IAUCN04S7N024HATMA1 vs IAUCN04S7L042GATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7N024HATMA1 por Infineon y IAUCN04S7L042GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7N024HATMA1 - 40V Dual N-Ch OptiMOS-7 2.46mΩ | Infineon
IAUCN04S7N024HATMA1 ✓ ActivoInfineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7N024HATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,98 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-7 40 V | — |
| Configuration | Dual N-Channel (independent) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tj) | 100 A | — |
| On-Resistance R_DS(on) typ | 2.46 mΩ at V_GS = 10 V | — |
| On-Resistance R_DS(on) max | [DATA_NEEDED: max R_DS(on) at 10 V V_GS] | — |
| Maximum Power Dissipation (Tc) | 75 W | — |
| Encapsulado | PG-TDSON-8-56 (SSO8 HB 5x6 mm) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Tipo de montaje | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -55C to +175C (Tj) |
| Automotive Qualification | AEC-Q101 | — |
| Technology | OptiMOS-7 trench-gate | Trench N-Channel MOSFET |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: typical V_GS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | [DATA_NEEDED: Qg @ VGS=10V] |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 |
| Packing | Tape & Reel | Tape & Reel (per -ATMA1 suffix) |
| Product Family | — | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |