IAUC120N06S5L015ATMA1 vs IAUCN08S7L018ATMA1 比較
詳細な並列比較: IAUC120N06S5L015ATMA1 メーカー: Infineon および IAUCN08S7L018ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ 生産中仕様比較
| パラメータ | IAUC120N06S5L015ATMA1 | IAUCN08S7L018ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.92 | $1.55 |
| Technology | N-Channel MOSFET (OptiMOS 5) | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID, Tc=25C) | 235 A | — |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΩ | — |
| Gate Charge (Qg, typ) | 88 nC | — |
| Power Dissipation (PD, Tc=25C) | 167 W | — |
| 動作温度範囲 | -55C to +175C (Tj) | -55 °C to +175 °C |
| パッケージ | PG-TDSON-8-43 (Surface Mount) | PG-TDSON-8-43 (5x6 mm) |
| 実装タイプ | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | — |
| Typical Application | Automotive DC-DC, battery switches, motor drives | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 |
| Continuous Drain Current (ID) at Tj | — | 210 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: ID at Tc] |
| Maximum RDS(on) at VGS=10 V | — | 1.8 mΩ |
| Power Dissipation (PD) at Tc=25 °C | — | 169 W |
| Qualification | — | Automotive (per Infineon part description) |
| Gate Drive Voltage (typical) | — | 10 V |