IAUC100N04S6N022ATMA1 vs IPC100N04S5L1R5ATMA1 比較
詳細な並列比較: IAUC100N04S6N022ATMA1 メーカー: Infineon および IPC100N04S5L1R5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUC100N04S6N022ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.82 | $1.18 |
| Technology | OptiMOS 6, N-Channel MOSFET | — |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | — |
| パッケージ | PG-TDSON-8 (5x6 mm) leadless | PG-TDSON-8-34 (SS08 leadless) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +175C (junction) | -55C to +175C |
| Polarity | N-Channel enhancement mode | — |
| Automotive Qualification | AEC-Q100 (IAUC family) | — |
| ピン数 | 8 | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | — |
| MSLレベル | 1 (per JEDEC J-STD-020) | MSL1 (260C peak reflow) |
| RoHS ステータス | Compliant | Compliant (Green Product) |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% |