2N7002H6327XTSA2 vs 2N7002-7-F 比較
詳細な並列比較: 2N7002H6327XTSA2 メーカー: Infineon および 2N7002-7-F メーカー: Diodes Incorporated。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Diodes Incorporated
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
2N7002-7-F ✓ 生産中仕様比較
| パラメータ | 2N7002H6327XTSA2 | 2N7002-7-F |
|---|---|---|
| ブランド | Infineon | Diodes Incorporated |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.08 | $0.08 |
| トランジスタタイプ | N-Channel MOSFET | N-Channel Enhancement-Mode MOSFET |
| Technology | OptiMOS (Planar) | Trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 300 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: total gate charge typical] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | [DATA_NEEDED: Ciss typical] |
| 動作温度範囲 | -55C to +150C (Tj) | [DATA_NEEDED: Tj / TA operating range] |
| パッケージ | PG-SOT23 (SOT-23-3) | SOT-23-3 (TO-236) |
| 実装タイプ | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | Enhancement |
| MSLレベル | 1 (per JEDEC J-STD-020) | — |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| Qualification | Industrial / Commercial Grade | — |
| Drain-Source Voltage (VDS max) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 115 mA |
| Continuous Drain Current Range (per Mouser listing) | — | 105 mA to 210 mA |
| Power Dissipation (PD) at Ta | — | 370 mW |
| On-Resistance RDS(on) | — | 7.5 ohm to 13.5 ohm |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Terminal Finish | — | Matte tin (solderable per MIL-STD-202, method 208) |