BSD235CH6327XTSA1 vs BSP88H6327XTSA1 比較
詳細な並列比較: BSD235CH6327XTSA1 メーカー: Infineon および BSP88H6327XTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ 生産中
仕様比較
| パラメータ | BSD235CH6327XTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.12 | $0.21 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS™ | — |
| Configuration | N+P complementary dual MOSFET | Single |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 950 mA | — |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Technology | OptiMOS™ low-voltage | SIPMOS (planar enhancement mode) |
| 動作温度範囲 | -55 °C to +150 °C (junction) | — |
| Polarity | N-channel + P-channel | — |
| Channel Mode | Enhancement | — |
| RoHS ステータス | Compliant (lead-free) | — |
| MSLレベル | 1 | [DATA_NEEDED: MSL level] |
| ピン数 | 6 | — |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 240 V |
| Continuous Drain Current (ID) | — | 350 mA at Ta=25 C |
| Power Dissipation (PD) | — | 1.8 W at Ta=25 C |
| パッケージ | — | PG-SOT223-4 (SOT-223-3) |
| On-State Resistance (RDS(on)) | — | 6 ohm typical at VGS=10 V |
| 動作温度 | — | -55 C to +150 C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |