BFU520A vs BFU520WF 对比
详细并排对比 BFU520A 出自 NXP Semiconductors 和 BFU520WF 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BFU520A | BFU520WF |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | Transistors | Transistors |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.35 | $0.22 |
| 晶体管类型 | NPN silicon wideband RF transistor | — |
| 封装 | SOT23 (TO-236-3), 3-pin plastic | SOT323 (SC-70), 3-pin plastic |
| Maximum Operating Frequency | up to 2 GHz | — |
| Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Polarity | NPN | NPN |
| Product Family | BFU5 family | — |
| Application Class | High speed, low noise; small signal to medium power | — |
| 安装类型 | Surface Mount | Surface Mount |
| 集电极-发射极电压（Vceo） | [DATA_NEEDED: VCEO] | — |
| 集电极电流（Ic） | [DATA_NEEDED: IC max] | — |
| 过渡频率（ft） | [DATA_NEEDED: fT] | — |
| Noise Figure NF | [DATA_NEEDED: noise figure] | — |
| Gain (S21/Gp) | [DATA_NEEDED: gain] | — |
| 功耗（Ptot） | [DATA_NEEDED: Ptot] | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| Technology | — | Wideband silicon RF BJT, 11 GHz fT silicon technology |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Collector-Emitter Voltage (VCEO rating) | — | 12 V |
| Maximum Collector Current (IC max) | — | 30 mA |
| Total Power Dissipation (Ptot) | — | 450 mW |
| Transit Frequency (fT) | — | 11 GHz |
| Minimum Noise Figure (NFmin) | — | 0.6 dB at 900 MHz |
| Maximum Stable Gain (MSG) | — | 18.5 dB at 900 MHz |
| Application Frequency Range | — | Up to 2 GHz |
| Family | — | BFU5 family, small signal to medium power up to 2 GHz |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |
| Collector-Base Capacitance (Ccb) | — | [DATA_NEEDED: Ccb] |