FDP100N10 vs IPP120N08S403AKSA1 比較
詳細な並列比較: FDP100N10 メーカー: onsemi および IPP120N08S403AKSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | FDP100N10 | IPP120N08S403AKSA1 |
|---|---|---|
| ブランド | onsemi | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.32 | $2.15 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 75 A (Tc) | — |
| On-State Resistance (RDS(on) Max) | 10 mOhm | — |
| Power Dissipation (PD) | 208 W (Tc) | — |
| Gate-Source Voltage (VGS Max) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th) Max) | 4.5 V @ 250 uA | — |
| Technology | PowerTrench MOSFET | — |
| パッケージ | TO-220-3 (TO-220AB) | TO-220-3-1 (PG-TO220-3-1) |
| 実装タイプ | Through Hole | Through Hole |
| Configuration | Single MOSFET | — |
| Product Series | PowerTrench | — |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| 実装スタイル | Through Hole / TO-220AB package | — |
| Manufacturer | Fairchild Semiconductor (onsemi) | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | Compliant (Green Product) |
| Gate Charge (Qg) | [DATA_NEEDED: gate charge] | — |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 120 A |
| Pulsed Drain Current (bondwire-limited) | — | 245 A at 25 C |
| Maximum Power Dissipation (Ptot) | — | 278 W (Tc) |
| On-State Resistance (RDS(on)) | — | 2.8 mOhm typical at VGS=10 V, ID=100 A |
| Gate Threshold Voltage (VGS(th)) | — | 4 V max |
| Total Gate Charge (Qg) | — | 167 nC |
| Input Capacitance (Ciss) | — | 11550 pF |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.54 K/W |
| 動作接合温度 | — | -55 C to +175 C |
| MSLレベル | — | MSL1 (peak reflow up to 260 C) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Rating | — | 100% avalanche-tested |
| Channel Type | — | N-Channel enhancement mode |
| Technology Family | — | OptiMOS |