IPD30N08S2L21ATMA1 vs IPB180P04P4L02ATMA2 Comparison

Detailed side-by-side comparison of IPD30N08S2L21ATMA1 by Infineon and IPB180P04P4L02ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD30N08S2L21ATMA1 IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon

IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon

IPD30N08S2L21ATMA1 βœ“ Active

Specification Comparison

Parameter IPD30N08S2L21ATMA1 IPB180P04P4L02ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $1.85
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS OptiMOS-P2
Transistor Type N-Channel MOSFET P-Channel MOSFET
Drain-Source Voltage (VDS) 75 V 40 V
Continuous Drain Current (ID) at Tc=25C 30 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-State Resistance (RDS(on)) at VGS=10 V 26 milliohm (typ) β€”
Gate Threshold Voltage (VGS(th)) Logic-level (L series) β€”
Gate Charge (Qg) typ 56 nC β€”
Power Dissipation (PD) at Tc=25C 136 W β€”
Operating Temperature Range -55C to +175C -55 C to +175 C (junction)
Maximum Junction Temperature +175C β€”
Package PG-TO252-3-11 (DPAK-2) PG-TO263-7-3 (D2PAK-6, 7-pin)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Drain tab + Gate + Source) 7 (6 + tab)
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Status Compliant Compliant (per Infineon product page)
MSL Level 1 [DATA_NEEDED: MSL rating]
Continuous Drain Current (ID) at Tc β€” 180 A
Power Dissipation (PD) at Tc β€” 150 W
On-State Resistance RDS(on) max β€” 2.4 mOhm at VGS = -10 V (per Infineon product page)
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) typ/min/max]
Tab Connection β€” Drain

Datasheets & Resources

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