BSC026N04LSATMA1 vs BSC019N04LSTATMA1 比較
詳細な並列比較: BSC026N04LSATMA1 メーカー: Infineon および BSC019N04LSTATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC026N04LSATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $1.21 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS™ 5 N-Channel Power MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID, Ta) | 23 A | — |
| Continuous Drain Current (ID, Tc=25°C) | 100 A | — |
| Pulsed Drain Current (IDM, Tc=25°C) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 2.6 mΩ | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: max RDS(on)] | 1.9 mOhm |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 63 W | — |
| 動作温度範囲 | -55°C to +150°C | -55 C to +150 C |
| パッケージ | PG-TDSON-8-6 (TDSON 5x6 mm) | TDSON-8 (SuperSO8) 5x6 mm |
| 実装タイプ | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS™ 5 | OptiMOS 5 (N-channel trench MOSFET) |
| Channel Type | N-Channel | — |
| RoHS ステータス | Compliant | Compliant |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| MSLレベル | — | 1 (unlimited) |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |