BSC118N10NSGATMA1 vs BSC027N10NS5ATMA1 比較
詳細な並列比較: BSC118N10NSGATMA1 メーカー: Infineon および BSC027N10NS5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC118N10NSGATMA1 | BSC027N10NS5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | NRND |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $1.10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 2 | — |
| FET Type | N-Channel | — |
| Mode | Enhancement (Normal Level) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 11 A | — |
| Continuous Drain Current (ID) at Tc=25C | 71 A | — |
| Power Dissipation (PD) at Tc=25C | 114 W | — |
| パッケージ | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作接合温度 | -55 C to +150 C | — |
| Technology | Trench MOSFET | OptiMOS 5 (100V) |
| Lead Plating | Pb-free | — |
| RoHS ステータス | Compliant | Compliant |
| ハロゲンフリー | Yes | — |
| JEDEC Qualification | Qualified per target application | — |
| Target Application | High-frequency SMPS, synchronous rectification | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| Part Number | — | BSC027N10NS5ATMA1 |
| Channel Type | — | N-Channel |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at Ta | — | 23 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | 194 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 2.7 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 214 W |
| 動作温度範囲 | — | [DATA_NEEDED: Tj min/max] |
| MSLレベル | — | [DATA_NEEDED: MSL rating] |
| Qualification | — | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |