IPD042P03L3GATMA1 vs IRFR1018ETRPBF 比較
詳細な並列比較: IPD042P03L3GATMA1 メーカー: Infineon および IRFR1018ETRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD042P03L3GATMA1 | IRFR1018ETRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.28 | $0.36 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID, Tc=25°C) | -70 A | — |
| Pulsed Drain Current (IDM) | -280 A | — |
| RDS(on) max @ VGS = -10 V | 4.2 mΩ | — |
| RDS(on) max @ VGS = -4.5 V | [DATA_NEEDED: RDS(on) @ -4.5 V] | — |
| Gate Threshold Voltage (VGS(th)) | -1.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation (PD @ Tc=25°C) | 150 W | — |
| Single-Pulse Avalanche Energy (EAS) | 290 mJ | — |
| 動作温度範囲 | -55°C to +175°C (TJ) | -55 °C to +175 °C |
| パッケージ | PG-TO252-3 (DPAK) | TO-252AA (D-Pak) |
| Technology | OptiMOS™ P (Trench) | HEXFET |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 | 1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) | — | 79 A (Tc) |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Rds(on) Max @ Vgs=10V | — | 8.4 mΩ |
| Rds(on) Max @ Vgs=4.5V | — | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 46 nC |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Maximum Power Dissipation (Pd) | — | 110 W (Tc) |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |