IAUC120N06S5L015ATMA1 vs IAUCN08S7L018ATMA1 Comparison

Detailed side-by-side comparison of IAUC120N06S5L015ATMA1 by Infineon and IAUCN08S7L018ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Active
Infineon
IAUCN08S7L018ATMA1 IAUCN08S7L018ATMA1 - 80V 1.8mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L018ATMA1 - 80V 1.8mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L018ATMA1 ✓ Active

Specification Comparison

Parameter IAUC120N06S5L015ATMA1 IAUCN08S7L018ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology N-Channel MOSFET (OptiMOS 5) N-Channel Trench MOSFET
Drain-Source Voltage (VDS) 60 V 80 V
Continuous Drain Current (ID, Tc=25C) 235 A —
On-Resistance RDS(on) max (VGS=10 V) 1.5 mΩ —
Gate Charge (Qg, typ) 88 nC —
Power Dissipation (PD, Tc=25C) 167 W —
Operating Temperature Range -55C to +175C (Tj) -55 °C to +175 °C
Package PG-TDSON-8-43 (Surface Mount) PG-TDSON-8-43 (5x6 mm)
Mounting Type Surface Mount (exposed pad) Surface Mount
Automotive Qualification AEC-Q101 qualified —
Gate-Source Voltage (VGS) max ±20 V —
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Drain-Source On-State Resistance Test Conditions VGS = 10 V, ID = 50 A —
Typical Application Automotive DC-DC, battery switches, motor drives —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7
Continuous Drain Current (ID) at Tj — 210 A
Continuous Drain Current (ID) at Tc — [DATA_NEEDED: ID at Tc]
Maximum RDS(on) at VGS=10 V — 1.8 mΩ
Power Dissipation (PD) at Tc=25 °C — 169 W
Qualification — Automotive (per Infineon part description)
Gate Drive Voltage (typical) — 10 V

Datasheets & Resources

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