IPD30N08S2L21ATMA1 vs IPB180P04P4L02ATMA2 对比
详细并排对比 IPD30N08S2L21ATMA1 出自 Infineon 和 IPB180P04P4L02ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 ✓ 量产中规格对比
| 参数 | IPD30N08S2L21ATMA1 | IPB180P04P4L02ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.48 | $1.85 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS-P2 |
| 晶体管类型 | N-Channel MOSFET | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | 75 V | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) at VGS=10 V | 26 milliohm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (L series) | — |
| Gate Charge (Qg) typ | 56 nC | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| 工作温度范围 | -55C to +175C | -55 C to +175 C (junction) |
| Maximum Junction Temperature | +175C | — |
| 封装 | PG-TO252-3-11 (DPAK-2) | PG-TO263-7-3 (D2PAK-6, 7-pin) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (Drain tab + Gate + Source) | 7 (6 + tab) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS 状态 | Compliant | Compliant (per Infineon product page) |
| MSL 等级 | 1 | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Power Dissipation (PD) at Tc | — | 150 W |
| On-State Resistance RDS(on) max | — | 2.4 mOhm at VGS = -10 V (per Infineon product page) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Tab Connection | — | Drain |