IAUCN04S7N024HATMA1 vs IAUCN04S7L042GATMA1 비교

다음의 상세 나란히 비교: IAUCN04S7N024HATMA1 제조: Infineon 및 IAUCN04S7L042GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IAUCN04S7N024HATMA1 IAUCN04S7L042GATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.98 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-7 40 V —
Configuration Dual N-Channel (independent) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tj) 100 A —
On-Resistance R_DS(on) typ 2.46 mΩ at V_GS = 10 V —
On-Resistance R_DS(on) max [DATA_NEEDED: max R_DS(on) at 10 V V_GS] —
Maximum Power Dissipation (Tc) 75 W —
패키지 PG-TDSON-8-56 (SSO8 HB 5x6 mm) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
실장 유형 Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
동작 온도 범위 [DATA_NEEDED: operating temperature range] -55C to +175C (Tj)
Automotive Qualification AEC-Q101 —
Technology OptiMOS-7 trench-gate Trench N-Channel MOSFET
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: typical V_GS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total Qg] [DATA_NEEDED: Qg @ VGS=10V]
RoHS 상태 Compliant Compliant
MSL 레벨 1 (per JEDEC J-STD-020) 1
Packing Tape & Reel Tape & Reel (per -ATMA1 suffix)
Product Family — OptiMOS 7 40V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]

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