IAUCN04S7N024HATMA1 vs IAUCN04S7L042GATMA1 比較

詳細な並列比較: IAUCN04S7N024HATMA1 メーカー: Infineon および IAUCN04S7L042GATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
IAUCN04S7N024HATMA1 IAUCN04S7N024HATMA1 - 40V Dual N-Ch OptiMOS-7 2.46mΩ | Infineon

IAUCN04S7N024HATMA1 - 40V Dual N-Ch OptiMOS-7 2.46mΩ | Infineon

IAUCN04S7N024HATMA1 ✓ 生産中

仕様比較

パラメータ IAUCN04S7N024HATMA1 IAUCN04S7L042GATMA1
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.98 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-7 40 V —
Configuration Dual N-Channel (independent) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tj) 100 A —
On-Resistance R_DS(on) typ 2.46 mΩ at V_GS = 10 V —
On-Resistance R_DS(on) max [DATA_NEEDED: max R_DS(on) at 10 V V_GS] —
Maximum Power Dissipation (Tc) 75 W —
パッケージ PG-TDSON-8-56 (SSO8 HB 5x6 mm) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
実装タイプ Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
動作温度範囲 [DATA_NEEDED: operating temperature range] -55C to +175C (Tj)
Automotive Qualification AEC-Q101 —
Technology OptiMOS-7 trench-gate Trench N-Channel MOSFET
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: typical V_GS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total Qg] [DATA_NEEDED: Qg @ VGS=10V]
RoHS ステータス Compliant Compliant
MSLレベル 1 (per JEDEC J-STD-020) 1
Packing Tape & Reel Tape & Reel (per -ATMA1 suffix)
Product Family — OptiMOS 7 40V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]

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