IPC50N04S5L5R5ATMA1 vs IPB014N06NATMA1 Comparison

Detailed side-by-side comparison of IPC50N04S5L5R5ATMA1 by Infineon and IPB014N06NATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPC50N04S5L5R5ATMA1 IPB014N06NATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Mode Enhancement Mode —
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID, Tc) 50 A —
Maximum Drain Current (silicon-limited, 25 °C) 60 A —
On-Resistance RDS(on) max @ VGS=10 V 5.5 mΩ —
Gate Threshold VGS(th) Logic Level (enhancement at ≤ 4.5 V VGS) —
Power Dissipation (Tc) 42 W —
Thermal Resistance Junction-to-Case RthJC 3.6 K/W —
Operating Temperature Range -55 °C to +175 °C —
Package PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) PG-TO263-7 (D2PAK-7)
Mounting Type Surface Mount Surface Mount
AEC-Q101 Qualification Qualified (automotive grade) —
MSL (Moisture Sensitivity Level) MSL1 —
Peak Reflow Temperature 260 °C —
Avalanche Rating 100 % Avalanche Tested 100% avalanche tested
RoHS / REACH RoHS Compliant (Green Product) —
Transistor Polarity — N-Channel
Continuous Drain Current (ID) at Ta — 34 A
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 214 W
On-Resistance RDS(on) max — 1.4 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Operating Junction Temperature — -55 °C to +175 °C
Technology — OptiMOS 5 (trench-gate)
Qualification — JEDEC qualified for target applications
Primary Application — Synchronous rectification, motor control

Datasheets & Resources

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