BSD235CH6327XTSA1 vs BSP88H6327XTSA1 Comparison

Detailed side-by-side comparison of BSD235CH6327XTSA1 by Infineon and BSP88H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSD235CH6327XTSA1 BSP88H6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET Single
Drain-to-Source Voltage (VDS) 20 V —
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW —
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Mounting Type Surface Mount Surface Mount
Technology OptiMOS™ low-voltage SIPMOS (planar enhancement mode)
Operating Temperature Range -55 °C to +150 °C (junction) —
Polarity N-channel + P-channel —
Channel Mode Enhancement —
RoHS Status Compliant (lead-free) —
MSL Level 1 [DATA_NEEDED: MSL level]
Pin Count 6 —
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) — 350 mA at Ta=25 C
Power Dissipation (PD) — 1.8 W at Ta=25 C
Package — PG-SOT223-4 (SOT-223-3)
On-State Resistance (RDS(on)) — 6 ohm typical at VGS=10 V
Operating Temperature — -55 C to +150 C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) min/typ/max]
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
RoHS Compliance — Compliant
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Drain Tab Connection — SOT-223 tab is drain

Datasheets & Resources

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