IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS
部品番号: IPP120N08S403AKSA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $4.12 | $4.12 |
| 10 | $3.74 | $37.40 |
| 100 | $3.28 | $328.00 |
| 500 | $2.85 | $1,425.00 |
| 1,000 | $2.49 | $2,490.00 |
| 3,000 | $2.15 | $6,450.00 |
IPP120N08S403AKSA1 概要
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically a MOS structure) to modulate current flow between the drain and source terminals. Within the semiconductor taxonomy, this device sits in the hierarchy: MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET -> discrete semiconductor. The OptiMOS family specifically targets high-efficiency switching applications where low RDS(on) and low gate charge translate directly into reduced conduction and switching losses, enabling higher switching frequencies and smaller passive components in the surrounding power-conversion circuitry.
Key features include 100% avalanche-tested ruggedness, AEC-Q101 automotive qualification, MSL1 moisture sensitivity rated for peak reflow up to 260 C, and Green Product (RoHS-compliant) construction. The device is rated for an operating junction temperature of 175 C, well above the 150 C limit of standard commercial MOSFETs, supporting use in thermally demanding automotive underhood and industrial environments. It also carries a 175 C operating temperature rating and is 100% avalanche-tested.
The IPP120N08S403AKSA1 is built on Infineon's advanced trench MOSFET process, which achieves an extremely low figure of merit (FOM = RDS(on) x Qg) for high-frequency switching efficiency. The integrated body diode supports synchronous rectification and bridge topologies. The TO-220-3-1 package provides a robust mechanical form factor for through-hole assembly and offers low thermal resistance when paired with an external heatsink.
Typical applications include automotive 12 V / 24 V battery switching, electric power steering (EPS), DC-DC converters, motor drives, and high-current load switches. Designers select this part when an ultra-low-RDS(on) trench MOSFET is required for high-current switching at moderate voltages. The combination of AEC-Q101 qualification and 175 C junction rating makes it especially attractive for automotive powertrain and chassis domains where reliability under harsh thermal cycling is mandatory.
When designing with this device, ensure that the gate driver can supply the full 167 nC gate charge quickly to minimize switching transition times and associated switching losses. Use a Kelvin-source connection when available to decouple the gate-drive loop from the high-current source path, reducing parasitic-induced oscillations and improving EMI performance.
This page synthesizes distributor pricing, AEC-Q100-qualified drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a faster path from selection to validated schematic.
ドロップイン代替品: IPP120N08S403AKSA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IPP120N08S403AKSA1 （同一形状・フットプリント） — 相違点: Package, Technology, Mounting Type, Avalanche Rated, Drain-Source Voltage (VDS).
クイック比較ツール — 並列比較する代替部品を選択:
IPP120N08S4-03
✅ ドロップイン✓ 在庫あり
$1.95 / 個
データシートを見る →IRFB3306PBF
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$1.05 / 個
データシートを見る →IPP120N08S403AKSA1 最大定格＆電気的特性
| Drain-to-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tc) | 120 A |
| Pulsed Drain Current (bondwire-limited) | 245 A at 25 C |
| Maximum Power Dissipation (Ptot) | 278 W (Tc) |
| On-State Resistance (RDS(on)) | 2.8 mOhm typical at VGS=10 V, ID=100 A |
| Gate Threshold Voltage (VGS(th)) | 4 V max |
| Total Gate Charge (Qg) | 167 nC |
| Input Capacitance (Ciss) | 11550 pF |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.54 K/W |
| 動作接合温度 | -55 C to +175 C |
| パッケージ | TO-220-3-1 (PG-TO220-3-1) |
| 実装タイプ | Through Hole |
| MSLレベル | MSL1 (peak reflow up to 260 C) |
| Automotive Qualification | AEC-Q101 qualified |
| Avalanche Rating | 100% avalanche-tested |
| RoHS ステータス | Compliant (Green Product) |
| Channel Type | N-Channel enhancement mode |
| Technology Family | OptiMOS |
IPP120N08S403AKSA1 ピン構成
| ピン 1 | Gate (G) — Gate control terminal - drive with 10 V VGS for full RDS(on) rating |
| ピン 2 | Drain (D) — Drain terminal - electrically connected to the metal mounting tab |
| ピン 3 | Source (S) — Source terminal - return path for gate drive and load current |
安全動作領域 (DC, Tc=25 C)
主な用途
IPP120N08S403AKSA1 の用途: 7 件s: Automotive 12V Battery Switch / Load Switch, Electric Power Steering (EPS) Motor Drive, 48V to 12V DC-DC Buck Converter (High-Side Switch), Industrial Motor Drive / H-Bridge, High-Current ORing Diode Replacement (Active ORing), Solar / Battery Disconnect Switch, Welding / Plasma Cutter Power Stage.
Automotive 12V Battery Switch / Load Switch
The IPP120N08S403AKSA1's 80 V VDS rating provides 2.5x headroom over the 12 V automotive battery bus, comfortably absorbing load-dump transients clamped at 35-40 V. The 2.8 mOhm typical RDS(on) keeps conduction losses low - at 60 A continuous load, dissipation is ~10 W which a modest TO-220 heatsink absorbs with the 0.54 K/W RthJC. AEC-Q101 qualification, 175 C Tj max, and 100% avalanche-tested ruggedness meet the harsh underhood reliability requirements.
おすすめ
Electric Power Steering (EPS) Motor Drive
In EPS half-bridge or 3-phase motor drive stages, the IPP120N08S403AKSA1's 167 nC total gate charge and 11550 pF Ciss determine the switching loss budget at the typical 20 kHz PWM frequency. With ID=120 A capability, a single device per switch position can deliver peak phase currents required by EPS systems. AEC-Q101 plus 175 C Tj rating supports the underhood thermal environment where ambient temperatures routinely exceed 125 C near the steering column.
おすすめ
48V to 12V DC-DC Buck Converter (High-Side Switch)
For a 48 V bus bucked to 12 V at 100 W, the IPP120N08S403AKSA1's 80 V VDS rating is unsuitable - choose a 100 V MOSFET instead. However, on the 12 V secondary side as a high-current synchronous rectifier or load-side switch, the 2.8 mOhm RDS(on) and 167 nC Qg enable >95% efficiency at 100-200 kHz switching with minimal heatsinking. The body diode supports synchronous rectification topology natively.
おすすめ
Industrial Motor Drive / H-Bridge
In industrial H-bridge or 3-phase inverter stages at 24-48 V bus with 50-100 A peak phase currents, the IPP120N08S403AKSA1 delivers the required current per switch position. The 100% avalanche rating provides robustness during the dead-time cross-conduction transient where the high-side and low-side devices momentarily see the bus voltage across the inductive load. Pair with isolated gate drivers (UCC21750, ADuM4135) for safe high-side drive.
おすすめ
High-Current ORing Diode Replacement (Active ORing)
In redundant 12 V / 24 V power supply ORing topologies replacing Schottky ORing diodes, the IPP120N08S403AKSA1 reduces forward voltage drop from ~0.5 V (Schottky) to ~3 mV (RDS(on) x I) at 100 A - cutting ORing losses by ~99%. The body diode handles momentary reverse bias during hot-swap events. N+1 redundancy for telecom / server applications benefits from the resulting efficiency and thermal improvement.
おすすめ
Solar / Battery Disconnect Switch
For a 24 V battery bank or low-voltage PV string cutoff, the IPP120N08S403AKSA1's 120 A continuous and 245 A pulsed capability handles the full string short-circuit current with comfortable margin. The 80 V VDS covers 24 V nominal systems plus surge margin. The 100% avalanche rating protects against inductive kick when interrupting a live battery or motor load. The TO-220 package with TO-220 clip-mount heatsink fits standard outdoor combiner box footprints.
おすすめ
Welding / Plasma Cutter Power Stage
In inverter-based welding or plasma cutter power stages, the IPP120N08S403AKSA1 serves as the primary-side switching element in a ZVS or hard-switched topology handling 50-100 A peak currents at the 24-48 V rectified bus. The 2.8 mOhm RDS(on) limits conduction loss during the high-current pulse, and the 245 A pulsed rating provides headroom during arc ignition transients. The 175 C Tj rating supports the enclosed, poorly-cooled industrial enclosure.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IPP120N08S403AKSA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IPI120N08S403AKSA1 | IPP120N08S4-03 | IRFB3306PBF |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | TO-220-3-1 (PG-TO220-3-1) | TO-262-3-1 | TO-220-3-1 | TO-220-3 |
| Drain-to-Source Voltage (VDS) | 80 V | 80 V | 80 V | 60 V |
| Continuous Drain Current (ID, Tc) | 120 A | 120 A | 120 A | 120 A |
| RDS(on) typical at VGS=10V | 2.8 mOhm | 2.8 mOhm | 2.8 mOhm | 4.0 mOhm |
| Total Gate Charge (Qg) | 167 nC | 167 nC | 167 nC | 130 nC |
| Maximum Power Dissipation (Ptot) | 278 W | 278 W | 278 W | 230 W |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes |
主な差別化要因
- Industry-leading 2.8 mOhm RDS(on) at 80 V in TO-220 （vs IRFB3306PBF)
- AEC-Q101 qualified with 175 C Tj max （vs IPI120N08S403AKSA1 (same silicon, different package))
- OptiMOS trench technology for low FOM （vs IPI120N08S403AKSA1)
設計ノート
Estimated: At continuous 120 A with RDS(on) of 2.8 mOhm, conduction loss is ~40 W; add ~5 W switching loss at 20 kHz with 167 nC Qg. With RthJC of 0.54 K/W, the junction-to-case delta is ~22 C. For Tj max of 175 C, the case must stay below 130 C, meaning total heatsink + thermal interface resistance must be under 1 K/W. A TO-220 clip-mount heatsink with 50 cm2 of surface area typically achieves ~1.5 K/W; derate current to ~80 A continuous or specify a larger extruded heatsink.
The TO-220-3-1 package is through-hole with the metal tab acting as the Drain connection. The Drain tab is electrically hot, so a mica or silicone thermal interface pad plus insulating shoulder washer must be used when mounting to a grounded chassis heatsink to prevent short circuits. Keep the gate-drive trace short (under 25 mm) and use a ground plane return for the source Kelvin connection if the source pin is used rather than the tab for gate return.
The high 11550 pF input capacitance combined with gate-loop inductance causes ringing during switching transitions. Add a 10-100 Ohm gate resistor in series with the gate driver output to dampen ringing. Keep the gate-drive loop area minimal (under 1 cm2) and avoid routing the gate trace over or parallel to the drain tab or high-current drain trace. A small ferrite bead on the gate can also reduce high-frequency ringing.
Do not exceed 80 V VDS - sustained overvoltage will avalanche the device (which it is rated to survive per the 100% avalanche test, but repeated avalanche reduces lifetime). Do not exceed 175 C Tj - above this the body diode recovery characteristics degrade and the die may fail catastrophically. Ensure VGS does not exceed +/- 20 V absolute maximum (10-12 V typical for full enhancement) to avoid gate oxide breakdown.
During hard switching of an inductive load, the drain voltage transitions in 10-50 ns producing significant EMI. Place a snubber (RC or RCD) across the drain-source to slow the dV/dt. For 12 V / 24 V systems a simple 10 Ohm + 10 nF RC snubber is often sufficient. Common-mode chokes on the gate-drive path can also reduce conducted EMI. For automotive EMC compliance (CISPR 25 Class 5), add a small ferrite bead on the load-current path.
コンプライアンス情報
Per Infineon datasheet: AEC-Q101 qualified, MSL1 rated for peak reflow up to 260 C, Green Product (RoHS compliant), 175 C operating junction temperature, 100% avalanche-tested.
