IAUC100N04S6N022ATMA1 vs IPC100N04S5L1R5ATMA1 Comparação

Comparação detalhada lado a lado de IAUC100N04S6N022ATMA1 por Infineon e IPC100N04S5L1R5ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Infineon
IAUC100N04S6N022ATMA1 IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N022ATMA1 ✓ Ativo
Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ Ativo

Comparação de especificações

Parâmetro IAUC100N04S6N022ATMA1 IPC100N04S5L1R5ATMA1
Marca Infineon Infineon
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,82 $1,18
Technology OptiMOS 6, N-Channel MOSFET —
Drain-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D, Tc) 100 A —
Power Dissipation (P_D, Tc) 75 W —
R_DS(on) (typ at V_GS=10V) 2.2 mOhm —
Encapsulamento PG-TDSON-8 (5x6 mm) leadless PG-TDSON-8-34 (SS08 leadless)
Tipo de montagem Surface Mount Surface Mount
Faixa de temperatura de operação -55C to +175C (junction) -55C to +175C
Polarity N-Channel enhancement mode —
Automotive Qualification AEC-Q100 (IAUC family) —
Contagem de pinos 8 —
Gate Threshold V_GS(th) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Q_g [DATA_NEEDED: total gate charge] —
Nível MSL 1 (per JEDEC J-STD-020) MSL1 (260C peak reflow)
Status RoHS Compliant Compliant (Green Product)
Lead-Free Yes —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-5 40 V
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
AEC-Q101 Qualified — Yes
Avalanche Tested — 100%

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