IAUC100N04S6N022ATMA1 vs IPC100N04S5L1R5ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6N022ATMA1 by Infineon and IPC100N04S5L1R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6N022ATMA1
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 β ActiveInfineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6N022ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $1.18 |
| Technology | OptiMOS 6, N-Channel MOSFET | β |
| Drain-Source Voltage (V_DSS) | 40 V | β |
| Continuous Drain Current (I_D, Tc) | 100 A | β |
| Power Dissipation (P_D, Tc) | 75 W | β |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | β |
| Package | PG-TDSON-8 (5x6 mm) leadless | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | -55C to +175C |
| Polarity | N-Channel enhancement mode | β |
| Automotive Qualification | AEC-Q100 (IAUC family) | β |
| Pin Count | 8 | β |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | β |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (260C peak reflow) |
| RoHS Status | Compliant | Compliant (Green Product) |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS-5 40 V |
| Polarity / Channel Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | 20 V |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | β | 115 W |
| On-Resistance RDS(on) at VGS=10 V | β | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | β | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% |