IAUCN04S7N024HATMA1 vs IAUCN04S7L042GATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N024HATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N024HATMA1
IAUCN04S7N024HATMA1 - 40V Dual N-Ch OptiMOS-7 2.46mΞ© | Infineon
IAUCN04S7N024HATMA1 β ActiveInfineon
IAUCN04S7L042GATMA1
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N024HATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-7 40 V | β |
| Configuration | Dual N-Channel (independent) | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, Tj) | 100 A | β |
| On-Resistance R_DS(on) typ | 2.46 mΞ© at V_GS = 10 V | β |
| On-Resistance R_DS(on) max | [DATA_NEEDED: max R_DS(on) at 10 V V_GS] | β |
| Maximum Power Dissipation (Tc) | 75 W | β |
| Package | PG-TDSON-8-56 (SSO8 HB 5x6 mm) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55C to +175C (Tj) |
| Automotive Qualification | AEC-Q101 | β |
| Technology | OptiMOS-7 trench-gate | Trench N-Channel MOSFET |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: typical V_GS(th)] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | [DATA_NEEDED: Qg @ VGS=10V] |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Packing | Tape & Reel | Tape & Reel (per -ATMA1 suffix) |
| Product Family | β | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tj) | β | 77 A |
| Maximum Power Dissipation (PD, Tc) | β | 50 W |
| Polarity / Channel Type | β | N-Channel enhancement mode |
| Automotive Qualified | β | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Target Substrate | β | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical/min/max] |