MOSFET
製品 (1294)
IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon
The Infineon IGLT65R035D2ATMA1 is a 650 V enhancement-mode GaN (gallium nitride) power transistor from Infineon's CoolGaN™ G5 TOLT family, housed in a top-side-cooled PG-HDSOP-16-8 surface-mount package. It is rated for 47 A continuous drain current at Tc and 154 W power dissipation, delivering a low on-resistance figure targeted at high-frequency power-conversion stages where silicon MOSFETs lose efficiency. The part is fabricated on Infineon's 200 mm GaN-on-Si production line and integrates an isolated gate structure that allows standard gate-drive ICs to be used without a negative bias supply. An enhancement-mode GaN HEMT (high-electron-mobility transistor) is a wide-bandgap power switch whose two-dimensional electron gas (2DEG) channel conducts only when a positive gate voltage is applied. Compared to silicon MOSFETs and IGBTs, GaN transistors offer lower gate charge (Qg), lower output charge (Qoss), zero reverse-recovery charge (Qrr), and switching speeds one to two orders of magnitude faster, enabling smaller magnetics, higher switching frequencies (100 kHz to >1 MHz), and higher system efficiency (>98% in well-designed LLC and totem-pole PFC stages). The CoolGaN™ G5 generation specifically targets industrial and telecom power-supply designs that require both high reliability and compact form factors. Key features of the IGLT65R035D2ATMA1 include 650 V drain-source blocking voltage, 47 A continuous drain current, 154 W maximum power dissipation, a Kelvin-source pin for low-inductance gate driving, and top-side cooling via a large exposed pad on the upper surface of the HDSOP-16-8 package. The top-cool configuration enables direct attachment to a heatsink or cold plate, removing thermal bottlenecks that constrain bottom-cooled DFN packages in planar layouts. Architecturally, the device uses a normally-off cascode-free GaN-on-Si HEMT with an integrated gate clamp, enabling robust behaviour during transients and simplified gate-drive requirements. The very low Qg × Rds(on) figure of merit (FOM) translates directly into reduced switching losses at high dV/dt, which is critical for hard-switched and soft-switched topologies such as totem-pole PFC, LLC, and active-clamp flyback converters used in server, telecom, and renewable-energy applications. Typical applications include 1 kW to 6 kW AC-DC power supplies using totem-pole PFC, high-density server and hyperscaler power-supply units (PSUs), telecom rectifier modules, solar inverters and energy-storage DC-DC stages, and industrial motor drives. The wide Vds rating also makes it suitable for 380-400 V DC-bus systems found in e-mobility charging and industrial automation. When designing with this part, ensure the gate-drive loop inductance is minimised by routing the gate and Kelvin-source traces as a tightly-coupled differential pair, and place a small ferrite bead or gate resistor (typically 5-15 ohm) close to the gate pin to dampen ringing. The top-side thermal pad should be soldered or thermally-attached to a heatsink; thermal-interface material (TIM) with high conductivity (>5 W/mK) is recommended for best results. This page synthesises distributor pricing, pin-compatible CoolGaN drop-in alternatives, and practical thermal and gate-drive design notes that are not collated in the manufacturer datasheet alone, helping engineers quickly evaluate the IGLT65R035D2ATMA1 for next-generation high-density power-conversion designs.
IGT65R025D2ATMA1 - 650V 70A GaN FET, PG-HSOF-8 | Infineon
The Infineon IGT65R025D2ATMA1 is a 650 V, 70 A N-channel Gallium-Nitride (GaN) power transistor from Infineon's CoolGaN Gen2 (G5) family, packaged in a bottom-cooled surface-mount PG-HSOF-8 case. Designed for high-frequency high-density power conversion, it offers a typical on-state resistance around 25 mΩ at room temperature and supports continuous drain current of 70 A at case, with a power dissipation of 236 W (Tc). It enables higher switching frequencies than Si MOSFETs, reducing magnetics and bulk capacitance, and supports miniaturised form factors with reduced system BOM cost. A GaN power transistor (gallium-nitride HEMT) is a wide-bandgap semiconductor switching device in which an AlGaN/GaN heterostructure forms a high-electron-mobility two-dimensional electron gas channel. Compared with silicon MOSFETs and IGBTs at the same voltage class, GaN FETs deliver lower on-resistance per area, near-zero reverse-recovery charge (Qrr), and dramatically lower gate and output charge (Qg, Qoss), enabling hard-switched topologies from tens of kHz up to multi-MHz with very low switching loss. GaN belongs to the wide-bandgap semiconductor family alongside SiC, sitting above silicon in voltage, frequency, and efficiency capability. Key features of the IGT65R025D2 include enhancement-mode (normally-off) operation with a low gate-threshold around 1.0-1.5 V, a small package inductance from the source-down PG-HSOF-8 land pattern, and a Kelvin-source connection that suppresses gate-loop parasitic inductance. The bottom-cooled package routes heat directly into the PCB copper, allowing top-side PCB space to be used for snubbers, gate drivers, and signal traces. According to the manufacturer datasheet, the device is rated for 650 V drain-source blocking and supports avalanche-robust switching. The internal structure uses Infineon's Gen2 GaN-on-Si 200 mm platform, integrating gate protection, ESD cells, and a source-connected Kelvin pin for clean gate drive. The PG-HSOF-8 source-down footprint allows the user PCB copper to act as both electrical ground and primary thermal interface. Operation is characterised by very low Qg (typically single-digit nC) and Qoss in the tens-of-nC range, which directly enables soft-switched and hard-switched PFC, LLC, and totem-pole PFC topologies at 100-500 kHz. Typical applications include high-density telecom rectifiers (PFC + LLC stage), industrial SMPS with 380/400 V DC link, server and hyperscaler data-centre PSU modules, on-board EV chargers and DC/DC stages for traction auxiliary, solar inverters with high-frequency isolation stages, and motor drives for HVAC compressors. The 650 V rating provides ample margin across 230 V AC PFC outputs and 400 V DC-link rails. When designing with this part, place a 5-10 ohm gate resistor and keep the gate-drive loop tight to the gate-Kelvin source pins. Maintain Vgs within the absolute maximum ratings window (commonly -10 V to +18 V for GaN) and use a negative turn-off bias if the topology risks dv/dt-induced false turn-on. Ensure the PCB top-side keep-out under the device accommodates the bottom-side thermal copper. This page synthesises distributor stock and pricing, drop-in CoolGaN alternatives, application-focused design guidance, and parametric comparison data not found in the manufacturer datasheet, providing a one-stop engineering reference for the IGT65R025D2ATMA1.
IMBF170R650M1XTMA1 - 1700V SiC MOSFET, 7.4A, TO-263-7 | Infineon
The Infineon IMBF170R650M1XTMA1 is a 1700 V N-channel silicon-carbide (SiC) trench MOSFET in a surface-mount PG-TO263-7-13 package, engineered for auxiliary power supplies that operate directly from 600 V to 1000 V DC-link rails. It carries a continuous drain current rating of 7.4 A at Tc and a maximum power dissipation of 88 W (Tc), with a 12 V / 0 V gate-source interface compatible with conventional flyback controllers. What is a SiC MOSFET? A silicon-carbide metal-oxide-semiconductor field-effect transistor is a wide-bandgap power switch that offers higher breakdown voltage, lower on-state resistance per unit area, and faster switching than silicon MOSFETs or IGBTs at comparable voltage classes. It belongs to the hierarchy: SiC MOSFET -> SiC power device -> wide-bandgap semiconductor -> power discrete. Compared to silicon super-junction MOSFETs of similar rating, SiC parts typically achieve 50-70% lower switching losses and can operate at junction temperatures up to 175 C. Key features of the IMBF170R650M1 include an ultra-low on-state resistance of 650 mΩ at the rated gate drive, a low reverse-recovery charge body diode that simplifies flyback synchronous-rectifier-free designs, and a high-creepage TO-263-7-13 package that meets 1700 V reinforced-insulation creepage and clearance requirements. The part is qualified to industrial-grade reliability standards and is specified for continuous operation up to 175 C junction temperature, enabling compact flyback converters without external heatsinking at modest power levels. The trench SiC cell geometry minimises conduction losses at low line voltage, while the robust gate-oxide process tolerates standard 12 V gate drive without negative bias requirements. The intrinsic body diode supports hard-switched flyback operation, removing the need for an external anti-parallel silicon diode in many topologies. This combination delivers high efficiency at high switching frequencies, allowing magnetics shrinkage in auxiliary supply designs. Typical applications include auxiliary SMPS for three-phase solar inverters, EV charging station auxiliary rails, industrial drive control-power supplies, and high-voltage DC-DC converters operating from 600 V to 1000 V DC-link buses. Infineon's reference design demonstrates a quasi-resonant flyback converter delivering +15 V, -15 V, and +24 V outputs up to 62.5 W from 200 V to 1000 V DC input, peaking at 90.56% efficiency at full load. Designers should follow PCB layout best practices for high-voltage SiC devices: minimise gate-loop inductance with a 0 V to 12 V gate drive return path placed directly under the gate pin, use wide copper pours for power-loop inductance reduction, and consider a TVS diode on the gate for VGS transient clamping. Always verify creepage and clearance distances to surrounding high-voltage traces for 1700 V reinforced-insulation compliance per IEC 60664-1. This page synthesises distributor pricing, drop-in alternative candidates, and application-specific design notes not consolidated on the manufacturer datasheet - giving power engineers a single reference for component selection, second-source validation, and flyback converter design kickoff.
IMBG120R008M1H - 1200V 8mΩ CoolSiC SiC MOSFET G1 | Infineon
The Infineon IMBG120R008M1H is a 1200 V, 8 mΩ silicon-carbide (SiC) power MOSFET from Infineon's CoolSiC™ first-generation discrete family, supplied in a surface-mount PG-TO263-7-12 (D²PAK-7L) package. It is an N-channel enhancement-mode device rated for continuous drain currents up to 189 A (Tc) and pulsed drain currents suitable for hard-switched and soft-switched topologies operating at high switching frequencies. The 1200 V drain-source breakdown voltage combined with the ultra-low 8 mΩ on-resistance (at 25 °C) makes it one of the lowest-loss 1200 V SiC discretes Infineon offers in this footprint. Optimized gate-oxide integrity and a Kelvin-source pin in the 7-lead package help reduce gate-loop inductance and improve switching loss symmetry between parallel devices. A silicon carbide MOSFET is a wide-bandgap (WBG) power transistor built on a SiC substrate rather than conventional silicon. The wider bandgap (~3.26 eV vs silicon's 1.12 eV) and a higher critical electric field allow SiC MOSFETs to deliver lower on-state loss per unit area, faster switching edges, and higher junction-temperature operation (typically 175 °C) than silicon IGBTs or superjunction MOSFETs. Within the power-electronics hierarchy, the IMBG120R008M1H belongs to the discrete-MOSFET class, which feeds into the broader power-management-IC and high-voltage-converter ecosystems used in EV traction, renewable, and industrial drives. Key specifications include a 1200 V drain-source voltage rating, 8 mΩ typical RDS(on) at 25 °C, 189 A continuous drain current (Tc), and a wide gate-threshold range that allows 0 V turn-off when paired with an Infineon EiceDRIVER™ gate driver. The PG-TO263-7-12 package exposes an isolated tab that simplifies PCB heatsinking and is fully RoHS compliant with lead-free (Pb-free) reflow profile compatibility to JEDEC J-STD-020. Typical applications include 800 V EV onboard chargers (OBC), DC-DC boost converters in traction inverters, three-phase solar string inverters, telecom rectifier stages, and high-frequency induction-heating power supplies. The low RDS(on) and thermally efficient D²PAK-7L package make the part especially attractive when designers need to minimize conduction loss while retaining a standardized SMT footprint.
IMBG40R011M2HXTMA1 - 400V 133A SiC MOSFET, 11mΩ | Infineon
The Infineon IMBG40R011M2HXTMA1 is a 400V N-channel CoolSiC™ G2 Silicon Carbide (SiC) power MOSFET housed in a 7+Tab D2PAK (PG-TO263-7-11) surface-mount package with an on-state resistance of 11 mOhm and continuous drain current of 13.4 A (Ta) / 133 A (Tc). It is part of Infineon's second-generation CoolSiC™ 400V family, which combines ultra-low switching losses, high robustness, and a low on-state resistance to deliver high power density and system efficiency. A SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor) is a wide-bandgap power semiconductor switch that operates at higher voltages, frequencies, and temperatures than conventional silicon MOSFETs. Within the power-conversion hierarchy, SiC MOSFETs sit above silicon MOSFETs and IGBTs in switching-frequency and efficiency capability, and are widely used in hard- and soft-switching power topologies where silicon devices lose too much energy. Key features include a 400V drain-source breakdown rating suitable for 230V AC PFC front-ends and 380V DC bus designs, an 11 mOhm typical R_DS(on) at V_GS=18V, an integrated anti-parallel body diode optimized for hard-switching commutation, and a Kelvin-source pin in the D2PAK-7 package to reduce gate-loop inductance. Compared to the G1 generation, the G2 die reduces R_DS(on) per area and improves short-circuit ruggedness. The device is targeted at high-density SMPS, totem-pole PFC, solar inverters, energy storage, and AI-server PSU designs. According to the Infineon product page, the CoolSiC™ 400V G2 family is engineered for 2-level and 3-level hard- and soft-switching topologies where it delivers "outstanding levels of power density and system efficiency". When designing with this MOSFET, gate-drive voltage of +18V/-3V to +18V/-5V is recommended (V_GS(th) is typically 3.5V). The exposed tab of the D2PAK must be soldered to a sufficient copper pour for thermal dissipation; at 429W pulsed (Tc) capability, PCB layout is the primary thermal bottleneck. Always use a low-inductance gate-driver loop to avoid dv/dt-induced false turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the IMBG40R011M2HXTMA1 that are not consolidated in the manufacturer datasheet.
IMCQ120R007M2HXTMA1 - 1200V 7mOhm CoolSiC MOSFET | Infineon
The Infineon IMCQ120R007M2HXTMA1 is a CoolSiC Generation 2 silicon-carbide (SiC) power MOSFET in a top-side cooled Q-DPAK (PG-HDSOP-22) surface-mount package. It is rated at 1200 V drain-source voltage, 7 mOhm typical on-resistance, and supports up to 257 A continuous drain current at Tc, with 1172 W power dissipation at Tc. The Q-DPAK top-side cooling architecture exposes the thermal pad on the package top surface, enabling direct cold-plate or heatsink mounting and substantially improving thermal performance versus bottom-cooled DPAK alternatives. A silicon-carbide MOSFET (SiC MOSFET) is a wide-bandgap (WBG) power transistor built on a 4H-SiC substrate instead of conventional silicon. Compared with silicon IGBTs and superjunction MOSFETs, SiC MOSFETs offer lower switching losses, higher switching frequency capability, higher junction temperature tolerance, and lower on-resistance per unit area. Within the power-device hierarchy, SiC MOSFETs sit above silicon MOSFETs and IGBTs and are typically deployed in the 600-1700 V, >5 kW segment of power conversion. Key features of this CoolSiC G2 device include an integrated gate-driver robustness profile, low Qrr body diode behavior, and a gate threshold tailored for 0-18 V standard gate drivers. The Q-DPAK top-side cooling solution provides an outstanding thermal impedance and simplifies mechanical assembly, reducing overall system cost in high-density power converters. The wide-bandgap design enables hard-switching topologies at multi-kilowatt power levels without exceeding junction temperature limits. Typical applications include solar string inverters and central PV inverters, electric-vehicle (EV) on-board chargers and DC-DC converters, industrial servo drives and uninterruptible power supplies, and high-power telecom rectifiers. In these systems the part enables higher switching frequency and smaller magnetics, or higher continuous power density at the same switching frequency as silicon IGBTs. When designing with this part, follow the recommended gate-drive voltage of 18 V (with -3 V to -5 V turn-off) and place the gate-drive loop inductance below 5 nH to avoid parasitic turn-on. The top-side cooled Q-DPAK package requires a thermal interface material (TIM) and an attached cold-plate or heatsink on the top surface, not the PCB land side. This page synthesizes distributor pricing, parametric proximity data, and practical design notes that go beyond the manufacturer datasheet to accelerate engineering selection.
IMLT40R011M2HXTMA1 - 400V 11mΩ SiC MOSFET CoolSiC G2 | Infineon
The Infineon IMLT40R011M2HXTMA1 is a CoolSiC 400V Generation 2 N-channel silicon-carbide (SiC) power MOSFET with an ultra-low on-state resistance of 11 mΩ and a continuous drain current of 144 A (Tc), housed in a surface-mount PG-HDSOP-16-8 package with XT interconnection technology. It is rated for 400 V drain-source voltage and 429 W power dissipation (Tc) and is targeted at high-frequency hard- and soft-switching power conversion such as AI server PSUs, telecom SMPS, and motor drives. A silicon-carbide MOSFET (SiC MOSFET) is a wide-bandgap power transistor that switches much faster and tolerates higher voltages, temperatures, and switching frequencies than a conventional silicon MOSFET. SiC MOSFETs sit within the power management IC hierarchy under discrete semiconductors, enabling higher power density and system efficiency in 2- and 3-level topologies where silicon devices would incur excessive switching loss. The IMLT40R011M2H belongs to the Infineon CoolSiC G2 400V discrete family, developed to reduce overall system cost while delivering best-in-class figure-of-merit. Key features include an 11 mΩ typical RDS(on) at VGS = 18 V, a benchmark gate threshold voltage VGS(th) of 4.5 V, a recommended gate drive range of 0 V to 18 V, a commutation-robust fast body diode with low Qrr, and 100% avalanche-tested ruggedness. The XT interconnection technology delivers best-in-class thermal performance, and the device is qualified for high-frequency switching and synchronous rectification. RDS(on) shows very low dependency on temperature, simplifying paralleling and thermal design. The device uses Infineon's Gen-2 SiC trench technology, which lowers specific on-resistance and gate charge versus Gen-1. The low Qrr body diode eliminates the need for an anti-parallel silicon diode in many bridge topologies and reduces dead-time loss. The PG-HDSOP-16-8 top-side-cooled package enables direct heat removal through the PCB top layer or an attached heatsink, which is critical for compact high-power-density converters. Typical applications include AI server switch-mode power supplies (PSU), telecom rectifiers, industrial SMPS, EV onboard chargers, solar inverters, and motor drives. The 400V rating makes it ideal for PFC stages, full-bridge / half-bridge LLC converters, and totem-pole bridgeless PFC front ends where SiC dramatically reduces switching loss compared to silicon superjunction MOSFETs. When designing with this part, choose a gate driver rated for the 0 V to 18 V drive range (typical recommended VGS(on) = +18 V, VGS(off) = 0 V or -3 V to -5 V for highest noise immunity). Use a Kelvin-source connection if available to suppress source-inductance-driven gate ringing, and place the gate-loop decoupling capacitor as physically close to the gate and source pins as possible. This page synthesizes distributor pricing, drop-in alternatives, application guidance, and design notes that complement the manufacturer datasheet, giving engineers a faster path from selection to qualified BOM.
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
The Infineon IMLT65R040M2HXTMA1 is a 650 V, 57 A N-channel silicon-carbide (SiC) power MOSFET from Infineon's industrial CoolSiC™ G2 trench technology family, supplied in a surface-mount PG-HDSOP-16-6 package with kelvin source pin and continuous drain current rating of 57 A at TC. The device is qualified to JEDEC industrial standards and is offered on tape-and-reel packaging, identified by the XTMA1 suffix. A silicon-carbide MOSFET (SiC MOSFET) is a wide-bandgap power transistor built on a SiC substrate instead of conventional silicon. Wide-bandgap semiconductors such as SiC and GaN offer higher breakdown field, faster switching, and lower switching losses than silicon MOSFETs of equivalent voltage class. Within the power-transistor taxonomy, a SiC MOSFET is a sub-class of MOSFET -> power MOSFET -> discrete semiconductor, sitting alongside silicon MOSFETs, IGBTs, and GaN HEMTs. CoolSiC™ is Infineon's brand for its second-generation (G2) SiC trench MOSFET platform. Key electrical specifications include a drain-source breakdown voltage of 650 V, a typical on-state resistance RDS(on) of 40 mΩ (VGS = 18 V), a gate charge QG of 28 nC, and a pulsed drain current ID,pulse of 143 A. The MOSFET integrates a kelvin source pin that decouples the gate-drive return path from the power-current path, reducing gate-loop inductance and improving switching performance in hard-switched topologies. The PG-HDSOP-16-6 top-side-cooled package supports continuous drain power dissipation of 268 W (TC) and provides a low junction-to-case thermal resistance that enables compact high-power-density designs. Typical applications include totem-pole PFC stages, solar string inverters, telecom and server SMPS, EV on-board chargers, and industrial motor drives. The combination of 650 V blocking voltage, low RDS(on), low reverse-recovery charge and the kelvin-source package makes the IMLT65R040M2HXTMA1 well suited to bridgeless PFC and high-frequency LLC topologies where switching losses dominate efficiency. The source and driver-source pins are not interchangeable and must be connected as specified in the Infineon datasheet. When designing with this part, pay particular attention to gate-drive voltage (VGS = 18 V recommended), use of a negative turn-off voltage to prevent parasitic turn-on, and proper kelvin-source routing to realise the published switching performance. The exposed top-side thermal pad must be soldered to a sufficient copper area on the PCB to keep junction temperature within the 150 °C rated maximum.
IMLT65R060M2HXTMA1 - 650V 60mΩ SiC MOSFET 40A | Infineon
The Infineon IMLT65R060M2HXTMA1 is a 650 V, 60 mΩ N-channel Silicon Carbide (SiC) CoolSiC™ G2 MOSFET rated at 40 A continuous drain current (Tc) and 200 W power dissipation (Tc), housed in a surface-mount PG-HDSOP-16-6 (TOLT) package with XT interconnection technology. According to the Infineon final datasheet, key parameters include 60 mΩ typical RDS(on), 18 nC total gate charge (Qg), 36 nC Qgd at 400 V, 96 A pulsed drain current, and 4.8 µJ Eoss at 400 V. A Silicon Carbide MOSFET is a wide-bandgap power transistor that switches much faster and loses far less energy than equivalent silicon MOSFETs or IGBTs. The SiC die technology enables higher blocking voltage, higher switching frequency, higher operating temperature, and dramatically lower switching and conduction losses, placing SiC MOSFETs in the power semiconductor hierarchy below traditional silicon MOSFETs but above GaN HEMTs in typical 650 V-1700 V power-conversion applications. Key features include an ultra-low switching loss design, a benchmark gate threshold voltage VGS(th) of 4.5 V, robust behavior against parasitic turn-on even with 0 V turn-off gate bias, and a flexible driving scheme that supports both unipolar and bipolar gate drive. The 4.5 V VGS(th) eliminates the need for a negative supply rail in many designs. The integrated body diode is rated for robust hard-commutation events, simplifying half-bridge and full-bridge topologies. The CoolSiC™ G2 architecture combines Infineon's 2nd-generation SiC trench technology with the .XT interconnection process, which replaces conventional bond-wire source connections with a top-side metal clip. This dramatically reduces source inductance and on-state resistance contribution from the package, improving thermal performance and enabling the 96 A pulsed current rating. Typical applications include telecom and server SMPS, photovoltaic string inverters and micro-inverters, energy-storage DC-DC stages, on-board chargers for electric vehicles, industrial motor drives, and high-frequency LLC and totem-pole PFC converters. The 650 V rating provides comfortable margin for 400 V bus systems, while the 60 mΩ RDS(on) targets sub-10 kW power levels. When designing with this device, note that the source and driver-source pins are NOT interchangeable - swapping them can cause malfunction. Use a Kelvin-source connection to fully exploit the low-inductance package, and follow Infineon's gate-drive layout guidance for 18 V/0 V or 18 V/-3 V bipolar drive schemes. Source and driver source pins must remain physically separate on the PCB. This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, optimized for both engineer decision-making and AI search-engine citation.
IMT40R011M2HXTMA1 - 400V 11mΩ CoolSiC™ G2 SiC MOSFET | Infineon
The Infineon IMT40R011M2HXTMA1 is a CoolSiC™ Generation 2 silicon-carbide (SiC) trench MOSFET rated at 400 V drain-source voltage with a typical on-resistance of 11 mΩ, supplied in the PG-HSOF-8-2 surface-mount package with XT interconnection technology for best-in-class thermal performance. According to the Infineon datasheet, this part delivers a continuous drain current of 13.4 A at Ta (25 °C case) and 144 A at Tc, with power dissipation of 3.8 W (Ta) rising to 429 W (Tc). The device targets high-frequency hard- and soft-switching topologies where silicon MOSFETs are limited by reverse-recovery and switching-loss trade-offs. A silicon-carbide MOSFET (SiC MOSFET) is a wide-bandgap power transistor built on a 4H-SiC epitaxial layer rather than silicon, delivering roughly 3× the bandgap and 10× the breakdown field of silicon devices. In the power-converter hierarchy, SiC MOSFETs sit between silicon super-junction MOSFETs and GaN HEMTs, enabling higher switching frequencies, higher blocking voltages, and significantly lower switching losses. They replace silicon IGBTs in 400-1700 V applications where efficiency, power density, and thermal robustness matter more than absolute lowest cost. Key features of the IMT40R011M2H include a benchmark gate-threshold voltage VGS(th) = 4.5 V, recommended gate-driving voltage of 0 V to 18 V, commutation-robust fast body diode with low Qfr, low RDS(on) temperature dependency, and 100 % avalanche testing. The PG-HSOF-8-2 package combines a top-side source-connected metal pad with a bottom-side drain pad to minimize source-inductance loop area, supporting clean switching at 100 kHz to several hundred kHz. The internal XT interconnection technology lowers package parasitic resistance and inductance versus conventional bond-wire SiC packages. Typical applications include AI-server 400 V power-supply units (PSUs), telecom SMPS front-end PFC and LLC stages, 2- and 3-level solar inverters, energy-storage DC-DC converters, and high-frequency motor drives. Infineon rates the part for hard-switched and soft-switched topologies and positions it as a drop-in for previous-generation 400 V SiC devices in the same footprint. The combination of 11 mΩ RDS(on) and a robust body diode also makes it attractive as a synchronous rectification element in LLC resonant converters where reverse-recovery loss dominates. When designing with this part, observe the recommended gate-drive window of 0 V to 18 V and place the gate-driver within 5 mm of the device to suppress the parasitic turn-on induced by dV/dt and the source lead inductance. For hard-switched PFC at 100 kHz+, a -3 V to +18 V drive with a properly sized external gate resistor is recommended. Verify junction-to-case thermal resistance against your heatsink design - the 429 W (Tc) power-handling figure assumes an infinite heatsink at 25 °C and is not achievable in real PCB layouts.
IMW120R045M1H - 1200V 45mOhm CoolSiC MOSFET | Infineon
The Infineon IMW120R045M1H is a CoolSiC 1200V silicon carbide (SiC) trench N-channel MOSFET with 45 mOhm on-resistance at Tj = 25C, 52 A maximum drain current at 25C, and 228 W power dissipation at Tc, housed in a through-hole PG-TO247-3-41 (TO-247-3) package. A SiC power MOSFET is a voltage-controlled semiconductor switch built on silicon carbide rather than silicon. Because SiC has roughly ten times higher critical electric field strength than silicon, a SiC MOSFET can block 1200 V in a thin drift layer, yielding lower specific on-resistance, lower switching losses, and higher junction temperature capability than a comparable silicon superjunction MOSFET or IGBT. In the power-conversion hierarchy, it sits as the primary switch in hard- and soft-switching topologies such as LLC, phase-shifted full bridge, and 3-level NPC converters. Key features of the IMW120R045M1H include very low switching losses for high-frequency operation, a benchmark gate threshold voltage of VGS(th) = 4.5 V, IGBT-compatible 15 V turn-on gate drive with 0 V turn-off, a temperature-independent turn-off switching loss characteristic, and a robust intrinsic body diode ready for synchronous rectification. Infineon also specifies fully controllable dv/dt, letting designers trade switching speed against EMI. Technically, the trench-cell SiC structure provides a threshold-free on-state characteristic, meaning conduction begins without a sharply defined knee, which simplifies parallel operation and improves efficiency at moderate loads. Compared with silicon IGBTs at 1200 V, the absence of a fixed diode forward voltage at light load and the lack of tail current at turn-off can cut switching energy by an order of magnitude. Typical applications include solar string and central inverters, energy storage converters, EV fast-charging infrastructure, industrial drives, and auxiliary power supplies, where 1200 V blocking, low switching loss, and reduced cooling effort directly raise efficiency and power density. Design-wise, follow Infineon Application Note AN2018-09 when selecting positive and negative gate-source voltages, since the gate-drive window strongly influences long-term threshold-voltage stability. This page synthesizes distributor pricing context, drop-in family alternatives, SOA guidance, and practical design notes not consolidated in the manufacturer datasheet.
IMW65R027M1H - 650V 47A SiC MOSFET 27mOhm | Infineon
The Infineon Technologies IMW65R027M1H is a 650 V, 47 A N-channel CoolSiC silicon carbide MOSFET from the M1 series, with a typical RDS(on) of 27 mOhm at Tj = 25C (34 mOhm maximum per third-party listings), delivered in a through-hole TO-247 3-pin package with 189 W maximum power dissipation. A silicon carbide (SiC) MOSFET is a wide-bandgap power transistor that replaces conventional silicon superjunction or IGBT devices in high-voltage switching stages. Within the power-management hierarchy (MOSFET -> power transistor -> power semiconductor), SiC devices exploit the wider bandgap, higher critical field and superior thermal conductivity of the SiC material to achieve lower switching losses, higher junction temperature capability and smaller magnetics in converters operating from 400 V to 800 V DC buses. Key features of this M1-series device include optimized switching behavior at higher currents, a commutation-robust fast body diode with low reverse-recovery charge (Qfr), superior gate-oxide reliability, and a maximum junction temperature (Tj,max) of 175C with excellent thermal behavior. Infineon's CoolSiC trench technology also provides increased avalanche capability and lower temperature dependency of RDS(on) and pulse current compared with planar SiC competitors. The device is gate-driver compatible with standard silicon MOSFET drivers, easing migration from IGBT or superjunction designs without exotic gate-drive circuitry. Infineon states that for optimum lifetime and reliability, operating conditions should not exceed 80% of the maximum ratings stated in the datasheet. Typical applications include solar inverters, server and telecom power supplies, energy storage converters, EV on-board chargers, and industrial motor drives where high efficiency and high power density are required. When designing, respect the derating guidance (80% of maximum ratings) and ensure the gate drive provides adequate negative or zero-volt off-state bias to avoid parasitic turn-on in half-bridge topologies. This page synthesizes distributor pricing, drop-in alternatives, design notes, and application guidance not found in the manufacturer datasheet.
IMZ120R045M1H - 1200V 45mΩ SiC Trench MOSFET TO-247-4 | Infineon
The Infineon IMZ120R045M1H is a 1200 V, 45 mΩ N-channel silicon carbide (SiC) trench MOSFET in a TO-247-4 package, with a continuous drain current rating of 52 A at 25 °C and a maximum power dissipation of 228 W. Built on Infineon's CoolSiC™ trench technology, it targets high-voltage, high-frequency switching applications where silicon IGBTs hit efficiency, switching-loss, or thermal ceilings. A Silicon Carbide (SiC) MOSFET is a wide-bandgap power switch built on a SiC substrate instead of conventional silicon. SiC transistors offer higher breakdown voltage per micron, lower specific on-resistance, faster switching edges and operation at junction temperatures above 175 °C, sitting in the power-device hierarchy as: SiC MOSFET > MOSFET > power transistor > discrete semiconductor > semiconductor. Unlike silicon IGBTs, SiC MOSFETs are majority-carrier devices with no tail current, so turn-off losses are dramatically reduced and soft-switching behavior is intrinsic. Key features of the IMZ120R045M1H include a benchmark gate threshold voltage of 4.5 V, a 0 V turn-off gate voltage rating, wide gate-source voltage range, fully controllable dV/dt, and a commutation-robust body diode ready for synchronous rectification. A separate sense (driver) source pin enables tight gate-loop control for the fastest possible switching. The device is qualified for industrial applications per JEDEC 47/20/22. The trench architecture minimizes RDS(on) per unit area while keeping the body diode rugged for hard commutation. A typical RDS(on) at 25 °C of 45 mΩ, gate charge optimized for 0–18 V drive, and integrated thermal-sensing via a fourth Kelvin source pin allow designers to push switching frequency into the 50–250 kHz range for telecom rectifier, photovoltaic, or energy-storage stages. Compared with equivalent silicon IGBTs, switching losses often drop by 60–80% and the heatsink shrinks accordingly. Typical applications include solar string inverters, industrial servo drives, on-board EV chargers and DC fast-charging stations, telecom rectifier modules, induction heating, and auxiliary converters in energy storage systems. Designers should note that the TO-247-4 Kelvin pin is NOT exchangeable with the main source pin; proper gate-loop layout is critical for stable switching and clean EMI performance. This page synthesizes distributor pricing, drop-in alternatives, and practical SiC design notes beyond what is shown in the manufacturer datasheet.
IMZ120R080M1H - 1200V 80mOhm CoolSiC MOSFET | Infineon
The Infineon IMZ120R080M1H is a 1200V, 80 mOhm Silicon Carbide (SiC) trench MOSFET from Infineon's CoolSiC family, designed for high-efficiency, high-voltage power conversion in TO-247-4 packages. As an N-channel enhancement-mode device, it combines low on-state resistance, low switching losses, and a robust, benchmark gate threshold voltage suitable for hard-switched and resonant topologies. Silicon Carbide MOSFETs are wide-bandgap power switches that exceed the voltage, frequency, and temperature limits of conventional silicon MOSFETs and IGBTs. In the broader taxonomy, SiC MOSFETs sit alongside GaN HEMTs in the wide-bandgap (WBG) semiconductor category, which itself falls under discrete power semiconductors. Compared with silicon IGBTs of the same voltage class, a 1200V SiC MOSFET delivers markedly lower switching loss, higher switching frequency capability, and no body-diode reverse-recovery tail, enabling smaller magnetics and higher power density. Key features of the IMZ120R080M1H include a 1200V drain-to-source voltage rating, an RDS(on) of 80 mOhm at 25 degrees C, a benchmark gate threshold voltage of VGS(th) = 4.5V, and 0V turn-off gate drive that simplifies gate-driver design. The robust body diode supports hard commutation, and the trench structure provides a threshold-free on-state characteristic. This part is a CoolSiC 1200V SiC trench MOSFET in TO-247-4 packaging, leveraging a state-of-the-art silicon-carbide process to combine performance with long-term reliability. Typical applications include industrial SMPS, solar inverters, EV charging infrastructure, UPS systems, and auxiliary power supplies for traction and industrial drives. The 1200V rating is well-matched to rectified 480VAC three-phase buses, while the fast switching enables higher converter power density. When designing with this device, follow Infineon's recommendation to operate within 80% of maximum ratings for optimum lifetime. Gate-source voltage selection (positive and negative levels) significantly impacts long-term behavior; review the datasheet's gate-drive section carefully. This page synthesizes distributor pricing, parametric context for the CoolSiC 1200V family, and design guidance not found in the manufacturer datasheet alone, helping engineers select and qualify a SiC switch for high-voltage designs.
IPA60R120C7XKSA1 - 600V 11A CoolMOS C7 MOSFET | Infineon
The Infineon IPA60R120C7XKSA1 is a 600 V N-channel superjunction (SJ) power MOSFET from the CoolMOS C7 family, housed in a through-hole PG-TO220-FP (Full Pack, isolated) package with 11 A continuous drain current (Tc) and 32 W power dissipation (Tc). The XKSA1 suffix denotes the standard tube-pack industrial ordering code used by Infineon distributors. A CoolMOS C7 superjunction MOSFET is a high-voltage power transistor designed for switched-mode power supply (SMPS) applications. Compared with conventional planar MOSFETs, the superjunction principle relocates the breakdown voltage from the vertical drift region into alternating N/P pillars, reducing on-resistance per unit area and cutting switching losses by roughly 50% versus the prior CoolMOS CP generation. This places C7 parts within the power-management IC hierarchy: SMPS controller -> gate driver -> power MOSFET -> magnetic output filter. Key features include a 600 V drain-source breakdown voltage (VBR(DSS)), 103 mOhm maximum on-resistance at 25 C (per Infineon's product page), an integrated body diode for bridge topologies, and the isolated Full Pack (FP) tab which eliminates the need for an insulating pad and mounting hardware. The C7 family is engineered for hard- and soft-switching topologies including PFC, TTF (two-transistor forward), and LLC. Typical applications include 600 V PFC boost stages in server and telecom power supplies, LLC half-bridge resonant converters, solar inverters, and industrial motor drives. The combination of low Eoss turn-off loss and low Qrr output charge makes it well-suited to high-frequency ZVS and ZCS designs. When designing with this device, gate-drive voltage of 10 V or higher is required to fully enhance the SJ structure; under-driving below ~9 V increases RDS(on) sharply and degrades thermal performance. The Full Pack isolation rating is typically 2500 VAC - verify creepage/clearance against your end-product safety standard.
IPA60R180P7SXKSA1 - 600V CoolMOS P7 180mOhm MOSFET | Infineon
The Infineon IPA60R180P7SXKSA1 is a 600V N-channel power MOSFET built on Infineon's 7th-generation CoolMOS P7 superjunction (SJ) technology platform, offered in the industry-standard PG-TO220-3-312 through-hole package. It features a maximum drain-source voltage VDS of 600V, a continuous drain current ID of 18A at Tc, and an ultra-low static drain-source on-resistance RDS(on) of 180 mOhm maximum at 25C, delivering an excellent figure-of-merit for high-voltage switched-mode power supplies. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-source voltage creates a conductive n-type channel between drain and source. Within the power-management hierarchy, discrete MOSFETs sit at the bottom of the converter stack: switching power MOSFETs -> DC-DC converter stages -> SMPS (switched-mode power supply) -> power-supply unit. The CoolMOS P7 platform combines the fast switching capability of superjunction architecture with exceptionally low gate charge and ease-of-use, reducing the design-in complexity that historically hindered SJ MOSFET adoption. Key features include an integrated gate-source Zener diode for ESD robustness, very low effective output capacitance Eoss for reduced switching losses, a wide gate-drive compatibility range (typically 10V drive, with logic-level operation supported), and best-in-class RDS(on) per package area. The PG-TO220-3-312 package provides a thermal resistance RthJC suitable for 26W power dissipation at TC, enabling compact heatsink-free designs in low-to-medium power applications. The 600V rating provides ample design margin for universal-input (85-265 VAC) PFC and flyback stages, while the 180 mOhm RDS(on) keeps conduction losses under 1.5W at 8A continuous current. The superjunction construction drastically reduces the on-resistance per silicon area compared to conventional planar MOSFETs of the same voltage class. Typical applications include switch-mode power supplies (SMPS), power-factor correction (PFC) boost stages, LLC and quasi-resonant flyback converters, LED lighting drivers, solar inverters, and industrial battery chargers. The wide VDS margin also suits server and telecom auxiliary supplies operating from 380-400V DC bus rails. When designing with the IPA60R180P7SXKSA1, observe the SOA limits published in the manufacturer datasheet and select a gate drive voltage of 10V for full RDS(on) specification. For hard-switched topologies above 50 kHz, verify dv/dt immunity and consider a small gate-source resistor to control ringing. The package is through-hole and is not intended for surface-mount reflow processes. This page synthesizes distributor pricing, verified pin-compatible drop-in alternatives from the Infineon CoolMOS family and competing 600V superjunction MOSFETs, and practical design notes that extend beyond the bare datasheet table to help power engineers select the right part.
IPA60R190C6 - 600V 190mOhm 20.2A CoolMOS C6 N-MOSFET | Infineon
The Infineon IPA60R190C6 is a 600 V, 190 mΩ N-channel power MOSFET built on Infineon's CoolMOS™ C6 superjunction (SJ) technology, housed in a through-hole TO-220 FullPAK (TO-220FP-3) package. It is rated for continuous drain current of 20.2 A and delivers low on-state resistance combined with fast switching transitions, making it suited for high-efficiency hard-switched and resonant power-conversion topologies up to hundreds of kilohertz. The part is targeted at industrial and consumer SMPS designs where thermal headroom, switching loss, and ease of use are equally important. What is a CoolMOS power MOSFET? A CoolMOS device is a high-voltage power MOSFET built on superjunction (SJ) technology that vertically alternates P- and N-doped drift regions. This SJ structure collapses the traditional silicon limit between breakdown voltage (BV) and on-resistance (RDS(on)), yielding 5-10x lower specific RDS(on) per die area compared with conventional planar MOSFETs of the same voltage class. As a member of the voltage-regulator / power-management family, it sits hierarchically: power MOSFET -> discrete semiconductor -> power management IC ecosystem. CoolMOS C6 specifically targets cost-sensitive industrial and consumer applications, balancing low gate charge, low switching loss, and a wide SOA relative to earlier C3 and P6 generations. Key features of the IPA60R190C6 include a 190 mΩ maximum RDS(on) at VGS=10 V, integrated body diode for hard-commutated bridges, low gate charge Qg for reduced driver losses, and 100% avalanche-tested ruggedness. The TO-220FP package provides a fully isolated tab (no insulating washer required), simplifying mechanical mounting and improving thermal cycling reliability compared with standard TO-220. Compared with TO-220 alternatives, the FullPAK version adds galvanic isolation between the heatsink and the die, allowing direct mounting to a grounded chassis in consumer and industrial products. The IPA60R190C6 is typically deployed in PFC stages, LLC and quasi-resonant flyback converters, server and telecom AC/DC bricks, LED drivers, e-bike chargers, and solar micro-inverters. Its low Qg and low Eoss deliver high efficiency across the 50 kHz to 300 kHz switching range commonly used in modern SMPS. Compared with the earlier C3 series, C6 reduces switching losses by roughly 30-50% in hard-switched ZVS/ZCS topologies, while preserving the simple gate-drive requirements that make drop-in replacement straightforward. According to the Infineon product page (fetched 2026-10-08), the IPA60R190C6 remains in active production for industrial and consumer use cases. When designing with IPA60R190C6, place the gate-drive resistor close to the gate pin to limit ringing and use a local gate-source pull-down of 10-100 kΩ to prevent false turn-on from Miller current. For PFC boost stages, account for body-diode reverse recovery when operating near the CCM/DCM boundary. Designers moving from older C3 or P6 parts typically re-tune snubber values but keep the same TO-220FP footprint, easing redesign. This page synthesizes Infineon CoolMOS C6 datasheet specifications, distributor pricing snapshots as of 2026-10-08, drop-in package alternatives (IPP60R190C6 TO-220, IPB60R190C6 D2PAK), and design notes compiled from the official CoolMOS C6 application notes — content not consolidated in any single source.
IPA60R190C6XKSA1 - 600V 20.2A CoolMOS C6 N-MOSFET | Infineon
The Infineon IPA60R190C6XKSA1 is a 600 V N-channel power MOSFET from the CoolMOS C6 family, rated for 20.2 A continuous drain current (Tc) and 34 W power dissipation in a TO-220 FullPAK (PG-TO220-FP) through-hole package. Built on Infineon's C6 high-voltage superjunction process, it delivers a typical on-state resistance of 190 milliohms at VGS = 10 V, ID = 9.5 A, achieving a strong balance of conduction loss and switching performance for medium-power SMPS stages. The drain-source breakdown of 600 V provides ample margin for 230 VAC rectified (around 325 V bulk) PFC and flyback converters. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to convert and regulate electrical energy in switched-mode power supplies (SMPS), motor drives, and lighting ballasts. Within the broader taxonomy, this part is a discrete semiconductor -> transistor -> MOSFET -> N-channel enhancement-mode -> high-voltage superjunction MOSFET -> power management switch. Compared with standard planar MOSFETs, CoolMOS C6 uses a compensated superjunction structure to slash RDS(on)*area product, reducing conduction loss without compromising avalanche ruggedness. Key features include ultra-low gate charge (Qg typically around 35-40 nC), a wide safe operating area (SOA), and an integrated body diode suitable for hard-switched bridge topologies. The TO-220 FullPAK adds a fully molded plastic body, providing 4 kV isolation between the heatsink-attached tab and the drain lead, which simplifies mechanical assembly and removes the need for a separate insulating mica or silicone pad. Architecturally, the C6 cell design optimizes the figure of merit (FOM = RDS(on) x Qg) for hard-switching topologies such as PFC boost and two-transistor forward converters. The 190 milliohm RDS(on) combined with low Eoss and Coss enables high-frequency operation up to 100 kHz while keeping switching losses moderate, supporting higher power density in modern SMPS designs. Typical applications include server and telecom switch-mode power supplies, solar micro-inverters, e-mobility charging onboard modules, industrial welding equipment, and HID lighting ballasts. Designers favor this part where 600 V breakdown, isolated package, and medium-current handling must coexist without complex thermal isolation hardware. A critical design consideration is heatsink selection: at 6 A continuous load with a typical 12 V Vgs drive, the device dissipates roughly 7 W, requiring a thermal pad interface and a small clip-on heatsink to keep Tj below 125 C. Designers should also respect the dv/dt induced turn-on risk by adding a small gate-source resistor. This page combines verified distributor pricing, drop-in alternatives, and practical design notes drawn from the Infineon IPA60R190C6 datasheet and current DigiKey/Mouser listings - information synthesized beyond what the manufacturer datasheet alone provides.
IPA95R1K2P7XKSA1 - 950V 6A CoolMOS P7 MOSFET | Infineon
The Infineon IPA95R1K2P7XKSA1 is a 950V, 6A N-channel CoolMOS P7 superjunction power MOSFET housed in a PG-TO220-FP (TO-220 Full Pack) through-hole package. Designed for low-to-medium power switched-mode power supplies, it combines a 1026 mOhm maximum on-state resistance (RDS(on)) with industry-leading figure-of-merit to deliver high efficiency at line-side voltages up to 230V AC rectified. A high-voltage power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-driven switch optimized to block hundreds to thousands of volts in the off-state and conduct current with minimal loss in the on-state. The CoolMOS P7 family belongs to the superjunction (SJ) MOSFET category, which uses a deep-pillar charge-balancing structure to push RDS(on) far below the silicon limit of conventional planar MOSFETs. Within the broader taxonomy, this part fits under N-channel power MOSFET -> discrete MOSFET -> discrete semiconductor -> semiconductor device. Key electrical specifications include a 950V drain-to-source breakdown voltage (VDSS), 6A continuous drain current at 25°C case temperature (ID), and 27W power dissipation (Ptot) under TO-220-FP mounting. The 1026 mOhm RDS(on) at VGS=10V reduces conduction loss in flyback and forward converters. The fully isolated TO-220-FP package eliminates the need for an additional insulator pad and provides a wide creepage distance, simplifying PCB layout in consumer and industrial designs. The CoolMOS P7 superjunction architecture integrates a fast-recovery body diode, integrated gate resistor, and Zener-protected gate that simplify paralleling and EMI filtering. These features reduce BOM count and improve reliability in PFC stages, flyback primary switches, and auxiliary supplies found in SMPS and lighting ballasts. Typical applications include SMPS power supplies, LED lighting drivers, PFC front stages, and HV lighting ballasts. In each, the IPA95R1K2P7 delivers high efficiency at 400V+ rail voltages where conventional 600V MOSFETs would have inadequate safety margin. When designing with this part, ensure gate drive voltage is at least 10V (12V recommended) to fully enhance the channel. The TO-220-FP isolation allows direct heatsinking without a thermal pad, but the 27W power dissipation still requires adequate airflow or a substantial heatsink at full load. This page synthesizes distributor pricing from DigiKey/Mouser, parametric drop-in alternatives, and design notes not typically aggregated on the manufacturer page.
IPB014N06NATMA1 - 60V 180A OptiMOS 5 N-Channel MOSFET | Infineon
The Infineon IPB014N06NATMA1 is an OptiMOS 5 N-Channel power MOSFET rated at 60V drain-source breakdown, 180A continuous drain current (at Tc), and 1.4 mΩ maximum on-resistance, housed in a PG-TO263-7 (D2PAK-7) surface-mount package. The part is designed for synchronous rectification in switched-mode power supplies and motor control applications, delivering 3W power dissipation at Ta (25°C ambient) and 214W at Tc (case temperature), with a 100% avalanche-tested rating per Infineon's OptiMOS quality program. A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate conduction between the drain and source terminals, enabling high-efficiency power conversion at frequencies far beyond what bipolar transistors can achieve. N-Channel MOSFETs such as this Infineon device form the workhorse of the synchronous rectifier stage in modern switch-mode power supplies (SMPS), where two MOSFETs alternately commutate current through the transformer or inductor. Within the broader taxonomy, MOSFETs belong to discrete semiconductors, sit beneath the power-management IC hierarchy, and complement gate drivers, PWM controllers, and DC-DC converters in any switched-mode power topology. Key features include 1.4 mΩ maximum RDS(on) at VGS=10V (one of the lowest on-resistances in the 60V OptiMOS 5 family), a low gate charge Qg (typical values are published in the datasheet's dynamic characteristics table), and superior thermal resistance owing to the D2PAK-7 footprint that allows substantial copper area on the PCB to act as a heatsink. The device is qualified to JEDEC standards for the target applications, and the JEDEC-qualified silicon guarantees drop-in compatibility with industry-standard 60V synchronous-rectifier sockets. Architecturally, the OptiMOS 5 generation uses Infineon's latest trench-gate technology, which shrinks the cell pitch and reduces both RDS(on)*Area figure-of-merit and gate charge compared to prior generations. This reduction directly lowers conduction and switching losses, which is critical for high-frequency (300 kHz to 1 MHz) LLC, full-bridge, and active-clamp forward converters where every milliohm of RDS(on) translates into measurable efficiency loss and thermal stress. Typical applications include 48V-to-12V intermediate-bus DC-DC converters for telecom and server equipment, synchronous rectification stages in isolated AC-DC and DC-DC converters, high-current motor drive half-bridges in robotics and e-mobility, hot-swap and OR-ing controllers in distributed power systems, and battery protection circuits in lithium-ion packs. The wide -55°C to +175°C operating-junction-temperature range also supports automotive under-hood and industrial automation deployments. When designing with the IPB014N06NATMA1, pay close attention to gate-drive voltage: full enhancement requires VGS of 10V, and partial enhancement at 4.5V can increase RDS(on) by 2x or more. Place a 1Ω gate resistor and a gate-source pull-down to prevent accidental turn-on from Miller-capacitance-induced dv/dt transients in half-bridge topologies. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPB017N10N5LFATMA1 - 100V 1.7mΩ OptiMOS 5 Linear FET | Infineon
The Infineon IPB017N10N5LFATMA1 is an N-channel OptiMOS™ 5 Linear FET rated at 100 V VDS, 180 A continuous drain current (TC), and 313 W maximum power dissipation, housed in a surface-mount PG-TO263-7 (D2PAK-7) package. The device combines a very low RDS(on) of 1.7 mΩ with a wide safe operating area (SOA), allowing sustained linear-mode operation without the conventional R DS(on) versus linear-capability trade-off. Its PG-TO263-7 footprint supports high-current surface-mount designs with a thermal pad for low junction-to-case resistance. An OptiMOS Linear FET is a specialized trench MOSFET engineered to operate in saturation for extended periods - useful in hot-swap, eFuse, inrush limiting, and battery-protection circuits where a standard MOSFET would otherwise enter thermal runaway. Within the broader taxonomy it sits as: MOSFET -> power MOSFET -> N-channel enhancement MOSFET -> linear FET, and the part family itself is Infineon's OptiMOS 5 Linear FET series. Key features include a 1.7 mΩ maximum on-resistance at VGS = 10 V, ±20 V gate-source voltage rating, and avalanche-rated single-pulse capability. The wide SOA curve allows high current at moderate VDS without immediate failure, which is the defining characteristic of the Linear FET family versus standard OptiMOS 5 devices that are optimized purely for switching. The TO-263-7 (D2PAK) package provides a low thermal resistance path through the drain tab, simplifying heatsink attachment on the PCB. Architecturally, Infineon uses an advanced trench cell design tuned for high transconductance and linear-region ruggedness, with a separate gate-oxide recipe that supports the high inrush currents typical of telecom and server OR-ing applications. The seven-lead PG-TO263-7 variant adds extra source pins (in addition to the tab) to lower source inductance and improve paralleling behavior. Typical applications include 48 V telecom hot-swap controllers, server OR-ing and battery backup units, eMobility DC-link discharge circuits, and industrial programmable logic controllers (PLCs) requiring robust electronic circuit protection. When designing with the part, derate continuously using the SOA graph at the target case temperature and ensure the gate drive stays within ±20 V; use a TVS or gate-source resistor for protection against dv/dt-induced turn-on.
IPB019N08N3GATMA1 - 80V 180A 1.9mΩ OptiMOS 3 N-MOSFET | Infineon
The Infineon IPB019N08N3GATMA1 is an 80 V N-channel OptiMOS 3 power MOSFET delivering 180 A continuous drain current (Tc) and 300 W power dissipation (Tc) in a surface-mount PG-TO263-7 (D2PAK-6) package. Key parameters include a maximum drain-source voltage of 80 V, on-resistance of 1.9 mΩ at VGS = 10 V, gate threshold voltage of 3.5 V, total gate charge of 206 nC at 10 V, and an operating junction temperature range of -55 °C to +175 °C. The device uses Infineon's OptiMOS 3 trench technology, which delivers industry-leading Figure-of-Merit (RDS(on) × Qg) for high-frequency switching applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to efficiently switch or amplify electrical signals in power electronics. MOSFETs sit within the discrete semiconductor hierarchy: transistor → MOSFET → power MOSFET → power management component. The OptiMOS 3 family specifically targets high-efficiency power conversion in synchronous rectification, DC-DC converter, and motor drive topologies where low conduction and switching losses are critical. The IPB019N08N3 stands out through its combination of very low RDS(on) of 1.9 mΩ, ultra-low thermal resistance of the D2PAK-7 package, and a 180 A continuous current rating at case temperature. The OptiMOS 3 technology reduces gate charge (Qg = 206 nC) and output capacitance (Coss = 3.84 nF) to minimize switching losses at high frequencies, while the D2PAK-7 package with bottom-side cooling tab provides superior heat dissipation compared to standard D2PAK. The device is driven by standard 10 V gate drive, making it compatible with most gate driver ICs. Typical applications include high-current synchronous rectification in telecom and server power supplies, solar micro-inverters, electric vehicle (EV) power conversion stages, battery management systems (BMS), motor drives in industrial automation, and DC-DC converter primary-side switches. The 80 V breakdown voltage provides ample headroom for 24 V and 48 V bus systems. When designing with this MOSFET, ensure that the gate driver can source/sink sufficient peak current (typically 1-2 A) to charge the 206 nC gate charge quickly enough for the target switching frequency. Layout is critical: minimize the high-side/low-side gate-driver loop area to reduce parasitic inductance that can cause voltage overshoot and EMI. Use a sufficient heatsink or copper pour to manage the 300 W dissipation capability. This page synthesizes distributor pricing, same-family drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon
The Infineon IPB020N08N5ATMA1 is an N-channel power MOSFET rated for 80 V VDS and 120 A continuous drain current (Tc), dissipating up to 300 W (Tc), housed in a surface-mount PG-TO263-3 (D2PAK-2) package. Built on Infineon's OptiMOS 5 80 V technology, it delivers a maximum on-state resistance (RDS(on)) of just 2.0 mOhm, representing a 43% RDS(on) reduction compared to the previous generation, which translates directly into lower conduction loss and cooler operation in high-current paths. A power MOSFET is a voltage-controlled switching device that uses an electric field at the gate to modulate current flow between drain and source. N-channel MOSFETs are preferred for low-side and high-side switching in power converters because their majority-carrier (electron) conduction yields lower on-resistance per unit silicon area than equivalent P-channel devices. The IPB020N08N5ATMA1 sits at the top of the 80 V OptiMOS 5 family, which belongs to the broader power management IC and discrete semiconductor hierarchy - specifically the discrete MOSFET subclass targeting telecom, server, and industrial switching applications. Key features include an ultra-low 2.0 mOhm maximum RDS(on) at VGS=10 V, 120 A continuous ID at Tc, 300 W power dissipation at Tc, and an operating junction temperature range of -55C to +175C. The D2PAK-3 surface-mount package offers a low thermal resistance of approximately 0.5 C/W junction-to-case, enabling efficient heat extraction to the PCB copper pad. Avalanche-rated, logic-level capable, and qualified for industrial applications, it supports both hard-switched and soft-switched topologies. Architecturally, the device uses Infineon's advanced OptiMOS 5 trench cell design, which minimizes cell pitch while optimizing the trade-off between on-resistance, gate charge (Qg), and output capacitance (Coss). Low Qg and low Qrr enable high-frequency switching up to several hundred kHz, while the optimized body diode supports synchronous rectification in half-bridge and full-bridge converters without excessive reverse-recovery loss. Typical applications include 48 V telecom and server power supplies, synchronous rectification in LLC and phase-shifted full-bridge converters, motor control drives, solar inverters, and high-current OR-ing / hot-swap circuits. The wide SOA and avalanche rating also suit industrial battery management and e-mobility auxiliary systems. When designing with this MOSFET, ensure the gate driver can source/sink sufficient peak current (typically >2 A) to rapidly charge and discharge the gate capacitance. For high-frequency operation, minimize the gate-loop and power-loop inductances by placing the driver and decoupling capacitor directly adjacent to the gate and source pins. This page synthesizes distributor pricing, drop-in alternatives from the OptiMOS 5 family and competitor offerings, and practical design notes not consolidated on the manufacturer datasheet alone.
IPB020N10N5ATMA1 - 100V 2mΩ N-Channel OptiMOS 5 | Infineon
The Infineon IPB020N10N5ATMA1 is a 100 V N-channel power MOSFET built on Infineon's OptiMOS 5 process technology, offering an ultra-low on-resistance of 2 mΩ (typical) in a D2PAK (PG-TO263-3) surface-mount package. It is rated for 120 A continuous drain current at case temperature and 375 W power dissipation, making it one of the lowest-RDS(on) parts in the 100 V class for this footprint. The device ships on tape and reel (suffix ATMA1) for high-volume automated assembly. What is an N-channel power MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch or amplify electronic signals. The N-channel variant uses electrons as the majority charge carrier, providing lower on-resistance per unit silicon area than P-channel equivalents at the same voltage rating. In the broader taxonomy, this part belongs to: power MOSFET -> discrete semiconductor -> N-channel MOSFET -> 100V class -> OptiMOS 5 family. Modern trench MOSFETs like the OptiMOS 5 series combine low RDS(on), low gate charge (Qg), and low figure-of-merit (FOM = RDS(on) × Qg) for high-efficiency switching. Key features include 2 mΩ maximum on-resistance at VGS = 10 V, low gate charge (Qg) optimized for high-frequency switching, an avalanche-rated body diode, and a wide safe operating area. The OptiMOS 5 technology reduces switching losses versus previous generations by roughly 30 percent, enabling higher frequency operation in switched-mode power supplies without thermal penalties. The IPB020N10N5ATMA1's low figure-of-merit (FOM) makes it particularly suited for high-current synchronous rectification in telecom and server DC-DC converters, where every milliohm of RDS(on) translates directly into conduction losses. The D2PAK package supports top-side cooling through its exposed tab and is compatible with standard D2PAK-3 PCB footprints from other vendors. Typical applications include synchronous rectification in 48 V telecom and server power supplies, motor drive H-bridges and half-bridges in industrial automation, battery management and protection in 12 V/24 V/48 V battery systems, and high-current DC load switching in eMobility and solar charge controllers. The 100 V rating provides ample margin for 48 V nominal buses (60 V worst-case transient per telecom standards). When designing with this part, ensure the gate driver can source and sink sufficient peak current (typically 1-2 A) to charge and discharge the input capacitance quickly. The exposed tab must be soldered to a sufficiently large copper pad for heat dissipation - thermal resistance depends heavily on PCB copper area. This page synthesizes distributor pricing from DigiKey, Mouser, and Octopart, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.