IPB110P06LMATMA1 vs IPB100N04S4H2ATMA1 比較
詳細な並列比較: IPB110P06LMATMA1 メーカー: Infineon および IPB100N04S4H2ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ 生産中仕様比較
| パラメータ | IPB110P06LMATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.31 | $1.42 |
| FET Type | P-Channel | N-Channel, Enhancement Mode |
| Technology | OptiMOS (trench MOSFET) | OptiMOS-T2 (trench gate) |
| Drain-Source Voltage (VDS) | -60 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | -100 A | 100 A |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| 動作温度範囲 | -55 C to +175 C (TJ) | — |
| パッケージ / ケース | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| RoHS ステータス | Compliant | — |
| Lead-Free | Yes | — |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| 動作接合温度 | — | -55C to +175C |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| パッケージ | — | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| MSLレベル | — | MSL1 (up to 260C peak reflow) |
| Avalanche Energy (EAS) | — | 100% avalanche tested |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant (Green Product) |