IQDH35N03LM5SCATMA1 vs IPC50N04S5L5R5ATMA1 比較
詳細な並列比較: IQDH35N03LM5SCATMA1 メーカー: Infineon および IPC50N04S5L5R5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ 生産中仕様比較
| パラメータ | IQDH35N03LM5SCATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.05 | $0.36 |
| Manufacturer | Infineon Technologies | — |
| トランジスタタイプ | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 5 (trench, shielded-gate) | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| パッケージ | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55 C to +175 C | -55 °C to +175 °C |
| MSLレベル | 1 (unlimited) | — |
| RoHS ステータス | Compliant | — |
| Marking | IQDH35N03LM5S | — |
| Mode | — | Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 5.5 mΩ |
| Gate Threshold VGS(th) | — | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Power Dissipation (Tc) | — | 42 W |
| Thermal Resistance Junction-to-Case RthJC | — | 3.6 K/W |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | — | MSL1 |
| Peak Reflow Temperature | — | 260 °C |
| Avalanche Rating | — | 100 % Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |