IAUC100N04S6N022ATMA1 vs IPC100N04S5L1R5ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N04S6N022ATMA1 von Infineon und IPC100N04S5L1R5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC100N04S6N022ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $1,18 |
| Technology | OptiMOS 6, N-Channel MOSFET | — |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | — |
| Gehäuse | PG-TDSON-8 (5x6 mm) leadless | PG-TDSON-8-34 (SS08 leadless) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55C to +175C |
| Polarity | N-Channel enhancement mode | — |
| Automotive Qualification | AEC-Q100 (IAUC family) | — |
| Pin-Anzahl | 8 | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | MSL1 (260C peak reflow) |
| RoHS-Status | Compliant | Compliant (Green Product) |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% |