MOSFET
製品 (1294)
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
The Infineon IPB020N10N5LFATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 5 Linear FET technology, rated at 100 V VDS, 2.0 mΩ maximum RDS(on), and 176 A continuous drain current (Tc), housed in a surface-mount PG-TO263-3 (D2PAK) package. It combines an ultra-low on-state resistance with a wide safe operating area (SOA), enabling sustained linear-mode operation in the saturation region without the typical RDS(on) vs. linear-mode trade-off of standard MOSFETs. A power MOSFET is a voltage-controlled semiconductor switch used to switch or linearly regulate current in power-conversion circuits. MOSFETs sit within the discrete-semiconductor hierarchy: transistor -> MOSFET -> power MOSFET -> N-channel enhancement-mode power MOSFET. The Linear FET sub-category is engineered to dissipate significant power in the linear region for hot-swap, e-fuse, in-rush current limiter, and active OR-ing applications where the device must operate in saturation for extended periods. Key differentiating features include a maximum pulsed drain current of 10.2 A at VDS=56 V and tp=10 ms (SOA-anchored linear-mode rating), a maximum silicon-limited drain current of 289 A, and a package-limited current of 120 A. The PG-TO263-3 package supports 313 W power dissipation at Tc and is qualified for surface-mount reflow assembly. The OptiMOS 5 cell design achieves low gate charge and low figure-of-merit (FOM = RDS(on) × Qg), reducing switching and conduction losses. Architecturally, the device uses Infineon's latest-generation trench MOSFET cell optimized for linear-mode ruggedness; the wide SOA is achieved through uniform cell pitch and carefully tuned body-diode characteristics. The combination of 2.0 mΩ RDS(on) and broad SOA enables designers to replace multiple paralleled MOSFETs or bulky mechanical solutions with a single device in many hot-swap and battery-protection topologies. Typical applications include 48 V telecom hot-swap controllers, server and data-center OR-ing FETs, battery management system (BMS) protection, e-fuse circuits, motor-drive brake circuits, and industrial load-switching where in-rush current limiting is required. The D2PAK footprint is compatible with standard TO-263 land patterns and supports high-current PCB designs. When designing with this part, derate continuous current to 120 A (package-limited) in real layouts and validate SOA against worst-case transient thermal conditions using the manufacturer's SOA curves. The wide SOA allows sustained operation at high VDS, but junction temperature must stay below 175 °C and thermal design must account for board-mounted RthJA. This page synthesizes distributor pricing, drop-in alternatives from the same OptiMOS 5 Linear FET family, and practical design notes not found in the manufacturer datasheet alone.
IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS
The Infineon IPB020NE7N3GATMA1 is a 75V N-channel power MOSFET rated for 120A continuous drain current and 300W power dissipation, housed in a surface-mount PG-TO263-3 (D²PAK) package. Built on Infineon's OptiMOS 3 technology platform, the device features an ultra-low typical on-state resistance of 2.0 mΩ (per the part number code "020") at VGS=10V, making it one of the lowest-RDS(on) parts in its voltage class. The drain-source breakdown voltage of 75V supports 48V telecom, battery, and motor-drive rails with substantial design margin. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or switch high currents at high speeds in power-conversion circuits. It sits in the broader hierarchy of power discretes: MOSFET -> transistor -> discrete semiconductor -> semiconductor device. N-channel enhancement-mode MOSFETs such as the IPB020NE7N3GATMA1 are the workhorse of high-current switching applications because their majority-carrier conduction yields lower switching losses than bipolar alternatives, and they require only a gate-drive voltage rather than continuous base current. Key features include the very low 2.0 mΩ maximum RDS(on) at VGS=10V, avalanche-rated single-pulse robustness for unclamped inductive switching environments, and a logic-level-compatible gate threshold (typical VGS(th) around 2-3V) suitable for direct MCU or gate-driver control. The D²PAK package provides a tab-connected drain that doubles as a large PCB heatsink footprint, while the surface-mount form factor supports automated assembly. Typical applications include high-current DC-DC synchronous rectification in 48V telecom and server VRMs, battery protection and load switching in e-mobility and power-tool packs, motor drive H-bridges and three-phase inverter low-side switches, and hot-swap / OR-ing controllers in industrial redundant supplies. In each, the low RDS(on) directly cuts conduction loss and improves system efficiency at full load. When designing with this device, ensure the gate-drive voltage reaches the full 10V enhancement level and that the PCB copper area under the D²PAK tab is sized to keep junction temperature below the maximum rating. The 300W power dissipation figure is a Tc-rated value and must be thermally verified against the actual PCB layout. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
The Infineon IPB021N10NM5LF2ATMA1 is an N-channel OptiMOS 5 Linear FET 2 in a 100V class, delivering 2.1 mΩ maximum on-state resistance with 176A continuous drain current capability, packaged in a surface-mount PG-TO263-3-2 (D2PAK) outline for high-current hot-swap and battery-management applications. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch where the gate voltage modulates conduction between drain and source. Linear FETs are a MOSFET sub-class engineered with a deliberately enlarged safe-operating area (SOA) so they can pass load current in the linear (unsaturated) region without entering thermal runaway — unlike switching MOSFETs, which are designed for full-on / full-off saturation operation. Linear FETs sit within the broader discrete-semiconductor hierarchy: MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor, and are commonly used for inrush-current limiting and battery protection. Key features include an ultra-low R_DS(on) of 2.1 mΩ at 10V gate drive, continuous drain current of 30A at 25°C ambient (176A at 25°C case), pulsed capability suited to hot-swap transients, avalanche-rated body diode, and a linear SOA optimized for sustained DC operation. The PG-TO263-3-2 package offers a low thermal resistance path via its exposed tab, dissipating 3.8 W on the PCB side and up to 375 W with case cooling. Architecturally, this part uses Infineon's OptiMOS 5 trench-gate process with an enlarged die optimized for linear-mode DC current. The wide SOA is achieved through uniform cell distribution and a robust gate-oxide design that prevents localized hot-spotting when the device operates in the active region during pre-charge or current-limit phases. Typical applications include hot-swap controllers in 48V telecom and server systems, battery-management system (BMS) charge/discharge FETs, e-fuse circuits, DC load switches, and industrial power tools. Its linear SOA makes it ideal for transient inrush events where a switching MOSFET would otherwise fail thermally. A critical design tip: paralleling multiple IPB021N10NM5LF2 units requires matched R_DS(on) devices and shared gate-drive resistors to suppress parasitic oscillation; otherwise the unit with the lowest threshold will carry disproportionately more linear current and trigger premature SOA failure. This page consolidates distributor pricing, drop-in same-package alternatives, and practical design notes — content not found together on the manufacturer datasheet — to accelerate part selection and PCB bring-up.
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
The Infineon IPB024N10N5ATMA1 is a 100 V N-channel power MOSFET built on Infineon's OptiMOS 5 process, offering an ultra-low RDS(on) of 2.4 mΩ typical in a surface-mount PG-TO263-7 (D2PAK-7) package. It is rated for continuous drain current of 180 A at case temperature and 250 W power dissipation, making it one of the lowest-resistance 100 V FETs in its class. The part is particularly engineered for high-current telecom, server, and battery-protection applications where conduction losses dominate total power dissipation. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field on the gate to control current flow between drain and source terminals. Within the broader component taxonomy, this device belongs to the discrete MOSFET family, which itself is a subcategory of discrete semiconductors, ultimately classified under power semiconductors. The N-channel enhancement-mode variant (the most common topology) requires a positive gate-source voltage (VGS(th) typically in the 1-3 V range) to turn on, while the underlying OptiMOS 5 trench technology minimizes both on-state resistance and gate charge, achieving figures of merit (FOM) that previous planar generations could not match. Key specifications include 100 V drain-source breakdown voltage (VDS), 2.4 mΩ maximum RDS(on) at VGS=10 V, gate charge (Qg) optimized for fast switching, and a low thermal resistance path via the D2PAK-7 surface-mount package with an exposed die-attach pad. The ATMA1 suffix indicates Tape & Reel packaging on a 13-inch reel for high-volume SMT assembly. The part's low Qrr body-diode reverse recovery further supports synchronous rectification topologies where dead-time losses matter. The OptiMOS 5 technology platform uses an advanced shielded-gate trench cell structure that shrinks die area for a given RDS(on) target and reduces internal capacitances (Ciss, Coss, Crss) compared to OptiMOS 3 and earlier generations. The result is a MOSFET that simultaneously lowers conduction loss (lower RDS(on)), switching loss (lower Qg and Qoss), and thermal resistance, enabling higher power density in telecom and server SMPS designs without increasing switching frequency-driven EMI. Typical applications include synchronous rectification in 48 V telecom bus converters, OR-ing and hot-swap controllers in server power shelves, battery protection circuits in 48 V eMobility and energy storage systems, high-current motor drive stages in industrial equipment, and DC load switching in solar combiner boxes. The 100 V rating provides sufficient margin above the 48 V telecom bus for transient suppression requirements. Compared with predecessor OptiMOS 3 parts at the same voltage class, the IPB024N10N5ATMA1 claims roughly 22% lower RDS(on) in the same D2PAK-7 footprint, enabling direct upgrades. When designing with this device, ensure that the gate driver can source and sink the required peak gate current to charge and discharge the gate capacitance within the target switching interval, and verify that the PCB layout keeps the high-current source-power loop area minimized. Use the exposed pad as the primary thermal path; inadequate copper area on the drain tab will throttle continuous current well below the 180 A rating. This page synthesizes distributor pricing, drop-in alternatives in the same D2PAK-7 footprint, application recommendations, and practical design notes that complement - and in some cases go beyond - what the manufacturer datasheet alone provides.
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
The Infineon IPB025N10N3GATMA1 is a 100V N-channel OptiMOS 3 power MOSFET housed in a PG-TO263-7 (D2PAK-7) surface-mount package with a tab/lead 6+tab pinout. It delivers continuous drain current up to 180 A at Tc and power dissipation of 300 W at Tc, with an ultra-low typical on-resistance of 2.5 mΩ at VGS=10V, ID=100A, targeting high-efficiency, high power-density SMPS designs. An N-channel MOSFET is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage inverts the surface of an n-type epitaxial region to form a conducting channel between source and drain. Within the power-management taxonomy, MOSFETs sit under transistors -> discrete semiconductors, and the OptiMOS 3 family from Infineon represents a third-generation trench-FET platform optimised for both RDS(on) and figure-of-merit (FOM). Compared with the prior generation, the OptiMOS 3 IPB025N10N3G delivers roughly a 30% reduction in both RDS(on) and FOM, which translates directly into lower conduction and switching losses. Key features include a 2.5 mΩ typical RDS(on) at 10V VGS, a 3.5V gate-threshold voltage, an input capacitance of 2.58 nF, and a 100V drain-source breakdown that comfortably covers 48V telecom rails, 60V eMobility busbars, and industrial DC bus voltages up to 80V. The D2PAK-7 footprint provides a large metal tab that doubles as both pin 7 (drain) and a low-thermal-resistance path, enabling sustained high-current operation with proper PCB copper area. The OptiMOS 3 trench architecture combines a narrow, heavily-doped cell pitch with a low-resistance source metallisation to minimise both conduction losses (low RDS(on)) and switching losses (low Qg, low Qgd). This dual-loss reduction is what gives the IPB025N10N3G its strong position in high-frequency SMPS, where every milliohm of RDS(on) saved converts into measurable efficiency gains at full load. Typical applications include synchronous rectification in 48V-to-12V point-of-load converters, high-current OR-ing and hot-swap controllers in telecom rectifiers, motor-drive half-bridges for e-bike and small EV traction stages, Class-D audio amplifier output stages, and industrial switched-mode power supplies where high efficiency at partial loads is critical. When designing with this part, size the gate-drive voltage to 10V (logic-level FPGAs/MCUs will need a gate driver) and minimise the source-lead inductance to prevent unintended turn-on from dv/dt. Use a Kelvin-source connection where possible to keep the gate-drive loop short and clean. This page synthesises distributor pricing, drop-in alternatives from the same Infineon OptiMOS family and competitors, and practical design notes not found in the manufacturer datasheet alone.
IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΩ | Infineon
The Infineon IPB027N10N3GATMA1 is an N-channel 100V OptiMOS 3 power MOSFET delivering 120A continuous drain current (Tc) and 300W power dissipation in a PG-TO263-3 (D2PAK) surface-mount package. Its headline parameters include a maximum drain-source voltage of 100V, a continuous drain current of 120A at Tc, and an ultra-low typical on-resistance of 2.7mΩ at VGS=10V, positioning it among the lowest-RDS(on) 100V parts in its class. The OptiMOS 3 generation targets high-efficiency, high-power-density SMPS designs. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current between drain and source when a sufficient gate-source voltage is applied. MOSFETs sit within the broader taxonomy: transistor -> discrete semiconductor -> power semiconductor -> power management component. The OptiMOS family specifically addresses synchronous rectification, primary-side switching, and OR-ing applications where low conduction loss and high switching speed directly improve system efficiency. Key features include an industry-leading RDS(on) of 2.7mΩ typical at 10V VGS, an avalanche-rated single-pulse body-diode ruggedness, and a low figure-of-merit (FOM) that reduces switching losses. The PG-TO263-3 (D2PAK) package provides a low thermal resistance (~0.5°C/W junction-to-case) enabling direct PCB-mount heatsinking without isolating pads. Compared to the previous generation, this family achieves a 30% reduction in both RDS(on) and FOM according to Infineon marketing materials. Typical applications include telecom 48V primary-side switching, server and telecom OR-ing, synchronous rectification in high-current SMPS, motor drive H-bridges up to 48V, and hot-swap controllers in distributed power architectures. The wide safety margin (100V VDS max vs. 48V nominal bus) provides ample headroom for transient voltage spikes on inductive loads. When designing with this device, ensure the gate drive voltage reaches the full 10V to minimize RDS(on); a 4.5V gate at high current could double conduction losses. The exposed tab must be soldered to a sufficient copper pour (typically >1 sq inch) to keep junction temperature within the 175°C rating under worst-case load.
IPB031N08N5ATMA1 - 80V 120A OptiMOS 5 N-Channel MOSFET | Infineon
The Infineon IPB031N08N5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 80V technology platform, housed in a surface-mount PG-TO263-3 (D2PAK) package. The device is rated for 80V VDS, 120A continuous drain current (Tc), and 167W power dissipation (Tc), with a maximum on-resistance of 3.1 mOhm at VGS=10V. It is offered as a Tape & Reel variant (-ATMA1 suffix) and is targeted at high-current switching applications in telecom and server power architectures. A power MOSFET is a voltage-controlled semiconductor switch that converts an input gate-source voltage into a low-resistance conduction path between drain and source. Within the broader taxonomy it sits as a member of the discrete MOSFET family, itself a subset of power transistors and ultimately the discrete semiconductor category. OptiMOS 5 is Infineon's fifth-generation trench MOSFET platform, optimized for low RDS(on) per unit silicon area, low gate charge (Qg), and low Figure-of-Merit (FOM = RDS(on) x Qg) to minimize both conduction and switching losses. Key performance highlights include a maximum RDS(on) of 3.1 mOhm, a 120A continuous drain rating (Tc), and a 167W power dissipation envelope (Tc). Compared to the previous generation, Infineon quotes a 43% RDS(on) reduction for the OptiMOS 5 80V family, which translates directly into lower conduction loss and higher efficiency in high-current loops. The D2PAK surface-mount package exposes the metal tab for direct PCB heatsink soldering, giving a low thermal resistance path from junction to copper. Architecturally the device uses Infineon's latest trench cell design, which shrinks the per-cell on-resistance without sacrificing ruggedness. The low RDS(on) x Qg figure-of-merit is critical for hard-switched topologies such as buck and totem-pole PFC, where switching loss at the high di/dt edge dominates total dissipation. The 80V rating provides sufficient margin for 48V nominal telecom rails (with transients) and 24V industrial supplies, while the low Rds(on) makes the part attractive for OR-ing, hot-swap, and synchronous rectifier stages. Typical applications include 48V telecom and server power supplies, synchronous rectification in isolated DC-DC converters, hot-swap and OR-ing FETs in redundant -48V/-54V systems, high-current motor drive bridges for industrial automation, and automotive 12V/24V/48V load switching. It is also widely used as the low-side switch in half-bridge and full-bridge converters where its low Qg reduces driver losses. Designers should select the gate-drive voltage carefully: typical VGS(th) is in the 2-3V range, so a 10V drive is recommended for full enhancement and minimum RDS(on). The exposed D2PAK tab must be soldered to a sufficiently large copper pour (typically >=1 oz copper, >=1 sq inch) to keep thermal resistance low; otherwise the 167W Tc rating cannot be realized at reasonable ambient temperatures. This page synthesizes distributor pricing, parametric comparisons, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a one-stop reference for sourcing and qualifying the IPB031N08N5ATMA1.
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
The Infineon IPB037N06N3GATMA1 is an N-channel power MOSFET rated for 60V VDS, 90A continuous drain current (at Tc), 188W power dissipation, and an ultra-low RDS(on) of 3.7 mOhm maximum, built on Infineon's OptiMOS 3 process technology and housed in a surface-mount PG-TO263-3 (D2PAK) package. According to the manufacturer datasheet, the device is optimized for synchronous rectification in switched-mode power supplies (SMPS), solar micro inverters, and fast-switching DC-to-DC converter stages where conduction losses dominate thermal budgets. What is an OptiMOS power MOSFET? OptiMOS is Infineon's family of medium- and low-voltage N-channel power MOSFETs that sit inside the broader power MOSFET category, which itself is part of the discrete semiconductor hierarchy (MOSFET -> transistor -> discrete semiconductor). OptiMOS 3 specifically targets 40V-300V applications with figure-of-merit improvements over earlier generations, reducing both on-state resistance per unit silicon area and gate charge to enable higher switching frequencies and smaller magnetics in switched-mode designs. Key features include 60V drain-source breakdown, 3.7 mOhm maximum on-resistance at VGS=10V, gate threshold in the 2.0V-3.5V range, and avalanche-rated single-pulse capability. The D2PAK (TO-263) surface-mount package provides a low thermal resistance path through its drain tab, which doubles as the PCB mounting pad and serves as the primary heatsinking surface. Architecturally, the IPB037N06N3GATMA1 uses Infineon's strip-cell planar MOSFET layout, which balances low RDS(on) with robust avalanche energy. Compared with older trench generations, OptiMOS 3 retains strong linear-mode ruggedness while pushing switching figures of merit down by roughly 30 percent, making it well suited to hard-switched bridge topologies where both conduction and switching loss matter. Typical applications include synchronous rectification in 48V telecom and server bus converters, solar micro-inverter switch legs, motor-drive H-bridges below 60V bus, hot-swap and OR-ing controllers, and high-current buck/boost stages in industrial PoL designs. The part is also a frequent companion to gate drivers such as the Infineon EiceDriver family and to digital controllers in digitally-controlled SMPS. A key design trade-off: despite the 3.7 mOhm RDS(on), the D2PAK package dissipates substantial heat through its drain tab, so PCB copper-pour area (typically 1 sq inch minimum on each side of the board with thermal vias) is essential for sustained full-current operation. Designers must also respect the SOA curve at high VDS and low duty cycles, where transient thermal impedance dominates. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers select the IPB037N06N3GATMA1 with full context on sourcing, replacements, and PCB thermal strategy.
IPB038N12N3GATMA1 - 120V 120A 3.8mOhm N-Ch OptiMOS | Infineon
The Infineon IPB038N12N3GATMA1 is a 120V N-channel OptiMOS power MOSFET delivering 120A continuous drain current (at Tc) and 300W power dissipation in a surface-mount PG-TO263-3 (D2PAK) package. Built on Infineon's 120V OptiMOS process, it achieves an extremely low typical on-state resistance of 3.8 mOhm while maintaining industry-leading switching speed, making it suitable for high-frequency power conversion stages where conduction and switching losses both matter. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or convert power in switching power supplies, motor drives, and synchronous rectification stages. Within the broader power semiconductor taxonomy, MOSFETs sit alongside IGBTs and GaN FETs as the dominant building blocks of modern switch-mode power conversion. OptiMOS is Infineon's trench MOSFET technology platform, with the 120V class optimized for telecom, server, automotive 48V mild-hybrid, and industrial DC-DC applications where low Rds(on) and low gate charge directly improve system efficiency. The IPB038N12N3GATMA1 features a logic-level compatible gate drive, low gate charge (Qg), and a low thermal resistance package that supports high continuous current. Its D2PAK (PG-TO263-3) footprint is the surface-mount successor to the classic TO-220 through-hole footprint, sharing the same Gate-Drain-Source pinout and enabling direct PCB migration from legacy through-hole designs. The robust avalanche-rated body diode and dv/dt ruggedness further support hard-switched topologies. This part is typically used as the synchronous rectifier or main switch in 48V telecom bus converters, server and datacom DC-DC bricks, motor drive H-bridges, hot-swap / OR-ing controllers, and high-current battery management protection FETs. Its combination of low Rds(on) and small Qg reduces both conduction and switching losses simultaneously, raising overall efficiency in high-frequency SMPS designs. When designing with this MOSFET, always observe the SOA (Safe Operating Area) limits published in the manufacturer datasheet and keep drain-source voltage well below the 120V rating to absorb ringing and transients. The D2PAK footprint provides excellent thermal coupling to the PCB copper, but at 300W (Tc) the heatsinking requirement depends strongly on the application duty cycle and switching frequency. This page synthesizes real distributor pricing, drop-in same-package alternatives, and design considerations not found in the Infineon datasheet alone. As of 2026-09-11, parts are widely available from authorized distributors including DigiKey, Mouser, LCSC, and Octopart.
IPB039N10N3GATMA1 - 100V 160A OptiMOS 3 N-Channel MOSFET | Infineon
The Infineon IPB039N10N3GATMA1 is a 100 V, 160 A N-channel power MOSFET from Infineon's OptiMOS 3 family, housed in a surface-mount PG-TO263-7 (D2PAK-7, 6 leads + tab) package. It is engineered for lowest RDS(on) and highest power density, with 214 W power dissipation at Tc and excellent switching performance targeting switched-mode power supplies, motor drives, and high-current DC-DC converters. A power MOSFET is a voltage-controlled majority-carrier switching transistor used to efficiently switch and amplify DC and low-frequency signals. Within the broader device taxonomy, this part sits in the hierarchy N-channel MOSFET -> power MOSFET -> discrete semiconductor -> transistor. The OptiMOS 3 family specifically targets synchronous rectification and primary-side switching in SMPS, leveraging trench-gate technology to minimize conduction and switching losses simultaneously. Key specifications include a 100 V drain-to-source breakdown voltage (VDS), 160 A continuous drain current at TC, and an extremely low typical on-state resistance RDS(on) of approximately 3.9 mOhm at VGS = 10 V. The gate charge is optimized for high efficiency, with very low Q g and Q gd figures of merit that yield an excellent gate-charge x RDS(on) FOM. The part is rated MSL1 (moisture sensitivity level 1) and is RoHS-compliant plus halogen-free, suiting modern lead-free reflow profiles. Architecturally, the IPB039N10N3GATMA1 uses Infineon's third-generation OptiMOS trench process, which reduces cell pitch and shrinks the die while maintaining avalanche ruggedness. The tab and 6-lead D2PAK-7 footprint give a low thermal resistance path, allowing the 214 W TC dissipation figure to translate into usable continuous current when properly mounted to a PCB copper pour. Typical applications include primary-side switches in 48 V telecom and server DC-DC bricks, secondary-side synchronous rectifiers in telecom and datacom SMPS, solar inverters, motor-control H-bridges for industrial drives, hot-swap and OR-ing controllers, and automotive 12 V/24 V high-current loads. The combination of low RDS(on) and strong avalanche rating also suits battery-protection and e-fuse circuits. When designing with this device, gate-drive voltage of 10 V is recommended for full RDS(on) performance, and the exposed tab must be soldered to a sufficiently large copper area to keep junction temperature within SOA. Designers should also verify dv/dt immunity in hard-switched topologies, as OptiMOS 3 is optimized for soft-switched or moderately hard-switched use. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving procurement and design engineers a single-page reference for selecting and sourcing the IPB039N10N3GATMA1.
IPB042N10N3 G - 100V 100A OptiMOS 3 N-Channel MOSFET | Infineon
The Infineon IPB042N10N3 G is a 100V N-channel OptiMOS 3 power MOSFET rated for 100A continuous drain current (Tc) and 4.2 mOhm maximum on-resistance in a PG-TO263-3 (D2PAK-2) surface-mount package. It delivers excellent switching performance with a 4.2 mOhm RDS(on) at VGS=10V and is qualified for high-frequency switching and synchronous rectification topologies. The device is rated for 175C operating junction temperature and offers superior figure-of-merit (FOM = Qg x RDS(on)). A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used for power conversion. N-channel enhancement-mode MOSFETs are the dominant switching element in switched-mode power supplies (SMPS), motor drives, and DC-DC converters. Within the power semiconductor hierarchy, MOSFETs sit below IGBTs (used at higher voltages) and above load switches and small-signal FETs. OptiMOS is Infineon's trench-technology MOSFET family optimized for low conduction and switching losses. Key features of the IPB042N10N3 G include 100V VDS rating, 4.2 mOhm maximum RDS(on), 100A continuous ID at Tc, 175C maximum junction temperature, Pb-free lead plating, RoHS compliance, and JEDEC qualification for target applications. The low RDS(on) x gate charge FOM reduces both conduction and switching losses simultaneously, which translates directly into higher efficiency and smaller heatsinks in the end product. The D2PAK-2 package supports high-current PCB mounting with a copper tab acting as the drain terminal. The IPB042N10N3 G is designed in Infineon's trench MOSFET cell technology that minimizes cell pitch and on-resistance per unit silicon area. Compared to the next-best competing technology, OptiMOS 3 achieves a 30% reduction in both RDS(on) and FOM, enabling either higher efficiency at the same footprint or the same efficiency in a smaller package. Typical applications include high-efficiency switched-mode power supplies (SMPS), 48V motor control, synchronous rectification in DC-DC converters, solar inverters, and telecom brick converters. Its 100V rating makes it ideal for 48V bus systems where a 100V device provides comfortable transient margin while delivering ultra-low conduction loss at full load. When designing with the IPB042N10N3 G, ensure the gate drive produces 10V VGS for full enhancement; lower gate voltages drastically increase RDS(on). The D2PAK drain tab requires substantial PCB copper area or an attached heatsink to dissipate the 214W rated power. A gate-source resistor (typically 10-100 ohm) prevents parasitic oscillation, and a low-impedance gate driver is recommended for high-frequency switching above 100 kHz. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
The Infineon IPB051N15NM6ATMA1 is a 150 V N-channel OptiMOS 6 power MOSFET in a PG-TO263-3-2 (D2PAK) surface-mount package, delivering 5.1 mOhm typical RDS(on) at 10 V VGS and 51 nC typical gate charge. It is rated for 18 A continuous drain current at TA=25C and 139 A at TC=25C, with power dissipation of 3.8 W (TA) and 234 W (TC). The device belongs to Infineon's OptiMOS 6 150 V 'normal-level' family optimized for both high-frequency and low-frequency switching. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch designed to handle high current and high voltage in power conversion circuits. The 'power' variant differs from small-signal MOSFETs by offering very low on-resistance (RDS(on)) and high drain current capability, enabling efficient switching in DC-DC converters, motor drives, and synchronous rectifiers. MOSFETs sit within the discrete semiconductor hierarchy: transistor -> power transistor -> power MOSFET -> N-channel enhancement-mode MOSFET. Key features of the IPB051N15NM6ATMA1 include ultra-low RDS(on) of 5.1 mOhm at VGS=10 V, a low gate charge of 51 nC that minimizes switching losses, and an Avalanche-rated body diode for ruggedness. The OptiMOS 6 cell platform improves figure-of-merit (FOM = RDS(on) x Qg) by roughly 30% versus the previous OptiMOS 5 generation, reducing both conduction and switching losses simultaneously. The D2PAK package offers a thermal pad that allows direct PCB heat spreading, supporting 234 W dissipation at TC=25C. Typical applications include synchronous rectification in telecom and server SMPS, solar micro-inverters, DC-DC conversion in 48 V automotive and industrial systems, motor drive H-bridges, hot-swap and OR-ing controllers, and battery protection circuits. The 150 V drain-source rating provides ample headroom for 100 V bus systems including PoE, telecom rectifiers, and industrial 96 V battery stacks. Designers should note that for full SOA verification at high currents the case temperature (TC) - not ambient (TA) - is the limiting factor. Always confirm Tj(max)=175C by computing thermal resistance from the PCB layout. Use a low-impedance gate driver (1 Ohm source/sink) to keep dv/dt-induced ringing manageable.
IPB068N20NM6ATMA1 - 200V 68mOhm N-Ch OptiMOS 6 MOSFET | Infineon
The Infineon IPB068N20NM6ATMA1 is a 200 V N-channel power MOSFET from Infineon's OptiMOS 6 family, featuring a maximum drain-source on-resistance of 68 milliohm and continuous drain current of 15.4 A (Ta) / 134 A (Tc), housed in a surface-mount PG-TO263-3-2 (D2PAK) package with tape-and-reel packaging. The part is qualified to deliver 42% lower RDS(on) versus the previous OptiMOS generation and is targeted at high-efficiency switching conversion stages that require robust EMI behavior. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier switch used to commutate current in power-conversion topologies. MOSFETs sit at the lowest level of the discrete-semiconductor hierarchy - below which lie specific N-channel enhancement-mode types, then power-MOSFET technology classes (planar, trench, superjunction, charge-compensation), then discrete semiconductors broadly. OptiMOS 6 represents Infineon's latest charge-compensation trench generation, positioned as a drop-in evolution for designs already specifying the 200 V N-channel voltage class. Key specifications confirmed by the verified distributor data include VDS = 200 V, ID = 15.4 A continuous at TA (with a case-rated 134 A at TC), and power dissipation of 3.8 W (TA) / 300 W (TC). The PG-TO263-3-2 footprint is industry-standard D2PAK, sharing identical pin 1 (gate), pin 2 (drain, tab), pin 3 (source) assignments with every other D2PAK N-channel MOSFET, which makes the part straightforward to second-source within the same 200 V / 60-80 mOhm class. Per Infineon's product page, the device is explicitly qualified for solar, motor-drive, and battery-management-system applications. Architecturally, the OptiMOS 6 die uses charge-compensation trench technology to minimize the RDS(on) x Qg figure of merit. Lower gate charge directly reduces switching losses in hard-switched bridge topologies, while the 42% RDS(on) improvement cuts conduction losses. The combined effect is improved light-load efficiency and cooler operation under continuous stress, both of which are critical in solar inverters and telecom rectifiers. Typical applications include 48 V telecom bus converters, solar micro-inverters, e-bike and light-vehicle motor drives, isolated DC-DC brick converters, and battery management system protection FETs. The part is also well-suited to server auxiliary rails and high-voltage LED lighting drivers. When designing with the IPB068N20NM6ATMA1, attention must be paid to gate-drive voltage (typically 10 V VGS) and to the PCB copper area under the D2PAK tab, which serves as the primary thermal path. Without a sufficient thermal pad the device will derate significantly below its 300 W (TC) capability. The single FET in D2PAK is best paired with low-side half-bridge drivers such as Infineon's 2EDR8258 family or IRS2304SPBF-class parts. This page consolidates distributor pricing, drop-in alternatives, and practical design notes drawn from the manufacturer datasheet and the Infineon product page - information typically scattered across distributor listings and parametric search tools.
IPB072N15N3GATMA1 - 150V 100A N-Ch OptiMOS 3 MOSFET | Infineon
The Infineon IPB072N15N3GATMA1 is a 150V N-channel OptiMOS 3 power MOSFET delivering 100A continuous drain current (Tc) and 300W maximum power dissipation in a surface-mount PG-TO263-3-2 (D2PAK-2) package. It features an ultra-low typical on-resistance of 7.2 milliohms at VGS=10V, an OptiMOS 3 trench process, and a 150V drain-source breakdown rated for AC-DC SMPS, motor drive, and synchronous rectification use. The part is supplied in tape-and-reel packaging with the manufacturer ordering code suffix GATMA1 indicating 1k-piece reel orientation. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device (gate, drain, source) that switches or amplifies power in the kilo- to megahertz range. Within the power-converter hierarchy it sits between the controller IC and the magnetic components; specifically IPB072N15N3GATMA1 belongs to the N-channel enhancement-mode family of trench-gate MOSFETs, descendants of the original planar DMOS, and is engineered to minimize conduction loss (low R_DS(on)) and switching loss (low Q_g, Q_rr) simultaneously. OptiMOS is Infineon's flagship low-voltage-to-high-voltage power-MOSFET platform, competing with Vishay Siliconix TrenchFET, onsemi NTMFS, and STMicroelectronics STripFET families. Key features include: R_DS(on) of 7.2 mOhm typical at VGS=10V and VGS=10V gate drive; avalanche-rated single-pulse energy; optimized intrinsic body diode for low Q_rr and robust commutation; a wide gate-threshold range compatible with 10V standard drive; and a thermally enhanced D2PAK-2 footprint with a tab exposed for direct PCB heatsinking. The PG-TO263-3-2 package (3 pins + tab) supports high continuous current while enabling surface-mount assembly rather than through-hole mounting, reducing assembly cost and improving thermal coupling to the PCB copper pour. The OptiMOS 3 architecture combines a charge-compensated trench cell with a thin wafer process, reducing both on-resistance per unit area and gate charge by roughly 40 percent versus the prior OptiMOS 2 generation. This FOM (figure of merit: R_DS(on) x Q_g) improvement is the headline metric in modern switching-converter design because total loss is a fixed combination of conduction (I^2 x R_DS(on)) and switching (V x I x f x (Q_g+Q_rr)/I_g) contributions. The intrinsic body diode supports synchronous-rectifier operation in continuous-conduction-mode (CCM) PFC and LLC converters without an external anti-parallel diode. Typical applications include AC-DC switched-mode power supplies (SMPS) primary-side switching, telecom 48V hot-swap controllers, synchronous rectification on the secondary side of isolated DC-DC converters, solar micro-inverters and string inverters up to 150V DC bus, and high-current motor drive H-bridges for industrial 24-96V systems. In AC-DC SMPS it functions as either the main primary-side switch (where its 150V rating tolerates 100V rectified mains plus margin) or the secondary-side synchronous rectifier. When designing with this part, use a 10V gate drive and keep the gate-loop layout tight to minimize ringing; gate-source resistors of 10-100 ohm damp the resonance and limit shoot-through. The D2PAK-2 tab must be soldered to a copper pour of at least 1 square inch for continuous 100A operation, and thermal vias under the tab reduce R_thJA from approximately 40 C/W to roughly 15-20 C/W on a standard 4-layer FR-4 board. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPB073N15N5ATMA1 - 150V 114A 7.3mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon IPB073N15N5ATMA1 is a 150 V N-channel power MOSFET built on Infineon's OptiMOS 5 process technology, delivering 114 A continuous drain current and an ultra-low RDS(on) of 7.3 mΩ maximum, packaged in a surface-mount PG-TO263-3-2 (D2PAK-3L) footprint. The "ATMA1" suffix indicates tape-and-reel packaging for high-volume assembly, while "IPB" identifies the D2PAK family within Infineon's discrete MOSFET portfolio. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device that conducts current between drain and source when a sufficient gate-source voltage is applied. It belongs to the hypernym hierarchy MOSFET -> FET -> discrete semiconductor -> power semiconductor. N-channel enhancement-mode MOSFETs like the IPB073N15N5 are the workhorse switches of high-current DC-DC conversion, motor drive, and synchronous rectification because their low on-resistance and fast switching enable efficient power transfer with minimal conduction and switching loss. Key features of this part include an industry-leading 7.3 mΩ maximum on-resistance at VGS=10 V, gate charge (Qg) optimized for hard-switching topologies, a logic-level capable gate threshold range, and a 150 V drain-source breakdown that comfortably covers 48 V telecom, solar, and e-mobility bus rails. The D2PAK package provides a creepage distance and thermal pad suitable for high-current surface-mount assembly with PCB copper heatsinking. OptiMOS 5 technology uses Infineon's latest superjunction (SJ) trench architecture, balancing low RDS(on) per die area, low gate charge, and low output capacitance (Coss) to deliver a Figure-of-Merit (FOM = RDS(on) × Qg) that significantly improves over prior OptiMOS generations. This yields reduced driver losses, cooler operation at given load, and higher frequency capability for compact magnetics designs. Typical applications include 48 V telecom and solar converters, low-voltage motor drives such as forklifts and e-scooters, synchronous rectification in server and telecom DC-DC bricks, hot-swap and OR-ing controllers, and industrial UPS systems. The wide 150 V rating also makes it suitable for 100 V PoE and battery management applications. When designing with this MOSFET, ensure the gate driver can source/sink sufficient peak current for fast switching without exceeding the VGS(max) of ±20 V. PCB layout must minimize the power-loop and gate-loop inductance to control voltage overshoot and EMI; the D2PAK tab should be soldered to a copper pour sized for the application dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPB081N06L3GATMA1 - 60V 50A OptiMOS 3 N-Channel MOSFET | Infineon
The Infineon IPB081N06L3GATMA1 is an N-channel power MOSFET rated at 60V VDS and 50A continuous drain current (Tc), built on Infineon's OptiMOS 3 process technology and housed in a surface-mount PG-TO263-3 (D2PAK) package. The die delivers an ultra-low typical on-resistance of 8.1 mOhm at VGS=10V, 79W maximum power dissipation, and is qualified for industrial-grade operating temperatures. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate current in power conversion circuits. As a member of the N-channel enhancement-mode family, this device requires a positive gate-source voltage to conduct and belongs to the broader hierarchy: power MOSFET -> discrete semiconductor -> power management component. OptiMOS 3 is Infineon's third-generation low-voltage power MOSFET platform, optimized for low RDS(on) per unit silicon area, fast switching, and low gate charge to maximize converter efficiency at high switching frequencies. Key specifications include a typical gate threshold voltage around 2.1V (1.2V min, 2.6V max), continuous drain current of 50A at Tc=25C, pulsed current capability suitable for motor inrush, and avalanche-rated single-pulse energy for unclamped inductive switching robustness. The D2PAK package exposes a large metal tab for direct PCB copper heat spreading, enabling sustained high current with proper footprint design. The IPB081N06L3GATMA1 is a logic-level optimized variant capable of full enhancement from 4.5V gate drive, simplifying interface to 5V microcontrollers and gate drivers. The OptiMOS 3 cell architecture minimizes gate charge (Qg typically in the low-to-mid tens of nC), reducing driver losses and enabling switching frequencies above 100 kHz in synchronous buck, buck-boost, and half-bridge topologies. Typical applications include 48V automotive subsystems, server and telecom secondary-side ORing and hot-swap, brushless DC motor drives, synchronous rectification in isolated DC-DC converters, and high-current load switching in industrial automation. The 60V rating provides ample headroom for 24V/28V bus operation with inductive transient margin. When designing with this part, the exposed tab MUST be soldered to a copper pour area sized to keep junction temperature below 150C under worst-case load. The gate drive should source/sink at least 10V peak with adequate peak current (Qg/dt) to avoid Miller-induced turn-on losses. For paralleled devices, matched gate resistors and Kelvin-source connections are recommended. This page consolidates distributor pricing tiers, drop-in D2PAK alternatives, and PCB layout considerations not found in the standalone Infineon datasheet, giving engineers an actionable cross-reference in a single view.
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
The Infineon IPB100N04S4H2ATMA1 is a 40V N-channel OptiMOS-T2 power MOSFET rated for 100A continuous drain current (Tc) and 115W maximum power dissipation in a surface-mount PG-TO263-3-2 (D2PAK) package. It belongs to Infineon's OptiMOS-T2 40V family, offering the world's lowest RDS(on) at 40V alongside highest current capability and lowest switching/conduction losses for maximum thermal efficiency. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an insulated gate to modulate conduction between drain and source terminals. N-channel enhancement-mode MOSFETs conduct when a positive gate-source voltage is applied, and the 40V class is widely used as the lowest-cost, lowest-RDS(on) switch for sub-24V bus systems including 12V/24V automotive, 12V industrial, and USB-PD loads. Power MOSFETs sit within the hierarchy: power MOSFET -> discrete semiconductor -> switching device -> power management, and the D2PAK package family is the surface-mount successor to TO-220 for high-current switching. Key features of the IPB100N04S4H2ATMA1 include an ultra-low RDS(on) of 2.4 mΩ typical at VGS=10V, 100% avalanche-tested ruggedness, AEC-Q101 automotive qualification, MSL1 rating up to 260°C peak reflow, and 175°C maximum operating junction temperature. The OptiMOS-T2 technology uses a trench-gate structure optimized for both low conduction loss and fast switching, enabling higher-frequency operation than previous-generation planar MOSFETs. The D2PAK footprint supports high-current PCB layouts with substantial copper area for thermal spreading. Typical applications include automotive motor control (EPS, fuel pumps, water pumps), 12V/24V solenoid drivers, DC-DC converter synchronous rectification, battery management protection MOSFETs in 12V Li-ion packs, and high-current load switches in industrial automation. The AEC-Q101 qualification makes it directly suitable for automotive electronics under-the-hood and chassis domains. When designing with this part, prioritize copper area on the drain tab for thermal dissipation, keep gate drive rise/fall times below 50ns to avoid shoot-through in half-bridge topologies, and respect the avalanche energy rating during unclamped inductive switching events. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPB100N12S305ATMA1 - 120V 100A OptiMOS N-MOSFET | Infineon
The Infineon IPB100N12S305ATMA1 is an N-channel enhancement-mode OptiMOS power MOSFET rated at 120 V drain-source voltage and 100 A continuous drain current (Tc), with 300 W power dissipation and a typical on-resistance of 4.8 mOhm, housed in a surface-mount PG-TO263-3-1 (D2PAK) package. It belongs to Infineon's OptiMOS automotive-grade family and is qualified to AEC-Q101 for automotive reliability, with MSL1 moisture rating and 175 C maximum operating junction temperature. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch or amplify power in circuits. N-channel enhancement-mode MOSFETs require a positive gate-to-source voltage (VGS(th)) to turn on, and the OptiMOS family from Infineon uses advanced trench-cell silicon technology to minimize conduction losses (low RDS(on)) and switching losses (low Qg and Qrr). Within the broader power semiconductor taxonomy, this device sits in the hierarchy: power MOSFET -> discrete semiconductor -> N-channel MOSFET -> automotive-qualified MOSFET, and is typically used where moderate voltage (12 V/24 V/48 V automotive bus) and high current capability are required. Key features include 185 nC total gate charge (Qg) for fast switching transitions, 100% avalanche-tested ruggedness, and a green-product (RoHS-compliant) bill of materials. The OptiMOS automotive process is designed for high pulse-current handling, low thermal resistance through the D2PAK tab, and reliable operation under harsh temperature and vibration conditions typical of under-hood automotive environments. Typical applications include automotive 12 V and 24 V high-current switching, electric power steering (EPS), brake systems, electronic stability control (ESC), DC-DC converters in mild-hybrid (48 V) systems, motor drives (H-bridge low-side switches), solenoid drivers, and battery protection/disconnect circuits. The low RDS(on) minimizes conduction losses at 100 A continuous, reducing heatsink requirements. Designers should note that the PG-TO263-3-1 package requires a properly soldered tab to the PCB copper pour to achieve the rated 300 W dissipation; thermal vias under the tab are critical. The 4.8 mOhm RDS(on) is typically specified at VGS = 10 V; gate drive at 4.5 V is supported but with significantly higher on-resistance. Ensure VGS stays below the +/-20 V absolute maximum to avoid oxide rupture. This page synthesizes distributor pricing, drop-in alternatives (same-brand Infineon OptiMOS family and cross-brand equivalents), practical design notes, and AEC-Q101 compliance context not consolidated in a single manufacturer document.
IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5
The Infineon IPB100N12S305ATMA2 is an N-channel power MOSFET from the OptiMOS 5 120V family, rated at 120 V VDS, 100 A continuous drain current at Tc, and 300 W power dissipation, housed in a surface-mount PG-TO263-3-2 (D2PAK) package. It is qualified to AEC-Q101 for automotive reliability, with a maximum junction temperature of 175 °C and an avalanche energy rating of 1445 mJ that reflects the rugged automotive-grade design. Background: An N-channel power MOSFET is a voltage-controlled majority-carrier device used as a high-efficiency switch in power-conversion stages. Within the semiconductor taxonomy it sits below IGBTs and SiC MOSFETs as the workhorse building block for synchronous rectification, motor drive, and DC-DC conversion. The Infineon OptiMOS 5 platform targets 40 V to 300 V applications where low RDS(on), low gate charge, and high avalanche ruggedness must coexist in a single footprint. Key features include a typical RDS(on) around 4.8 mΩ at VGS = 10 V, a 120 V drain-source breakdown voltage, and a logic-level compatible gate threshold that allows direct drive from 12 V battery or 5 V MCU-derived gate drivers. The TO263-3-2 package offers a low thermal resistance path from die to PCB copper pad, enabling sustained 100 A operation with appropriate board layout. Architecturally the cell uses Infineon's advanced trench technology to shrink the on-resistance per silicon area while keeping switching losses low. Compared with older planar generations, OptiMOS 5 reduces output charge (Qoss) and gate charge (Qg) - metrics that translate directly into lower switching losses at high PWM frequencies. Typical applications include 12 V and 48 V automotive systems such as electric power steering, braking, and DC-DC converters, as well as industrial SMPS synchronous rectification stages, e-fuse and hot-swap circuits, and high-current motor drives. The 120 V rating comfortably covers 24 V and 48 V bus transients. When designing with this part, ensure the gate driver can source and sink at least 1-2 A peak to charge and discharge the gate quickly. Place the source-return connection of the gate driver close to the source pin to avoid parasitic turn-on, and add a TVS or RC snubber if the application involves inductive switching above 60 V.
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
The Infineon IPB107N20N3GATMA1 is an N-Channel OptiMOS 3 power MOSFET rated at 200V VDS, 88A continuous drain current (Tc), and 300W maximum power dissipation (Tc), housed in a surface-mount PG-TO263-3 (D2PAK) package with an exposed tab for PCB thermal dissipation. The device delivers a typical on-state resistance of approximately 9.6 milliohm at VGS = 10V, making it one of the lowest-RDS(on) parts in its 200V OptiMOS 3 family. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch used for fast switching and high-current load management. MOSFETs sit within the broader taxonomy of discrete semiconductors -> transistors -> FETs -> power MOSFETs. The OptiMOS 3 family is Infineon's benchmark technology for high-frequency, high-efficiency switching applications where low conduction and switching losses directly improve system efficiency. Key features of the IPB107N20N3GATMA1 include a 200V drain-source breakdown voltage optimized for 48V-bus systems, an ultra-low on-resistance of ~9.6 milliohm at 10V VGS that minimizes I²R conduction loss, a 300W power dissipation rating at 25°C case temperature, and a surface-mount D2PAK package that supports high-density PCB layouts while maintaining low thermal resistance through its exposed metal tab. The OptiMOS 3 technology platform also provides low gate charge and low reverse-recovery charge for fast switching at high frequencies. The part is built on Infineon's OptiMOS 3 trench MOSFET process, which uses a vertical trench gate structure to maximize channel density and minimize cell pitch. This architecture yields the lowest figure-of-merit (FOM = RDS(on) x Qg) in its voltage class, enabling synchronous rectification stages and primary-side switches in switched-mode power supplies to operate above 100 kHz without unacceptable switching loss. Typical applications include synchronous rectification in 48V telecom and server power systems, primary-side switches in DC-DC converters, uninterruptible power supplies (UPS), and inverter stages for DC motor drives. The 200V rating also provides ample headroom for 100V-150V industrial bus rails. When designing with this device, ensure sufficient PCB copper area on the D2PAK tab to keep the junction temperature within safe limits - at 300W Tc rating, the actual continuous current must be thermally derated to ambient conditions. Use a gate driver capable of sourcing/sinking at least 2 nC of gate charge in under 50 ns to exploit the device's switching speed.
IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon
The Infineon IPB110P06LMATMA1 is a P-channel power MOSFET rated at 60 V VDS and 100 A continuous drain current (Tc) in a 3-pin PG-TO263-3-2 (D2PAK) surface-mount package, with 300 W maximum power dissipation at Tc. It is part of Infineon's OptiMOS P-channel family, targeted at medium and low-power applications requiring logic-level gate drive and low on-state resistance. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically an oxide layer) to modulate the conduction channel between source and drain terminals. The P-channel variant conducts when the gate is pulled below the source potential, making it well-suited to high-side switching on the positive rail without needing a charge pump or bootstrap circuit. Within the broader taxonomy, MOSFETs sit under discrete semiconductors, alongside IGBTs, BJTs, and JFETs. The OptiMOS family specifically emphasizes low RDS(on) per unit silicon area, low gate charge (Qg), and low figure-of-merit (FOM = RDS(on) x Qg), reducing conduction and switching losses. Key features include a maximum on-state resistance of 11 mOhm at VGS = 10 V and ID = 100 A, a maximum gate-threshold voltage of 2 V (typ. ~1.5 V), and a logic-level-compatible drive that simplifies interface to 3.3 V / 5 V microcontrollers. The D2PAK (TO-263) package provides a large exposed metal tab for PCB heatsinking, achieving low thermal resistance from junction to case. The part is rated for an operating junction temperature up to 175 C, supporting demanding automotive and industrial environments. Architecturally, the IPB110P06LM uses Infineon's advanced trench MOSFET process, which maximizes channel density per unit area while keeping gate charge low. This combination yields a low FOM that improves efficiency in both conduction (lower RDS(on)) and switching (lower Qg for faster edge rates) regimes, important for SMPS and hot-swap designs. Typical applications include battery management (BMS) charge/discharge switches, load switches in 12 V/24 V systems, reverse-polarity protection circuits, motor drive H-bridges (high-side position), and hot-swap controllers in telecom/datacom racks. The logic-level gate threshold makes it directly compatible with GPIO-driven designs without a dedicated gate driver IC. A primary design consideration is thermal management. With 11 mOhm RDS(on) at 100 A, full-load conduction loss is around 110 W, requiring a substantial copper pour or external heatsink on the D2PAK tab. Designers should also include a gate-source resistor (typ. 10-100 kOhm) to prevent inadvertent turn-on from Miller-coupling transients, and a TVS or snubber across drain-source for inductive loads.
IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon
The Infineon IPB120N04S402ATMA1 is an N-channel enhancement-mode power MOSFET from the OptiMOS-T2 family, rated 40 V VDS, 120 A continuous drain current (at TC), and 158 W power dissipation (at TC), housed in a surface-mount PG-TO263-3 (D2PAK) package. The device targets automotive electric power steering (EPS) motor control and other high-current 12 V/24 V bus switching roles, where very low on-state resistance and high current capability are required from a small PCB footprint. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to conduct current between source and drain. MOSFETs sit within the discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> active component. Within power conversion systems, a low-RDS(on) N-channel MOSFET like the IPB120N04S402ATMA1 enables high-efficiency synchronous rectification in DC-DC converters, high-side/low-side motor drive half-bridges, and OR-ing/redundant power paths where conduction losses directly determine system efficiency. Key features of the IPB120N04S402ATMA1 include the automotive-grade OptiMOS-T2 silicon platform with what Infineon describes as the world's lowest RDS(on) at 40 V and highest current capability in its class, plus 100% avalanche-tested ruggedness, low switching and conduction losses for highest thermal efficiency, and a robust package design. The D2PAK (PG-TO263-3) footprint provides a low thermal-resistance path via the exposed tab, supporting 158 W dissipation at TC and AEC-Q101 automotive qualification. Architecturally, the device is a trench-gate N-channel enhancement-mode MOSFET, optimized for very low on-state resistance and high pulse-current handling. AEC-Q101 qualification, MSL1 moisture sensitivity up to 260 °C peak reflow, and a 175 °C maximum operating junction temperature qualify it for under-hood automotive environments. The combination of high current rating and low RDS(on) reduces conduction losses and simplifies thermal design in high-power switching. Typical applications include EPS (electronic power steering) motor control in automotive systems, DC-DC converter synchronous rectification, high-current load switches in 12 V/24 V automotive buses, battery protection / reverse-polarity protection switches, and motor drive half-bridges for pumps, fans, and e-compressors. The 40 V rating also covers 24 V industrial bus systems with adequate transient margin. When designing with this part, ensure the gate driver can source/sink sufficient peak current (often several hundred mA to several amps) to charge and discharge the gate quickly, minimizing switching loss. Layout must keep the high-current loop (drain-source) area small to limit parasitic inductance that can cause VDS overshoot and ringing. Use a low-impedance gate-drive return path to prevent parasitic turn-on from dv/dt. This page synthesizes distributor pricing from DigiKey/Mouser/Octopart, drop-in compatible same-package alternatives, and practical thermal/layout design notes not aggregated in the manufacturer datasheet.
IPB120N10S405ATMA1 - 100V 120A 5mΩ N-Ch MOSFET | Infineon
The Infineon IPB120N10S405ATMA1 is an N-channel 100 V enhancement-mode power MOSFET delivering 120 A continuous drain current (Tc) with an ultra-low typical on-resistance of 5 mΩ, housed in a surface-mount PG-TO263-3 (D2PAK) package rated for 190 W power dissipation. According to the Infineon datasheet, this part belongs to the OptiMOS-T2 100V family and is qualified to AEC-Q101 for automotive applications. An N-channel power MOSFET is a voltage-controlled semiconductor switch in which a positive gate-source voltage creates an n-type conduction channel between the drain and source terminals. Power MOSFETs sit in the discrete semiconductor hierarchy (MOSFET -> transistor -> discrete semiconductor -> power semiconductor), where they are the workhorse of switching power conversion, motor drive, and load switching applications due to their fast switching, easy gate drive, and zero static gate current. Key differentiating specifications include a maximum drain-source voltage VDS of 100 V, continuous drain current ID of 120 A at case temperature, pulsed avalanche current rated, and a typical R_DS(on) of 5 mΩ at VGS=10 V. The PG-TO263-3 package provides a tab-mount thermal path with low junction-to-case thermal resistance, enabling compact high-current designs. The device is 100% avalanche-tested and rated MSL1 up to 260 °C peak reflow, suitable for lead-free reflow profiles. The MOSFET uses Infineon's advanced trench-cell process technology, which minimizes on-state losses while maintaining robust SOA and avalanche capability. The 100% avalanche rating indicates each device passes a single-pulse avalanche energy test during production screening, a strong indicator of ruggedness in unclamped inductive switching events such as solenoid or motor drive. Typical applications include automotive 12 V/48 V high-current switching (e.g., EPS, electric power steering, ABS modules), DC-DC converter primary-side switches, motor drive H-bridges, solenoid drivers, and battery protection disconnect switches. The AEC-Q101 qualification makes it a strong fit for automotive ECU power stages. When designing with this part, observe the safe operating area carefully at high VDS and high ID: a momentary short-circuit on a 48 V bus can dissipate hundreds of watts. Use a low-inductance gate-drive loop with a 10 Ω gate resistor to control ringing and dv/dt, and ensure the PCB copper pour under the D2PAK tab is sized to keep steady-state junction temperature below 150 °C. This page synthesizes distributor pricing across 9 channels, AEC-Q101-qualified drop-in alternatives in the same PG-TO263-3 footprint, and practical thermal/SOA design guidance not present in the bare datasheet.
IPB120P04P404ATMA1 - 40V P-Ch 120A 3.5mΩ OptiMOS | Infineon
The Infineon IPB120P04P404ATMA1 is a P-channel OptiMOS-P2 power MOSFET rated for 40 V drain-to-source voltage, continuous drain current of 120 A at Tc, and pulsed capability in the same range, housed in a surface-mount PG-TO263-3 (D2PAK) package. According to Infineon datasheet excerpts aggregated by distributor pages, the part delivers a typical on-state resistance of 3.5 mΩ at VGS = -10 V and ID = -100 A, total gate charge of 205 nC at VGS = -10 V, and reverse transfer capacitance of 14.79 nF at 25 V. The device is qualified to AEC-Q101 for automotive use, supports 175 °C operating junction temperature, is MSL1 rated for 260 °C peak reflow, and is 100 % avalanche tested. A P-channel power MOSFET is a voltage-controlled minority-carrier device in which a negative gate-source voltage inverts the P-channel surface to conduct majority-carrier hole current between source and drain. P-channel MOSFETs sit in the discrete-semiconductor hierarchy as: power MOSFET -> MOSFET (Metal Oxide Semiconductor FET) -> FET -> transistor -> discrete semiconductor. They are valued in high-side load switching because, with source tied to the system positive rail, a simple ground-referenced low-side gate driver can switch the rail without a charge pump or bootstrap, simplifying the gate drive architecture compared to a comparable N-channel device used in the same position. Key differentiating features of the IPB120P04P404ATMA1 include its very low RDS(on) of 3.5 mΩ at -10 V VGS, enabling conduction losses below 1 W at 30 A continuous load; its AEC-Q101 automotive qualification supporting under-the-hood and body-electronics deployments; its 175 °C maximum junction temperature allowing operation in thermally constrained environments; and its PG-TO263-3 footprint that exposes the die tab for top-side PCB cooling. The OptiMOS-P2 cell technology also reduces gate charge and output capacitance relative to older P-channel generations, allowing faster switching edges at modest driver strength. Technically, the part is a single P-channel enhancement-mode device with built-in body diode, normal VGS(th) level (typical -2 V to -4 V at 340 µA), and Green-package (RoHS-compliant) bill of materials. Its SOA is bounded by 136 W continuous dissipation at Tc and 78 mJ single-pulse avalanche energy, meaning repetitive avalanche must be thermally derated. Typical applications include automotive 12 V/24 V high-side load switches (e.g., ECU power, body control modules), DC-DC converters using P-channel high-side switches, motor drive H-bridges and reverse-battery protection blocks, hot-swap controllers in 24 V industrial buses, and OR-ing FETs in redundant power architectures. When designing with this part, ensure that the gate is pulled at least 10 V below source during full conduction and that VGS is never allowed to exceed ±20 V. Because it is a P-channel device, gate-source ESD sensitivity is somewhat higher than N-channel equivalents; place a 10 kΩ to 100 kΩ resistor from gate to source to hold the device off during controller reset. This page synthesizes distributor pricing for IPB120P04P404ATMA1, Infineon OptiMOS-P2 family drop-in alternatives in PG-TO263-3, and practical design notes that complement the manufacturer datasheet.