IPC50N04S5L5R5ATMA1 vs IPB014N06NATMA1 比較
詳細な並列比較: IPC50N04S5L5R5ATMA1 メーカー: Infineon および IPB014N06NATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ 生産中
仕様比較
| パラメータ | IPC50N04S5L5R5ATMA1 | IPB014N06NATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.36 | $2.10 |
| トランジスタタイプ | N-Channel MOSFET | — |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| 動作温度範囲 | -55 °C to +175 °C | — |
| パッケージ | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TO263-7 (D2PAK-7) |
| 実装タイプ | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | 100% avalanche tested |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Transistor Polarity | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 34 A |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 214 W |
| On-Resistance RDS(on) max | — | 1.4 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| 動作接合温度 | — | -55 °C to +175 °C |
| Technology | — | OptiMOS 5 (trench-gate) |
| Qualification | — | JEDEC qualified for target applications |
| Primary Application | — | Synchronous rectification, motor control |