BFU520A vs BFU520WF 比較
詳細な並列比較: BFU520A メーカー: NXP Semiconductors および BFU520WF メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BFU520A | BFU520WF |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | Transistors | Transistors |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.35 | $0.22 |
| トランジスタタイプ | NPN silicon wideband RF transistor | — |
| パッケージ | SOT23 (TO-236-3), 3-pin plastic | SOT323 (SC-70), 3-pin plastic |
| Maximum Operating Frequency | up to 2 GHz | — |
| Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Polarity | NPN | NPN |
| Product Family | BFU5 family | — |
| Application Class | High speed, low noise; small signal to medium power | — |
| 実装タイプ | Surface Mount | Surface Mount |
| コレクタ-エミッタ間電圧（Vceo） | [DATA_NEEDED: VCEO] | — |
| コレクタ電流（Ic） | [DATA_NEEDED: IC max] | — |
| 遷移周波数（ft） | [DATA_NEEDED: fT] | — |
| Noise Figure NF | [DATA_NEEDED: noise figure] | — |
| Gain (S21/Gp) | [DATA_NEEDED: gain] | — |
| 消費電力（Ptot） | [DATA_NEEDED: Ptot] | — |
| 動作温度範囲 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | Compliant |
| Technology | — | Wideband silicon RF BJT, 11 GHz fT silicon technology |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Collector-Emitter Voltage (VCEO rating) | — | 12 V |
| Maximum Collector Current (IC max) | — | 30 mA |
| Total Power Dissipation (Ptot) | — | 450 mW |
| Transit Frequency (fT) | — | 11 GHz |
| Minimum Noise Figure (NFmin) | — | 0.6 dB at 900 MHz |
| Maximum Stable Gain (MSG) | — | 18.5 dB at 900 MHz |
| Application Frequency Range | — | Up to 2 GHz |
| Family | — | BFU5 family, small signal to medium power up to 2 GHz |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |
| Collector-Base Capacitance (Ccb) | — | [DATA_NEEDED: Ccb] |