FDP100N10 vs IPP120N08S403AKSA1 Comparison

Detailed side-by-side comparison of FDP100N10 by onsemi and IPP120N08S403AKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPP120N08S403AKSA1 IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 ✓ Active

Specification Comparison

Parameter FDP100N10 IPP120N08S403AKSA1
Brand onsemi Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Polarity N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 75 A (Tc) —
On-State Resistance (RDS(on) Max) 10 mOhm —
Power Dissipation (PD) 208 W (Tc) —
Gate-Source Voltage (VGS Max) +/-20 V —
Gate Threshold Voltage (VGS(th) Max) 4.5 V @ 250 uA —
Technology PowerTrench MOSFET —
Package TO-220-3 (TO-220AB) TO-220-3-1 (PG-TO220-3-1)
Mounting Type Through Hole Through Hole
Configuration Single MOSFET —
Product Series PowerTrench —
Avalanche Rated Yes (100% avalanche tested) —
Mounting Style Through Hole / TO-220AB package —
Manufacturer Fairchild Semiconductor (onsemi) —
RoHS Status [DATA_NEEDED: RoHS status] Compliant (Green Product)
Gate Charge (Qg) [DATA_NEEDED: gate charge] —
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc) — 120 A
Pulsed Drain Current (bondwire-limited) — 245 A at 25 C
Maximum Power Dissipation (Ptot) — 278 W (Tc)
On-State Resistance (RDS(on)) — 2.8 mOhm typical at VGS=10 V, ID=100 A
Gate Threshold Voltage (VGS(th)) — 4 V max
Total Gate Charge (Qg) — 167 nC
Input Capacitance (Ciss) — 11550 pF
Thermal Resistance, Junction-to-Case (RthJC) — 0.54 K/W
Operating Junction Temperature — -55 C to +175 C
MSL Level — MSL1 (peak reflow up to 260 C)
Automotive Qualification — AEC-Q101 qualified
Avalanche Rating — 100% avalanche-tested
Channel Type — N-Channel enhancement mode
Technology Family — OptiMOS

Datasheets & Resources

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