BFU520A vs BFU520WF Comparison
Detailed side-by-side comparison of BFU520A by NXP Semiconductors and BFU520WF by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BFU520A | BFU520WF |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | Transistors | Transistors |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.35 | $0.22 |
| Transistor Type | NPN silicon wideband RF transistor | β |
| Package | SOT23 (TO-236-3), 3-pin plastic | SOT323 (SC-70), 3-pin plastic |
| Maximum Operating Frequency | up to 2 GHz | β |
| Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Polarity | NPN | NPN |
| Product Family | BFU5 family | β |
| Application Class | High speed, low noise; small signal to medium power | β |
| Mounting Type | Surface Mount | Surface Mount |
| Collector-Emitter Voltage VCEO | [DATA_NEEDED: VCEO] | β |
| Collector Current IC | [DATA_NEEDED: IC max] | β |
| Transition Frequency fT | [DATA_NEEDED: fT] | β |
| Noise Figure NF | [DATA_NEEDED: noise figure] | β |
| Gain (S21/Gp) | [DATA_NEEDED: gain] | β |
| Power Dissipation Ptot | [DATA_NEEDED: Ptot] | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Technology | β | Wideband silicon RF BJT, 11 GHz fT silicon technology |
| Collector-Emitter Breakdown Voltage (VCEO) | β | 12 V |
| Collector-Emitter Voltage (VCEO rating) | β | 12 V |
| Maximum Collector Current (IC max) | β | 30 mA |
| Total Power Dissipation (Ptot) | β | 450 mW |
| Transit Frequency (fT) | β | 11 GHz |
| Minimum Noise Figure (NFmin) | β | 0.6 dB at 900 MHz |
| Maximum Stable Gain (MSG) | β | 18.5 dB at 900 MHz |
| Application Frequency Range | β | Up to 2 GHz |
| Family | β | BFU5 family, small signal to medium power up to 2 GHz |
| DC Current Gain (hFE) | β | [DATA_NEEDED: hFE] |
| Collector-Base Capacitance (Ccb) | β | [DATA_NEEDED: Ccb] |