2SJ74-GR vs 2SJ74-BL 比較
詳細並排比較 2SJ74-GR 由 Toshiba 與 2SJ74-BL 由 Toshiba. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 2SJ74-GR | 2SJ74-BL |
|---|---|---|
| 品牌 | Toshiba | Toshiba |
| 類別 | Transistors | Transistors |
| 生命週期狀態 | 停產終止 | 啟用中 |
| Polarity | P-Channel | — |
| 電晶體類型 | JFET (Junction Field-Effect Transistor) | P-Channel JFET (depletion mode) |
| Technology | Silicon P Channel Junction Type | — |
| Maximum Power Dissipation (PD) | 400 mW | — |
| 封裝 | 2-5F1D (SC-43), 3 PIN | TO-92 (Toshiba 2-5F1A, SC-43), 3-pin |
| Number of Units in IC | 1 | 1 |
| Grade Suffix | GR (Idss grade classification) | — |
| Recommended Application | First stages of EQ amplifiers and M.C. head amplifiers | — |
| 安裝類型 | Through Hole | Through-Hole |
| Configuration | Single FET | — |
| Gate-Drain Breakdown Voltage (VGDS) | [DATA_NEEDED: gate-drain breakdown voltage] | — |
| Drain-Source Voltage (VDSS) | [DATA_NEEDED: drain-source voltage] | — |
| Zero-Gate Drain Current (IDSS) | [DATA_NEEDED: IDSS range for GR grade] | — |
| Gate-Source Cutoff Voltage (VGS(off)) | [DATA_NEEDED: gate-source cutoff voltage] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | [DATA_NEEDED: Ciss] |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | — |
| Drain-Source Breakdown Voltage (VGDS) | — | -25 V |
| Drain-Source Current (IDSS), BL grade | — | 6 mA to 12 mA |
| Total Power Dissipation (PD) | — | 400 mW |
| Gate-Source Voltage (max) | — | [DATA_NEEDED: Gate-Source Voltage VGSO] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Input Resistance (Rgss) | — | [DATA_NEEDED: Rgss] |
| Transfer Admittance (Yfs) | — | [DATA_NEEDED: Yfs] |
| Noise Figure (NF) | — | [DATA_NEEDED: Noise Figure NF] |
| Channel Type | — | P |
| Applications | — | Low noise audio amplifier, first stages of EQ amplifiers and MC head amplifiers |
| 工作溫度 | — | [DATA_NEEDED: Operating Temperature Range] |