing 40 V TOLL parts - engineering content not assembled on any single distributor page.
IAUTN04S7N004ATMA1 - 40V 0.38mΩ 350A OptiMOS 7 | Infineon
The Infineon IAUTN04S7N004ATMA1 is an automotive-grade OptiMOS™7 N-channel power MOSFET rated at 40 V VDS, 0.38 mΩ maximum RDS(on), and 350 A continuous drain current (Tj), dissipating up to 255 W at Tc in a surface-mount PG-HSOF-8-8 (TOLL 10x12) package. Built on Infineon's latest OptiMOS 7 trench technology, it delivers class-leading figure-of-merit (FOM) for 40 V automotive systems, minimizing conduction and switching losses in high-current 12 V/24 V battery applications. A power MOSFET is a voltage-controlled semiconductor switch that uses a gate signal to modulate conduction between its drain and source terminals, enabling efficient power conversion in switched-mode topologies. As a category, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) belong to the broader family of discrete transistors within power semiconductors, sitting alongside IGBTs and thyristors. The 40 V OptiMOS 7 generation specifically targets low-voltage automotive powertrain, chassis, and body-electronics applications where efficiency, thermal performance, and reliability directly affect vehicle range and system cost. The IAUTN04S7N004's 0.38 mΩ RDS(on) minimizes I²R losses at high currents, while the optimized gate-charge (Qg) and low Qgd/Qgs ratios reduce switching losses in high-frequency DC-DC and BLDC motor-drive stages. Its AEC-Q101-qualified construction, lead-free PG-HSOF-8-8 package with exposed top-cooling pad, and 175°C maximum junction temperature support the harsh automotive under-hood environment. The device also features a logic-level gate-threshold compatible with microcontroller GPIO drivers. Typical applications include 12 V/24 V automotive BLDC motor drives (EPS, pumps, fans), 48 V mild-hybrid DC-DC converters, battery protection switches, and high-current solenoid/relay drivers. The combination of very low on-resistance and surface-mount TOLL footprint enables compact, high-power-density designs where traditional D2PAK parts would be too large. When designing with the IAUTN04S7N004, pay close attention to PCB layout: minimize the high-current loop (drain-source) and gate-drive loop to control parasitic inductance that causes voltage overshoot during turn-off. A 10 Ω gate resistor typically suffices; values below 5 Ω risk ringing, while values above 50 Ω slow switching and increase losses. Thermal management via the top-exposed thermal pad is essential at sustained currents above 200 A. The TOLL (TO-Leadless) 10x12 mm package provides an RthJC substantially lower than DPAK, enabling 255 W power dissipation with proper PCB copper thermal vias under the exposed pad. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes not collected in the manufacturer datasheet alone.
IAUTN04S7N005ATMA1 - 40V 0.44mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUTN04S7N005ATMA1 is an automotive-grade N-channel power MOSFET built on Infineon's OptiMOS™7 40 V technology platform, housed in the surface-mount PG-HSOF-8-8 (TOLL) package with a 10 mm × 12 mm footprint. It is rated for 40 V VDS, 0.44 mΩ maximum RDS(on) at 10 V VGS, and continuous drain current up to 350 A at the silicon junction. The device is qualified to AEC-Q101 for automotive power-converter applications. A power MOSFET is a voltage-controlled semiconductor switch used to convert and regulate electrical energy in switching power supplies, motor drives, and battery-management systems. The OptiMOS™7 family represents Infineon's latest-generation 40 V trench MOSFET process, positioned within the broader category of N-channel power MOSFETs, which themselves belong to the larger family of discrete semiconductors. Lower RDS(on) reduces conduction loss directly, while a smaller figure of merit (FOM = RDS(on) × Qg) reduces switching loss - both critical for high-frequency, high-current automotive designs. Key features include an ultra-low on-state resistance of 0.44 mΩ (max) at VGS = 10 V, low gate charge optimized for high-frequency switching, an avalanche-rated single-pulse body diode, and an operating junction temperature range up to 175 °C. The PG-HSOF-8-8 package exposes the drain on the top side for direct cooling via an attached heatsink or PCB copper inlay, enabling very high current density in compact layouts. The IAUTN04S7N005 uses Infineon's latest-generation 40 V OptiMOS™7 cell architecture, which delivers roughly a 30% RDS(on) reduction versus the previous OptiMOS™5 generation at the same die area. The TOLL (TO-Leadless) package eliminates the traditional leads and instead uses wide copper tabs, which simultaneously reduces package resistance, improves thermal impedance (junction-to-case), and minimizes parasitic inductance in high-di/dt switching loops. Typical applications include 12 V/24 V automotive DC-DC converters (e.g., 48 V mild-hybrid buck stages), traction inverter auxiliary rails, e-mobility battery disconnect switches, electric power steering (EPS) controllers, and high-current OR-ing / load-switch circuits. The part is also well suited to industrial high-density point-of-load converters. When designing with the IAUTN04S7N005, pay particular attention to PCB layout: minimize the high-di/dt loop (VIN → MOSFET → GND) by placing input capacitors and the MOSFET on the same copper layer with the shortest possible path. Use Kelvin-source connection where the gate-driver return attaches directly to the source tab, bypassing the source inductance. Maximum junction-to-ambient thermal resistance depends strongly on the PCB copper area beneath the exposed pad. This page synthesizes distributor pricing, drop-in alternatives, and practical layout guidance that complements the manufacturer's datasheet. Pricing reflects current stock across DigiKey, Mouser, and element14.
IAUTN12S5N017ATMA1 - 120V 1.7mΩ N-Channel OptiMOS 5 MOSFET | Infineon
The Infineon IAUTN12S5N017ATMA1 is a 120 V N-channel OptiMOS™ 5 power MOSFET in a surface-mount PG-HSOF-8-1 (HSOF-8) package, with a maximum drain current of 314 A and an ultra-low R<sub>DS(on)</sub> of 1.7 mΩ at V<sub>GS</sub>=10 V. It is qualified to 175 °C operating junction temperature and targeted at automotive HV-LV DC-DC converters, where high efficiency and small PCB footprint are mandatory. An N-channel power MOSFET is a voltage-controlled majority-carrier device whose drain current is modulated by the gate-source voltage V<sub>GS</sub>. Once V<sub>GS</sub> exceeds the threshold voltage (typically 2-4 V), a conductive channel forms in the drift region, allowing current to flow from drain to source. The IAUTN12S5N017 belongs to the OptiMOS 5 120 V family, which sits in the broader N-channel MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor taxonomy. The OptiMOS 5 generation uses a trench-gate technology optimised for low R<sub>DS(on)</sub> * figure-of-merit (FOM) and improved switching performance versus prior generations. Key specifications include R<sub>DS(on)</sub>_max of 1.7 mΩ at V<sub>GS</sub>=10 V, continuous drain current of 314 A at 25 °C case, gate charge Q<sub>g</sub> characterised up to 100 A pulsed drain current, and 175 °C maximum junction temperature. The HSOF-8 package features a large exposed source pad that doubles as the electrical source connection and as a low-thermal-resistance heatsink path, enabling the device to handle high currents on FR4 boards without an external heatsink. Architecturally, the device uses Infineon's latest-generation trench cell, which minimises both the on-state resistance and the gate-charge capacitance. Compared with the previous OptiMOS 4 generation, this typically yields ~30% lower conduction losses and faster switching at the same R<sub>DS(on)</sub> rating, allowing higher switching frequencies in DC-DC converters and therefore smaller magnetics. Typical applications include 48 V-12 V HV-LV DC-DC converters in mild-hybrid (48 V) automotive systems, telecom and server intermediate bus converters, high-current motor drives, hot-swap / OR-ing switches in 48 V backplanes, and battery protection / load disconnect circuits. The 120 V drain-source rating provides ample headroom above 48 V nominal buses (with switching transients reaching ~70-80 V). When designing with this part, place the gate-drive resistor within 5 mm of the gate pad and use a Kelvin-source connection (pin 2 in HSOF-8) to avoid source-inductance-induced gate-oscillation. A gate-drive voltage of 8-10 V is recommended for full enhancement into the 1.7 mΩ region; 4.5 V drive degrades R<sub>DS(on)</sub> significantly. This page synthesises distributor pricing, drop-in alternatives, and practical thermal design notes not collected in any single manufacturer or distributor product page.
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
The Infineon IAUZ18N10S5L420ATMA1 is a 100 V N-channel power MOSFET rated at 18 A continuous drain current, with a maximum on-resistance of 42 mΩ, housed in a 3.3 x 3.3 mm S3O8 (PG-TSDSON-8-32) surface-mount package. It is part of Infineon's automotive-grade OptiMOS 5 100 V family, qualified to AEC-Q101 for use in automotive powertrain, LED lighting, and DC-DC converter applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently switch or amplify signals in power electronics. Within the power semiconductor hierarchy, a MOSFET sits between IGBTs and standard FETs; OptiMOS 5 represents Infineon's fifth-generation optimized trench MOSFET process that delivers the lowest figure-of-merit (FOM = RDS(on) × Qg) in the 100 V class. This positions it within the broader class of voltage regulators, motor drivers, and DC-DC converters used in power management subsystems. Key features of this device include a 42 mΩ maximum RDS(on) at VGS = 10 V, low gate charge (Qg typ. 8.5 nC), low output charge (Qoss), an integrated body diode optimized for synchronous rectification, and a maximum junction temperature of 175 °C. The S3O8 (PG-TSDSON-8-32) package offers a Kelvin-source connection that reduces gate-drive parasitic effects and enables 30 W of continuous power dissipation with proper PCB thermal design. The IAUZ18N10S5L420 uses Infineon's latest 100 V OptiMOS 5 trench technology, which achieves the lowest specific on-resistance per unit area in its class. The 8-pin PG-TSDSON-8-32 package with exposed drain pad provides a typical thermal resistance (RthJA) of approximately 50 °C/W on a 1-inch² copper area, enabling high-current operation in compact automotive modules. Typical applications include automotive 48 V mild-hybrid DC-DC converters, LED headlight drivers, electric power steering (EPS) motor control, and high-current USB-PD power switches. The part's automotive qualification also makes it suitable for body control modules and battery management systems (BMS) in electric vehicles. When designing with this part, prioritize PCB layout to maximize the drain-pad copper area; the S3O8 package's thermal performance is dominated by PCB copper, not the package itself. For high-frequency switching (>100 kHz), use a gate resistor to control ringing, and place the gate drive loop area as small as possible to minimize parasitic inductance. This page synthesizes distributor pricing, drop-in alternatives, and practical thermal design guidance not consolidated on the manufacturer datasheet, including side-by-side comparison of OptiMOS 5 family members and competitor cross-brand equivalents in the S3O8 footprint.