BSC026N04LSATMA1 vs BSC019N04LSTATMA1 Comparison
Detailed side-by-side comparison of BSC026N04LSATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC026N04LSATMA1
BSC026N04LSATMA1 - 40V N-Ch OptiMOS 2.6mΞ© MOSFET | Infineon
BSC026N04LSATMA1 β ActiveInfineon
BSC019N04LSTATMA1
BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
BSC019N04LSTATMA1 β ActiveSpecification Comparison
| Parameter | BSC026N04LSATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $1.21 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOSβ’ 5 N-Channel Power MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID, Ta) | 23 A | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 100 A | β |
| Pulsed Drain Current (IDM, Tc=25Β°C) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 2.6 mΞ© | β |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: max RDS(on)] | 1.9 mOhm |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 63 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55 C to +150 C |
| Package | PG-TDSON-8-6 (TDSON 5x6 mm) | TDSON-8 (SuperSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOSβ’ 5 | OptiMOS 5 (N-channel trench MOSFET) |
| Channel Type | N-Channel | β |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID, Tc=25C) | β | 161 A |
| Continuous Drain Current (ID, Ta=25C) | β | 28 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | β | 1.7 V |
| Total Gate Charge Qg typ | β | 85 nC |
| Power Dissipation PD (Tc=25C) | β | 94 W |
| MSL Level | β | 1 (unlimited) |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Avalanche Rated | β | Yes |