IQE008N03LM5SCATMA1 vs IQE013N04LM6ATMA1 比較
詳細な並列比較: IQE008N03LM5SCATMA1 メーカー: Infineon および IQE013N04LM6ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ 生産中仕様比較
| パラメータ | IQE008N03LM5SCATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.18 | $0.71 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Technology | Trench MOSFET (N-Channel) | OptiMOS N-channel trench MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) | 252 A | — |
| On-Resistance (RDS(on)) max | 0.85 mΩ at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | 2 V (typ) |
| Gate Drive Voltage | 10 V (recommended) | — |
| パッケージ | PG-WHSON-8 (Source-Down) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Configuration | Single N-Channel | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Cooling Architecture | Source-Down, dual-side cooling | — |
| 動作温度範囲 | -55 °C to +150 °C | -55 °C to +175 °C |
| MSLレベル | [DATA_NEEDED: MSL rating] | — |
| RoHS ステータス | Compliant | Compliant |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (Ta) | — | 31 A |
| Continuous Drain Current (Tc) | — | 205 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| On-Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | — | 1.35 mΩ @ VGS=10 V, ID=20 A |
| Source-Down Topology | — | Yes (flip-chip die attach, drain on top thermal pad) |