IQDH35N03LM5SCATMA1 vs IPC50N04S5L5R5ATMA1 비교
다음의 상세 나란히 비교: IQDH35N03LM5SCATMA1 제조: Infineon 및 IPC50N04S5L5R5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ 활성사양 비교
| 파라미터 | IQDH35N03LM5SCATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.05 | $0.36 |
| Manufacturer | Infineon Technologies | — |
| 트랜지스터 유형 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 5 (trench, shielded-gate) | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| 패키지 | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55 C to +175 C | -55 °C to +175 °C |
| MSL 레벨 | 1 (unlimited) | — |
| RoHS 상태 | Compliant | — |
| Marking | IQDH35N03LM5S | — |
| Mode | — | Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 5.5 mΩ |
| Gate Threshold VGS(th) | — | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Power Dissipation (Tc) | — | 42 W |
| Thermal Resistance Junction-to-Case RthJC | — | 3.6 K/W |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | — | MSL1 |
| Peak Reflow Temperature | — | 260 °C |
| Avalanche Rating | — | 100 % Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |