IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
部品番号: IAUCN08S7N024TATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.46 | $34.60 |
| 100 | $3.08 | $308.00 |
| 500 | $2.74 | $1,370.00 |
| 1,000 | $2.45 | $2,450.00 |
IAUCN08S7N024TATMA1 概要
An N-channel power MOSFET is a voltage-controlled three-terminal semiconductor switch that uses an insulated gate to modulate conduction between source and drain. Within the broader taxonomy, the IAUCN08S7N024TATMA1 belongs to the discrete semiconductors category, more specifically MOSFETs, then enhancement-mode N-channel MOSFETs, then the automotive-grade sub-family, and finally Infineon's OptiMOS™ 7 generation optimized for low Rds(on) and high current handling. It is intended for high-current 12 V and 24 V automotive power trains such as electric power steering, brake systems, and DC-DC converters.
The IAUCN08S7N024TATMA1's headline specifications include 80 V drain-source breakdown voltage, 2.44 mΩ maximum Rds(on) at VGS=10 V, 165 A continuous drain current at junction temperature, and 157 W maximum power dissipation. The top-side cooled SSO10T package is engineered for direct PCB heat extraction to a heatsink or cold plate, dramatically reducing thermal resistance compared with bottom-cooled alternatives. The device is fully AEC-Q101 qualified and PPAP-capable for automotive OEM programs.
Built on Infineon's advanced OptiMOS™ 7 trench technology, the device achieves industry-leading figure-of-merit (FOM = Rds(on) × Qg) for 80 V MOSFETs, reducing both conduction and switching losses. The top-side cooling SSO10T package removes heat directly through the source tab to an attached heatsink, freeing PCB bottom-side copper for high-current routing and enabling more compact inverter designs.
Typical applications include automotive 12 V and 48 V high-current load switching, electric power steering (EPS) inverters, brake-by-wire motor drives, electric water/oil pumps, and high-power DC-DC converters in mild hybrid vehicles. The 80 V rating also provides comfortable transient margin on 12 V and 24 V automotive buses.
When designing with this part, ensure the gate driver can source/sink at least 1 nC of Qg into the gate within the desired switching time. Use Kelvin-source connection if available to minimize gate-drive parasitic inductance, and follow Infineon's SSO10T layout guidelines for thermal via patterns and source-tab soldering.
This page synthesizes Infineon datasheet specifications, AEC-Q101 automotive qualification status, SSO10T package thermal data, and cross-vendor drop-in equivalents not collected on a single manufacturer datasheet page.
ドロップイン代替品: IAUCN08S7N024TATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IAUCN08S7N024TATMA1 （同一形状・フットプリント） — 相違点: Package, Automotive Qualification, Technology, Drain-Source Voltage (VDS), MSL Level.
クイック比較ツール — 並列比較する代替部品を選択:
IAUCN08S7L033ATMA1
✅ ドロップイン✓ 在庫あり
$0.86 / 個
データシートを見る →IAUCN04S7N037GATMA1
✅ ドロップイン✓ 在庫あり
$0.89 / 個
データシートを見る →IAUCN10S5L110TATMA1
✅ ドロップイン✓ 在庫あり
$2.08 / 個
データシートを見る →IAUCN10S7L290TATMA1
✅ ドロップイン✓ 在庫あり
$0.36 / 個
データシートを見る →IAUC60N04S6L030HATMA1
✅ ドロップイン✓ 在庫あり
$0.94 / 個
データシートを見る →IAUCN08S7N024TATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (Vds) | 80 V |
| Continuous Drain Current (Id) at Tj | 165 A |
| Power Dissipation (Pd) at Tc | 157 W |
| Rds(on) Max at Vgs=10V | 2.44 mOhm |
| パッケージ / ケース | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) |
| 実装タイプ | Surface Mount |
| Cooling | Top-side cooled |
| Automotive Qualification | AEC-Q101 |
| RoHS ステータス | Compliant |
IAUCN08S7N024TATMA1 ピン構成
| ピン 1 | G — Gate (input) |
| ピン 2 | S — Source |
| ピン 3 | S — Source |
| ピン 4 | KS — Kelvin Source (gate return) |
| ピン 5 | S — Source |
| ピン 6 | S — Source |
| ピン 7 | S — Source |
| ピン 8 | D — Drain |
| ピン 9 | D — Drain |
| ピン 10 | D — Drain |
安全動作領域 (DC)
主な用途
IAUCN08S7N024TATMA1 の用途: 6 件s: Electric Power Steering (EPS) Inverter, Automotive 48V Mild-Hybrid DC-DC Converter, Electric Water/Oil Pump Motor Drive, Brake-by-Wire Actuator Drive, High-Current Automotive ECU Power Distribution, Industrial High-Current Motor Drive.
Electric Power Steering (EPS) Inverter
The IAUCN08S7N024TATMA1's 2.44 mΩ max Rds(on) at Vgs=10V and 165A continuous drain current make it a strong fit for 12V electric power steering inverter half-bridges. In a typical 3-phase EPS inverter, the MOSFET is placed in the inverter leg between battery and the BLDC motor phase; the 80V Vds rating provides load-dump margin above the 24V transient envelope. The top-side cooled SSO10T package mounts directly to an aluminum heatsink structure in the steering column, extracting heat away from the PCB and allowing sustained 80-100A RMS operation. Compared to bottom-cooled DPAK MOSFETs, this top-side cooling approach cuts thermal resistance by an estimated 40-50%, enabling smaller inverter housings.
おすすめ
Automotive 48V Mild-Hybrid DC-DC Converter
For 48V mild-hybrid systems, the IAUCN08S7N024TATMA1's 80V Vds rating provides reliable headroom over the 48V nominal rail plus inductive transients, while the 2.44 mΩ Rds(on) minimizes conduction loss on the high-current path between 48V battery and 12V buck converter. In a bidirectional 48V-12V DC-DC topology, this MOSFET is typically placed on the 48V high-side switching leg, operating at 100-200 kHz. The 157W power dissipation rating and SSO10T top-side cooling allow direct attachment to the chassis cold plate for high-duty-cycle operation. Per the Infineon OptiMOS 7 family characterization, the figure-of-merit improvement over prior generations reduces total switching losses by an estimated 30%.
おすすめ
Electric Water/Oil Pump Motor Drive
Automotive electric water and oil pumps require high-current PWM switching in a thermally constrained underhood environment, making the IAUCN08S7N024TATMA1 a strong candidate. Its 165A continuous current rating supports the inrush surge when the pump motor starts against a stalled load, while the 80V Vds comfortably handles the inductive flyback from the motor windings. The SSO10T package's top-side cooling allows the MOSFET to be bonded directly to the pump housing, which doubles as a heatsink and eliminates the need for a separate thermal management solution. Compared with older DPAK designs, this approach reduces PCB area by approximately 50%.
おすすめ
Brake-by-Wire Actuator Drive
Brake-by-wire systems demand redundant, fault-tolerant motor drive electronics where the IAUCN08S7N024TATMA1's AEC-Q101 qualification and OptiMOS 7 reliability are essential. The 2.44 mΩ Rds(on) keeps the H-bridge conduction loss below 30W at 100A peak phase current, which is critical for the compact actuator housing thermal budget. The 80V Vds rating handles the regenerative braking back-EMF and inductive transients with comfortable margin. The top-side cooled SSO10T package enables dual-sided PCB layouts where the bottom side carries signal and the top side interfaces to the actuator chassis.
おすすめ
High-Current Automotive ECU Power Distribution
The IAUCN08S7N024TATMA1 serves as a high-side smart-switch element in 12V/24V power distribution units where loads such as PTC heaters, glow plugs, or active suspension draw 50-150A. Its 80V Vds rating supports 24V commercial vehicle buses with inductive transient margin, and its 2.44 mΩ Rds(on) keeps full-load dissipation below 25W. The top-side cooled SSO10T package allows the MOSFET to dissipate directly into the PDU enclosure, while its AEC-Q101 qualification ensures compliance with automotive OEM reliability requirements. Per the Infineon datasheet, the device's SSO10T thermal resistance is optimized for direct chassis mounting.
おすすめ
Industrial High-Current Motor Drive
Outside automotive, the IAUCN08S7N024TATMA1 is suitable for industrial 24-48V high-current BLDC or brushed DC motor drives in robotics, AGVs, and small EV traction. Its 165A continuous current supports peak torque demands up to approximately 20 kW in a 48V system, while the 80V Vds handles regen transients. The OptiMOS 7 technology delivers a low FOM (Rds(on) × Qg), which reduces both conduction and switching losses - beneficial for high-frequency PWM at 20-50 kHz. The top-side cooled SSO10T allows attachment to the motor housing for direct chassis cooling in compact industrial designs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IAUCN08S7N024TATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IAUCN08S7L033ATMA1 | IAUCN04S7N037GATMA1 | IAUCN10S5L110TATMA1 | IAUCN10S7L290TATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-LHDSO-10-1 (SSO10T, 5x7 mm) | PG-LHDSO-10-1 (SSO10T, 5x7 mm) - same | PG-LHDSO-10-1 (SSO10T, 5x7 mm) - same | PG-LHDSO-10-1 (SSO10T, 5x7 mm) - same | PG-LHDSO-10-1 (SSO10T, 5x7 mm) - same | PG-LHDSO-10-1 (SSO10T, 5x7 mm) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (Vds) | 80 V | 80 V | 40 V | 100 V | 100 V | 40 V |
| Rds(on) max at Vgs=10V | 2.44 mOhm | 3.3 mOhm | 3.7 mOhm | 11 mOhm | 29 mOhm | 3 mOhm |
| Technology Family | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 | OptiMOS 7 | OptiMOS 6 |
| Automotive Qualified | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Top-Side Cooling | Yes | Yes | Yes | Yes | Yes | Yes |
主な差別化要因
- Lowest Rds(on) in Infineon SSO10T 80V OptiMOS 7 family （vs IAUCN08S7L033ATMA1)
- Highest voltage rating in low-Rds(on) OptiMOS 7 SSO10T family （vs IAUCN04S7N037GATMA1)
- OptiMOS 7 generation - best-in-class figure-of-merit （vs IAUC60N04S6L030HATMA1)
設計ノート
The SSO10T (PG-LHDSO-10-1) package is engineered for top-side cooling - the source tab on the top surface mates directly with an attached heatsink or cold plate. For maximum heat extraction, mount the part with a thin layer (50-100 um) of thermal interface material (TIM) between the source tab and the heatsink surface. Estimated: at 100A continuous current and 2.44 mΩ Rds(on), conduction loss is approximately 24.4W; with a typical SSO10T theta_JC of 0.8 C/W, the junction-to-case rise is about 19.5C, so adequate heatsink sizing is essential to keep Tj below 175C.
Per Infineon's SSO10T layout guidelines, use a copper pour on the drain pads (pins 8-10) to spread current and reduce PCB trace resistance. The Kelvin-source pin (pin 4) should be tied directly to the gate driver ground reference - do not share its return path with the high-current source traces to avoid gate-drive oscillations. Solder paste stencil aperture should be slightly larger than the pad to ensure sufficient solder fillet on the top source tab. Source-tab soldering is required for both electrical connection and thermal transfer.
Do not exceed 80V Vds even transiently - automotive load-dump transients on 12V systems can exceed 60V without proper TVS clamping, and 24V systems require suppression. The gate threshold Vgs(th) is typically 2-3V, so a 0V gate-shut-off is required; do not rely on weak pull-down to keep the MOSFET off. Also, the high peak current capability (165A continuous, higher pulsed) means the device can source extremely high short-circuit currents - ensure the system fuse or circuit-breaker is rated appropriately for the battery available current.
コンプライアンス情報
AEC-Q101 (automotive MOSFET standard, equivalent to AEC-Q100 stress test regime for discrete semiconductors) qualified per Infineon datasheet. RoHS compliant per distributor listings. Halogen-free status not explicitly stated in provided data.
