IPD30N08S2L21ATMA1 vs IPB180P04P4L02ATMA2 比較
詳細な並列比較: IPD30N08S2L21ATMA1 メーカー: Infineon および IPB180P04P4L02ATMA2 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 ✓ 生産中仕様比較
| パラメータ | IPD30N08S2L21ATMA1 | IPB180P04P4L02ATMA2 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.48 | $1.85 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS-P2 |
| トランジスタタイプ | N-Channel MOSFET | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | 75 V | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) at VGS=10 V | 26 milliohm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (L series) | — |
| Gate Charge (Qg) typ | 56 nC | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| 動作温度範囲 | -55C to +175C | -55 C to +175 C (junction) |
| Maximum Junction Temperature | +175C | — |
| パッケージ | PG-TO252-3-11 (DPAK-2) | PG-TO263-7-3 (D2PAK-6, 7-pin) |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 3 (Drain tab + Gate + Source) | 7 (6 + tab) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS ステータス | Compliant | Compliant (per Infineon product page) |
| MSLレベル | 1 | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Power Dissipation (PD) at Tc | — | 150 W |
| On-State Resistance RDS(on) max | — | 2.4 mOhm at VGS = -10 V (per Infineon product page) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Tab Connection | — | Drain |