2N7002H6327XTSA2 vs 2N7002-7-F Vergleich

Detaillierter Direktvergleich von 2N7002H6327XTSA2 von Infineon und 2N7002-7-F von Diodes Incorporated. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2N7002H6327XTSA2 2N7002-7-F
Marke Infineon Diodes Incorporated
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,08 $0,08
Transistortyp N-Channel MOSFET N-Channel Enhancement-Mode MOSFET
Technology OptiMOS (Planar) Trench MOSFET
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 300 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
On-State Resistance (RDS(on)) 3 ohm max @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) [DATA_NEEDED: Qg total] [DATA_NEEDED: total gate charge typical]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] [DATA_NEEDED: Ciss typical]
Betriebstemperaturbereich -55C to +150C (Tj) [DATA_NEEDED: Tj / TA operating range]
Gehäuse PG-SOT23 (SOT-23-3) SOT-23-3 (TO-236)
Montageart Surface Mount Surface Mount
Channel Mode Enhancement Enhancement
MSL-Level 1 (per JEDEC J-STD-020) —
RoHS-Status Compliant Compliant
Lead-Free Yes —
Qualification Industrial / Commercial Grade —
Drain-Source Voltage (VDS max) — 60 V
Continuous Drain Current (ID) at Ta — 115 mA
Continuous Drain Current Range (per Mouser listing) — 105 mA to 210 mA
Power Dissipation (PD) at Ta — 370 mW
On-Resistance RDS(on) — 7.5 ohm to 13.5 ohm
Gate-Source Voltage (VGS) — +/-20 V
Terminal Finish — Matte tin (solderable per MIL-STD-202, method 208)

Datenblätter & Ressourcen

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