IPD90N04S403ATMA1 vs IPD78CN10NGATMA1 比較
詳細な並列比較: IPD90N04S403ATMA1 メーカー: Infineon および IPD78CN10NGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD90N04S403ATMA1 | IPD78CN10NGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.05 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 90 A | — |
| On-State Resistance (R_DS(on)) | 3.2 mOhm typical at V_GS = 10 V | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 94 W | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| パッケージ | PG-TO252-3-313 (DPAK) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作接合温度 | -55C to +175C | — |
| MSLレベル | MSL1 (peak reflow up to 260C) | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | — |
| RoHS Compliance | Compliant (Green Package) | Compliant |
| Technology | Trench MOSFET (OptiMOS-T2) | OptiMOS 2 Power-Transistor |
| Series | — | OptiMOS 2 |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Tc=25C | — | 13 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 78 mOhm |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) Max at Tc=25C | — | 31 W |
| Operating Junction Temperature Max | — | 175 C |
| パッケージ / ケース | — | PG-TO252-3 (DPAK) |
| ピン数 | — | 3 (Gate, Drain, Source) + Tab |
| Lead Plating | — | Pb-free (Matte Tin) |
| JEDEC Qualification | — | Qualified per JEDEC1 for target application |