BSC118N10NSGATMA1 vs BSC027N10NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC118N10NSGATMA1 by Infineon and BSC027N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC118N10NSGATMA1 BSC027N10NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active NRND
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 2 —
FET Type N-Channel —
Mode Enhancement (Normal Level) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Ta=25C 11 A —
Continuous Drain Current (ID) at Tc=25C 71 A —
Power Dissipation (PD) at Tc=25C 114 W —
Package PG-TDSON-8-1 (TDSON EP, 5x6 mm) PG-TSON-8-3 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55 C to +150 C —
Technology Trench MOSFET OptiMOS 5 (100V)
Lead Plating Pb-free —
RoHS Status Compliant Compliant
Halogen Free Yes —
JEDEC Qualification Qualified per target application —
Target Application High-frequency SMPS, synchronous rectification —
Gate Charge x RDS(on) FOM Excellent (per datasheet) —
Part Number — BSC027N10NS5ATMA1
Channel Type — N-Channel
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Operating Temperature Range — [DATA_NEEDED: Tj min/max]
MSL Level — [DATA_NEEDED: MSL rating]
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

Datasheets & Resources

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