BFU520A vs BFU520WF Сравнение
Подробное сравнение бок о бок BFU520A от NXP Semiconductors и BFU520WF от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BFU520A | BFU520WF |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | Transistors | Transistors |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,35 | $0,22 |
| Тип транзистора | NPN silicon wideband RF transistor | — |
| Корпус | SOT23 (TO-236-3), 3-pin plastic | SOT323 (SC-70), 3-pin plastic |
| Maximum Operating Frequency | up to 2 GHz | — |
| Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Polarity | NPN | NPN |
| Product Family | BFU5 family | — |
| Application Class | High speed, low noise; small signal to medium power | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Напряжение коллектор-эмиттер (Vceo) | [DATA_NEEDED: VCEO] | — |
| Ток коллектора (Ic) | [DATA_NEEDED: IC max] | — |
| Граничная частота (ft) | [DATA_NEEDED: fT] | — |
| Noise Figure NF | [DATA_NEEDED: noise figure] | — |
| Gain (S21/Gp) | [DATA_NEEDED: gain] | — |
| Рассеиваемая мощность (Ptot) | [DATA_NEEDED: Ptot] | — |
| Диапазон рабочих температур | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Статус RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Technology | — | Wideband silicon RF BJT, 11 GHz fT silicon technology |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Collector-Emitter Voltage (VCEO rating) | — | 12 V |
| Maximum Collector Current (IC max) | — | 30 mA |
| Total Power Dissipation (Ptot) | — | 450 mW |
| Transit Frequency (fT) | — | 11 GHz |
| Minimum Noise Figure (NFmin) | — | 0.6 dB at 900 MHz |
| Maximum Stable Gain (MSG) | — | 18.5 dB at 900 MHz |
| Application Frequency Range | — | Up to 2 GHz |
| Family | — | BFU5 family, small signal to medium power up to 2 GHz |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |
| Collector-Base Capacitance (Ccb) | — | [DATA_NEEDED: Ccb] |