IRF5210PBF - -100V P-Channel 40A HEXFET MOSFET | Infineon
部品番号: IRF5210PBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.4063 | $1.41 |
| 10 | $1.0156 | $10.16 |
| 100 | $0.8984 | $89.84 |
| 500 | $0.8594 | $429.70 |
| 1,000 | $0.8203 | $820.30 |
IRF5210PBF 概要
A P-Channel MOSFET is a type of field-effect transistor where the channel conductivity is induced by a negative gate-to-source voltage. P-Channel devices are used as high-side switches because their source is connected near the load supply rail and turning the device on only requires pulling the gate below the source by Vgs(th), which simplifies gate drive in many 24V and 48V systems. The IRF5210PBF fits into the broader taxonomy of MOSFET -> power MOSFET -> discrete semiconductor, making it a fundamental building block of power electronics.
Key features include a drain-to-source voltage rating of -100V, continuous drain current of -40A at Tc, avalanche-rated ruggedness for unclamped inductive switching, and a low typical on-resistance of 60 milliohms. The TO-220AB package provides a thermal resistance of around 0.75 C/W junction-to-case, enabling reliable operation at high power levels. The PBF suffix confirms lead-free, RoHS-compliant construction suitable for global commercial and industrial designs.
Technically, the device uses Infineon's fifth-generation HEXFET process technology with a vertical DMOS structure, optimized for low conduction loss and fast switching. The typical total gate charge of 120 nC allows moderate-frequency PWM operation. The intrinsic body diode supports synchronous-rectifier-style applications and free-wheeling current paths.
Typical applications include high-side load switches, DC motor control, solenoid drivers, power OR-ing, hot-swap controllers, and uninterruptible power supplies. It is widely deployed in industrial 24V/48V bus systems where P-Channel high-side switching simplifies gate drive architecture.
When designing with this part, ensure the gate drive pulls at least 10V below the source for full enhancement, and verify SOA at peak load conditions. The TO-220AB tab is electrically tied to the drain; insulator kits are required when mounting to a grounded heatsink.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical high-side-switching design notes not found in the manufacturer datasheet.
ドロップイン代替品: IRF5210PBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRF5210PBF （同一形状・フットプリント） — 相違点: Technology, Operating Temperature Range, Package, Mounting Type, Lead-Free / RoHS.
クイック比較ツール — 並列比較する代替部品を選択:
IRF4905PBF
✓ 在庫あり
$0.95 / 個
データシートを見る →IRF5210STRLPBF
📋 参考代替品（カタログ未掲載）
IRF5210SPBF
📋 参考代替品（カタログ未掲載）
VBM2104N
📋 参考代替品（カタログ未掲載）
IRF5210PBF 最大定格＆電気的特性
| トランジスタタイプ | P-Channel MOSFET |
| Drain-Source Voltage (Vds) | -100 V |
| Continuous Drain Current (Id) at Tc | -40 A |
| Gate-Source Threshold Voltage (Vgs(th)) | -2 V to -4 V (typical -2 V) |
| On-Resistance Rds(on) at Vgs=-10V | 60 milliohms |
| Total Gate Charge (Qg) | 120 nC |
| Power Dissipation (Pd) at Tc | 200 W |
| 動作温度範囲 | -55 C to +175 C (junction) |
| パッケージ | TO-220AB (through-hole) |
| 実装タイプ | Through Hole |
| Technology | HEXFET (Fifth Generation) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) |
| Tab Connection | Electrically tied to Drain |
| Pin Configuration | Gate / Drain (tab) / Source (G-D-S, front view) |
IRF5210PBF ピン構成
| ピン 1 | Gate — Gate control input; pull 10V below source for full enhancement |
| ピン 2 | Drain — Drain terminal; also electrically bonded to the metal tab |
| ピン 3 | Source — Source terminal; reference node for gate drive |
安全動作領域 (DC, TC = 25 C)
主な用途
IRF5210PBF の用途: 6 件s: 24V Industrial High-Side Load Switch, DC Motor Driver (H-Bridge High-Side), Power OR-ing for Redundant Supplies, Solenoid and Valve Driver, Hot-Swap / Inrush Current Limiter, Uninterruptible Power Supply (UPS) Battery Switch.
24V Industrial High-Side Load Switch
The IRF5210PBF is ideal for high-side switching on 24V industrial buses. With a -100V Vds rating providing 4x voltage margin over a 24V rail, -40A continuous drain current, and 60 milliohm typical Rds(on) at Vgs = -10V, it dissipates only ~96 mW of conduction loss at 40A load. The P-Channel architecture simplifies gate drive: pulling the gate to 0V relative to the 24V source fully enhances the device, eliminating the bootstrap or charge-pump circuitry required by equivalent N-Channel high-side switches. Designers place it between the 24V rail and the load with a 10k pull-up on the gate and a logic-level NMOS pulling the gate low for ON control.
おすすめ
DC Motor Driver (H-Bridge High-Side)
The IRF5210PBF serves as the high-side switch in discrete H-bridge motor driver circuits. Its -40A continuous drain current covers most sub-1HP brushed DC motors, while the 200W power dissipation rating and TO-220AB thermal performance (around 0.75 C/W junction-to-case) allow sustained motor currents without external heatsinking up to 30A. The P-Channel configuration eliminates the need for high-side gate drivers, reducing BOM cost. Pair it with N-Channel low-side switches (e.g., IRFZ44NSTRLPBF) and a small gate resistor network for slew-rate control to suppress EMI in PWM motor control loops.
おすすめ
Power OR-ing for Redundant Supplies
In redundant 24V or 48V power systems, the IRF5210PBF is used as an OR-ing MOSFET to block reverse current flow between paralleled supplies. Its -100V Vds withstands transients on industrial DC buses, while the low 60 milliohm Rds(on) minimizes voltage drop between the supply and the load, preserving efficiency. The intrinsic body diode provides initial turn-on conduction, after which the gate is pulled low to fully enhance the channel and minimize dissipation. The 175 C junction temperature rating supports operation in tightly enclosed telecom and server power shelves.
おすすめ
Solenoid and Valve Driver
Industrial solenoid drivers benefit from the IRF5210PBF's P-Channel high-side architecture and 40A pulse capability. Driving a 24V solenoid from a low-voltage microcontroller is straightforward: a logic-level NPN transistor pulls the gate of the IRF5210PBF low to energize the coil. The MOSFET's avalanche rating absorbs the inductive kick when the solenoid is de-energized, eliminating the need for external freewheeling diodes in many circuits. The 60 milliohm Rds(on) keeps switch dissipation low during the steady-state hold, enabling thermally compact DIN-rail mounted designs.
おすすめ
Hot-Swap / Inrush Current Limiter
The IRF5210PBF is well-suited to hot-swap controller circuits that need to gracefully apply power to a board while limiting inrush into bulk capacitors. With -40A current handling and P-Channel high-side placement, it can carry the full load of a typical -48V telecom board while the gate is ramped slowly to control di/dt. The 120 nC total gate charge enables simple single-stage RC ramp networks. Its 100V Vds rating easily tolerates -48V systems plus transient spikes, and the 200W TO-220 dissipation allows sustained fault current limiting without immediate thermal shutdown.
おすすめ
Uninterruptible Power Supply (UPS) Battery Switch
In UPS battery backup designs, the IRF5210PBF serves as the disconnect MOSFET between the battery stack and the inverter. Its -100V Vds covers 24V and 48V battery configurations with substantial margin, while the 40A continuous rating supports inverter power levels up to ~2 kW. The P-Channel configuration allows the battery negative to remain common-grounded, simplifying the inverter gate drive. Its HEXFET avalanche rating is critical during abrupt load steps where the battery inductance can produce transient over-voltage events.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRF5210PBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRF5210STRLPBF | IRF5210PBF | VBM2104N | IRF4905PBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi | Infineon Technologies |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Drain-Source Voltage (Vds) | -100 V | -100 V | -100 V | -55 V (within ~45% drop, drop-in only on package) | |
| Continuous Drain Current (Id) | -40 A | -40 A | -40 A | -74 A (higher current rating) | |
| Rds(on) at Vgs=-10V | 60 milliohms | 60 milliohms | 60 milliohms | 20 milliohms (lower conduction loss) | |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel |
主な差別化要因
- P-Channel high-side simplicity （vs IRFZ44NSTRLPBF (N-Channel low-side))
- Mature Infineon HEXFET silicon （vs VBM2104N (Chinese-brand VBsemi))
- Wide 4x voltage margin （vs IRF4905PBF (-55V Vds))
設計ノート
Estimated: At -40A continuous and Rds(on) of 60 milliohms (Vgs=-10V), conduction loss is approximately 96 W. The TO-220AB junction-to-case thermal resistance is around 0.75 C/W, so a heatsink rated at <= 0.5 C/W keeps junction temperature below 125 C in 25 C ambient. Without a heatsink, the part will thermal-limit quickly at full load.
The TO-220AB metal tab is electrically bonded to the Drain. When mounting to a grounded heatsink or chassis, use a silicone insulator pad (Bergquist Sil-Pad or similar) and an insulating shoulder washer on the mounting screw to prevent a short to the heatsink. The Drain tab is also the primary thermal path; do not rely on the TO-220AB leads for heat removal.
Always drive the gate to at least -10V relative to source to guarantee full enhancement and minimum Rds(on). Driving only to Vgs(th) (~-2V to -4V) leaves the MOSFET in its linear region, causing severe dissipation. Add a 10k pull-up resistor from gate to source to keep the device OFF by default and prevent false turn-on from dv/dt-induced gate coupling.
Keep the gate drive loop physically small: place the gate pull-down resistor (or driver transistor) within 1-2 cm of the gate pin to minimize parasitic inductance. Long gate traces can ring during switching and exceed the Vgs absolute maximum of +/-20V, destroying the gate oxide. A 10-100 ohm gate resistor in series damps this ringing.
コンプライアンス情報
PBF suffix denotes lead-free / RoHS-compliant construction. Originally International Rectifier (acquired by Infineon 2015); current production under Infineon Technologies brand.
